Diodes Incorporated SRAM 12

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Qualification	Memory Density	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Maximum Access Time
AP3983CP7-G1	Diodes Incorporated	STANDARD SRAM																											MATTE TIN						e3		260
AP3983DP7-G1	Diodes Incorporated	STANDARD SRAM																											MATTE TIN						e3	30	260
AP3983BMTR-G1	Diodes Incorporated	STANDARD SRAM																											MATTE TIN			1			e3	30	260
AP3983CMTR-G1	Diodes Incorporated	STANDARD SRAM																											MATTE TIN						e3		260
PI2C2589-35P	Diodes Incorporated	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	PARALLEL	SYNCHRONOUS	200 mA	32768 words	COMMON	5	5	9	IN-LINE	DIP32,.3	SRAMs	2.54 mm	70 Cel	3-STATE	32KX9	32K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T32		Not Qualified	294912 bit	e0			.13 Amp	34 ns
PI2C2589-25P	Diodes Incorporated	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	PARALLEL	SYNCHRONOUS	220 mA	32768 words	COMMON	5	5	9	IN-LINE	DIP32,.3	SRAMs	2.54 mm	70 Cel	3-STATE	32KX9	32K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T32		Not Qualified	294912 bit	e0			.13 Amp	24 ns
PI2C2589-15J	Diodes Incorporated	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	PARALLEL	SYNCHRONOUS	260 mA	32768 words	COMMON	5	5	9	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J32		Not Qualified	294912 bit	e0			.15 Amp	14 ns
PI2C2589-20P	Diodes Incorporated	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	PARALLEL	SYNCHRONOUS	240 mA	32768 words	COMMON	5	5	9	IN-LINE	DIP32,.3	SRAMs	2.54 mm	70 Cel	3-STATE	32KX9	32K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T32		Not Qualified	294912 bit	e0			.13 Amp	19 ns
PI2C2589-25J	Diodes Incorporated	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	PARALLEL	SYNCHRONOUS	220 mA	32768 words	COMMON	5	5	9	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J32		Not Qualified	294912 bit	e0			.13 Amp	24 ns
PI2C2589-20J	Diodes Incorporated	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	PARALLEL	SYNCHRONOUS	240 mA	32768 words	COMMON	5	5	9	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J32		Not Qualified	294912 bit	e0			.13 Amp	19 ns
PI2C2589-35J	Diodes Incorporated	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	PARALLEL	SYNCHRONOUS	200 mA	32768 words	COMMON	5	5	9	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J32		Not Qualified	294912 bit	e0			.13 Amp	34 ns
PI2C2589-15P	Diodes Incorporated	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	PARALLEL	SYNCHRONOUS	260 mA	32768 words	COMMON	5	5	9	IN-LINE	DIP32,.3	SRAMs	2.54 mm	70 Cel	3-STATE	32KX9	32K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T32		Not Qualified	294912 bit	e0			.15 Amp	14 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.