TCVCXO Sine Wave Oscillators

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Part	Manufacturer	Oscillator Type	Mounting Feature	No. of Terminals	Frequency Stability	Frequency Adjustment (Mechanical)	Aging	Maximum Supply Voltage	Output Impedance	Nominal Supply Voltage	Physical Dimension	Minimum Supply Voltage	Maximum Operating Temperature	Minimum Control Voltage	Minimum Operating Temperature	Frequency Deviation or Pullability	Nominal Operating Frequency	Maximum Control Voltage	Output Level
WC325FG0016.367667	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1 %	NO	1 PPM/FIRST YEAR	2.8875 V	10000 ohm	2.75 V	3.2mm x 2.5mm x 1.2mm	2.6125 V	85 Cel	.4 V	-30 Cel	8 ppm	16.367667 MHz	2.4 V	.8 V
WC325BX0025.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	5 %	NO	1 PPM/FIRST YEAR	3.15 V	10000 ohm	3 V	3.2mm x 2.5mm x 1.2mm	2.85 V	85 Cel	.4 V	-30 Cel	8 ppm	25 MHz	2.4 V	.8 V
WC325FE0016.369000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2.5 %	NO	1 PPM/FIRST YEAR	2.8875 V	10000 ohm	2.75 V	3.2mm x 2.5mm x 1.2mm	2.6125 V	70 Cel	.4 V	-20 Cel	8 ppm	16.369 MHz	2.4 V	.8 V
WC325CA0026.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	1 PPM/FIRST YEAR	2.94 V	10000 ohm	2.8 V	3.2mm x 2.5mm x 1.2mm	2.66 V	70 Cel	.4 V	-20 Cel	8 ppm	26 MHz	2.4 V	.8 V
WC3253A0019.200000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	1 PPM/FIRST YEAR	1.89 V	10000 ohm	1.8 V	3.2mm x 2.5mm x 1.2mm	1.71 V	70 Cel	0 V	-20 Cel	8 ppm	19.2 MHz	1.8 V	.8 V
WC325FI0026.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR	2.8875 V	10000 ohm	2.75 V	3.2mm x 2.5mm x 1.2mm	2.6125 V	85 Cel	.4 V	-30 Cel	8 ppm	26 MHz	2.4 V	.8 V
WC325GM0026.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1.5 %	NO	1 PPM/FIRST YEAR	2.52 V	10000 ohm	2.4 V	3.2mm x 2.5mm x 1.2mm	2.28 V	75 Cel	.4 V	-30 Cel	8 ppm	26 MHz	2.4 V	.8 V
WC325GS0025.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR	2.52 V	10000 ohm	2.4 V	3.2mm x 2.5mm x 1.2mm	2.28 V	85 Cel	.4 V	-40 Cel	8 ppm	25 MHz	2.4 V	.8 V
WC3254G0010.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1 %	NO	1 PPM/FIRST YEAR	1.575 V	10000 ohm	1.5 V	3.2mm x 2.5mm x 1.2mm	1.425 V	85 Cel	0 V	-30 Cel	8 ppm	10 MHz	1.8 V	.8 V
WC325GM0040.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1.5 %	NO	1 PPM/FIRST YEAR	2.52 V	10000 ohm	2.4 V	3.2mm x 2.5mm x 1.2mm	2.28 V	75 Cel	.4 V	-30 Cel	8 ppm	40 MHz	2.4 V	.8 V
WC3251Q0016.367667	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1 %	NO	1 PPM/FIRST YEAR	3.465 V	10000 ohm	3.3 V	3.2mm x 2.5mm x 1.2mm	3.135 V	85 Cel	.4 V	-40 Cel	8 ppm	16.367667 MHz	2.4 V	.8 V
WC325FW0019.200000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	5 %	NO	1 PPM/FIRST YEAR	2.8875 V	10000 ohm	2.75 V	3.2mm x 2.5mm x 1.2mm	2.6125 V	70 Cel	.4 V	-20 Cel	8 ppm	19.2 MHz	2.4 V	.8 V
WC3251Y0026.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	5 %	NO	1 PPM/FIRST YEAR	3.465 V	10000 ohm	3.3 V	3.2mm x 2.5mm x 1.2mm	3.135 V	75 Cel	.4 V	-30 Cel	8 ppm	26 MHz	2.4 V	.8 V
WC3254D0019.200000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR	1.575 V	10000 ohm	1.5 V	3.2mm x 2.5mm x 1.2mm	1.425 V	70 Cel	0 V	-20 Cel	8 ppm	19.2 MHz	1.8 V	.8 V
WC325BC0016.367667	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1.5 %	NO	1 PPM/FIRST YEAR	3.15 V	10000 ohm	3 V	3.2mm x 2.5mm x 1.2mm	2.85 V	70 Cel	.4 V	-20 Cel	8 ppm	16.367667 MHz	2.4 V	.8 V
WC325DT0040.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2.5 %	NO	1 PPM/FIRST YEAR	2.835 V	10000 ohm	2.7 V	3.2mm x 2.5mm x 1.2mm	2.565 V	85 Cel	.4 V	-40 Cel	8 ppm	40 MHz	2.4 V	.8 V
WC3251A0026.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	1 PPM/FIRST YEAR	3.465 V	10000 ohm	3.3 V	3.2mm x 2.5mm x 1.2mm	3.135 V	70 Cel	.4 V	-20 Cel	8 ppm	26 MHz	2.4 V	.8 V
WC325DR0025.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1.5 %	NO	1 PPM/FIRST YEAR	2.835 V	10000 ohm	2.7 V	3.2mm x 2.5mm x 1.2mm	2.565 V	85 Cel	.4 V	-40 Cel	8 ppm	25 MHz	2.4 V	.8 V
WC325DB0016.369000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1 %	NO	1 PPM/FIRST YEAR	2.835 V	10000 ohm	2.7 V	3.2mm x 2.5mm x 1.2mm	2.565 V	70 Cel	.4 V	-20 Cel	8 ppm	16.369 MHz	2.4 V	.8 V
WC325GX0040.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	5 %	NO	1 PPM/FIRST YEAR	2.52 V	10000 ohm	2.4 V	3.2mm x 2.5mm x 1.2mm	2.28 V	85 Cel	.4 V	-30 Cel	8 ppm	40 MHz	2.4 V	.8 V
WC325BB0016.367667	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1 %	NO	1 PPM/FIRST YEAR	3.15 V	10000 ohm	3 V	3.2mm x 2.5mm x 1.2mm	2.85 V	70 Cel	.4 V	-20 Cel	8 ppm	16.367667 MHz	2.4 V	.8 V
WC3254Q0025.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1 %	NO	1 PPM/FIRST YEAR	1.575 V	10000 ohm	1.5 V	3.2mm x 2.5mm x 1.2mm	1.425 V	85 Cel	0 V	-40 Cel	8 ppm	25 MHz	1.8 V	.8 V
WC3251C0025.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1.5 %	NO	1 PPM/FIRST YEAR	3.465 V	10000 ohm	3.3 V	3.2mm x 2.5mm x 1.2mm	3.135 V	70 Cel	.4 V	-20 Cel	8 ppm	25 MHz	2.4 V	.8 V
WC325FP0040.000000	Diodes Incorporated
WC325FE0025.000000	Diodes Incorporated
WC325EX0040.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	5 %	NO	1 PPM/FIRST YEAR	2.9925 V	10000 ohm	2.85 V	3.2mm x 2.5mm x 1.2mm	2.7075 V	85 Cel	.4 V	-30 Cel	8 ppm	40 MHz	2.4 V	.8 V
WC325GK0026.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	1 PPM/FIRST YEAR	2.52 V	10000 ohm	2.4 V	3.2mm x 2.5mm x 1.2mm	2.28 V	75 Cel	.4 V	-30 Cel	8 ppm	26 MHz	2.4 V	.8 V
WC325DQ0019.200000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1 %	NO	1 PPM/FIRST YEAR	2.835 V	10000 ohm	2.7 V	3.2mm x 2.5mm x 1.2mm	2.565 V	85 Cel	.4 V	-40 Cel	8 ppm	19.2 MHz	2.4 V	.8 V
WC325CQ0019.200000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1 %	NO	1 PPM/FIRST YEAR	2.94 V	10000 ohm	2.8 V	3.2mm x 2.5mm x 1.2mm	2.66 V	85 Cel	.4 V	-40 Cel	8 ppm	19.2 MHz	2.4 V	.8 V
WC325FE0019.200000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2.5 %	NO	1 PPM/FIRST YEAR	2.8875 V	10000 ohm	2.75 V	3.2mm x 2.5mm x 1.2mm	2.6125 V	70 Cel	.4 V	-20 Cel	8 ppm	19.2 MHz	2.4 V	.8 V
WC325GF0016.367667	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	1 PPM/FIRST YEAR	2.52 V	10000 ohm	2.4 V	3.2mm x 2.5mm x 1.2mm	2.28 V	85 Cel	.4 V	-30 Cel	8 ppm	16.367667 MHz	2.4 V	.8 V
WC325GI0040.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR	2.52 V	10000 ohm	2.4 V	3.2mm x 2.5mm x 1.2mm	2.28 V	85 Cel	.4 V	-30 Cel	8 ppm	40 MHz	2.4 V	.8 V
WC325GD0019.200000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR	2.52 V	10000 ohm	2.4 V	3.2mm x 2.5mm x 1.2mm	2.28 V	70 Cel	.4 V	-20 Cel	8 ppm	19.2 MHz	2.4 V	.8 V
WC3253S0019.200000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR	1.89 V	10000 ohm	1.8 V	3.2mm x 2.5mm x 1.2mm	1.71 V	85 Cel	0 V	-40 Cel	8 ppm	19.2 MHz	1.8 V	.8 V
WC325BK0016.367667	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	1 PPM/FIRST YEAR	3.15 V	10000 ohm	3 V	3.2mm x 2.5mm x 1.2mm	2.85 V	75 Cel	.4 V	-30 Cel	8 ppm	16.367667 MHz	2.4 V	.8 V
WC3252L0019.200000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1 %	NO	1 PPM/FIRST YEAR	2.625 V	10000 ohm	2.5 V	3.2mm x 2.5mm x 1.2mm	2.375 V	75 Cel	.4 V	-30 Cel	8 ppm	19.2 MHz	2.4 V	.8 V
WC3253T0025.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2.5 %	NO	1 PPM/FIRST YEAR	1.89 V	10000 ohm	1.8 V	3.2mm x 2.5mm x 1.2mm	1.71 V	85 Cel	0 V	-40 Cel	8 ppm	25 MHz	1.8 V	.8 V
WC325BN0016.367667	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR	3.15 V	10000 ohm	3 V	3.2mm x 2.5mm x 1.2mm	2.85 V	75 Cel	.4 V	-30 Cel	8 ppm	16.367667 MHz	2.4 V	.8 V
WC325EB0040.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1 %	NO	1 PPM/FIRST YEAR	2.9925 V	10000 ohm	2.85 V	3.2mm x 2.5mm x 1.2mm	2.7075 V	70 Cel	.4 V	-20 Cel	8 ppm	40 MHz	2.4 V	.8 V
WC325GA0025.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	1 PPM/FIRST YEAR	2.52 V	10000 ohm	2.4 V	3.2mm x 2.5mm x 1.2mm	2.28 V	70 Cel	.4 V	-20 Cel	8 ppm	25 MHz	2.4 V	.8 V
WC3251C0016.369000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1.5 %	NO	1 PPM/FIRST YEAR	3.465 V	10000 ohm	3.3 V	3.2mm x 2.5mm x 1.2mm	3.135 V	70 Cel	.4 V	-20 Cel	8 ppm	16.369 MHz	2.4 V	.8 V
WC325BD0040.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR	3.15 V	10000 ohm	3 V	3.2mm x 2.5mm x 1.2mm	2.85 V	70 Cel	.4 V	-20 Cel	8 ppm	40 MHz	2.4 V	.8 V
WC3254B0010.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1 %	NO	1 PPM/FIRST YEAR	1.575 V	10000 ohm	1.5 V	3.2mm x 2.5mm x 1.2mm	1.425 V	70 Cel	0 V	-20 Cel	8 ppm	10 MHz	1.8 V	.8 V
WC3252Q0040.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1 %	NO	1 PPM/FIRST YEAR	2.625 V	10000 ohm	2.5 V	3.2mm x 2.5mm x 1.2mm	2.375 V	85 Cel	.4 V	-40 Cel	8 ppm	40 MHz	2.4 V	.8 V
WC3251D0010.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR	3.465 V	10000 ohm	3.3 V	3.2mm x 2.5mm x 1.2mm	3.135 V	70 Cel	.4 V	-20 Cel	8 ppm	10 MHz	2.4 V	.8 V
WC3251X0026.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	5 %	NO	1 PPM/FIRST YEAR	3.465 V	10000 ohm	3.3 V	3.2mm x 2.5mm x 1.2mm	3.135 V	85 Cel	.4 V	-30 Cel	8 ppm	26 MHz	2.4 V	.8 V
WC325DS0025.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR	2.835 V	10000 ohm	2.7 V	3.2mm x 2.5mm x 1.2mm	2.565 V	85 Cel	.4 V	-40 Cel	8 ppm	25 MHz	2.4 V	.8 V
WC325FL0016.367667	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1 %	NO	1 PPM/FIRST YEAR	2.8875 V	10000 ohm	2.75 V	3.2mm x 2.5mm x 1.2mm	2.6125 V	75 Cel	.4 V	-30 Cel	8 ppm	16.367667 MHz	2.4 V	.8 V

TCVCXO (Temperature Compensated Voltage Controlled Crystal Oscillator) sine wave oscillators are electronic devices that generate a stable sine wave signal for use in various applications, such as communication systems, test and measurement equipment, and frequency synthesizers. They use a crystal oscillator as a frequency reference and a temperature compensation circuit to stabilize the oscillator frequency.

The TCVCXO sine wave oscillator works by using a temperature compensation circuit to adjust the voltage applied to the crystal oscillator, compensating for changes in temperature that can affect the oscillator frequency. This results in a stable and accurate sine wave signal output.

One of the advantages of TCVCXO sine wave oscillators is their high stability and accuracy over a wide temperature range. They can generate sine wave signals with very low frequency drift and jitter, making them ideal for use in applications that require precise timing.

Another advantage of TCVCXO sine wave oscillators is their low phase noise and wide frequency range. They can generate sine wave signals at frequencies ranging from a few kilohertz to hundreds of megahertz, and have very low phase noise, making them suitable for use in high-precision applications.