Intel SRAM 4

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

D2001

Intel

NON-VOLATILE SRAM

COMMERCIAL

18

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

128 words

8

IN-LINE

DIP18,.3

SRAMs

2.54 mm

70 Cel

128X8

128

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T18

Not Qualified

1024 bit

e0

300 ns

D2141L-3

Intel

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

40 mA

4096 words

SEPARATE

5

5

1

IN-LINE

DIP18,.3

SRAMs

2.54 mm

70 Cel

3-STATE

4KX1

4K

4.5 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T18

Not Qualified

4096 bit

e0

150 ns

D2142-2

Intel

STANDARD SRAM

COMMERCIAL

20

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1024 words

COMMON

4

IN-LINE

DIP20,.3

SRAMs

2.54 mm

70 Cel

3-STATE

1KX4

1K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T20

Not Qualified

4096 bit

e0

200 ns

P5164SL-10

Intel

STANDARD SRAM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

70 mA

8192 words

COMMON

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

70 Cel

3-STATE

8KX8

8K

2 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T28

5.5 V

4.44 mm

15.24 mm

Not Qualified

65536 bit

4.5 V

LG-MAX, SEATED HT-CALCULATED

e0

.00005 Amp

37.2 mm

100 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.