2 % TCVCXO Sine Wave Oscillators 263

Reset All

Part	Manufacturer	Oscillator Type	Mounting Feature	No. of Terminals	Frequency Stability	Frequency Adjustment (Mechanical)	Aging	Package Body Material	Maximum Supply Voltage	Output Impedance	Maximum Supply Current	Nominal Supply Voltage	Package Equivalence Code	Physical Dimension	Minimum Supply Voltage	Maximum Operating Temperature	Minimum Control Voltage	Minimum Operating Temperature	Terminal Finish	Frequency Deviation or Pullability	Nominal Operating Frequency	Maximum Control Voltage	Output Level	Additional Features	JESD-609 Code
7Z-26.000MDS-T	Txc	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/YEAR			10000 ohm		1.8 V		2.0mm x 1.6mm x 0.8mm		85 Cel	.4 V	-30 Cel		16 ppm	26 MHz	2.4 V	.8 V	TAPE
TXEACLSANF-38.400000	Taitien Electronics	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		3.465 V	10000 ohm				3.2mm x 2.5mm x 0.9mm	2.66 V	85 Cel	.5 V	-40 Cel		5 ppm	38.4 MHz	2.5 V	.8 V
520R20IA26M0000	Cts	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.15 V	10000 ohm	2.5 mA	3 V	LCC4,.08X.1,77/53	2.5mm x 2.0mm x 0.8mm	2.85 V	85 Cel	.4 V	-40 Cel	Gold (Au) - with Nickel (Ni) barrier	5 ppm	26 MHz	2.4 V	.8 V	TR, 7 INCH	e4
7L-40.000MDS-T	Txc	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/YEAR			10000 ohm		1.8 V		2.5mm x 2.0mm x 0.8mm		85 Cel	.4 V	-30 Cel		16 ppm	40 MHz	2.4 V	.8 V	TR
X1G004211000100	Seiko Epson	CLIPPED SINE	SURFACE MOUNT		2 %	NO	1 PPM/FIRST YEAR		2.94 V	10000 ohm		2.8 V		2.5mm x 2.0mm x 0.8mm	2.66 V	85 Cel	.4 V	-30 Cel	GOLD	15 ppm	26 MHz	2.4 V	.8 V	TR, 13 INCH	e4
WC325DS0010.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		2.835 V	10000 ohm		2.7 V		3.2mm x 2.5mm x 1.2mm	2.565 V	85 Cel	.4 V	-40 Cel		8 ppm	10 MHz	2.4 V	.8 V
WC325BN0010.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		3.15 V	10000 ohm		3 V		3.2mm x 2.5mm x 1.2mm	2.85 V	75 Cel	.4 V	-30 Cel		8 ppm	10 MHz	2.4 V	.8 V
WC3252D0026.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		2.625 V	10000 ohm		2.5 V		3.2mm x 2.5mm x 1.2mm	2.375 V	70 Cel	.4 V	-20 Cel		8 ppm	26 MHz	2.4 V	.8 V
WC325CD0040.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		2.94 V	10000 ohm		2.8 V		3.2mm x 2.5mm x 1.2mm	2.66 V	70 Cel	.4 V	-20 Cel		8 ppm	40 MHz	2.4 V	.8 V
WC325CN0016.369000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		2.94 V	10000 ohm		2.8 V		3.2mm x 2.5mm x 1.2mm	2.66 V	75 Cel	.4 V	-30 Cel		8 ppm	16.369 MHz	2.4 V	.8 V
WC3254N0010.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		1.575 V	10000 ohm		1.5 V		3.2mm x 2.5mm x 1.2mm	1.425 V	75 Cel	0 V	-30 Cel		8 ppm	10 MHz	1.8 V	.8 V
WC325CS0016.367667	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		2.94 V	10000 ohm		2.8 V		3.2mm x 2.5mm x 1.2mm	2.66 V	85 Cel	.4 V	-40 Cel		8 ppm	16.367667 MHz	2.4 V	.8 V
WC325BN0025.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		3.15 V	10000 ohm		3 V		3.2mm x 2.5mm x 1.2mm	2.85 V	75 Cel	.4 V	-30 Cel		8 ppm	25 MHz	2.4 V	.8 V
WC3251N0025.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		3.465 V	10000 ohm		3.3 V		3.2mm x 2.5mm x 1.2mm	3.135 V	75 Cel	.4 V	-30 Cel		8 ppm	25 MHz	2.4 V	.8 V
WC325CD0026.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		2.94 V	10000 ohm		2.8 V		3.2mm x 2.5mm x 1.2mm	2.66 V	70 Cel	.4 V	-20 Cel		8 ppm	26 MHz	2.4 V	.8 V
WC325ED0016.369000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		2.9925 V	10000 ohm		2.85 V		3.2mm x 2.5mm x 1.2mm	2.7075 V	70 Cel	.4 V	-20 Cel		8 ppm	16.369 MHz	2.4 V	.8 V
WC325CS0025.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		2.94 V	10000 ohm		2.8 V		3.2mm x 2.5mm x 1.2mm	2.66 V	85 Cel	.4 V	-40 Cel		8 ppm	25 MHz	2.4 V	.8 V
WC325GS0019.200000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		2.52 V	10000 ohm		2.4 V		3.2mm x 2.5mm x 1.2mm	2.28 V	85 Cel	.4 V	-40 Cel		8 ppm	19.2 MHz	2.4 V	.8 V
WC325DS0019.200000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		2.835 V	10000 ohm		2.7 V		3.2mm x 2.5mm x 1.2mm	2.565 V	85 Cel	.4 V	-40 Cel		8 ppm	19.2 MHz	2.4 V	.8 V
WC325FD0016.369000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		2.8875 V	10000 ohm		2.75 V		3.2mm x 2.5mm x 1.2mm	2.6125 V	70 Cel	.4 V	-20 Cel		8 ppm	16.369 MHz	2.4 V	.8 V
WC3254N0016.369000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		1.575 V	10000 ohm		1.5 V		3.2mm x 2.5mm x 1.2mm	1.425 V	75 Cel	0 V	-30 Cel		8 ppm	16.369 MHz	1.8 V	.8 V
WC3252N0040.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		2.625 V	10000 ohm		2.5 V		3.2mm x 2.5mm x 1.2mm	2.375 V	75 Cel	.4 V	-30 Cel		8 ppm	40 MHz	2.4 V	.8 V
WC325DD0019.200000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		2.835 V	10000 ohm		2.7 V		3.2mm x 2.5mm x 1.2mm	2.565 V	70 Cel	.4 V	-20 Cel		8 ppm	19.2 MHz	2.4 V	.8 V
WC3252S0040.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		2.625 V	10000 ohm		2.5 V		3.2mm x 2.5mm x 1.2mm	2.375 V	85 Cel	.4 V	-40 Cel		8 ppm	40 MHz	2.4 V	.8 V
WC325CD0016.367667	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		2.94 V	10000 ohm		2.8 V		3.2mm x 2.5mm x 1.2mm	2.66 V	70 Cel	.4 V	-20 Cel		8 ppm	16.367667 MHz	2.4 V	.8 V
WC3253N0016.367667	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		1.89 V	10000 ohm		1.8 V		3.2mm x 2.5mm x 1.2mm	1.71 V	75 Cel	0 V	-30 Cel		8 ppm	16.367667 MHz	1.8 V	.8 V
WC3253S0040.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		1.89 V	10000 ohm		1.8 V		3.2mm x 2.5mm x 1.2mm	1.71 V	85 Cel	0 V	-40 Cel		8 ppm	40 MHz	1.8 V	.8 V
WC325FI0026.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		2.8875 V	10000 ohm		2.75 V		3.2mm x 2.5mm x 1.2mm	2.6125 V	85 Cel	.4 V	-30 Cel		8 ppm	26 MHz	2.4 V	.8 V
WC325GS0025.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		2.52 V	10000 ohm		2.4 V		3.2mm x 2.5mm x 1.2mm	2.28 V	85 Cel	.4 V	-40 Cel		8 ppm	25 MHz	2.4 V	.8 V
WC3254D0019.200000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		1.575 V	10000 ohm		1.5 V		3.2mm x 2.5mm x 1.2mm	1.425 V	70 Cel	0 V	-20 Cel		8 ppm	19.2 MHz	1.8 V	.8 V
WC325GI0040.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		2.52 V	10000 ohm		2.4 V		3.2mm x 2.5mm x 1.2mm	2.28 V	85 Cel	.4 V	-30 Cel		8 ppm	40 MHz	2.4 V	.8 V
WC325GD0019.200000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		2.52 V	10000 ohm		2.4 V		3.2mm x 2.5mm x 1.2mm	2.28 V	70 Cel	.4 V	-20 Cel		8 ppm	19.2 MHz	2.4 V	.8 V
WC3253S0019.200000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		1.89 V	10000 ohm		1.8 V		3.2mm x 2.5mm x 1.2mm	1.71 V	85 Cel	0 V	-40 Cel		8 ppm	19.2 MHz	1.8 V	.8 V
WC325BN0016.367667	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		3.15 V	10000 ohm		3 V		3.2mm x 2.5mm x 1.2mm	2.85 V	75 Cel	.4 V	-30 Cel		8 ppm	16.367667 MHz	2.4 V	.8 V
WC325BD0040.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		3.15 V	10000 ohm		3 V		3.2mm x 2.5mm x 1.2mm	2.85 V	70 Cel	.4 V	-20 Cel		8 ppm	40 MHz	2.4 V	.8 V
WC3251D0010.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		3.465 V	10000 ohm		3.3 V		3.2mm x 2.5mm x 1.2mm	3.135 V	70 Cel	.4 V	-20 Cel		8 ppm	10 MHz	2.4 V	.8 V
WC325DS0025.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		2.835 V	10000 ohm		2.7 V		3.2mm x 2.5mm x 1.2mm	2.565 V	85 Cel	.4 V	-40 Cel		8 ppm	25 MHz	2.4 V	.8 V
WC3254D0010.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		1.575 V	10000 ohm		1.5 V		3.2mm x 2.5mm x 1.2mm	1.425 V	70 Cel	0 V	-20 Cel		8 ppm	10 MHz	1.8 V	.8 V
WC3253I0010.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		1.89 V	10000 ohm		1.8 V		3.2mm x 2.5mm x 1.2mm	1.71 V	85 Cel	0 V	-30 Cel		8 ppm	10 MHz	1.8 V	.8 V
WC3251I0016.367667	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		3.465 V	10000 ohm		3.3 V		3.2mm x 2.5mm x 1.2mm	3.135 V	85 Cel	.4 V	-30 Cel		8 ppm	16.367667 MHz	2.4 V	.8 V
WC325GI0010.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		2.52 V	10000 ohm		2.4 V		3.2mm x 2.5mm x 1.2mm	2.28 V	85 Cel	.4 V	-30 Cel		8 ppm	10 MHz	2.4 V	.8 V
WC325EI0010.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		2.9925 V	10000 ohm		2.85 V		3.2mm x 2.5mm x 1.2mm	2.7075 V	85 Cel	.4 V	-30 Cel		8 ppm	10 MHz	2.4 V	.8 V
WC3253I0040.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		1.89 V	10000 ohm		1.8 V		3.2mm x 2.5mm x 1.2mm	1.71 V	85 Cel	0 V	-30 Cel		8 ppm	40 MHz	1.8 V	.8 V
WC325CN0025.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		2.94 V	10000 ohm		2.8 V		3.2mm x 2.5mm x 1.2mm	2.66 V	75 Cel	.4 V	-30 Cel		8 ppm	25 MHz	2.4 V	.8 V
WC325CI0025.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		2.94 V	10000 ohm		2.8 V		3.2mm x 2.5mm x 1.2mm	2.66 V	85 Cel	.4 V	-30 Cel		8 ppm	25 MHz	2.4 V	.8 V
WC3252D0016.367667	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		2.625 V	10000 ohm		2.5 V		3.2mm x 2.5mm x 1.2mm	2.375 V	70 Cel	.4 V	-20 Cel		8 ppm	16.367667 MHz	2.4 V	.8 V
WC325DI0040.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		2.835 V	10000 ohm		2.7 V		3.2mm x 2.5mm x 1.2mm	2.565 V	85 Cel	.4 V	-30 Cel		8 ppm	40 MHz	2.4 V	.8 V
WC325FN0010.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		2.8875 V	10000 ohm		2.75 V		3.2mm x 2.5mm x 1.2mm	2.6125 V	75 Cel	.4 V	-30 Cel		8 ppm	10 MHz	2.4 V	.8 V

TCVCXO Sine Wave Oscillators

TCVCXO (Temperature Compensated Voltage Controlled Crystal Oscillator) sine wave oscillators are electronic devices that generate a stable sine wave signal for use in various applications, such as communication systems, test and measurement equipment, and frequency synthesizers. They use a crystal oscillator as a frequency reference and a temperature compensation circuit to stabilize the oscillator frequency.

The TCVCXO sine wave oscillator works by using a temperature compensation circuit to adjust the voltage applied to the crystal oscillator, compensating for changes in temperature that can affect the oscillator frequency. This results in a stable and accurate sine wave signal output.

One of the advantages of TCVCXO sine wave oscillators is their high stability and accuracy over a wide temperature range. They can generate sine wave signals with very low frequency drift and jitter, making them ideal for use in applications that require precise timing.

Another advantage of TCVCXO sine wave oscillators is their low phase noise and wide frequency range. They can generate sine wave signals at frequencies ranging from a few kilohertz to hundreds of megahertz, and have very low phase noise, making them suitable for use in high-precision applications.