Samsung SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
K7D803671B-HC30	Samsung	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	670 mA	262144 words	COMMON	2.5	1.5,2.5	36	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel		3-STATE	256KX36	256K	2.37 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B153		2.63 V	2.21 mm	300 MHz	14 mm	Not Qualified	9437184 bit	2.37 V	PIPELINED ARCHITECTURE	e0			.15 Amp	22 mm	.2 ns
KM6161000BLTI-7L	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	64KX16	64K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G44		5.5 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e0		YES	.00002 Amp	18.41 mm	70 ns
KM62256BLG-10	Samsung	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28		5.5 V	3 mm		8.38 mm	Not Qualified	262144 bit	4.5 V		e0		YES	.00005 Amp	18.29 mm	100 ns
KM62256DLG-5L	Samsung	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28		5.5 V	3 mm		8.38 mm	Not Qualified	262144 bit	4.5 V		e0			.000003 Amp	18.29 mm	55 ns
KM64258BJ-15	Samsung	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	65536 words	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	64KX4	64K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		5.5 V	3.76 mm		7.62 mm	Not Qualified	262144 bit	4.5 V		e0		YES	.002 Amp	18.42 mm	15 ns
KM64258CJ-15	Samsung	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	65536 words	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	64KX4	64K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		5.5 V	3.76 mm		7.62 mm	Not Qualified	262144 bit	4.5 V	TTL COMPATIBLE INPUTS/OUTPUTS/3.3V GTL COMPATIBLE I/O	e0		YES	.002 Amp	18.42 mm	15 ns
KM681000BLG-7L	Samsung	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	3 mm		11.43 mm	Not Qualified	1048576 bit	4.5 V		e0		YES	.00001 Amp	20.47 mm	70 ns
KM681000BLGI-7	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	3 mm		11.43 mm	Not Qualified	1048576 bit	4.5 V		e0		YES	.00005 Amp	20.47 mm	70 ns
KM681000CLP-7L	Samsung	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32		5.5 V	5.08 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V		e0		YES	.00001 Amp	41.91 mm	70 ns
KM681000LP-8	Samsung	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32		5.5 V	5.08 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V	BATTERY BACKUP	e0		YES	.00005 Amp	42.035 mm	85 ns
KM68257CJ-15	Samsung	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		5.5 V	3.76 mm		7.62 mm	Not Qualified	262144 bit	4.5 V		e0		YES	.002 Amp	18.42 mm	15 ns
K6T4016V3C-TB55	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e0				18.41 mm	55 ns
KM62256DLRGI-7	Samsung	STANDARD SRAM	INDUSTRIAL	28	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel	YES	3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G28		5.5 V	1.2 mm		8 mm	Not Qualified	262144 bit	4.5 V		e0			.000015 Amp	11.8 mm	70 ns
KM62256BLS-10L	Samsung	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V	5.08 mm		7.62 mm	Not Qualified	262144 bit	4.5 V		e0		YES	.00001 Amp	34.29 mm	100 ns
K7N801849B-PC25T	Samsung	ZBT SRAM	COMMERCIAL				PLASTIC/EPOXY			CMOS		PARALLEL	SYNCHRONOUS	440 mA	524288 words	COMMON	2.5	2.5	18			SRAMs		70 Cel		3-STATE	512KX18	512K	2.38 V	0 Cel	TIN SILVER COPPER				3			250 MHz		Not Qualified	9437184 bit			e1			.06 Amp		2.6 ns
K7A321830C-QI200	Samsung	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		2097152 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel		3-STATE	2MX18	2M	2.38 V	-40 Cel	TIN LEAD	QUAD		R-PQFP-G100		3.465 V	1.6 mm	200 MHz	14 mm	Not Qualified	37748736 bit	3.135 V	PIPELINED ARCHITECTURE, IT CAN ALSO OPERATE AT 2.5V	e0				20 mm	3.1 ns
K6X0808T1D-LF700	Samsung	STANDARD SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3		8	SMALL OUTLINE, THIN PROFILE			.55 mm	85 Cel			32KX8	32K		-40 Cel		DUAL		R-PDSO-G28		3.6 V	1.2 mm		8 mm	Not Qualified	262144 bit	2.7 V						11.8 mm	70 ns
K7P801811B-HC33	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	650 mA	524288 words	COMMON	3.3	1.5,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel		3-STATE	512KX18	512K	3.15 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B119		3.45 V			14 mm	Not Qualified	9437184 bit	3.15 V	PIPELINED ARCHITECTURE	e0			.07 Amp	22 mm	1.5 ns
K6F1016S4B-FF700	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		65536 words		2.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel			64KX16	64K		-40 Cel		BOTTOM		R-PBGA-B48		2.7 V	1.2 mm		6 mm	Not Qualified	1048576 bit	2.3 V						7 mm	70 ns
K6T2008U2A-TF10T	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel		3-STATE	256KX8	256K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32						Not Qualified	2097152 bit			e0					100 ns
KM616V4002CTI-15	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	155 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	3 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e0			.01 Amp	18.41 mm	15 ns
KM6164000AL-LG-45L-L	Samsung	STANDARD SRAM			SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE							256KX16	256K				DUAL		R-PDSO-G						Not Qualified	4194304 bit								45 ns
K7A163600A-QI16T	Samsung	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	85 Cel			512KX36	512K		-40 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE					20 mm	3.5 ns
K6F1016U4C-EF700	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		65536 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel			64KX16	64K		-40 Cel		BOTTOM		R-PBGA-B48		3.3 V	1 mm		6 mm	Not Qualified	1048576 bit	2.7 V						7 mm	70 ns
K6F2016R4G-XF700	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel			128KX16	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	2	1.95 V	1 mm		6 mm	Not Qualified	2097152 bit	1.65 V		e1				7 mm	70 ns
K7B403625A-QC800	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel			128KX36	128K		0 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V						20 mm	8 ns
K6F1016U4B-FF55	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	3	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	64KX16	64K	1.5 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48		3.3 V	1.2 mm		6 mm	Not Qualified	1048576 bit	2.7 V		e0			.000001 Amp	7 mm	55 ns
K7R323684C-FC300	Samsung	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	800 mA	1048576 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	1MX36	1M	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	300 MHz	15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e0	240		.33 Amp	17 mm	.45 ns
K7N403601A-QC16	Samsung	ZBT SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	400 mA	131072 words	COMMON		2.5/3.3,3.3	36	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel		3-STATE	128KX36	128K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3			167 MHz		Not Qualified	4718592 bit			e0			.05 Amp		3.5 ns
KM736V789H-67	Samsung	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel		3-STATE	128KX36	128K	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		3.6 V		149 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	SELF TIMED WRITE CYCLE; BYTE WRITE	e0			.03 Amp	22 mm	3.8 ns
KM641003BLJ-8	Samsung	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel		3-STATE	256KX4	256K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J32	3					Not Qualified	1048576 bit			e0			.0007 Amp		8 ns
KM732V688LT-13	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	250 mA	65536 words	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	64KX32	64K	3.14 V	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm	77 MHz	14 mm	Not Qualified	2097152 bit	3.13 V		e0		YES	.001 Amp	20 mm	13 ns
K7N641845M-PC160	Samsung	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		4194304 words	COMMON	2.5	2.5	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	4MX18	4M	2.38 V	0 Cel		QUAD		R-PQFP-G100	2	2.625 V	1.6 mm	166 MHz	14 mm	Not Qualified	75497472 bit	2.375 V	PIPELINED ARCHITECTURE					20 mm	3.5 ns
K7N323631C-QC250	Samsung	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	460 mA	1048576 words	COMMON	2.5	2.5,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	1MX36	1M	2.38 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100		2.625 V	1.6 mm	250 MHz	14 mm	Not Qualified	37748736 bit	2.375 V	PIPELINED ARCHITECTURE, IT CAN ALSO OPERATES AT 3.3V.	e0			.1 Amp	20 mm	2.6 ns
K7N161845A-HI25	Samsung	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		2.5		18	GRID ARRAY			1.27 mm	85 Cel			1MX18	1M		-40 Cel		BOTTOM		R-PBGA-B119		2.625 V			14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE					22 mm	2.6 ns
K6F2016R4E-EF700	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel			128KX16	128K		-40 Cel		BOTTOM		R-PBGA-B48		2.2 V	1 mm		6 mm	Not Qualified	2097152 bit	1.65 V						7 mm	70 ns
K7J161882B-EI300	Samsung	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	85 Cel			1MX18	1M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	2	1.9 V	1.4 mm		13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e1				15 mm	.45 ns
K6T4008C1B-GB55	Samsung	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V	3 mm		11.43 mm	Not Qualified	4194304 bit	4.5 V		e0				20.47 mm	55 ns
K7R163682B-FC16	Samsung	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	524288 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	512KX36	512K	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm	166 MHz	15 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0			.24 Amp	17 mm	.5 ns
K6F4016R4D-FF70	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	1.8	1.8/2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	256KX16	256K	1 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48		2.2 V	1.2 mm		6.1 mm	Not Qualified	4194304 bit	1.65 V		e0				8.5 mm	70 ns
K6X8008T2B-UF70T	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON		3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	1MX8	1M	1.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G44	1					Not Qualified	8388608 bit			e3			.000015 Amp		70 ns
K6R1008V1A-JC120	Samsung	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	3 V	0 Cel		DUAL		R-PDSO-J32						Not Qualified	1048576 bit						.005 Amp		12 ns
K7A803600B-HC160	Samsung	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel			256KX36	256K		0 Cel		BOTTOM		R-PBGA-B119		3.465 V			14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE					22 mm	3.5 ns
KM616V4002CJI-20	Samsung	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	145 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel		3-STATE	256KX16	256K	3 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-J44		3.6 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e0			.01 Amp	28.58 mm	20 ns
K7I641882M-EC200	Samsung	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	70 Cel			4MX18	4M		0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE					17 mm	.45 ns
KM64V4002BLIJ-12	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		4	SMALL OUTLINE			1.27 mm	85 Cel			1MX4	1M		-40 Cel		DUAL		R-PDSO-J32		3.6 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	3 V	TTL COMPATIBLE INPUTS/OUTPUTS					20.96 mm	12 ns
K7K3236U2C-FC400	Samsung	DDR SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	900 mA	1048576 words	COMMON		1.5/1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	1MX36	1M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165	3			400 MHz		Not Qualified	37748736 bit				240		.35 Amp		.45 ns
K7A401849A-TC25	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		2.5		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel			256KX18	256K		0 Cel		QUAD		R-PQFP-G100		2.625 V	1.6 mm		14 mm	Not Qualified	4718592 bit	2.375 V	SELF-TIMED WRITE CYCLE					20 mm	2.5 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.