COMMERCIAL SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
SN74LS319J4	Texas Instruments	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	CERAMIC	NO		TTL	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	OPEN-COLLECTOR	16X4	16			DUAL		R-XDIP-T16
SN74172J	Texas Instruments	MULTI-PORT SRAM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	SYNCHRONOUS		8 words		5		2	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8X2	8			DUAL	3	R-GDIP-T24		5.25 V			Not Qualified	16 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED	NO
SN74S207N1	Texas Instruments	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		TTL	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words				4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	3-STATE	256X4	256			DUAL		R-PDIP-T16					Not Qualified	1024 bit				NOT SPECIFIED	NOT SPECIFIED
SN74LS315N1	Texas Instruments	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		TTL	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words				1	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	OPEN-COLLECTOR	1KX1	1K			DUAL		R-PDIP-T16					Not Qualified	1024 bit
SN74ACT2152-35FN	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			125 mA	2048 words		5	5	8	CHIP CARRIER	LDCC28,.5SQ	SRAMs	1.27 mm	70 Cel		2KX8	2K			QUAD		S-PQCC-J28					Not Qualified	16384 bit
SN74LS212J4	Texas Instruments	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	CERAMIC	NO		TTL	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				9	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16X9	16			DUAL		R-XDIP-T20										NOT SPECIFIED	NOT SPECIFIED
SN74LS670DE4	Texas Instruments	STANDARD SRAM	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	TTL	GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5	5	4	SMALL OUTLINE	SOP16,.25	Other Memory ICs	1.27 mm	70 Cel		4X4	4		NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G16	1	5.25 V	1.75 mm	3.9 mm	Not Qualified	16 bit	4.75 V		e4	30	260			9.9 mm	45 ns
SN74ACT2140A-25FN	Texas Instruments	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS		8192 words	COMMON			18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	8KX18	8K			QUAD		S-PQCC-J52					Not Qualified	147456 bit									25 ns
SN74ACT2154-35FN	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			125 mA	2048 words		5	5	8	CHIP CARRIER	LDCC28,.5SQ	SRAMs	1.27 mm	70 Cel		2KX8	2K			QUAD		S-PQCC-J28					Not Qualified	16384 bit
SN74LS213J	Texas Instruments	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	CERAMIC	NO		TTL	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				12	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16X12	16			DUAL		R-XDIP-T20					Not Qualified					NOT SPECIFIED	NOT SPECIFIED
SN7484AJ4	Texas Instruments	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	CERAMIC	NO		TTL	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				1	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	OPEN-COLLECTOR	16X1	16			DUAL		R-XDIP-T16										NOT SPECIFIED	NOT SPECIFIED
SN74ALS218JP4	Texas Instruments	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	CERAMIC	NO		TTL	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32 words				8	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	32X8	32			DUAL		R-XDIP-T20										NOT SPECIFIED	NOT SPECIFIED
DS1730YLPM-150	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	34			PLASTIC/EPOXY			CMOS				40 mA	32768 words			3/3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		32KX8	32K										Not Qualified	262144 bit							.004 Amp		150 ns
DS1350ABLPM-70	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		512KX8	512K		TIN LEAD	DUAL		R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	4194304 bit	4.75 V	OVER 10 YEARS DATA RETENTION	e0					24.5745 mm	70 ns
DS2227-70	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	72	SIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	280 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	SSIM72	SRAMs	1.27 mm	70 Cel		512KX8	512K			SINGLE		R-XSMA-N72	1	5.5 V			Not Qualified	4194304 bit	4.5 V	DATA RETENTION > 10 YEARS; CONFIGURABLE AS 128K X 32					.28 Amp		70 ns
DS1330ABLPM-100	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		32KX8	32K		TIN LEAD	DUAL		R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	262144 bit	4.75 V	OVER 10 YEARS DATA RETENTION	e0					24.5745 mm	100 ns
DS1345ABP-100+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		128KX8	128K		Matte Tin (Sn) - annealed	DUAL		R-XDMA-U34		5.25 V			Not Qualified	1048576 bit	4.75 V	10 YEAR DATA RETENTION	e3				.00015 Amp		100 ns
DS1345ABLPM-70	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		128KX8	128K		TIN LEAD	DUAL		R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.75 V	OVER 10 YEARS DATA RETENTION	e0					24.5745 mm	70 ns
DS1330ABLPM-70	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		32KX8	32K		TIN LEAD	DUAL		R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	262144 bit	4.75 V	OVER 10 YEARS DATA RETENTION	e0					24.5745 mm	70 ns
DS1330ABP-70+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		32KX8	32K		Matte Tin (Sn) - annealed	DUAL		R-XDMA-U34		5.25 V			Not Qualified	262144 bit	4.75 V		e3				.00015 Amp		70 ns
DS2217-200	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	30	SIMM	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD			100 mA	131072 words				8	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel		128KX8	128K			SINGLE		R-PSMA-N30					Not Qualified	1048576 bit							.025 Amp		200 ns
DS1609S-35	Analog Devices	MULTI-PORT SRAM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	256 words	COMMON	5	5	8	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	70 Cel	3-STATE	256X8	256	4.5 V	TIN LEAD	DUAL	2, (MUXED)	R-PDSO-G24	1	5.5 V	2.65 mm	7.5 mm	Not Qualified	2048 bit	2.5 V	MUX ADDRESS DATA LATCH	e0				.0003 Amp	15.4 mm	35 ns
DS1345ABL-100	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel		128KX8	128K			DUAL		R-PDSO-U34	1	5.25 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.75 V	WITH BATTERY MONITOR					.00015 Amp	24.5745 mm	100 ns
DS1645EE-100	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	131072 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel		128KX8	128K		TIN LEAD	DUAL		R-PDIP-T32					Not Qualified	1048576 bit			e0				.005 Amp		100 ns
DS1350YP-100+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		512KX8	512K		Matte Tin (Sn) - annealed	DUAL		R-XDMA-U34		5.5 V			Not Qualified	4194304 bit	4.5 V		e3				.0006 Amp		100 ns
DS1350W-150	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	MICROELECTRONIC ASSEMBLY				70 Cel		512KX8	512K		TIN LEAD	DUAL		R-XDMA-T28		3.6 V			Not Qualified	4194304 bit	3 V	10 YEARS MINIMUM DATA RETENTION	e0						150 ns
DS1330W-150	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	MICROELECTRONIC ASSEMBLY				70 Cel		32KX8	32K		TIN LEAD	DUAL		R-XDMA-T28		3.6 V			Not Qualified	262144 bit	3 V	10 YEARS MINIMUM DATA RETENTION	e0						150 ns
DS1345Y	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		131072 words		5		8	MICROELECTRONIC ASSEMBLY				70 Cel		128KX8	128K		TIN LEAD	DUAL		R-XDMA-N34		5.5 V			Not Qualified	1048576 bit	4.5 V	10 YEARS OF DATA RETENTION PERIOD	e0						70 ns
DS1630YLPM-100	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	34			PLASTIC/EPOXY			CMOS				85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		32KX8	32K										Not Qualified	262144 bit							.005 Amp		100 ns
DS1650Y-70	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	524288 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel		512KX8	512K		TIN LEAD	DUAL		R-PDIP-T32					Not Qualified	4194304 bit			e0				.005 Amp		70 ns
DS1645ABLPM-70	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	34			PLASTIC/EPOXY			CMOS				85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		128KX8	128K										Not Qualified	1048576 bit							.005 Amp		70 ns
DS1650YLPM-100	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	34			PLASTIC/EPOXY			CMOS				85 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		512KX8	512K										Not Qualified	4194304 bit							.005 Amp		100 ns
DS1645ABL-85	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel		128KX8	128K		TIN LEAD	DUAL		R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.75 V	10 YEAR DATA RETENTION	e0				.005 Amp	24.5745 mm	85 ns
DS1645ABL-120	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel		128KX8	128K		TIN LEAD	DUAL		R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.75 V	10 YEAR DATA RETENTION	e0				.005 Amp	24.5745 mm	120 ns
DS1645YL-100	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	34			PLASTIC/EPOXY			CMOS				85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		128KX8	128K										Not Qualified	1048576 bit							.005 Amp		100 ns
DS1650YL-100	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	34			PLASTIC/EPOXY			CMOS				85 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		512KX8	512K										Not Qualified	4194304 bit							.005 Amp		100 ns
DS1630AB-70	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		TIN LEAD	DUAL		R-PDIP-T28					Not Qualified	262144 bit			e0				.005 Amp		70 ns
DS1630YL-100	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	34			PLASTIC/EPOXY			CMOS				85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		32KX8	32K										Not Qualified	262144 bit							.005 Amp		100 ns
DS1630ABLPM-100	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	34			PLASTIC/EPOXY			CMOS				85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		32KX8	32K										Not Qualified	262144 bit							.005 Amp		100 ns
DS1630AB-200	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		TIN LEAD	DUAL		R-PDIP-T28					Not Qualified	262144 bit			e0				.005 Amp		200 ns
DS1658AB-100	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			170 mA	131072 words		5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	70 Cel		128KX16	128K		TIN LEAD	DUAL		R-PDIP-T40					Not Qualified	2097152 bit			e0				.01 Amp		100 ns
DS1630Y-200	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		TIN LEAD	DUAL		R-PDIP-T28					Not Qualified	262144 bit			e0				.005 Amp		200 ns
DS1630AB-150	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		TIN LEAD	DUAL		R-PDIP-T28					Not Qualified	262144 bit			e0				.005 Amp		150 ns
DS1645YL-85	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel		128KX8	128K		TIN LEAD	DUAL		R-PDSO-U34		5.5 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.5 V	10 YEAR DATA RETENTION	e0				.005 Amp	24.5745 mm	85 ns
DS1645AB-85	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	131072 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel		128KX8	128K		TIN LEAD	DUAL		R-PDIP-T32					Not Qualified	1048576 bit			e0				.005 Amp		85 ns
DS1650Y-100	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	524288 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel		512KX8	512K		TIN LEAD	DUAL		R-PDIP-T32					Not Qualified	4194304 bit			e0				.005 Amp		100 ns
DS1630YL-70	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	34			PLASTIC/EPOXY			CMOS				85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		32KX8	32K										Not Qualified	262144 bit							.005 Amp		70 ns
DS1650AB-85	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	524288 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel		512KX8	512K		TIN LEAD	DUAL		R-PDIP-T32					Not Qualified	4194304 bit			e0				.005 Amp		85 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.