Toshiba Photodiodes 15

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Part	Manufacturer	Optoelectronic Type	Mounting Feature	Terminal Finish	Configuration	Size	Maximum Dark Current	No. of Functions	Infrared (IR) Range	Peak Wavelength (nm)	Maximum Response Time	Sub-Category	Maximum Reverse Voltage	Semiconductor Material	Maximum Operating Temperature	Minimum Reverse Breakdown Voltage	Shape	Minimum Operating Temperature	Additional Features	Nominal Light Current	JESD-609 Code
TPS703	Toshiba	PIN PHOTODIODE	THROUGH HOLE MOUNT		SINGLE	7.6 mm	30 nA	1	YES	960	.0000001 s	Photo Diodes	20 V	Silicon	80 Cel	20 V	RECTANGULAR	-30 Cel	HIGH SENSITIVITY	.0015 mA
TPS706(F)	Toshiba	PIN PHOTODIODE	THROUGH HOLE MOUNT				30 nA					Photo Diodes	20 V	Silicon	80 Cel			-30 Cel
TPS703(F)	Toshiba	PIN PHOTODIODE	THROUGH HOLE MOUNT		SINGLE	7.6 mm	30 nA	1	YES	960	.0000001 s	Photo Diodes	20 V	Silicon	80 Cel	20 V	RECTANGULAR	-30 Cel	HIGH SENSITIVITY	.0015 mA
TPS708(F)	Toshiba		THROUGH HOLE MOUNT				60 nA					Photo Diodes	30 V	Silicon	125 Cel			-40 Cel
TPS710	Toshiba	PIN PHOTODIODE	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)	COMMON CATHODE, 2 ELEMENTS	5 mm	3 nA	2	YES	880		Photo Diodes	20 V	Silicon	80 Cel	20 V	RECTANGULAR	-25 Cel			e0
TPS705(F)	Toshiba	PIN PHOTODIODE	THROUGH HOLE MOUNT				30 nA					Photo Diodes	20 V	Silicon	80 Cel			-30 Cel
S2506	Toshiba	PIN PHOTODIODE	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			10 nA				.00000005 s	Photo Diodes	35 V	Silicon	80 Cel			-25 Cel			e0
TOPD320	Toshiba	PIN PHOTODIODE	THROUGH HOLE MOUNT				10 nA					Photo Diodes	30 V	InGaAs	80 Cel			-20 Cel
TPS706	Toshiba	PIN PHOTODIODE	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)	SINGLE	4.5 mm	30 nA	1	YES	970	.0000001 s	Photo Diodes	20 V	Silicon	80 Cel	20 V	ROUND	-30 Cel	HIGH SENSITIVITY	.0015 mA	e0
TPS708	Toshiba	PIN PHOTODIODE	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)	SINGLE	4.675 mm	60 nA	1	YES	850	.0000001 s	Photo Diodes	30 V	Silicon	125 Cel	30 V	ROUND	-40 Cel	HIGH SENSITIVITY	.0015 mA	e0
TPS705	Toshiba	PIN PHOTODIODE	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)	SINGLE	4.5 mm	30 nA	1	YES	970	.0000001 s	Photo Diodes	20 V	Silicon	80 Cel	20 V	ROUND	-30 Cel	HIGH SENSITIVITY	.0009 mA	e0
TOPD300	Toshiba	PIN PHOTODIODE	THROUGH HOLE MOUNT				10 nA					Photo Diodes	30 V	InGaAs	85 Cel			-20 Cel
TPS704(F)	Toshiba	PIN PHOTODIODE	THROUGH HOLE MOUNT		SINGLE	7.6 mm	30 nA	1	YES	1000	.0000001 s	Photo Diodes	20 V	Silicon	60 Cel	20 V	RECTANGULAR	-30 Cel	HIGH SENSITIVITY	.0009 mA
TPS704	Toshiba	PIN PHOTODIODE	THROUGH HOLE MOUNT		SINGLE	7.6 mm	30 nA	1	YES	1000	.0000001 s	Photo Diodes	20 V	Silicon	60 Cel	20 V	RECTANGULAR	-30 Cel	HIGH SENSITIVITY	.0009 mA
TOPD310	Toshiba	PIN PHOTODIODE	THROUGH HOLE MOUNT				10 nA					Photo Diodes	30 V	InGaAs	65 Cel			-10 Cel

Photodiodes

A photodiode is a type of electronic component that uses light to generate an electric current. It is a semiconductor device that is designed to respond to the presence of light by producing a flow of electrons. Photodiodes are widely used in a variety of applications, including in cameras, optical communication systems, and medical equipment.

Photodiodes work by converting light energy into electrical energy. When light hits the photodiode, it creates an electric current that is proportional to the intensity of the light. This current can be measured and used to determine the presence, intensity, and wavelength of the light.

Photodiodes are available in different types, each with their own characteristics and applications. The most common types of photodiodes are PIN photodiodes, avalanche photodiodes, and Schottky photodiodes.

PIN photodiodes are widely used in optical communication systems and are designed for high-speed and low-noise applications. They have a wide spectral response range and are able to detect both visible and infrared light.

Avalanche photodiodes are used in applications that require high sensitivity and low noise, such as in low-light-level imaging and spectroscopy. They are able to generate high gain and high-speed signals, making them ideal for use in low-light-level applications.

Schottky photodiodes are used in applications that require high-speed and high-frequency response, such as in microwave and millimeter-wave detection. They have a low junction capacitance and are able to detect fast-changing signals.