VBGA SRAM 11

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Memory Density	Minimum Supply Voltage (Vsup)	Output Enable	Maximum Standby Current	Length
S70KS1281DPBHI023	Infineon Technologies	PSEUDO STATIC RAM	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	72 mA	16777216 words	COMMON	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1 mm	85 Cel		16MX8	16M	1.7 V	-40 Cel	BOTTOM	1	R-PBGA-B24	3	1.95 V	1 mm	166 MHz	6 mm	134217728 bit	1.7 V		.0004 Amp	8 mm
S80KS5122GABHI020	Infineon Technologies	HYPERRAM		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	44 mA	67108964 words	COMMON	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1 mm	85 Cel	3-STATE	64MX8	64M	1.7 V	-40 Cel	BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm	536870912 bit	1.7 V	NO	.004 Amp	8 mm
S80KS5122GABHM020	Infineon Technologies	HYPERRAM		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	44 mA	67108964 words	COMMON	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1 mm	125 Cel	3-STATE	64MX8	64M	1.7 V	-40 Cel	BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm	536870912 bit	1.7 V	NO	.004 Amp	8 mm
S80KS5122GABHM023	Infineon Technologies	HYPERRAM		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	44 mA	67108964 words	COMMON	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1 mm	125 Cel	3-STATE	64MX8	64M	1.7 V	-40 Cel	BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm	536870912 bit	1.7 V	NO	.004 Amp	8 mm
S80KS5122GABHV023	Infineon Technologies	HYPERRAM		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	44 mA	67108964 words	COMMON	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1 mm	105 Cel	3-STATE	64MX8	64M	1.7 V	-40 Cel	BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm	536870912 bit	1.7 V	NO	.004 Amp	8 mm
S80KS5122GABHV020	Infineon Technologies	HYPERRAM		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	44 mA	67108964 words	COMMON	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1 mm	105 Cel	3-STATE	64MX8	64M	1.7 V	-40 Cel	BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm	536870912 bit	1.7 V	NO	.004 Amp	8 mm
S80KS5122GABHA020	Infineon Technologies	HYPERRAM		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	44 mA	67108964 words	COMMON	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1 mm	85 Cel	3-STATE	64MX8	64M	1.7 V	-40 Cel	BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm	536870912 bit	1.7 V	NO	.004 Amp	8 mm
S80KS5122GABHB020	Infineon Technologies	HYPERRAM		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	44 mA	67108964 words	COMMON	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1 mm	105 Cel	3-STATE	64MX8	64M	1.7 V	-40 Cel	BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm	536870912 bit	1.7 V	NO	.004 Amp	8 mm
S80KS5122GABHB023	Infineon Technologies	HYPERRAM		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	44 mA	67108964 words	COMMON	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1 mm	105 Cel	3-STATE	64MX8	64M	1.7 V	-40 Cel	BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm	536870912 bit	1.7 V	NO	.004 Amp	8 mm
S80KS5122GABHA023	Infineon Technologies	HYPERRAM		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	44 mA	67108964 words	COMMON	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1 mm	85 Cel	3-STATE	64MX8	64M	1.7 V	-40 Cel	BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm	536870912 bit	1.7 V	NO	.004 Amp	8 mm
S80KS5122GABHI023	Infineon Technologies	HYPERRAM		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	44 mA	67108964 words	COMMON	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1 mm	85 Cel	3-STATE	64MX8	64M	1.7 V	-40 Cel	BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm	536870912 bit	1.7 V	NO	.004 Amp	8 mm

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.