COMMERCIAL EXTENDED SRAM 77

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Nominal Negative Supply Voltage	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MC10H145FNR2	Onsemi	STANDARD SRAM	COMMERCIAL EXTENDED	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	ECL	-5.2 V	J BEND	PARALLEL	ASYNCHRONOUS		16 words				4	CHIP CARRIER	LDCC20,.4SQ	Other Memory ICs	1.27 mm	75 Cel			16X4	16		0 Cel	TIN LEAD	QUAD	S-PQCC-J20			4.57 mm	8.965 mm	Not Qualified	64 bit			e0				8.965 mm	6 ns
MC10H145L	Onsemi	STANDARD SRAM	COMMERCIAL EXTENDED	16	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	ECL	-5.2 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	75 Cel			16X4	16		0 Cel	TIN LEAD	DUAL	R-CDIP-T16			5.08 mm	7.62 mm	Not Qualified	64 bit			e0				19.49 mm	6 ns
MC10H145P	Onsemi	STANDARD SRAM	COMMERCIAL EXTENDED	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	ECL	-5.2 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	75 Cel			16X4	16		0 Cel	TIN LEAD	DUAL	R-PDIP-T16			4.44 mm	7.62 mm	Not Qualified	64 bit			e0		235		19.175 mm	6 ns
MC10H145FN	Onsemi	STANDARD SRAM	COMMERCIAL EXTENDED	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	ECL	-5.2 V	J BEND	PARALLEL	ASYNCHRONOUS		16 words				4	CHIP CARRIER	LDCC20,.4SQ	Other Memory ICs	1.27 mm	75 Cel			16X4	16		0 Cel	TIN LEAD	QUAD	S-PQCC-J20			4.57 mm	8.965 mm	Not Qualified	64 bit			e0				8.965 mm	6 ns
M69AR048BL70ZB8F	STMicroelectronics	STANDARD SRAM	COMMERCIAL EXTENDED	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel			2MX16	2M		-30 Cel		BOTTOM	R-PBGA-B48		1.95 V	1.2 mm	6 mm	Not Qualified	33554432 bit	1.65 V						8 mm	70 ns
M69AR024BL70ZB8T	STMicroelectronics	STANDARD SRAM	COMMERCIAL EXTENDED	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	20 mA	1048576 words	COMMON	1.8	1.8/2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel		3-STATE	1MX16	1M		-30 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B48		2.25 V	1.2 mm	6 mm	Not Qualified	16777216 bit	1.7 V		e1			.00001 Amp	8 mm	70 ns
M69AR048BL70ZB8T	STMicroelectronics	STANDARD SRAM	COMMERCIAL EXTENDED	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel			2MX16	2M		-30 Cel		BOTTOM	R-PBGA-B48		1.95 V	1.2 mm	6 mm	Not Qualified	33554432 bit	1.65 V						8 mm	70 ns
M69AR048BL70ZB8E	STMicroelectronics	STANDARD SRAM	COMMERCIAL EXTENDED	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel			2MX16	2M		-30 Cel		BOTTOM	R-PBGA-B48		1.95 V	1.2 mm	6 mm	Not Qualified	33554432 bit	1.65 V						8 mm	70 ns
M69AW048BL70ZB8F	STMicroelectronics	STANDARD SRAM	COMMERCIAL EXTENDED	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	3	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel		3-STATE	2MX16	2M		-30 Cel		BOTTOM	R-PBGA-B48		3.3 V	1.2 mm	6 mm	Not Qualified	33554432 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	.00001 Amp	8 mm	70 ns
M69AR024BL80ZB8T	STMicroelectronics	STANDARD SRAM	COMMERCIAL EXTENDED	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	20 mA	1048576 words	COMMON	1.8	1.8/2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel		3-STATE	1MX16	1M		-30 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B48		2.25 V	1.2 mm	6 mm	Not Qualified	16777216 bit	1.7 V		e1			.00001 Amp	8 mm	80 ns
M69AW048BL70ZB8	STMicroelectronics	STANDARD SRAM	COMMERCIAL EXTENDED	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	3	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel		3-STATE	2MX16	2M		-30 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.3 V	1.2 mm	6 mm	Not Qualified	33554432 bit	2.7 V		e0			.00001 Amp	8 mm	70 ns
M69KM096AACW8	STMicroelectronics	PSEUDO STATIC RAM	COMMERCIAL EXTENDED		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	4194304 words	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	Other Memory ICs		85 Cel		3-STATE	4MX16	4M		-30 Cel		UPPER	X-XUUC-N		1.95 V			Not Qualified	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE ALSO POSSIBLE				.00001 Amp		70 ns
M69AR048BL85ZB8	STMicroelectronics	STANDARD SRAM	COMMERCIAL EXTENDED	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	25 mA	2097152 words	COMMON	1.8	2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel		3-STATE	2MX16	2M		-30 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		1.95 V	1.2 mm	6 mm	Not Qualified	33554432 bit	1.65 V		e0			.00001 Amp	8 mm	85 ns
M69AR024BL70ZB8E	STMicroelectronics	STANDARD SRAM	COMMERCIAL EXTENDED	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		1048576 words		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel			1MX16	1M		-30 Cel		BOTTOM	R-PBGA-B48		2.25 V	1.2 mm	6 mm	Not Qualified	16777216 bit	1.7 V						8 mm	70 ns
M69KM048AACW8	STMicroelectronics	PSEUDO STATIC RAM	COMMERCIAL EXTENDED		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS	40 mA	2097152 words	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	Other Memory ICs		85 Cel		3-STATE	2MX16	2M		-30 Cel		UPPER	X-XUUC-N		1.95 V			Not Qualified	33554432 bit	1.7 V					.00007 Amp		70 ns
M69AR024BL70ZB8F	STMicroelectronics	STANDARD SRAM	COMMERCIAL EXTENDED	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		1048576 words		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel			1MX16	1M		-30 Cel		BOTTOM	R-PBGA-B48		2.25 V	1.2 mm	6 mm	Not Qualified	16777216 bit	1.7 V						8 mm	70 ns
M69AW048BL70ZB8E	STMicroelectronics	STANDARD SRAM	COMMERCIAL EXTENDED	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	3	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel		3-STATE	2MX16	2M		-30 Cel		BOTTOM	R-PBGA-B48		3.3 V	1.2 mm	6 mm	Not Qualified	33554432 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	.00001 Amp	8 mm	70 ns
M69AR048BL80ZB8	STMicroelectronics	STANDARD SRAM	COMMERCIAL EXTENDED	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	25 mA	2097152 words	COMMON	1.8	2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel		3-STATE	2MX16	2M		-30 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		1.95 V	1.2 mm	6 mm	Not Qualified	33554432 bit	1.65 V		e0			.00001 Amp	8 mm	80 ns
M69AW048BL70ZB8T	STMicroelectronics	STANDARD SRAM	COMMERCIAL EXTENDED	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	3	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel		3-STATE	2MX16	2M		-30 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.3 V	1.2 mm	6 mm	Not Qualified	33554432 bit	2.7 V		e0			.00001 Amp	8 mm	70 ns
HD74LS170FP	Renesas Electronics	STANDARD SRAM	COMMERCIAL EXTENDED	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	TTL		GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5		4	SMALL OUTLINE			1.27 mm	75 Cel			4X4	4		-20 Cel		DUAL	R-PDSO-G16		5.25 V	2.2 mm	5.5 mm	Not Qualified	16 bit	4.75 V						10.06 mm	45 ns
UPB10474D-15	Renesas Electronics	STANDARD SRAM	COMMERCIAL EXTENDED	24	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	ECL	-5.2 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	SEPARATE		-5.2	4	IN-LINE	DIP24,.4	SRAMs	2.54 mm	75 Cel		OPEN-EMITTER	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-CDIP-T24					Not Qualified	4096 bit			e0					15 ns
UPB10480B-10	Renesas Electronics	STANDARD SRAM	COMMERCIAL EXTENDED	20	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	ECL	-5.2 V	FLAT	PARALLEL	ASYNCHRONOUS		16384 words	SEPARATE		-5.2	1	FLATPACK	FL20,.3	SRAMs	1.27 mm	75 Cel		OPEN-EMITTER	16KX1	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-CDFP-F20					Not Qualified	16384 bit			e0					10 ns
UPB10480B-15	Renesas Electronics	STANDARD SRAM	COMMERCIAL EXTENDED	20	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	ECL	-5.2 V	FLAT	PARALLEL	ASYNCHRONOUS		16384 words	SEPARATE		-5.2	1	FLATPACK	FL20,.3	SRAMs	1.27 mm	75 Cel		OPEN-EMITTER	16KX1	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-CDFP-F20					Not Qualified	16384 bit			e0					15 ns
UPB10474D-10	Renesas Electronics	STANDARD SRAM	COMMERCIAL EXTENDED	24	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	ECL	-5.2 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	SEPARATE		-5.2	4	IN-LINE	DIP24,.4	SRAMs	2.54 mm	75 Cel		OPEN-EMITTER	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-CDIP-T24					Not Qualified	4096 bit			e0					10 ns
HD74LS170FP-EL	Renesas Electronics	STANDARD SRAM	COMMERCIAL EXTENDED	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		4 words		5		4	SMALL OUTLINE			1.27 mm	75 Cel			4X4	4		-20 Cel		DUAL	R-PDSO-G16		5.25 V	2.2 mm	5.5 mm	Not Qualified	16 bit	4.75 V						10.06 mm
UPB10A484BH-7	Renesas Electronics	STANDARD SRAM	COMMERCIAL EXTENDED	28	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	ECL	-5.2 V	FLAT	PARALLEL	ASYNCHRONOUS	320 mA	4096 words	SEPARATE		-5.2	4	FLATPACK	FL28,.4	SRAMs	1.27 mm	75 Cel		OPEN-EMITTER	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-CDFP-F28					Not Qualified	16384 bit			e0					7 ns
UPB10480D-10	Renesas Electronics	STANDARD SRAM	COMMERCIAL EXTENDED	20	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	ECL	-5.2 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words	SEPARATE		-5.2	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	75 Cel		OPEN-EMITTER	16KX1	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-CDIP-T20					Not Qualified	16384 bit			e0					10 ns
UPB10480D-15	Renesas Electronics	STANDARD SRAM	COMMERCIAL EXTENDED	20	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	ECL	-5.2 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words	SEPARATE		-5.2	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	75 Cel		OPEN-EMITTER	16KX1	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-CDIP-T20					Not Qualified	16384 bit			e0					15 ns
HD74LS670P	Renesas Electronics	STANDARD SRAM	COMMERCIAL EXTENDED	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words		5	5	4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	75 Cel			4X4	4		-20 Cel		DUAL	R-PDIP-T16		5.25 V	5.06 mm	7.62 mm	Not Qualified	16 bit	4.75 V						19.2 mm	45 ns
UPB10A484BH-5	Renesas Electronics	STANDARD SRAM	COMMERCIAL EXTENDED	28	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	ECL	-5.2 V	FLAT	PARALLEL	ASYNCHRONOUS	320 mA	4096 words	SEPARATE		-5.2	4	FLATPACK	FL28,.4	SRAMs	1.27 mm	75 Cel		OPEN-EMITTER	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-CDFP-F28					Not Qualified	16384 bit			e0					5 ns
UPB10474D-8	Renesas Electronics	STANDARD SRAM	COMMERCIAL EXTENDED	24	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	ECL	-5.2 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	SEPARATE		-5.2	4	IN-LINE	DIP24,.4	SRAMs	2.54 mm	75 Cel		OPEN-EMITTER	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-CDIP-T24					Not Qualified	4096 bit			e0					8 ns
HD74LS170RP	Renesas Electronics	STANDARD SRAM	COMMERCIAL EXTENDED	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	TTL		GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5		4	SMALL OUTLINE			1.27 mm	75 Cel			4X4	4		-20 Cel		DUAL	R-PDSO-G16		5.25 V	1.75 mm	3.9 mm	Not Qualified	16 bit	4.75 V						9.9 mm	45 ns
HD74LS670RP	Renesas Electronics	STANDARD SRAM	COMMERCIAL EXTENDED	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5		4	SMALL OUTLINE			1.27 mm	75 Cel			4X4	4		-20 Cel		DUAL	R-PDSO-G16		5.25 V	1.75 mm	3.9 mm	Not Qualified	16 bit	4.75 V						9.9 mm	45 ns
HD74LS670FP-E	Renesas Electronics	STANDARD SRAM	COMMERCIAL EXTENDED	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5		4	SMALL OUTLINE			1.27 mm	75 Cel			4X4	4		-20 Cel	TIN BISMUTH	DUAL	R-PDSO-G16	1	5.25 V	2.2 mm	5.5 mm	Not Qualified	16 bit	4.75 V		e6				10.06 mm	45 ns
HD74LS170RP-EL	Renesas Electronics	STANDARD SRAM	COMMERCIAL EXTENDED	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		4 words		5		4	SMALL OUTLINE			1.27 mm	75 Cel			4X4	4		-20 Cel		DUAL	R-PDSO-G16		5.25 V	1.75 mm	3.9 mm	Not Qualified	16 bit	4.75 V						9.9 mm
UPB10A484D-7	Renesas Electronics	STANDARD SRAM	COMMERCIAL EXTENDED	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	ECL	-5.2 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	320 mA	4096 words	SEPARATE		-5.2	4	IN-LINE	DIP28,.4	SRAMs	2.54 mm	75 Cel		OPEN-EMITTER	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-CDIP-T28					Not Qualified	16384 bit			e0					7 ns
HD74LS170P	Renesas Electronics	STANDARD SRAM	COMMERCIAL EXTENDED	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words		5	5	4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	75 Cel			4X4	4		-20 Cel		DUAL	R-PDIP-T16		5.25 V	5.06 mm	7.62 mm	Not Qualified	16 bit	4.75 V						19.2 mm	45 ns
UPB10A484D-5	Renesas Electronics	STANDARD SRAM	COMMERCIAL EXTENDED	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	ECL	-5.2 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	320 mA	4096 words	SEPARATE		-5.2	4	IN-LINE	DIP28,.4	SRAMs	2.54 mm	75 Cel		OPEN-EMITTER	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-CDIP-T28					Not Qualified	16384 bit			e0					5 ns
HD74LS670FP	Renesas Electronics	STANDARD SRAM	COMMERCIAL EXTENDED	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5		4	SMALL OUTLINE			1.27 mm	75 Cel			4X4	4		-20 Cel	TIN LEAD	DUAL	R-PDSO-G16		5.25 V	2.2 mm	5.5 mm	Not Qualified	16 bit	4.75 V		e0				10.06 mm	45 ns
UPD442000AGU-BC10X-9KH-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL EXTENDED	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON		2.5/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel	YES	3-STATE	256KX8	256K	1 V	-25 Cel	TIN BISMUTH	DUAL	R-PDSO-G32		3.6 V	1.2 mm	8 mm	Not Qualified	2097152 bit	2.2 V		e6				11.8 mm	100 ns
UPD43256BGW-B15X-9JL-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL EXTENDED	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	32768 words	COMMON	3.3	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel		3-STATE	32KX8	32K	2 V	-25 Cel	TIN BISMUTH	DUAL	R-PDSO-G28		5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	2.7 V		e6				11.8 mm	150 ns
UPD442012AGY-BC10X-MJH-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL EXTENDED	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON		2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.71,20	SRAMs	.5 mm	85 Cel		3-STATE	128KX16	128K	1 V	-25 Cel	TIN BISMUTH	DUAL	R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified	2097152 bit	2.2 V		e6				18 mm	100 ns
UPD43256BGW-B10X-9KL-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL EXTENDED	28	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	32768 words	COMMON	3.3	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel	YES	3-STATE	32KX8	32K	2 V	-25 Cel	TIN BISMUTH	DUAL	R-PDSO-G28		5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	2.7 V		e6				11.8 mm	100 ns
UPD442000AGU-DD85X-9JH-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL EXTENDED	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	262144 words	COMMON	2	2	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel		3-STATE	256KX8	256K	1 V	-25 Cel	TIN BISMUTH	DUAL	R-PDSO-G32		2.2 V	1.2 mm	8 mm	Not Qualified	2097152 bit	1.8 V		e6				11.8 mm	85 ns
UPD43256BGW-A12X-9KL-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL EXTENDED	28	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	32768 words	COMMON	3.3	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel	YES	3-STATE	32KX8	32K	2 V	-25 Cel	TIN BISMUTH	DUAL	R-PDSO-G28		5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	3 V		e6				11.8 mm	120 ns
UPD43256BGW-B12X-9JL-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL EXTENDED	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	32768 words	COMMON	3.3	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel		3-STATE	32KX8	32K	2 V	-25 Cel	TIN BISMUTH	DUAL	R-PDSO-G28		5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	2.7 V		e6				11.8 mm	120 ns
UPD442000AGU-BC85X-9KH-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL EXTENDED	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON		2.5/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel	YES	3-STATE	256KX8	256K	1 V	-25 Cel	TIN BISMUTH	DUAL	R-PDSO-G32		3.6 V	1.2 mm	8 mm	Not Qualified	2097152 bit	2.2 V		e6				11.8 mm	85 ns
UPD43256BGW-B12X-9KL-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL EXTENDED	28	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	32768 words	COMMON	3.3	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel	YES	3-STATE	32KX8	32K	2 V	-25 Cel	TIN BISMUTH	DUAL	R-PDSO-G28		5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	2.7 V		e6				11.8 mm	120 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.