Renesas Electronics SRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

R1LV3216RSA-5SI#S1

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2097152 words

3

16

SMALL OUTLINE, THIN PROFILE

8

85 Cel

2MX16

2M

-40 Cel

DUAL

R-PDSO-G48

3

3.6 V

33554432 bit

2.7 V

55 ns

70V06L15PFG

Renesas Electronics

DUAL-PORT SRAM

COMMERCIAL

64

LQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

185 mA

16384 words

COMMON

3.3

3.3

8

FLATPACK, LOW PROFILE

QFP64,.66SQ,32

SRAMs

.8 mm

70 Cel

3-STATE

16KX8

16K

2 V

0 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQFP-G64

3

3.6 V

1.6 mm

14 mm

Not Qualified

131072 bit

3 V

e3

30

260

.0025 Amp

14 mm

15 ns

7133LA20JG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

68

QCCJ

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

280 mA

2048 words

COMMON

5

5

16

CHIP CARRIER

LDCC68,1.0SQ

SRAMs

1.27 mm

70 Cel

3-STATE

2KX16

2K

2 V

0 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQCC-J68

1

5.5 V

4.572 mm

24.2062 mm

Not Qualified

32768 bit

4.5 V

AUTOMATIC POWER-DOWN

e3

30

260

.0015 Amp

24.2062 mm

20 ns

71V016SA10PHGI

Renesas Electronics

STANDARD SRAM

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

170 mA

65536 words

COMMON

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

.8 mm

85 Cel

3-STATE

64KX16

64K

3.15 V

-40 Cel

Matte Tin (Sn) - annealed

DUAL

1

R-PDSO-G44

3

3.6 V

1.2 mm

10.16 mm

1048576 bit

3.15 V

e3

30

260

YES

.01 Amp

18.41 mm

10 ns

IDT7007L20PFGI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

80

LQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

315 mA

32768 words

COMMON

5

5

8

FLATPACK, LOW PROFILE

PGA68,11X11

SRAMs

.65 mm

85 Cel

3-STATE

32KX8

32K

4.5 V

-40 Cel

MATTE TIN

QUAD

2

S-PQFP-G80

3

5.5 V

1.6 mm

14 mm

Not Qualified

262144 bit

4.5 V

e3

.01 Amp

14 mm

20 ns

IDT7027L20PFGI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

335 mA

32768 words

COMMON

5

5

16

FLATPACK, LOW PROFILE, FINE PITCH

QFP100,.63SQ,20

SRAMs

.5 mm

85 Cel

3-STATE

32KX16

32K

4.5 V

-40 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQFP-G100

3

5.5 V

1.6 mm

14 mm

Not Qualified

524288 bit

4.5 V

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE

e3

30

260

.01 Amp

14 mm

20 ns

IDT71V256SA15PZG

Renesas Electronics

CACHE SRAM

COMMERCIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

85 mA

32768 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

SRAMs

.55 mm

70 Cel

3-STATE

32KX8

32K

3 V

0 Cel

MATTE TIN

DUAL

1

R-PDSO-G28

3

3.6 V

1.2 mm

8 mm

Not Qualified

262144 bit

3 V

e3

YES

.002 Amp

11.8 mm

15 ns

IDT71V416L12PHGI

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

180 mA

262144 words

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

85 Cel

3-STATE

256KX16

256K

3 V

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G44

3

3.6 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e3

30

260

.01 Amp

18.41 mm

12 ns

70V08L15PFG8

Renesas Electronics

DUAL-PORT SRAM

COMMERCIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

65536 words

3.3

8

FLATPACK, LOW PROFILE, FINE PITCH

.5 mm

70 Cel

64KX8

64K

0 Cel

MATTE TIN

QUAD

S-PQFP-G100

3

3.6 V

1.6 mm

14 mm

524288 bit

3 V

e3

260

14 mm

15 ns

IDT7024L55PFG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

210 mA

4096 words

COMMON

5

5

16

FLATPACK, LOW PROFILE, FINE PITCH

QFP100,.63SQ,20

SRAMs

.5 mm

70 Cel

3-STATE

4KX16

4K

2 V

0 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQFP-G100

3

5.5 V

1.6 mm

14 mm

Not Qualified

65536 bit

4.5 V

e3

30

260

.0015 Amp

14 mm

55 ns

7140SA100JI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

52

QCCJ

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

190 mA

1024 words

COMMON

5

5

8

CHIP CARRIER

LDCC52,.8SQ

SRAMs

1.27 mm

85 Cel

3-STATE

1KX8

1K

4.5 V

-40 Cel

TIN LEAD

QUAD

2

S-PQCC-J52

1

5.5 V

4.57 mm

19.1262 mm

Not Qualified

8192 bit

4.5 V

e0

20

225

.03 Amp

19.1262 mm

100 ns

7133SA55GGI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

68

PGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

315 mA

2048 words

5

16

GRID ARRAY

2.54 mm

85 Cel

2KX16

2K

-40 Cel

PERPENDICULAR

S-CPGA-P68

5.5 V

29.464 mm

32768 bit

4.5 V

29.464 mm

55 ns

7140SA55PB

Renesas Electronics

MULTI-PORT SRAM

MILITARY

48

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

MIL-PRF-38535

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

190 mA

1024 words

COMMON

5

5

8

IN-LINE

DIP48,.6

SRAMs

2.54 mm

125 Cel

3-STATE

1KX8

1K

4.5 V

-55 Cel

TIN LEAD

DUAL

2

R-PDIP-T48

5.5 V

5.08 mm

15.24 mm

Not Qualified

8192 bit

4.5 V

e0

.03 Amp

61.849 mm

55 ns

71016S20YG8

Renesas Electronics

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

170 mA

65536 words

COMMON

5

5

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

70 Cel

3-STATE

64KX16

64K

4.5 V

0 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-J44

3

5.5 V

3.683 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e3

40

260

.01 Amp

28.575 mm

20 ns

7140SA25PDGB8

Renesas Electronics

MULTI-PORT SRAM

MILITARY

48

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

280 mA

1024 words

COMMON

5

5

8

IN-LINE

DIP48,.6

SRAMs

2.54 mm

125 Cel

3-STATE

1KX8

1K

4.5 V

-55 Cel

MATTE TIN

DUAL

2

R-PDIP-T48

Not Qualified

8192 bit

e3

.03 Amp

25 ns

7140SA55FI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

48

QFF

SQUARE

CERAMIC

YES

CMOS

FLAT

PARALLEL

ASYNCHRONOUS

190 mA

1024 words

COMMON

5

5

8

FLATPACK

QFL48,.75SQ

SRAMs

1.27 mm

85 Cel

3-STATE

1KX8

1K

4.5 V

-40 Cel

TIN LEAD

QUAD

2

S-XQFP-F48

Not Qualified

8192 bit

e0

.03 Amp

55 ns

7142SA35CGB

Renesas Electronics

MULTI-PORT SRAM

MILITARY

48

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

MIL-PRF-38535

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

230 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP48,.6

SRAMs

2.54 mm

125 Cel

3-STATE

2KX8

2K

4.5 V

-55 Cel

MATTE TIN

DUAL

2

R-PDIP-T48

5.5 V

4.826 mm

15.24 mm

Not Qualified

16384 bit

4.5 V

AUTOMATIC POWER DOWN

e3

.03 Amp

60.96 mm

35 ns

7133LA90PFGB8

Renesas Electronics

MULTI-PORT SRAM

MILITARY

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

MIL-PRF-38535

GULL WING

PARALLEL

ASYNCHRONOUS

280 mA

2048 words

5

16

FLATPACK

.5 mm

125 Cel

2KX16

2K

-55 Cel

QUAD

S-PQFP-G100

5.5 V

14 mm

32768 bit

4.5 V

14 mm

90 ns

7140LA55TFGI8

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

64

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

140 mA

1024 words

COMMON

5

5

8

FLATPACK

QFP64,.47SQ,20

SRAMs

.5 mm

85 Cel

3-STATE

1KX8

1K

2 V

-40 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQFP-G64

3

5.5 V

Not Qualified

8192 bit

4.5 V

e3

30

260

.004 Amp

55 ns

7140SA25PDGB

Renesas Electronics

MULTI-PORT SRAM

MILITARY

48

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

MIL-PRF-38535

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

280 mA

1024 words

COMMON

5

5

8

IN-LINE

DIP48,.6

SRAMs

2.54 mm

125 Cel

3-STATE

1KX8

1K

4.5 V

-55 Cel

MATTE TIN

DUAL

2

R-PDIP-T48

1

5.5 V

Not Qualified

8192 bit

4.5 V

e3

.03 Amp

25 ns

7140SA35TFGB

Renesas Electronics

MULTI-PORT SRAM

MILITARY

64

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

MIL-PRF-38535 Class Q

GULL WING

PARALLEL

ASYNCHRONOUS

230 mA

1024 words

COMMON

5

5

8

FLATPACK

QFP64,.47SQ,20

SRAMs

.5 mm

125 Cel

3-STATE

1KX8

1K

4.5 V

-55 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQFP-G64

3

5.5 V

Not Qualified

8192 bit

4.5 V

e3

30

260

.03 Amp

35 ns

7140LA55PG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

48

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1024 words

5

8

IN-LINE

2.54 mm

70 Cel

1KX8

1K

0 Cel

MATTE TIN

DUAL

R-PDIP-T48

5.5 V

5.08 mm

15.24 mm

Not Qualified

8192 bit

4.5 V

e3

61.849 mm

55 ns

7142LA55L48G8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

48

QCCN

SQUARE

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

250 mA

2048 words

5

8

CHIP CARRIER

1.27 mm

70 Cel

2KX8

2K

0 Cel

MATTE TIN

QUAD

S-XQCC-N48

5.5 V

14.3002 mm

16384 bit

4.5 V

e3

14.3002 mm

55 ns

7133SA70JG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

68

QCCN

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

280 mA

2048 words

5

16

CHIP CARRIER

70 Cel

2KX16

2K

0 Cel

QUAD

S-PQCC-N68

5.5 V

32768 bit

4.5 V

70 ns

7140LA35PFB

Renesas Electronics

MULTI-PORT SRAM

MILITARY

64

LQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

MIL-PRF-38535

GULL WING

PARALLEL

ASYNCHRONOUS

170 mA

1024 words

COMMON

5

5

8

FLATPACK, LOW PROFILE

QFP64,.66SQ,32

SRAMs

.8 mm

125 Cel

3-STATE

1KX8

1K

2 V

-55 Cel

TIN LEAD

QUAD

2

S-PQFP-G64

3

5.5 V

1.6 mm

14 mm

Not Qualified

8192 bit

4.5 V

e0

30

240

.004 Amp

14 mm

35 ns

7133SA25GGI8

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

68

PGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

330 mA

2048 words

5

16

GRID ARRAY

2.54 mm

85 Cel

2KX16

2K

-40 Cel

PERPENDICULAR

S-CPGA-P68

5.5 V

29.464 mm

32768 bit

4.5 V

29.464 mm

25 ns

7140SA25CG8

Renesas Electronics

7142LA20PDG

Renesas Electronics

7140LA100L48I8

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

48

QCCN

SQUARE

CERAMIC

YES

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

140 mA

1024 words

COMMON

5

5

8

CHIP CARRIER

LCC48,.56SQ,40

SRAMs

1 mm

85 Cel

3-STATE

1KX8

1K

2 V

-40 Cel

TIN LEAD

QUAD

2

S-XQCC-N48

Not Qualified

8192 bit

e0

.004 Amp

100 ns

71421SA20PFG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

64

LQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

250 mA

2048 words

COMMON

5

5

8

FLATPACK, LOW PROFILE

QFP64,.66SQ,32

SRAMs

.8 mm

70 Cel

3-STATE

2KX8

2K

4.5 V

0 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQFP-G64

3

5.5 V

1.6 mm

14 mm

Not Qualified

16384 bit

4.5 V

e3

30

260

.015 Amp

14 mm

20 ns

7140LA100PGI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

48

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1024 words

5

8

IN-LINE

2.54 mm

85 Cel

1KX8

1K

-40 Cel

MATTE TIN

DUAL

R-PDIP-T48

5.5 V

5.08 mm

15.24 mm

Not Qualified

8192 bit

4.5 V

e3

61.849 mm

100 ns

7142SA55PDGB8

Renesas Electronics

MULTI-PORT SRAM

48

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

MIL-PRF-38535

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

190 mA

2048 words

COMMON

5

8

IN-LINE

DIP48,.6

2.54 mm

125 Cel

2KX8

2K

2 V

-55 Cel

DUAL

2

R-PDIP-T48

5.5 V

3.8 mm

15.24 mm

16384 bit

4.5 V

YES

.1 Amp

61.7 mm

55 ns

7140SA25L48G

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

48

QCCN

SQUARE

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

220 mA

1024 words

COMMON

5

5

8

CHIP CARRIER

LCC48,.56SQ,40

SRAMs

1 mm

70 Cel

3-STATE

1KX8

1K

4.5 V

0 Cel

MATTE TIN

QUAD

2

S-XQCC-N48

5.5 V

14.3002 mm

Not Qualified

8192 bit

4.5 V

e3

.015 Amp

14.3002 mm

25 ns

7140LA100TFI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

64

QFP

SQUARE

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

140 mA

1024 words

COMMON

5

5

8

FLATPACK

QFP64,.47SQ,20

SRAMs

.5 mm

85 Cel

3-STATE

1KX8

1K

2 V

-40 Cel

TIN LEAD

QUAD

2

S-PQFP-G64

3

Not Qualified

8192 bit

e0

30

240

.004 Amp

100 ns

7140LA100LG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

48

QCCN

SQUARE

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

110 mA

1024 words

5

8

CHIP CARRIER

1.27 mm

70 Cel

1KX8

1K

0 Cel

QUAD

S-XQCC-N48

5.5 V

14.3002 mm

8192 bit

4.5 V

14.3002 mm

100 ns

7140LA20PFG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

64

LQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

200 mA

1024 words

COMMON

5

5

8

FLATPACK, LOW PROFILE

QFP64,.66SQ,32

SRAMs

.8 mm

70 Cel

3-STATE

1KX8

1K

2 V

0 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQFP-G64

3

5.5 V

1.6 mm

14 mm

Not Qualified

8192 bit

4.5 V

e3

30

260

.0015 Amp

14 mm

20 ns

7142LA25L48GI8

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

48

QCCN

SQUARE

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

300 mA

2048 words

5

8

CHIP CARRIER

1.27 mm

85 Cel

2KX8

2K

-40 Cel

MATTE TIN

QUAD

S-XQCC-N48

5.5 V

14.3002 mm

16384 bit

4.5 V

e3

14.3002 mm

25 ns

7142LA55CG8

Renesas Electronics

MULTI-PORT SRAM

48

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

110 mA

2048 words

COMMON

5

8

IN-LINE

DIP48,.6

2.54 mm

70 Cel

2KX8

2K

2 V

0 Cel

DUAL

2

R-CDIP-T48

5.5 V

3.3 mm

15.24 mm

16384 bit

4.5 V

YES

.07 Amp

61.72 mm

55 ns

7142LA35L48GB

Renesas Electronics

MULTI-PORT SRAM

MILITARY

48

QCCN

SQUARE

UNSPECIFIED

YES

1

CMOS

MIL-PRF-38535 Class Q

NO LEAD

PARALLEL

ASYNCHRONOUS

170 mA

2048 words

COMMON

5

5

8

CHIP CARRIER

LCC48,.56SQ,40

SRAMs

1 mm

125 Cel

3-STATE

2KX8

2K

2 V

-55 Cel

MATTE TIN

QUAD

2

S-XQCC-N48

5.5 V

14.3002 mm

Not Qualified

16384 bit

4.5 V

e3

.004 Amp

14.3002 mm

35 ns

7140LA25L48GI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

48

QCCN

SQUARE

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

220 mA

1024 words

COMMON

5

5

8

CHIP CARRIER

LCC48,.56SQ,40

SRAMs

1 mm

85 Cel

3-STATE

1KX8

1K

2 V

-40 Cel

MATTE TIN

QUAD

2

S-XQCC-N48

5.5 V

14.3002 mm

Not Qualified

8192 bit

4.5 V

e3

.004 Amp

14.3002 mm

25 ns

7142SA55CGB

Renesas Electronics

MULTI-PORT SRAM

MILITARY

48

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

MIL-PRF-38535

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

190 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP48,.6

SRAMs

2.54 mm

125 Cel

3-STATE

2KX8

2K

4.5 V

-55 Cel

MATTE TIN

DUAL

2

R-PDIP-T48

5.5 V

4.826 mm

15.24 mm

Not Qualified

16384 bit

4.5 V

AUTOMATIC POWER DOWN

e3

.03 Amp

60.96 mm

55 ns

7140LA100L48I

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

48

QCCN

SQUARE

CERAMIC

YES

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

140 mA

1024 words

COMMON

5

5

8

CHIP CARRIER

LCC48,.56SQ,40

SRAMs

1 mm

85 Cel

3-STATE

1KX8

1K

2 V

-40 Cel

TIN LEAD

QUAD

2

S-XQCC-N48

Not Qualified

8192 bit

e0

.004 Amp

100 ns

71421LA55PPG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

52

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2048 words

5

8

FLATPACK

70 Cel

2KX8

2K

0 Cel

QUAD

S-PQFP-G52

5.5 V

16384 bit

4.5 V

55 ns

7133SA70PFGB8

Renesas Electronics

MULTI-PORT SRAM

MILITARY

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

MIL-PRF-38535

GULL WING

PARALLEL

ASYNCHRONOUS

310 mA

2048 words

5

16

FLATPACK

.5 mm

125 Cel

2KX16

2K

-55 Cel

QUAD

S-PQFP-G100

5.5 V

14 mm

32768 bit

4.5 V

14 mm

70 ns

71421SA20PPG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

52

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2048 words

5

8

FLATPACK

70 Cel

2KX8

2K

0 Cel

QUAD

S-PQFP-G52

5.5 V

16384 bit

4.5 V

20 ns

7142SA25JGI8

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

52

QCCN

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

330 mA

2048 words

5

8

CHIP CARRIER

1.27 mm

85 Cel

2KX8

2K

-40 Cel

MATTE TIN

QUAD

S-PQCC-N52

5.5 V

4.572 mm

19.1262 mm

16384 bit

4.5 V

AUTOMATIC POWER DOWN

e3

19.1262 mm

25 ns

71016NS12PHI

Renesas Electronics

APPLICATION SPECIFIC SRAM

INDUSTRIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

210 mA

65536 words

COMMON

5

5

16

SMALL OUTLINE

TSOP44,.46,32

SRAMs

.8 mm

85 Cel

3-STATE

64KX16

64K

4.5 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-G44

5.5 V

Not Qualified

1048576 bit

4.5 V

e0

.01 Amp

12 ns

7140LA100LG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

48

QCCN

SQUARE

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

110 mA

1024 words

5

8

CHIP CARRIER

1.27 mm

70 Cel

1KX8

1K

0 Cel

QUAD

S-XQCC-N48

5.5 V

14.3002 mm

8192 bit

4.5 V

14.3002 mm

100 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.