SQUARE SRAM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
70V25S25PFGI	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	190 mA	8192 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	8KX16	8K	3 V	-40 Cel	MATTE TIN	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	131072 bit	3 V		e3	30	260		.005 Amp	14 mm	25 ns
71321LA20PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	200 mA	2048 words	COMMON	5	5	8	FLATPACK, LOW PROFILE	QFP64,.66SQ,32	SRAMs	.8 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3	30	260		.0015 Amp	14 mm	20 ns
71321LA20PFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	200 mA	2048 words	COMMON	5	5	8	FLATPACK, LOW PROFILE	QFP64,.66SQ,32	SRAMs	.8 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3	30	260		.0015 Amp	14 mm	20 ns
CY7C131E-55JXC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	275 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	1KX8	1K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	3	5.5 V	5.08 mm		19.1262 mm	Not Qualified	8192 bit	4.5 V		e3	20	260		.015 Amp	19.1262 mm	55 ns
CY7C131E-55JXCT	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	275 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	1KX8	1K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	3	5.5 V	5.08 mm		19.1262 mm	Not Qualified	8192 bit	4.5 V		e3		260		.015 Amp	19.1262 mm	55 ns
7007L20JGI	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	275 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	PGA68,11X11	SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	MATTE TIN	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm		24.2062 mm	Not Qualified	262144 bit	4.5 V		e3	30	260		.01 Amp	24.2062 mm	20 ns
71321SA35TFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	64	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	165 mA	2048 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP64,.47SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		10 mm	Not Qualified	16384 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	e3	30	260		.015 Amp	10 mm	35 ns
IDT7130LA25JGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	85 Cel	3-STATE	1KX8	1K	2 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	1	5.5 V	4.572 mm		19.1262 mm	Not Qualified	8192 bit	4.5 V		e3	30	260		.004 Amp	19.1262 mm	25 ns
70V25L25PFGI8	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	180 mA	8192 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	8KX16	8K	3 V	-40 Cel	MATTE TIN	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	131072 bit	3 V		e3	30	260		.005 Amp	14 mm	25 ns
71321LA20JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	200 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	1	5.5 V	4.572 mm		19.1262 mm	Not Qualified	16384 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP	e3	30	260		.0015 Amp	19.1262 mm	20 ns
71321LA25JGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	220 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	85 Cel	3-STATE	2KX8	2K	2 V	-40 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	1	5.5 V	4.572 mm		19.1262 mm	Not Qualified	16384 bit	4.5 V		e3	30	260		.004 Amp	19.1262 mm	25 ns
IDT70V261L25PFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	185 mA	16384 words	COMMON	3.3	3.3	16	FLATPACK	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	16KX16	16K	3 V	-40 Cel	MATTE TIN	QUAD	2	S-PQFP-G100	3	3.6 V				Not Qualified	262144 bit	3 V		e3	30	260		.003 Amp		25 ns
71321LA20TFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	64	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	200 mA	2048 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP64,.47SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		10 mm	Not Qualified	16384 bit	4.5 V	BATTERY BACK UP	e3	30	260		.004 Amp	10 mm	20 ns
71321LA25TFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	64	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	220 mA	2048 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP64,.47SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	2KX8	2K	2 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		10 mm	Not Qualified	16384 bit	4.5 V		e3	30	260		.004 Amp	10 mm	25 ns
71321LA55TFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	64	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	110 mA	2048 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP64,.47SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		10 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3	30	260		.0015 Amp	10 mm	55 ns
71321SA35TFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	64	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	165 mA	2048 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP64,.47SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		10 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3	30	260		.015 Amp	10 mm	35 ns
CY7C028-15AI	Cypress Semiconductor	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		65536 words	COMMON	5	5	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	64KX16	64K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	1048576 bit	4.5 V	FLOW-THROUGH	e0			YES	.0015 Amp	14 mm	15 ns
IDT7007L20JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	275 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	PGA68,11X11	SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm		24.2062 mm	Not Qualified	262144 bit	4.5 V		e3	30	260		.01 Amp	24.2062 mm	20 ns
IDT7130LA20JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	200 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	1KX8	1K	2 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	1	5.5 V	4.572 mm		19.1262 mm	Not Qualified	8192 bit	4.5 V		e3	30	260		.0015 Amp	19.1262 mm	20 ns
IDT71342LA20PFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4096 words		5		8	FLATPACK, LOW PROFILE			.8 mm	70 Cel	3-STATE	4KX8	4K	2 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	32768 bit	4.5 V	SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP	e3			YES		14 mm	20 ns
70V24L15PFGI8	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4096 words		3.3		16	FLATPACK				85 Cel		4KX16	4K		-40 Cel	MATTE TIN	QUAD		S-PQFP-G100	3	3.6 V					65536 bit	3 V		e3		260				15 ns
70V08L20PFGI	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	280 mA	65536 words	COMMON	3.3	3.3	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	64KX8	64K	3 V	-40 Cel	MATTE TIN	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	524288 bit	3 V		e3	30	260		.006 Amp	14 mm	20 ns
70V27L20PFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	230 mA	32768 words	COMMON	3.3	3.3	16	FLATPACK	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	32KX16	32K	3 V	-40 Cel	MATTE TIN	QUAD	2	S-PQFP-G100	3	3.6 V				Not Qualified	524288 bit	3 V		e3	30	260		.006 Amp		20 ns
71321SA55JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	155 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	1	5.5 V				Not Qualified	16384 bit	4.5 V		e3	30	260		.015 Amp		55 ns
7133LA25PFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	300 mA	2048 words	COMMON	5	5	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	2KX16	2K	2 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	32768 bit	4.5 V		e3	30	260		.004 Amp	14 mm	25 ns
IDT70V27L20PFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	230 mA	32768 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	32KX16	32K	3 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	524288 bit	3 V		e3	30	260		.006 Amp	14 mm	20 ns
IDT7130LA20JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	200 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	1KX8	1K	2 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	1	5.5 V	4.57 mm		19.1262 mm	Not Qualified	8192 bit	4.5 V		e3	30	260		.0015 Amp	19.1262 mm	20 ns
IDT7133LA25JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	300 mA	2048 words		5		16	CHIP CARRIER			1.27 mm	85 Cel		2KX16	2K		-40 Cel	MATTE TIN	QUAD		S-PQCC-J68		5.5 V	4.572 mm		24.2062 mm	Not Qualified	32768 bit	4.5 V		e3					24.2062 mm	25 ns
7133LA25JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	300 mA	2048 words	COMMON	5	5	16	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	85 Cel	3-STATE	2KX16	2K	2 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm		24.2062 mm	Not Qualified	32768 bit	4.5 V		e3	30	260		.004 Amp	24.2062 mm	25 ns
7133LA25JGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	300 mA	2048 words	COMMON	5	5	16	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	85 Cel	3-STATE	2KX16	2K	2 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	5.5 V	4.57 mm		24.2062 mm	Not Qualified	32768 bit	4.5 V		e3	30	260		.004 Amp	24.2062 mm	25 ns
71421LA25PFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	220 mA	2048 words	COMMON	5	5	8	FLATPACK, LOW PROFILE	QFP64,.66SQ,32	SRAMs	.8 mm	85 Cel	3-STATE	2KX8	2K	2 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3	30	260		.004 Amp	14 mm	25 ns
CY7C028-15AXI	Cypress Semiconductor	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		65536 words	COMMON	5	5	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	64KX16	64K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	1048576 bit	4.5 V	FLOW-THROUGH	e4	40	260		.0015 Amp	14 mm	15 ns
5962-8861012ZA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	PIN/PEG	PARALLEL	ASYNCHRONOUS	315 mA	2048 words	COMMON	5	5	16	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	2KX16	2K	4.5 V	-55 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P68	1	5.5 V	5.207 mm		29.464 mm	Qualified	32768 bit	4.5 V		e0		240	YES	.03 Amp	29.464 mm	55 ns
IDT70V25L25PFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		8192 words		3.3		16	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	85 Cel		8KX16	8K		-40 Cel	MATTE TIN	QUAD		S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	131072 bit	3 V		e3					14 mm	25 ns
IDT71321LA55JI	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	140 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	85 Cel	3-STATE	2KX8	2K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.572 mm		19.1262 mm	Not Qualified	16384 bit	4.5 V		e0	20	225		.004 Amp	19.1262 mm	55 ns
7008L15PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	325 mA	65536 words	COMMON	5	5	8	FLATPACK	QFP100,.63SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	64KX8	64K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G100	3	5.5 V				Not Qualified	524288 bit	4.5 V		e3	30	260		.005 Amp		15 ns
7028L15PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	340 mA	65536 words	COMMON	5		16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20		.5 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	0 Cel	Matte Tin (Sn)	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	1048576 bit	4.5 V		e3	NOT SPECIFIED	260	YES	.003 Amp	14 mm	15 ns
7028L15PFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	340 mA	65536 words	COMMON	5		16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20		.5 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	0 Cel	Matte Tin (Sn)	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	1048576 bit	4.5 V		e3	NOT SPECIFIED	260	YES	.003 Amp	14 mm	15 ns
709089L12PFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	305 mA	65536 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	64KX8	64K	4.5 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm	50 MHz	14 mm	Not Qualified	524288 bit	4.5 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	240		.005 Amp	14 mm	25 ns
70V261L25PFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	185 mA	16384 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	16KX16	16K	3 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	262144 bit	3 V		e3	30	260	YES	.003 Amp	14 mm	25 ns
70V3589S133BCI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	480 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	64KX36	64K	3.15 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.7 mm	133 MHz	17 mm	Not Qualified	2359296 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225		.04 Amp	17 mm	15 ns
70V38L20PFGI8	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	220 mA	65536 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	64KX18	64K	3 V	-40 Cel	MATTE TIN	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	1179648 bit	3 V		e3	30	260		.003 Amp	14 mm	20 ns
71321LA55JI	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	140 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	85 Cel	3-STATE	2KX8	2K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.572 mm		19.1262 mm	Not Qualified	16384 bit	4.5 V		e0	20	225		.004 Amp	19.1262 mm	55 ns
CY7C028V-20AI	Cypress Semiconductor	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	195 mA	65536 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	64KX16	64K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	1048576 bit	3 V	AUTOMATIC POWER-DOWN	e0				.00005 Amp	14 mm	20 ns
709089L12PFI	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	100	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		FLAT	PARALLEL	SYNCHRONOUS	305 mA	65536 words	COMMON	5	5	8	FLATPACK	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	64KX8	64K	4.5 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-F100	3	5.5 V	1.6 mm	50 MHz	14 mm	Not Qualified	524288 bit	4.5 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	240		.005 Amp	14 mm	12 ns
70T3519S133BC	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	370 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	256KX36	256K	2.4 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.5 mm	133 MHz	17 mm	Not Qualified	9437184 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225		.015 Amp	17 mm	15 ns
70V06L20PFGI	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		16384 words		3.3		8	FLATPACK, LOW PROFILE			.8 mm	85 Cel		16KX8	16K		-40 Cel	Matte Tin (Sn)	QUAD		S-PQFP-G64	3	3.6 V	1.6 mm		14 mm	Not Qualified	131072 bit	3 V		e3	NOT SPECIFIED	260			14 mm	20 ns
7130LA20JG8	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	200 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	1KX8	1K	2 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm		19.1262 mm	Not Qualified	8192 bit	4.5 V		e3	30	260		.0015 Amp	19.1262 mm	20 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.