COMMERCIAL SRAM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
M628008-20E1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	8KX8	8K	4.5 V	TIN LEAD	DUAL		R-PDSO-J28				Not Qualified	65536 bit			e0				.01 Amp		20 ns
M68AF127BL70B1T	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE			2.54 mm	70 Cel			128KX8	128K			DUAL		R-PDIP-T32	5.5 V	4.83 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V							42.035 mm	70 ns
MK48H99N-40	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		9	IN-LINE				70 Cel		3-STATE	8KX9	8K			DUAL	1	R-PDIP-T28	5.5 V			Not Qualified	73728 bit	4.5 V					YES			40 ns
M46Z256Y-120PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	40		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		16	MICROELECTRONIC ASSEMBLY				70 Cel		3-STATE	256KX16	256K			DUAL	1	R-XDMA-T40	5.5 V			Not Qualified	4194304 bit	4.5 V	BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION; 5 YEARS OF DATA RETENTION AT 25 DEG. CENT.				YES			120 ns
M624064-15PS1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	SDIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	65536 words	COMMON	5	5	4	IN-LINE, SHRINK PITCH	DIP24,.3	SRAMs	1.778 mm	70 Cel		3-STATE	64KX4	64K	2 V	TIN LEAD	DUAL	1	R-PDIP-T24	5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e0			NO	.001 Amp	22.86 mm	15 ns
M68AR256ML70ZB1F	STMicroelectronics	STANDARD SRAM	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	6 mA	262144 words	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel		3-STATE	256KX16	256K	1 V	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	1.95 V	1.2 mm	6 mm	Not Qualified	4194304 bit	1.65 V		e1				.000003 Amp	7 mm	70 ns
IMS1630LP45S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K	2 V	TIN LEAD	DUAL		R-PDIP-T28				Not Qualified	65536 bit			e0				.00007 Amp		450 ns
M68AW256ML70ZH1T	STMicroelectronics	STANDARD SRAM	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel		3-STATE	256KX16	256K	1.5 V	TIN LEAD	BOTTOM		R-PBGA-B48	3.6 V	1.2 mm	6 mm	Not Qualified	4194304 bit	2.7 V		e0				.000009 Amp	8 mm	70 ns
MK41H67P-20	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel		3-STATE	16KX1	16K		TIN LEAD	DUAL		R-XDIP-T20				Not Qualified	16384 bit			e0						20 ns
M68AW127BM70MC1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	1.5 V	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	3 mm	11.303 mm	Not Qualified	1048576 bit	2.7 V		e0				.0000045 Amp	20.447 mm	70 ns
M68AW511AL70MC1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3	3/3.3	8	SMALL OUTLINE	TSOP32,.46	SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	1.5 V	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	3 mm	11.303 mm	Not Qualified	4194304 bit	2.7 V		e0				.000009 Amp	20.445 mm	70 ns
M68AF031AM55N1F	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel		3-STATE	32KX8	32K	2 V	TIN/TIN BISMUTH	DUAL		R-PDSO-G28	5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V		e3/e6	NOT SPECIFIED	260		.000006 Amp	11.8 mm	55 ns
M621100-20E1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	160 mA	1048576 words	SEPARATE	5	5	1	SMALL OUTLINE	DIP28,.4	SRAMs	1.27 mm	70 Cel		3-STATE	1MX1	1M	2 V	TIN LEAD	DUAL	1	R-PDSO-J28	5.5 V	3.68 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e0			NO	.004 Amp	17.935 mm	20 ns
IMS1620S-35S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel		3-STATE	16KX4	16K	4.5 V	TIN LEAD	DUAL		R-XDIP-T22				Not Qualified	65536 bit			e0				.014 Amp		35 ns
M68AF511AM55NC1T	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	55 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	2 V	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e0				.000009 Amp	20.95 mm	55 ns
M68AR256ML55ZB1T	STMicroelectronics	STANDARD SRAM	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel		3-STATE	256KX16	256K	1 V	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B48	1.95 V	1.2 mm	6 mm	Not Qualified	4194304 bit	1.65 V		e0				.000003 Amp	7 mm	55 ns
M68AF511AM55MC1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	55 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	2 V	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	3 mm	11.305 mm	Not Qualified	4194304 bit	4.5 V		e0				.000009 Amp	20.445 mm	55 ns
M68AW128ML55ZB1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	26 mA	131072 words	COMMON	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel		3-STATE	128KX16	128K	1.5 V	TIN LEAD	BOTTOM		R-PBGA-B48	3.6 V	1.2 mm	6 mm	Not Qualified	2097152 bit	2.7 V		e0				.000009 Amp	8 mm	55 ns
IMS1629E-25S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel		3-STATE	16KX4	16K	2 V	TIN LEAD	DUAL		R-PDSO-J24				Not Qualified	65536 bit			e0				.00007 Amp		25 ns
M68AF031AL55N1T	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel		3-STATE	32KX8	32K	2 V	TIN LEAD	DUAL		R-PDSO-G28	5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V		e0				.000006 Amp	11.8 mm	55 ns
IMS1403P-55	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel		3-STATE	16KX1	16K	4.5 V	TIN LEAD	DUAL	1	R-PDIP-T20	5.5 V	4.455 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0			NO		26.289 mm	50 ns
M68AW256DM55ND1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	26 mA	262144 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	1 V	TIN LEAD	DUAL		R-PDSO-G44	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V		e0					18.41 mm	55 ns
IMS1620S-25	STMicroelectronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel		3-STATE	16KX4	16K	4.5 V	TIN LEAD	DUAL	1	R-CDIP-T22	5.5 V	4.521 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0			NO	.014 Amp	27.94 mm	25 ns
IMS1400P70L	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel		3-STATE	16KX1	16K		TIN LEAD	DUAL		R-PDIP-T20				Not Qualified	16384 bit			e0						65 ns
T74LS670D1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words		5	5	4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	70 Cel			4X4	4			DUAL		R-GDIP-T16	5.25 V	5.08 mm	7.62 mm	Not Qualified	16 bit	4.75 V								45 ns
M68AF031AM70N1T	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel		3-STATE	32KX8	32K	2 V	TIN LEAD	DUAL		R-PDSO-G28	5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V		e0				.000006 Amp	11.8 mm	70 ns
IMS1203S-45	STMicroelectronics	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel		3-STATE	4KX1	4K	4.5 V	TIN LEAD	DUAL	1	R-CDIP-T18	5.5 V		7.62 mm	Not Qualified	4096 bit	4.5 V		e0			NO	.006 Amp	22.86 mm	45 ns
MK48Z30B12	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel			32KX8	32K		TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	9.652 mm	15.24 mm	Not Qualified	262144 bit	4.75 V	10 YEAR DATA RETENTION PERIOD; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP	e0			YES	.002 Amp		120 ns
T74LS170B1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words		5	5	4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	70 Cel			4X4	4		TIN LEAD	DUAL		R-PDIP-T16	5.25 V	5.1 mm	7.62 mm	Not Qualified	16 bit	4.75 V		e0						40 ns
IMS1824E-45	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	64KX4	64K	4.5 V	TIN LEAD	DUAL		R-PDSO-J28				Not Qualified	262144 bit			e0				.01 Amp		45 ns
IMS1820E-25	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel		3-STATE	64KX4	64K	4.5 V	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.556 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e0			NO	.01 Amp	15.418 mm	25 ns
IMS1624E-35S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	110 mA	16384 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel		3-STATE	16KX4	16K	4.5 V	TIN LEAD	DUAL		R-PDSO-J24				Not Qualified	65536 bit			e0				.014 Amp		35 ns
M68AW256MN55ZH1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	15 mA	262144 words	COMMON	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel		3-STATE	256KX16	256K	1.5 V	TIN LEAD	BOTTOM		R-PBGA-B48	3.6 V	1.2 mm	6 mm	Not Qualified	4194304 bit	2.7 V		e0				.000009 Amp	8 mm	55 ns
MK41L67P25	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	16384 words	SEPARATE	3.3	3.3	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel		3-STATE	16KX1	16K	2 V		DUAL		R-XDIP-T20				Not Qualified	16384 bit							.00005 Amp		25 ns
MK48Z02B20	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		3-STATE	2KX8	2K		TIN LEAD	DUAL	1	R-PDIP-T24	5.5 V	9.562 mm	15.24 mm	Not Qualified	16384 bit	4.75 V	BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION	e0			YES	.001 Amp		200 ns
MK48H89N-20	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		9	IN-LINE				70 Cel		3-STATE	8KX9	8K	2 V		DUAL	1	R-PDIP-T28	5.5 V			Not Qualified	73728 bit	4.5 V					YES			20 ns
IMS1625S-20	STMicroelectronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel		3-STATE	16KX4	16K	2 V	TIN LEAD	DUAL	1	R-CDIP-T22	5.5 V	4.521 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0			NO	.00007 Amp	27.94 mm	20 ns
MK41H68N-25	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel		3-STATE	4KX4	4K	2 V	TIN LEAD	DUAL	1	R-PDIP-T20	5.5 V	5.334 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0			NO		26.289 mm	25 ns
IMS1203P-45	STMicroelectronics	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel		3-STATE	4KX1	4K	4.5 V	TIN LEAD	DUAL	1	R-PDIP-T18	5.5 V	3.988 mm	7.62 mm	Not Qualified	4096 bit	4.5 V		e0			NO	.006 Amp	22.86 mm	45 ns
M68AR512DN55ZB1T	STMicroelectronics	STANDARD SRAM	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	70 Cel			512KX16	512K			BOTTOM		R-PBGA-B48	1.95 V	1.2 mm	6 mm	Not Qualified	8388608 bit	1.65 V							7 mm	55 ns
IMS1800W-35	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	262144 words	SEPARATE	5	5	1	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	70 Cel		3-STATE	256KX1	256K	4.5 V	TIN LEAD	QUAD	1	R-CQCC-N28	5.5 V	1.981 mm	8.89 mm	Not Qualified	262144 bit	4.5 V		e0			NO	.01 Amp	13.97 mm	35 ns
M621256-12E1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	262144 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel		3-STATE	256KX1	256K	2 V	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.556 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e0			NO	.01 Amp	15.418 mm	12 ns
M68AF127BL70N1T	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	70 Cel		3-STATE	128KX8	128K	2 V	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e0				.0000045 Amp	18.4 mm	70 ns
MK48Z02-20	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel			2KX8	2K			DUAL		R-PDIP-T24				Not Qualified	16384 bit							.001 Amp		200 ns
IMS1630LH-10	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	90 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.56	SRAMs	1.27 mm	70 Cel		3-STATE	8KX8	8K	2 V	TIN LEAD	DUAL	1	R-PDSO-G28	5.5 V	3.404 mm	8.4 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.00007 Amp	18.1 mm	100 ns
IMS1620P-35S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel		3-STATE	16KX4	16K	4.5 V	TIN LEAD	DUAL		R-PDIP-T22				Not Qualified	65536 bit			e0				.014 Amp		35 ns
M68AF031AL55NS1T	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel	YES	3-STATE	32KX8	32K	2 V	TIN LEAD	DUAL		R-PDSO-G28	5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V		e0				.000006 Amp	11.8 mm	55 ns
IMS1635P-25S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K	2 V	TIN LEAD	DUAL		R-PDIP-T28				Not Qualified	65536 bit			e0				.00007 Amp		25 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.