ZIP SRAM 309

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CYM1851PZ-20C	Cypress Semiconductor	SRAM MODULE	COMMERCIAL	72	ZIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	MOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1200 mA	1048576 words		COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	ZIP72/76,.1,.1	SRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	4.5 V	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZMA-T72	5.5 V			Not Qualified	33554432 bit	4.5 V	CONFIGURABLE AS 1M X 32	e0	YES	.08 Amp		20 ns
CYM1831LPZ-35C	Infineon Technologies	SRAM MODULE	COMMERCIAL	64	ZIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	720 mA	65536 words		COMMON	5	5	32	IN-LINE	ZIP64/68,.1,.1	SRAMs	1.27 mm	70 Cel	3-STATE	64KX32	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T64				Not Qualified	2097152 bit			e0		.032 Amp		35 ns
CYM1831LPZ-25C	Infineon Technologies	SRAM MODULE	COMMERCIAL	64	ZIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	720 mA	65536 words		COMMON	5	5	32	IN-LINE	ZIP64/68,.1,.1	SRAMs	1.27 mm	70 Cel	3-STATE	64KX32	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T64				Not Qualified	2097152 bit			e0		.032 Amp		25 ns
CYM1831LPZ-45C	Infineon Technologies	SRAM MODULE	COMMERCIAL	64	ZIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	720 mA	65536 words		COMMON	5	5	32	IN-LINE	ZIP64/68,.1,.1	SRAMs	1.27 mm	70 Cel	3-STATE	64KX32	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T64				Not Qualified	2097152 bit			e0		.032 Amp		45 ns
TC5116402Z-80	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	24	ZIP	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			70 mA	4194304 words	NO	COMMON	5	5	4	IN-LINE	ZIP24,.1	SRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M		0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T24				Not Qualified	16777216 bit			e0		.001 Amp		80 ns
TC511002Z-12	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			50 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M		0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20				Not Qualified	1048576 bit			e0		.001 Amp		120 ns
TC5116402Z-70	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	24	ZIP	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			80 mA	4194304 words	NO	COMMON	5	5	4	IN-LINE	ZIP24,.1	SRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M		0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T24				Not Qualified	16777216 bit			e0		.001 Amp		70 ns
TC511002Z-10	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			60 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M		0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20				Not Qualified	1048576 bit			e0		.001 Amp		100 ns
TC5116402Z-60	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	24	ZIP	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			90 mA	4194304 words	NO	COMMON	5	5	4	IN-LINE	ZIP24,.1	SRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M		0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T24				Not Qualified	16777216 bit			e0		.001 Amp		60 ns
TC514258Z-12	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			55 mA	262144 words		COMMON	5	5	4	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K		0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20				Not Qualified	1048576 bit			e0		.001 Amp		120 ns
TC514258Z-10	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			65 mA	262144 words		COMMON	5	5	4	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K		0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20				Not Qualified	1048576 bit			e0		.001 Amp		100 ns
TC511002Z-85	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			70 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M		0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20				Not Qualified	1048576 bit			e0		.001 Amp		85 ns
7MP1021S40Z	Renesas Electronics	MULTI-PORT SRAM MODULE	COMMERCIAL	64	ZIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	940 mA	131072 words		COMMON	5	5	8	IN-LINE	ZIP64/68,.1,.1	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	TIN LEAD	ZIG-ZAG	2	R-PZIP-T64				Not Qualified	1048576 bit			e0		.125 Amp		40 ns
7MP1021S50Z	Renesas Electronics	MULTI-PORT SRAM MODULE	COMMERCIAL	64	ZIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	940 mA	131072 words		COMMON	5	5	8	IN-LINE	ZIP64/68,.1,.1	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	TIN LEAD	ZIG-ZAG	2	R-PZIP-T64				Not Qualified	1048576 bit			e0		.125 Amp		50 ns
7MP4045S30Z	Renesas Electronics	SRAM MODULE	COMMERCIAL	64	ZIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1200 mA	262144 words		COMMON	5	5	32	IN-LINE	ZIP64/68,.1,.1	SRAMs	1.27 mm	70 Cel	3-STATE	256KX32	256K	4.5 V	0 Cel	TIN LEAD	ZIG-ZAG		R-PZIP-T64		15.24 mm		Not Qualified	8388608 bit			e0		.08 Amp		30 ns
7MP1021S65Z	Renesas Electronics	MULTI-PORT SRAM MODULE	COMMERCIAL	64	ZIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	940 mA	131072 words		COMMON	5	5	8	IN-LINE	ZIP64/68,.1,.1	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	TIN LEAD	ZIG-ZAG	2	R-PZIP-T64				Not Qualified	1048576 bit			e0		.125 Amp		65 ns
7MP1023S50Z	Renesas Electronics	MULTI-PORT SRAM MODULE	COMMERCIAL	64	ZIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	660 mA	65536 words		COMMON			8	IN-LINE	ZIP64/68,.1,.1	SRAMs	1.27 mm	70 Cel	3-STATE	64KX8	64K	4.5 V	0 Cel	TIN LEAD	ZIG-ZAG	2	R-PZIP-T64				Not Qualified	524288 bit			e0		.065 Amp		50 ns
7MP1023S40Z	Renesas Electronics	MULTI-PORT SRAM MODULE	COMMERCIAL	64	ZIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	660 mA	65536 words		COMMON			8	IN-LINE	ZIP64/68,.1,.1	SRAMs	1.27 mm	70 Cel	3-STATE	64KX8	64K	4.5 V	0 Cel	TIN LEAD	ZIG-ZAG	2	R-PZIP-T64				Not Qualified	524288 bit			e0		.065 Amp		40 ns
7MP1023S65Z	Renesas Electronics	MULTI-PORT SRAM MODULE	COMMERCIAL	64	ZIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	660 mA	65536 words		COMMON			8	IN-LINE	ZIP64/68,.1,.1	SRAMs	1.27 mm	70 Cel	3-STATE	64KX8	64K	4.5 V	0 Cel	TIN LEAD	ZIG-ZAG	2	R-PZIP-T64				Not Qualified	524288 bit			e0		.065 Amp		65 ns
UPD421002V-10	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			60 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M		0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20				Not Qualified	1048576 bit			e0		.001 Amp		100 ns
UPD424268V-60	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			90 mA	262144 words		COMMON	5	5	4	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K		0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20				Not Qualified	1048576 bit			e0		.001 Amp		60 ns
IDT7MP4045S30Z	Renesas Electronics	SRAM MODULE	COMMERCIAL	64	ZIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1200 mA	262144 words		COMMON	5	5	32	IN-LINE	ZIP64/68,.1,.1	SRAMs	1.27 mm	70 Cel	3-STATE	256KX32	256K	4.5 V	0 Cel	TIN LEAD	ZIG-ZAG		R-PZIP-T64		15.24 mm		Not Qualified	8388608 bit			e0		.08 Amp		30 ns
UPD424258V-70	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			80 mA	262144 words		COMMON	5	5	4	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K		0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20				Not Qualified	1048576 bit			e0		.001 Amp		70 ns
UPD424258V-80	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			70 mA	262144 words		COMMON	5	5	4	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K		0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20				Not Qualified	1048576 bit			e0		.001 Amp		80 ns
UPD421002V-80	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			70 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M		0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20				Not Qualified	1048576 bit			e0		.001 Amp		80 ns
UPD424258V-10	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			60 mA	262144 words		COMMON	5	5	4	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K		0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20				Not Qualified	1048576 bit			e0		.001 Amp		100 ns
IDT7MP1023S40Z	Renesas Electronics	MULTI-PORT SRAM MODULE	COMMERCIAL	64	ZIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	660 mA	65536 words		COMMON			8	IN-LINE	ZIP64/68,.1,.1	SRAMs	1.27 mm	70 Cel	3-STATE	64KX8	64K	4.5 V	0 Cel	TIN LEAD	ZIG-ZAG	2	R-PZIP-T64				Not Qualified	524288 bit			e0		.065 Amp		40 ns
IDT7MP1021S65Z	Renesas Electronics	MULTI-PORT SRAM MODULE	COMMERCIAL	64	ZIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	940 mA	131072 words		COMMON	5	5	8	IN-LINE	ZIP64/68,.1,.1	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	TIN LEAD	ZIG-ZAG	2	R-PZIP-T64				Not Qualified	1048576 bit			e0		.125 Amp		65 ns
UPD424258V-60	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			90 mA	262144 words		COMMON	5	5	4	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K		0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20				Not Qualified	1048576 bit			e0		.001 Amp		60 ns
UPD424268V-80	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			70 mA	262144 words		COMMON	5	5	4	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K		0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20				Not Qualified	1048576 bit			e0		.001 Amp		80 ns
UPD421002V-12	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE				1048576 words		SEPARATE	5	5	1	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M		0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20				Not Qualified	1048576 bit			e0				120 ns
UPD424258V-12	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			50 mA	262144 words		COMMON	5	5	4	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K		0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20				Not Qualified	1048576 bit			e0		.001 Amp		120 ns
IDT7MP1021S40Z	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	64	ZIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	940 mA	131072 words		COMMON	5	5	8	IN-LINE	ZIP64/68,.1,.1	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	TIN LEAD	ZIG-ZAG	2	R-PZIP-T64				Not Qualified	1048576 bit			e0		.125 Amp		40 ns
UPD421002V-60	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			90 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M		0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20				Not Qualified	1048576 bit			e0		.001 Amp		60 ns
IDT7MP1021S50Z	Renesas Electronics	MULTI-PORT SRAM MODULE	COMMERCIAL	64	ZIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	940 mA	131072 words		COMMON	5	5	8	IN-LINE	ZIP64/68,.1,.1	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	TIN LEAD	ZIG-ZAG	2	R-PZIP-T64				Not Qualified	1048576 bit			e0		.125 Amp		50 ns
IDT7MP1023S50Z	Renesas Electronics	MULTI-PORT SRAM MODULE	COMMERCIAL	64	ZIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	660 mA	65536 words		COMMON			8	IN-LINE	ZIP64/68,.1,.1	SRAMs	1.27 mm	70 Cel	3-STATE	64KX8	64K	4.5 V	0 Cel	TIN LEAD	ZIG-ZAG	2	R-PZIP-T64				Not Qualified	524288 bit			e0		.065 Amp		50 ns
UPD424268V-10	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			60 mA	262144 words		COMMON	5	5	4	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K		0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20				Not Qualified	1048576 bit			e0		.001 Amp		100 ns
IDT7MP1023S65Z	Renesas Electronics	MULTI-PORT SRAM MODULE	COMMERCIAL	64	ZIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	660 mA	65536 words		COMMON			8	IN-LINE	ZIP64/68,.1,.1	SRAMs	1.27 mm	70 Cel	3-STATE	64KX8	64K	4.5 V	0 Cel	TIN LEAD	ZIG-ZAG	2	R-PZIP-T64				Not Qualified	524288 bit			e0		.065 Amp		65 ns
UPD424268V-70	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			80 mA	262144 words		COMMON	5	5	4	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K		0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20				Not Qualified	1048576 bit			e0		.001 Amp		70 ns
UPD421002V-70	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			80 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M		0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20				Not Qualified	1048576 bit			e0		.001 Amp		70 ns
KM44C1002Z-12	Samsung	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE				1048576 words		COMMON	5	5	4	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M		0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20				Not Qualified	4194304 bit			e0				120 ns
MT5C2568Z-12XT	Micron Technology	STANDARD SRAM	MILITARY	28	ZIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	32768 words		COMMON	5	5	8	IN-LINE	ZIP28,.1	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T28				Not Qualified	262144 bit			e0		.005 Amp		12 ns
MT5C2568Z-35LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	ZIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	32768 words		COMMON	5	5	8	IN-LINE	ZIP28,.1	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T28	5.5 V	10.16 mm	2.8 mm	Not Qualified	262144 bit	4.5 V		e0	YES	.0003 Amp	35.455 mm	35 ns
MT5LC2568Z-15LP	Micron Technology	STANDARD SRAM	COMMERCIAL	28	ZIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		COMMON	3.3	3.3	8	IN-LINE	ZIP28,.1	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T28	3.63 V	10.16 mm	2.8 mm	Not Qualified	262144 bit	3 V		e0	YES	.00005 Amp	35.455 mm	15 ns
MT8LS132Z15LP	Micron Technology	SRAM MODULE	COMMERCIAL	72	ZIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1400 mA	1048576 words		COMMON	3.3	3.3	32	IN-LINE	ZIP72/76,.1,.1	SRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	2 V	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T72				Not Qualified	33554432 bit			e0		.0024 Amp		15 ns
MT5LC2568Z-15L	Micron Technology	STANDARD SRAM	COMMERCIAL	28	ZIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	55 mA	32768 words		COMMON	3.3	3.3	8	IN-LINE	ZIP28,.1	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T28	3.63 V	10.16 mm	2.8 mm	Not Qualified	262144 bit	3 V		e0	YES	.00005 Amp	35.455 mm	15 ns
MT5LC2568Z-15LPXT	Micron Technology	STANDARD SRAM	MILITARY	28	ZIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		COMMON	3.3	3.3	8	IN-LINE	ZIP28,.1	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	2 V	-55 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T28	3.63 V	10.16 mm	2.8 mm	Not Qualified	262144 bit	3 V		e0	YES	.00005 Amp	35.455 mm	15 ns
MT5C2568Z-45IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	ZIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	32768 words		COMMON	5	5	8	IN-LINE	ZIP28,.1	SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T28				Not Qualified	262144 bit			e0		.007 Amp		45 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.