10 TCXO Clock Oscillators 41

Reset All
Part RoHS Manufacturer Oscillator Type Mounting Feature No. of Terminals Frequency Stability Frequency Adjustment (Mechanical) Aging Package Body Material Maximum Supply Voltage Technology Output Load Maximum Supply Current Nominal Supply Voltage Power Supplies (V) Package Equivalence Code Maximum Rise Time Sub-Category Physical Dimension Minimum Supply Voltage Maximum Operating Temperature Minimum Operating Temperature Terminal Finish Nominal Operating Frequency Maximum Fall Time Maximum Symmetry (%) Manufacturer Series Qualification Maximum Output Low Current Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

SIT5356AI-FQ-33E0-10.000000X

Sitime

LVCMOS

SURFACE MOUNT

10

.1 %

NO

1 PPM/FIRST YEAR

CERAMIC

3.63 V

15 pF

3.3 V

LCC10,.12X.2,53/47/43

1.9 ms

5.15mm x 3.35mm x 1.06mm

2.97 V

85 Cel

-40 Cel

10 MHz

1.9 ns

55/45

ENABLE/DISABLE FUNCTION

SIT5356AI-FQ-33E0-25.000000X

Sitime

LVCMOS

SURFACE MOUNT

10

.1 %

NO

1 PPM/FIRST YEAR

CERAMIC

3.63 V

15 pF

3.3 V

LCC10,.12X.2,53/47/43

1.9 ms

5.15mm x 3.35mm x 1.06mm

2.97 V

85 Cel

-40 Cel

25 MHz

1.9 ns

55/45

ENABLE/DISABLE FUNCTION

D75A-010.0M

Connor Winfield

LVCMOS

SURFACE MOUNT

10

.28 %

NO

CERAMIC

3.465 V

15 pF

6 mA

3.3 V

LCC10,.2X.27,100/50

8 ms

7.0mm x 5.0mm x 2.0mm

3.135 V

70 Cel

0 Cel

10 MHz

8 ns

55/45

TRI-STATE; ENABLE/DISABLE FUNCTION

SIT5156AI-FK-33E0-25.000000X

Sitime

LVCMOS

SURFACE MOUNT

10

.5 %

NO

1 PPM/FIRST YEAR

CERAMIC

3.63 V

15 pF

3.3 V

LCC10,.12X.2,53/47/43

1.9 ms

5.15mm x 3.35mm x 1.06mm

2.97 V

85 Cel

-40 Cel

25 MHz

1.9 ns

55/45

ENABLE/DISABLE FUNCTION

SIT5356AI-FN-33E0-20.000000

Sitime

LVCMOS

SURFACE MOUNT

10

.25 %

NO

1 PPM/FIRST YEAR

CERAMIC

3.63 V

15 pF

3.3 V

LCC10,.12X.2,53/47/43

1.9 ms

5.15mm x 3.35mm x 1.06mm

2.97 V

85 Cel

-40 Cel

20 MHz

1.9 ns

55/45

ENABLE/DISABLE FUNCTION

SIT5155AI-FK-33E0-10.000000X

Sitime

LVCMOS

SURFACE MOUNT

10

.5 %

NO

1 PPM/YEAR

CERAMIC

3.63 V

15 pF

3.3 V

LCC10,.12X.2,58/52/48

1.9 ms

5.15mm x 3.35mm x 1.06mm

2.97 V

85 Cel

-40 Cel

10 MHz

1.9 ns

55/45

ENABLE/DISABLE FUNCTION; MIL-STD-883F

T602-025.0M

Connor Winfield

LVCMOS

SURFACE MOUNT

10

.28 %

NO

3 PPM/TWENTY YEAR

3.465 V

15 pF

3.3 V

8 ms

7.0mm x 5.0mm x 2.0mm

3.135 V

85 Cel

-40 Cel

25 MHz

8 ns

55/45

TRI-STATE; ENABLE/DISABLE FUNCTION; TAPE AND REEL

T602-010.0M

Connor Winfield

LVCMOS

SURFACE MOUNT

10

.28 %

NO

3 PPM/TWENTY YEAR

3.465 V

15 pF

3.3 V

8 ms

7.0mm x 5.0mm x 2.0mm

3.135 V

85 Cel

-40 Cel

10 MHz

8 ns

55/45

TRI-STATE; ENABLE/DISABLE FUNCTION; TAPE AND REEL

TG-3541CE32.7680KXA3

Seiko Epson

CMOS

SURFACE MOUNT

10

8 %

NO

3 PPM/FIRST YEAR

CERAMIC

5.5 V

30 pF

.003 mA

SOLCC10,.1,28

3.2mm x 2.5mm x 1.0mm

1.5 V

105 Cel

85 Cel

.032768 MHz

60/40

ENABLE/DISABLE FUNCTION; OTHER OPERATING TEMP ALSO AVAILABLE; TR

SIT5356AE-FQ-33N0-48.000000Y

Sitime

LVCMOS

SURFACE MOUNT

10

.1 %

NO

1 PPM/FIRST YEAR

CERAMIC

3.63 V

15 pF

3.3 V

LCC10,.12X.2,53/47/43

1.9 ms

5.15mm x 3.35mm x 1.06mm

2.97 V

105 Cel

-40 Cel

GOLD OVER NICKEL

48 MHz

1.9 ns

55/45

e4

SIT5156AE-FD-33E0-48.000000Y

Sitime

LVCMOS

SURFACE MOUNT

10

2.5 %

NO

1 PPM/FIRST YEAR

CERAMIC

3.63 V

15 pF

3.3 V

LCC10,.12X.2,53/47/43

1.9 ms

5.15mm x 3.35mm x 1.06mm

2.97 V

105 Cel

-40 Cel

48 MHz

1.9 ns

55/45

ENABLE/DISABLE FUNCTION

SIT5356AE-FQ-33E0-50.000000

Sitime

LVCMOS

SURFACE MOUNT

10

.1 %

NO

1 PPM/FIRST YEAR

CERAMIC

3.63 V

15 pF

3.3 V

LCC10,.12X.2,53/47/43

1.9 ms

5.15mm x 3.35mm x 1.06mm

2.97 V

105 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

50 MHz

1.9 ns

55/45

ENABLE/DISABLE FUNCTION

e4

SIT5356AE-FQ-33E0-50.000000F

Sitime

LVCMOS

SURFACE MOUNT

10

.1 %

NO

1 PPM/FIRST YEAR

CERAMIC

3.63 V

15 pF

3.3 V

LCC10,.12X.2,53/47/43

1.9 ms

5.15mm x 3.35mm x 1.06mm

2.97 V

105 Cel

-40 Cel

50 MHz

1.9 ns

55/45

ENABLE/DISABLE FUNCTION

SIT5356AE-FQ-33E0-50.000000X

Sitime

LVCMOS

SURFACE MOUNT

10

.1 %

NO

1 PPM/FIRST YEAR

CERAMIC

3.63 V

15 pF

3.3 V

LCC10,.12X.2,53/47/43

1.9 ms

5.15mm x 3.35mm x 1.06mm

2.97 V

105 Cel

-40 Cel

50 MHz

1.9 ns

55/45

ENABLE/DISABLE FUNCTION

SIT5356AE-FQ-33E0-50.000000Y

Sitime

LVCMOS

SURFACE MOUNT

10

.1 %

NO

1 PPM/FIRST YEAR

CERAMIC

3.63 V

15 pF

3.3 V

LCC10,.12X.2,53/47/43

1.9 ms

5.15mm x 3.35mm x 1.06mm

2.97 V

105 Cel

-40 Cel

GOLD OVER NICKEL

50 MHz

1.9 ns

55/45

ENABLE/DISABLE FUNCTION

e4

SIT5356AI-FQ-30E0-25.000000

Sitime

LVCMOS

SURFACE MOUNT

10

.1 %

NO

1 PPM/FIRST YEAR

CERAMIC

3.3 V

15 pF

3 V

LCC10,.12X.2,53/47/43

1.9 ms

5.15mm x 3.35mm x 1.06mm

2.7 V

85 Cel

-40 Cel

25 MHz

1.9 ns

55/45

ENABLE/DISABLE FUNCTION

T200F-024.576M

Connor Winfield

LVCMOS

SURFACE MOUNT

10

.2 %

NO

0.04 PPM/DAY

CERAMIC

3.465 V

15 pF

6.5 mA

3.3 V

LCC10,.2X.28,100/50

8 ms

7mm x 5mm x 2.4mm

3.135 V

85 Cel

-40 Cel

24.576 MHz

8 ns

55/45

TRI-STATE; ENABLE/DISABLE FUNCTION

SIT5356AI-FP-33N0-40.000000

Sitime

LVCMOS

SURFACE MOUNT

10

.2 %

NO

1 PPM/FIRST YEAR

CERAMIC

3.63 V

15 pF

3.3 V

LCC10,.12X.2,53/47/43

1.9 ms

5.15mm x 3.35mm x 1.06mm

2.97 V

85 Cel

-40 Cel

40 MHz

1.9 ns

55/45

SIT5356AI-FQ-33E0-25.000000F

Sitime

LVCMOS

SURFACE MOUNT

10

.1 %

NO

1 PPM/FIRST YEAR

CERAMIC

3.63 V

15 pF

3.3 V

LCC10,.12X.2,53/47/43

1.9 ms

5.15mm x 3.35mm x 1.06mm

2.97 V

85 Cel

-40 Cel

25 MHz

1.9 ns

55/45

ENABLE/DISABLE FUNCTION

SIT5356AI-FQ-33E0-26.000000

Sitime

LVCMOS

SURFACE MOUNT

10

.1 %

NO

1 PPM/FIRST YEAR

CERAMIC

3.63 V

15 pF

3.3 V

LCC10,.12X.2,53/47/43

1.9 ms

5.15mm x 3.35mm x 1.06mm

2.97 V

85 Cel

-40 Cel

26 MHz

1.9 ns

55/45

ENABLE/DISABLE FUNCTION

536L38401IT5

Cts

HCMOS

SURFACE MOUNT

10

.1 %

NO

1 PPM/FIRST YEAR

3.47 V

15 pF

10 mA

3.3 V

LCC10,.12X.2,47

8 ms

5mm x 3.2mm x 2mm

3.14 V

85 Cel

-40 Cel

Gold Flash (Au) - with Nickel (Ni) barrier

38.4 MHz

8 ns

55/45

SIT5358AN-FR-33E0-38.400000F

Sitime

LVCMOS

SURFACE MOUNT

10

.05 %

NO

0.3 PPM/YEAR

3.63 V

15 pF

3.3 V

1.9 ms

5.15mm x 3.35mm x 1.06mm

2.97 V

70 Cel

0 Cel

GOLD OVER NICKEL

38.4 MHz

1.9 ns

55/45

ENABLE/DISABLE FUNCTION; TR

e4

SIT5358AN-FR-33E0-38.400000T

Sitime

LVCMOS

SURFACE MOUNT

10

.05 %

NO

0.3 PPM/YEAR

3.63 V

15 pF

3.3 V

1.9 ms

5.15mm x 3.35mm x 1.06mm

2.97 V

70 Cel

0 Cel

GOLD OVER NICKEL

38.4 MHz

1.9 ns

55/45

ENABLE/DISABLE FUNCTION; TR

e4

TG-3541CE32.7680KXA0

Seiko Epson

CMOS

SURFACE MOUNT

10

3.4 %

NO

3 PPM/FIRST YEAR

CERAMIC

5.5 V

30 pF

.003 mA

SOLCC10,.1,28

3.2mm x 2.5mm x 1.0mm

1.5 V

85 Cel

-40 Cel

.032768 MHz

60/40

STABILITY OF 8 PPM & 1.9 PPM IS ALSO AVAILABLE OVER 85 TO 105 & 0 TO 50 TEMP RANGE; ENABLE/DISABLE

SIT5157AC-FD033JB-156.525000

Sitime

LVCMOS

SURFACE MOUNT

10

2.5 %

NO

1 PPM/FIRST YEAR

CERAMIC

3.63 V

220 OHM, 550 pF

3.3 V

LCC10,.12X.2,53/47/43

1.9 ms

5.15mm x 3.35mm x 1.06mm

2.97 V

70 Cel

-20 Cel

156.525 MHz

1.9 ns

55/42

SIT5356AI-FQ-33E0-20.000000

Sitime

LVCMOS

SURFACE MOUNT

10

.1 %

NO

1 PPM/FIRST YEAR

CERAMIC

3.63 V

15 pF

3.3 V

LCC10,.12X.2,53/47/43

1.9 ms

5.15mm x 3.35mm x 1.06mm

2.97 V

85 Cel

-40 Cel

20 MHz

1.9 ns

55/45

ENABLE/DISABLE FUNCTION

536L10001IT5

Cts

HCMOS

SURFACE MOUNT

10

.1 %

NO

1 PPM/FIRST YEAR

3.465 V

15 pF

10 mA

3.3 V

LCC10,.12X.2,50/40

8 ms

5mm x 3.2mm x 2mm

3.135 V

85 Cel

-40 Cel

Gold (Au) - with Nickel (Ni) barrier

10 MHz

8 ns

55/45

e4

536L10005GT5

Cts

HCMOS

SURFACE MOUNT

10

.5 %

NO

1 PPM/FIRST YEAR

3.47 V

15 pF

10 mA

3.3 V

LCC10,.12X.2,47

8 ms

5mm x 3.2mm x 2mm

3.14 V

105 Cel

-40 Cel

Gold Flash (Au) - with Nickel (Ni) barrier

10 MHz

8 ns

55/45

822AR-12.8-2SC10I

Renesas Electronics

HCMOS

SURFACE MOUNT

10

.28 %

NO

1 PPM/YEAR

3.465 V

15 pF

3.3 V

5 ms

7.0mm x 5.0mm x 2.0mm

3.135 V

85 Cel

-40 Cel

Matte Tin (Sn)

12.8 MHz

5 ns

55/45

e3

E3179LF

Rakon

HCMOS

SURFACE MOUNT

10

.28 %

NO

0.32 PPM/24 HOUR

3.465 V

15 pF

3.3 V

9 ms

7.0mm x 5.0mm x 2.0mm

3.135 V

80 Cel

-5 Cel

20 MHz

9 ns

55/45

TRI-STATE; ENABLE/DISABLE FUNCTION

SIT5155AI-FK-33E0-10.000000

Sitime

LVCMOS

SURFACE MOUNT

10

.5 %

NO

1 PPM/YEAR

CERAMIC

3.63 V

15 pF

3.3 V

LCC10,.12X.2,58/52/48

1.9 ms

5.15mm x 3.35mm x 1.06mm

2.97 V

85 Cel

-40 Cel

GOLD OVER NICKEL

10 MHz

1.9 ns

55/45

ENABLE/DISABLE FUNCTION; MIL-STD-883F

e4

SIT5155AI-FK-33E0-20.000000

Sitime

LVCMOS

SURFACE MOUNT

10

.5 %

NO

1 PPM/YEAR

CERAMIC

3.63 V

15 pF

53 mA

3.3 V

LCC10,.12X.2,58/52/48

1.9 ms

5.15mm x 3.35mm x 1.06mm

2.97 V

85 Cel

-40 Cel

GOLD OVER NICKEL

20 MHz

1.9 ns

55/45

ENABLE/DISABLE FUNCTION; MIL-STD-883F

e4

SIT5155AI-FK-33E0-20.000000X

Sitime

LVCMOS

SURFACE MOUNT

10

.5 %

NO

1 PPM/YEAR

CERAMIC

3.63 V

15 pF

53 mA

3.3 V

LCC10,.12X.2,58/52/48

1.9 ms

5.15mm x 3.35mm x 1.06mm

2.97 V

85 Cel

-40 Cel

20 MHz

1.9 ns

55/45

ENABLE/DISABLE FUNCTION; MIL-STD-883F

SIT5157AI-FK-33N0-100.000000

Sitime

LVCMOS

SURFACE MOUNT

10

.5 %

NO

1 PPM/YEAR

CERAMIC

3.63 V

15 pF

62 mA

3.3 V

LCC10,.12X.2,58/52/48

1.9 ms

5.15mm x 3.35mm x 1.06mm

2.97 V

85 Cel

-40 Cel

GOLD OVER NICKEL

100 MHz

1.9 ns

55/45

MIL-STD-883F

e4

SIT5346AE-FQG33ITB60.000000

Sitime

LVCMOS

SURFACE MOUNT

10

.1 %

NO

0.23 PPM/FIRST YEAR

CERAMIC

3.63 V

15 pF

53 mA

3.3 V

LCC10,.13X.2,58/52/48

1.9 ms

5.15mm x 3.35mm x 1.06mm

2.97 V

105 Cel

-40 Cel

60 MHz

1.9 ns

55/45

ENABLE/DISABLE FUNCTION

SIT5347ACFN-33E0B150.000000

Sitime

LVCMOS

SURFACE MOUNT

10

.25 %

NO

0.3 PPM/YEAR

CERAMIC

3.63 V

15 pF

62 mA

3.3 V

LCC10,.13X.2,58/52/48

1.9 ms

5.15mm x 3.35mm x 1.06mm

2.97 V

70 Cel

-20 Cel

150 MHz

1.9 ns

55/42

ENABLE/DISABLE FUNCTION

SIT5356AI-FQ-33E0-25.000000

Sitime

LVCMOS

SURFACE MOUNT

10

.1 %

NO

1 PPM/FIRST YEAR

CERAMIC

3.63 V

15 pF

3.3 V

LCC10,.12X.2,53/47/43

1.9 ms

5.15mm x 3.35mm x 1.06mm

2.97 V

85 Cel

-40 Cel

25 MHz

1.9 ns

55/45

ENABLE/DISABLE FUNCTION

SIT5356AI-FQ-33N0-10.000000Y

Sitime

LVCMOS

SURFACE MOUNT

10

.1 %

NO

1 PPM/FIRST YEAR

CERAMIC

3.63 V

15 pF

3.3 V

LCC10,.12X.2,53/47/43

1.9 ms

5.15mm x 3.35mm x 1.06mm

2.97 V

85 Cel

-40 Cel

GOLD OVER NICKEL

10 MHz

1.9 ns

55/45

e4

SIT5357AI-FQ-33N0-100.000000

Sitime

LVCMOS

SURFACE MOUNT

10

.1 %

NO

0.23 PPM/YEAR

CERAMIC

3.63 V

15 pF

62 mA

3.3 V

LCC10,.12X.2,58/52/48

1.9 ms

5.15mm x 3.35mm x 1.06mm

2.97 V

85 Cel

-40 Cel

100 MHz

1.9 ns

55/45

MIL-STD-883F

SIT5357AI-FQ-33N0-100.000000F

Sitime

LVCMOS

SURFACE MOUNT

10

.1 %

NO

0.23 PPM/YEAR

CERAMIC

3.63 V

15 pF

62 mA

3.3 V

LCC10,.12X.2,53/47/43

1.9 ms

5.15mm x 3.35mm x 1.06mm

2.97 V

85 Cel

-40 Cel

100 MHz

1.9 ns

55/45

822AR-12.8-2SC10I8

Renesas Electronics

HCMOS

SURFACE MOUNT

10

.28 %

NO

1 PPM/YEAR

3.465 V

15 pF

3.3 V

5 ms

7.0mm x 5.0mm x 2.0mm

3.135 V

85 Cel

-40 Cel

12.8 MHz

5 ns

55/45

TCXO Clock Oscillators

TCXO (Temperature Compensated Crystal Oscillator) clock oscillators are electronic devices that generate a stable clock signal for use in various applications, such as communication systems, test and measurement equipment, and timing circuits. They use a crystal oscillator as a frequency reference and a temperature compensation circuit to stabilize the oscillator frequency.

The TCXO clock oscillator works by using a temperature compensation circuit to adjust the frequency of the crystal oscillator, compensating for changes in temperature that can affect the oscillator frequency. This results in a stable and accurate clock signal output.

One of the advantages of TCXO clock oscillators is their high stability and accuracy over a wide temperature range. They can generate clock signals with very low frequency drift and jitter, making them ideal for use in applications that require precise timing.

Another advantage of TCXO clock oscillators is their low phase noise and wide frequency range. They can generate clock signals at frequencies ranging from a few kilohertz to hundreds of megahertz, and have very low phase noise, making them suitable for use in high-precision applications.