4096 SRAM 12

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	Technology	Terminal Form	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	JESD-30 Code	Qualification	Memory Density	JESD-609 Code	Maximum Standby Current	Maximum Access Time
TC5116402J-60	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	90 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/28,.44	SRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J24	Not Qualified	16777216 bit	e0	.001 Amp	60 ns
TC5116402Z-80	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	24	ZIP	4096	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	70 mA	4194304 words	NO	COMMON	5	5	4	IN-LINE	ZIP24,.1	SRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T24	Not Qualified	16777216 bit	e0	.001 Amp	80 ns
TC5116402TR-80	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	24	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	70 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46	SRAMs	1.27 mm	70 Cel	YES	3-STATE	4MX4	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24	Not Qualified	16777216 bit	e0	.001 Amp	80 ns
TC5116402J-80	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	70 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/28,.44	SRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J24	Not Qualified	16777216 bit	e0	.001 Amp	80 ns
TC5116402J-70	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	80 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/28,.44	SRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J24	Not Qualified	16777216 bit	e0	.001 Amp	70 ns
TC5116402FT-60	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	24	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	90 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46	SRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24	Not Qualified	16777216 bit	e0	.001 Amp	60 ns
TC5116402TR-70	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	24	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	80 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46	SRAMs	1.27 mm	70 Cel	YES	3-STATE	4MX4	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24	Not Qualified	16777216 bit	e0	.001 Amp	70 ns
TC5116402Z-70	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	24	ZIP	4096	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	80 mA	4194304 words	NO	COMMON	5	5	4	IN-LINE	ZIP24,.1	SRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T24	Not Qualified	16777216 bit	e0	.001 Amp	70 ns
TC5116402FT-70	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	24	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	80 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46	SRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24	Not Qualified	16777216 bit	e0	.001 Amp	70 ns
TC5116402FT-80	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	24	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	70 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46	SRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24	Not Qualified	16777216 bit	e0	.001 Amp	80 ns
TC5116402Z-60	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	24	ZIP	4096	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	90 mA	4194304 words	NO	COMMON	5	5	4	IN-LINE	ZIP24,.1	SRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T24	Not Qualified	16777216 bit	e0	.001 Amp	60 ns
TC5116402TR-60	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	24	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	90 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46	SRAMs	1.27 mm	70 Cel	YES	3-STATE	4MX4	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24	Not Qualified	16777216 bit	e0	.001 Amp	60 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.