VFBGA SRAM 1,783

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MT45W1MW16PAFA-60WT	Micron Technology	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		1MX16	1M		-25 Cel	TIN LEAD SILVER	BOTTOM	R-PBGA-B48	1.95 V	1 mm	6 mm	Not Qualified	16777216 bit	1.7 V		e0				8 mm	60 ns
MT45W2MW16BBB-708LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e1		260	.00009 Amp	8 mm	70 ns
MT45W2ML16BBB-608WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M		-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e1				8 mm	60 ns
MT45W4MW16BFB-706LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	4194304 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e0			.0001 Amp	8 mm	70 ns
MT45W4MW16BFB-708LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-30 Cel	TIN LEAD	BOTTOM	R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e0			.0001 Amp	8 mm	70 ns
MT45W2MW16BBB-601LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e1		260	.00009 Amp	8 mm	60 ns
MT45W2MW16BFB-851WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-30 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0			.00011 Amp	8 mm	85 ns
MT45W256KW16BEGB-701WT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	262144 words	COMMON		1.8,1.8/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	256KX16	256K		-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	4194304 bit	1.7 V		e1			.00001 Amp	8 mm	70 ns
MT45W2MV16BBB-706LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	1.8	1.8,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e1		260	.00009 Amp	8 mm	70 ns
MT45W2MV16BBB-858LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e1		260	.00009 Amp	8 mm	85 ns
MT45W4MW16PKGA-70WT	Micron Technology	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		4194304 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		4MX16	4M		-30 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B48	1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V		e1				8 mm	70 ns
MT45W1MV16PABA-70IT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		1MX16	1M		-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B48	1.95 V	1 mm	6 mm	Not Qualified	16777216 bit	1.7 V		e1				8 mm	70 ns
MT45W4MW16BBB-858LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e1		260	.0001 Amp	8 mm	85 ns
MT45W2ML16BAFB-601LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M		-25 Cel	TIN LEAD SILVER	BOTTOM	R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0				8 mm	60 ns
MT45W4MV16PBA-85WT	Micron Technology	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	4194304 words	COMMON	1.8	1.8,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-25 Cel	Tin/Silver/Copper (Sn98.5Ag1.0Cu0.5)	BOTTOM	R-PBGA-B48	1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V		e8	30	260	.00012 Amp	8 mm	85 ns
MT45W2ML16BBB-856LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	1.8	1.8,3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e1		260	.00009 Amp	8 mm	85 ns
MT45W2MW16PBA-70LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel	Tin/Silver/Copper (Sn98.5Ag1.0Cu0.5)	BOTTOM	R-PBGA-B48	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e8	30	260	.00009 Amp	8 mm	70 ns
MT45W2MV16BFB-856IT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	1.8	1.8,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel	TIN LEAD SILVER	BOTTOM	R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e0			.00011 Amp	8 mm	85 ns
MT45W4ML16BFB-856WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	4194304 words	COMMON	1.8	1.8,3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-25 Cel	TIN LEAD SILVER	BOTTOM	R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e0			.00012 Amp	8 mm	85 ns
MT45W4ML16BBB-708LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8,3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V		e1		260	.0001 Amp	8 mm	70 ns
MT45W4ML16PFA-60LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		4194304 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		4MX16	4M		-40 Cel	TIN LEAD SILVER	BOTTOM	R-PBGA-B48	1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V		e0				8 mm	60 ns
MT45W2MW16BFB-858LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0			.00009 Amp	8 mm	85 ns
MT45W2MW16BFB-858LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-30 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0			.00009 Amp	8 mm	85 ns
MT45W4MW16BFB-858IT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e0			.00012 Amp	8 mm	85 ns
MT45W1MV16PABA-60LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		1MX16	1M		-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B48	1.95 V	1 mm	6 mm	Not Qualified	16777216 bit	1.7 V		e1				8 mm	60 ns
MT45W4MW16PCGA-70LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	4194304 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B48	1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V		e1			.00012 Amp	8 mm	70 ns
MT45W4MW16BBB-701WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-30 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e1		260	.00012 Amp	8 mm	70 ns
MT45W2ML16BBB-606LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M		-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e1				8 mm	60 ns
MT45W4ML16BFB-701WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8,3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-25 Cel	TIN LEAD SILVER	BOTTOM	R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e0			.00012 Amp	8 mm	70 ns
MT45W2ML16BAFB-701IT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M		-40 Cel	TIN LEAD SILVER	BOTTOM	R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0				8 mm	70 ns
MT45W2ML16BFB-606LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M		-25 Cel	TIN LEAD SILVER	BOTTOM	R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0				8 mm	60 ns
MT45W2MW16BAFB-708LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-30 Cel	TIN LEAD	BOTTOM	R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0			.00009 Amp	8 mm	70 ns
MT45W2MV16PABA-60WT	Micron Technology	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M		-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B48	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e1				8 mm	60 ns
MT45W2MW16PBA-85WT	Micron Technology	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-30 Cel	Tin/Silver/Copper (Sn98.5Ag1.0Cu0.5)	BOTTOM	R-PBGA-B48	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e8	30	260	.00011 Amp	8 mm	85 ns
MT45W2MW16BBB-858WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-30 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e1		260	.00011 Amp	8 mm	85 ns
MT45W2MW16BAFB-856IT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	30 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0			.00011 Amp	8 mm	85 ns
MT45W2MW16BFB-856LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e0			.00009 Amp	8 mm	85 ns
MT45W2MW16PBA-60LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M		-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B48	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e1	30	260		8 mm	60 ns
MT45W2MV16BFB-851IT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel	TIN LEAD SILVER	BOTTOM	R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0			.00011 Amp	8 mm	85 ns
MT45W2MV16PAFA-85WT	Micron Technology	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M		-25 Cel	TIN LEAD SILVER	BOTTOM	R-PBGA-B48	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0				8 mm	85 ns
MT45W1MW16BDGB-708WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	1048576 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	1.7 V	-30 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	16777216 bit	1.7 V	SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1			.00007 Amp	8 mm	70 ns
MT45W2MW16BABB-608WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M		-30 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e1		260		8 mm	60 ns
MT45W2MW16PAFA-85LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	17 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0			.00009 Amp	8 mm	85 ns
MT45W1MW16BAFB-856LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		1MX16	1M		-40 Cel	TIN LEAD SILVER	BOTTOM	R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	16777216 bit	1.7 V		e0				8 mm	85 ns
MT45W4MW16PCGA-70LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	4194304 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-30 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B48	1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V		e1			.00012 Amp	8 mm	70 ns
MT45W1MW16BAFB-708WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	1048576 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	1.7 V	-30 Cel	TIN LEAD	BOTTOM	R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	16777216 bit	1.7 V		e0			.00008 Amp	8 mm	70 ns
MT45W4MV16BBB-858IT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V		e1		260	.00012 Amp	8 mm	85 ns
MT45W4MV16BFB-608LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		4194304 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		4MX16	4M		-25 Cel	TIN LEAD SILVER	BOTTOM	R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V		e0				8 mm	60 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.