TCXO Clock Oscillators

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Part	Manufacturer	Oscillator Type	Mounting Feature	No. of Terminals	Frequency Stability	Frequency Adjustment (Mechanical)	Aging	Package Body Material	Maximum Supply Voltage	Output Load	Maximum Supply Current	Nominal Supply Voltage	Package Equivalence Code	Maximum Rise Time	Physical Dimension	Minimum Supply Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	Nominal Operating Frequency	Maximum Fall Time	Maximum Symmetry (%)	Additional Features	JESD-609 Code
AST3TQ53-T-25.000MHZ-5-C	Abracon	CMOS	SURFACE MOUNT	4	.05 %	NO	1 PPM/FIRST YEAR		3.465 V	15 pF	10 mA	3.3 V	DILCC4,.12,154	6 ms	5mm x 3.2mm x 2mm	3.135 V	85 Cel	-40 Cel		25 MHz	6 ns	55/45
ECS-327TXO-33-TR	Ecs International
SIT5001AI-2E-33E0-48.000000T	Sitime	LVCMOS	SURFACE MOUNT		5 %	NO	2.5 PPM/FIRST YEAR		3.63 V	15 pF		3.3 V		2 ms	3.2mm x 2.5mm x 0.75mm	2.97 V	85 Cel	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	48 MHz	2 ns	55/45	ENABLE/DISABLE FUNCTION; TR	e4
SIT5001AI-GE-18E0-48.000000X	Sitime	LVCMOS
7P-19.200MBP-T	Txc	CMOS	SURFACE MOUNT	6	.28 %	NO	1 PPM/YEAR			15 pF	10 mA	3.3 V	LCC6(UNSPEC)		5.0mm x 3.2mm x 1.5mm		85 Cel	-40 Cel		19.2 MHz			ENABLE/DISABLE FUNCTION
ECS-TXO-3225MV-100-TR	Ecs International
FOX924B-12.000-T1	Fox Electronics	HCMOS	SURFACE MOUNT	4	2.5 %	NO	1 PPM/YEAR		3.465 V	15 pF		3.3 V			5.0mm x 3.2mm x 1.5mm	3.135 V	85 Cel	-30 Cel		12 MHz			TR, 10 INCH
SIT5356AE-FQ-33N0-48.000000Y	Sitime	LVCMOS	SURFACE MOUNT	10	.1 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.63 V	15 pF		3.3 V	LCC10,.12X.2,53/47/43	1.9 ms	5.15mm x 3.35mm x 1.06mm	2.97 V	105 Cel	-40 Cel	GOLD OVER NICKEL	48 MHz	1.9 ns	55/45		e4
ASTMTXK-32.768KHZ-LJ-T10	Abracon	LVCMOS	SURFACE MOUNT	4	20 %	NO	1 PPM/FIRST YEAR		3.63 V	15 pF	.0015 mA		BGA4,2X2,40/16	200 ms	1.54mm x 0.84 mm x 0.6mm	1.5 V	85 Cel	-40 Cel		.032768 MHz	200 ns	52/48
ASTMTXK-32.768KHZ-NJ-T3	Abracon	LVCMOS	SURFACE MOUNT	4	20 %	NO	1 PPM/FIRST YEAR		3.63 V	15 pF	.0015 mA		BGA4,2X2,40/16	200 ms	1.54mm x 0.84 mm x 0.6mm	1.5 V	70 Cel	0 Cel		.032768 MHz	200 ns	52/48
SIT5001AI-2E-33N0-48.000000Y	Sitime	LVCMOS	SURFACE MOUNT		5 %	NO	2.5 PPM/FIRST YEAR		3.63 V	15 pF		3.3 V		2 ms	3.2mm x 2.5mm x 0.75mm	2.97 V	85 Cel	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	48 MHz	2 ns	55/45	TR	e4
SIT5021AI-2DE-33N-156.250000X	Sitime	LVDS	SURFACE MOUNT	6	5 %	NO	2.5 PPM/FIRST YEAR	PLASTIC/EPOXY	3.63 V	100 OHM	55 mA	3.3 V	DILCC6,.2	.6 ms	7.0mm x 5.0mm x 0.9mm	2.97 V	85 Cel	-40 Cel		156.25 MHz	.6 ns	55/45	COMPLEMENTARY OUTPUT
AST3TQ53-T-20.000MHZ-2-C	Abracon	CMOS	SURFACE MOUNT	4	.28 %	NO	1 PPM/FIRST YEAR		3.465 V	15 pF	10 mA	3.3 V	DILCC4,.12,154	6 ms	5mm x 3.2mm x 2mm	3.135 V	85 Cel	-40 Cel		20 MHz	6 ns	55/45
ASTMTXK-32.768KHZ-LJ-T	Abracon	LVCMOS	SURFACE MOUNT	4	20 %	NO	1 PPM/FIRST YEAR		3.63 V	15 pF	.0015 mA		BGA4,2X2,40/16	200 ms	1.54mm x 0.84 mm x 0.6mm	1.5 V	85 Cel	-40 Cel		.032768 MHz	200 ns	52/48
ASTMTXK-32.768KHZ-LJ-T3	Abracon	LVCMOS	SURFACE MOUNT	4	20 %	NO	1 PPM/FIRST YEAR		3.63 V	15 pF	.0015 mA		BGA4,2X2,40/16	200 ms	1.54mm x 0.84 mm x 0.6mm	1.5 V	85 Cel	-40 Cel		.032768 MHz	200 ns	52/48
ASTMTXK-32.768KHZ-LY-T	Abracon	LVCMOS	SURFACE MOUNT	4	10 %	NO	1 PPM/FIRST YEAR		3.63 V	15 pF	.0015 mA		BGA4,2X2,40/16	200 ms	1.54mm x 0.84 mm x 0.6mm	1.5 V	85 Cel	-40 Cel		.032768 MHz	200 ns	52/48
SIT5001AI-2E-33N0-48.000000T	Sitime	LVCMOS	SURFACE MOUNT		5 %	NO	2.5 PPM/FIRST YEAR		3.63 V	15 pF		3.3 V		2 ms	3.2mm x 2.5mm x 0.75mm	2.97 V	85 Cel	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	48 MHz	2 ns	55/45	TR	e4
SIT5021AI-2DE-25N-196.608000X	Sitime	LVDS	SURFACE MOUNT		5 %	NO	2.5 PPM/FIRST YEAR		2.75 V	15 pF		2.5 V		.6 ms	7.0mm x 5.0mm x 0.9mm	2.25 V	85 Cel	-40 Cel		196.608 MHz	.6 ns	55/45	COMPLEMENTRAY OUTPUT; TR
SIT5156AE-FD-33E0-48.000000Y	Sitime	LVCMOS	SURFACE MOUNT	10	2.5 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.63 V	15 pF		3.3 V	LCC10,.12X.2,53/47/43	1.9 ms	5.15mm x 3.35mm x 1.06mm	2.97 V	105 Cel	-40 Cel		48 MHz	1.9 ns	55/45	ENABLE/DISABLE FUNCTION
ECS-TXO-2016MV-500-TR	Ecs International	CMOS	SURFACE MOUNT	4	2.5 %	NO	1 PPM/YEAR	CERAMIC	3.6 V	15 pF	7 mA		LCC4,.06X.08,52/40	5 ms	2mm x 1.6mm x 0.8mm	1.7 V	85 Cel	-40 Cel	Gold (Au)	50 MHz	5 ns	45/55	TRI-STATE; ENABLE/DISABLE FUNCTION	e4
ASGTX-P-10.000MHZ-1-T	Abracon	LVPECL	SURFACE MOUNT	6	1 %	NO	1 PPM/FIRST YEAR		3.465 V			3.3 V		.35 ms	9.0mm x 7.0mm x 2.24mm	3.135 V	70 Cel	-30 Cel		10 MHz	.35 ns	55/45	COMPLEMENTARY OUTPUT; TR, 13 INCH
ASGTX-P-10.000MHZ-1-T2	Abracon	LVPECL	SURFACE MOUNT	6	1 %	NO	1 PPM/FIRST YEAR		3.465 V			3.3 V		.35 ms	9.0mm x 7.0mm x 2.24mm	3.135 V	70 Cel	-30 Cel		10 MHz	.35 ns	55/45	COMPLEMENTARY OUTPUT; TR
AST3TQ-T-16.384MHZ-50-C	Abracon	LVCMOS	SURFACE MOUNT	4	.05 %	NO	1 PPM/FIRST YEAR		3.465 V	15 pF		3.3 V		6 ms	7.0mm x 5.0mm x 1.9mm	3.135 V	85 Cel	-40 Cel		16.384 MHz	6 ns	55/45	BULK
AST3TQ-T-16.384MHZ-50-C-T5	Abracon	LVCMOS	SURFACE MOUNT	4	.05 %	NO	1 PPM/FIRST YEAR		3.465 V	15 pF		3.3 V		6 ms	7.0mm x 5.0mm x 1.9mm	3.135 V	85 Cel	-40 Cel		16.384 MHz	6 ns	55/45	TR, 13 INCH
AST3TQ-T-25.000MHZ-28	Abracon	LVCMOS	SURFACE MOUNT	4	.28 %	NO	1 PPM/FIRST YEAR		3.465 V	15 pF		3.3 V	DILCC4,.2,200	6 ms	7.0mm x 5.0mm x 1.9mm	3.135 V	85 Cel	-40 Cel		25 MHz	6 ns	55/45
DV75C-040.0M	Connor Winfield	LVCMOS	SURFACE MOUNT	4	.28 %	NO		CERAMIC	3.465 V	15 pF	6 mA	3.3 V	LCC4,.2X.28,200/165	8 ms	7mm x 5mm x 2.4mm	3.135 V	85 Cel	-40 Cel		40 MHz	8 ns	55/45
ECS-TXO-5032-160-TR	Ecs International	HCMOS	SURFACE MOUNT	4	2.5 %	NO	1 PPM/YEAR		3.465 V	15 pF	6 mA	3.3 V	LCC4,.12X.2,145/90	10 ms	5mm x 3.2mm x 1.5mm	3.135 V	85 Cel	-30 Cel	Gold (Au)	16 MHz	10 ns	40/60		e4
AST3TQ-20.000MHZ-1-	Abracon	CMOS	SURFACE MOUNT	4	.1 %	NO	1 PPM/FIRST YEAR		3.465 V	15 pF		3.3 V	DILCC4,.2,200	4 ms	7.0mm x 5.0mm x 1.9mm	3.135 V	85 Cel	-40 Cel		20 MHz	4 ns	55/45
AST3TQ-20.000MHZ-2-	Abracon	CMOS	SURFACE MOUNT	4	.28 %	NO	1 PPM/FIRST YEAR		3.465 V	15 pF		3.3 V	DILCC4,.2,200	4 ms	7.0mm x 5.0mm x 1.9mm	3.135 V	90 Cel	-50 Cel		20 MHz	4 ns	55/45
AST3TQ-20.000MHZ-5-	Abracon	CMOS	SURFACE MOUNT	4	.5 %	NO	1 PPM/FIRST YEAR		3.465 V	15 pF		3.3 V	DILCC4,.2,200	4 ms	7.0mm x 5.0mm x 1.9mm	3.135 V	95 Cel	-55 Cel		20 MHz	4 ns	55/45
AST3TQ53-T-20.000MHZ-1-C	Abracon	CMOS	SURFACE MOUNT	4	.1 %	NO	1 PPM/FIRST YEAR		3.465 V	15 pF	10 mA	3.3 V	DILCC4,.12,154	6 ms	5mm x 3.2mm x 2mm	3.135 V	85 Cel	-40 Cel		20 MHz	6 ns	55/45
ATXK-H14-D-32.768KHZ-E50-T3	Abracon	CMOS
DS32KHZN/DIP	Maxim Integrated	CMOS	THROUGH HOLE MOUNT	14	7.5 %	NO	1 PPM/FIRST YEAR		5.5 V	15 pF	.22 mA	5 V	DIP16,.3	200 ms	21.84mm x 11.68mm x 8.01mm	4.5 V	85 Cel	-40 Cel	Matte Tin (Sn) - annealed	.032 MHz	60 ns	55/45		e3
ECS-TXO-2016MV-160-TR	Ecs International	CMOS	SURFACE MOUNT	4	2.5 %	NO	1 PPM/YEAR	CERAMIC	3.6 V	15 pF	4.8 mA		LCC4,.06X.08,52/40	5 ms	2mm x 1.6mm x 0.8mm	1.7 V	85 Cel	-40 Cel	Gold (Au)	16 MHz	5 ns	45/55	TRI-STATE; ENABLE/DISABLE FUNCTION	e4
ECS-TXO-3225MV-240-TR	Ecs International	HCMOS	SURFACE MOUNT	4	2.5 %	NO	1 PPM/YEAR	CERAMIC	3.6 V	15 pF	6 mA		LCC4,.1X.12,87/69	5 ms	3.2mm x 2.5mm x 1mm	1.6 V	85 Cel	-30 Cel	Gold (Au)	24 MHz	5 ns	45/55	TRI-STATE; ENABLE/DISABLE FUNCTION	e4
SIT5000AI-GE-25E0-25.000000X	Sitime	LVCMOS	SURFACE MOUNT	4	5 %	NO	2.5 PPM/FIRST YEAR	PLASTIC	2.75 V	15 pF	33 mA	2.5 V	SOLCC4,.11,49	2 ms	2.5mm X 2mm X 0.75mm	2.25 V	85 Cel	-40 Cel		25 MHz	2 ns	55/45	ENABLE/DISABLE FUNCTION
SIT5356AE-FQ-33E0-50.000000	Sitime	LVCMOS	SURFACE MOUNT	10	.1 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.63 V	15 pF		3.3 V	LCC10,.12X.2,53/47/43	1.9 ms	5.15mm x 3.35mm x 1.06mm	2.97 V	105 Cel	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	50 MHz	1.9 ns	55/45	ENABLE/DISABLE FUNCTION	e4
SIT5356AE-FQ-33E0-50.000000F	Sitime	LVCMOS	SURFACE MOUNT	10	.1 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.63 V	15 pF		3.3 V	LCC10,.12X.2,53/47/43	1.9 ms	5.15mm x 3.35mm x 1.06mm	2.97 V	105 Cel	-40 Cel		50 MHz	1.9 ns	55/45	ENABLE/DISABLE FUNCTION
SIT5356AE-FQ-33E0-50.000000X	Sitime	LVCMOS	SURFACE MOUNT	10	.1 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.63 V	15 pF		3.3 V	LCC10,.12X.2,53/47/43	1.9 ms	5.15mm x 3.35mm x 1.06mm	2.97 V	105 Cel	-40 Cel		50 MHz	1.9 ns	55/45	ENABLE/DISABLE FUNCTION
SIT5356AE-FQ-33E0-50.000000Y	Sitime	LVCMOS	SURFACE MOUNT	10	.1 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.63 V	15 pF		3.3 V	LCC10,.12X.2,53/47/43	1.9 ms	5.15mm x 3.35mm x 1.06mm	2.97 V	105 Cel	-40 Cel	GOLD OVER NICKEL	50 MHz	1.9 ns	55/45	ENABLE/DISABLE FUNCTION	e4
581L200X2ITT	Cts	HCMOS	SURFACE MOUNT		.28 %	NO	3 PPM/20 YEAR		3.465 V	15 pF		3.3 V		6 ms	5.0mm x 3.2mm x 1.65mm	3.135 V	85 Cel	-40 Cel	GOLD OVER NICKEL	20 MHz	6 ns	55/45	TR, 7 INCH	e4
ASGTX-P-16.384MHZ-2	Abracon	LVPECL	SURFACE MOUNT	6	2 %	NO	1 PPM/FIRST YEAR		3.465 V			3.3 V		.35 ms	9.0mm x 7.0mm x 2.24mm	3.135 V	85 Cel	-40 Cel		16.384 MHz	.35 ns	55/45	COMPLEMENTARY OUTPUT; BULK
AST3TQ53-T-16.384MHZ-5-C-T5	Abracon	CMOS	SURFACE MOUNT	4	.05 %	NO	1 PPM/FIRST YEAR		3.465 V	15 pF	10 mA	3.3 V	DILCC4,.12,154	6 ms	5mm x 3.2mm x 2mm	3.135 V	85 Cel	-40 Cel		16.384 MHz	6 ns	55/45
DS32KHZ/DIP	Maxim Integrated	CMOS	THROUGH HOLE MOUNT	14	7.5 %	NO	1 PPM/FIRST YEAR		5.5 V	15 pF	.22 mA	5 V	DIP16,.3	200 ms	21.84mm x 11.68mm x 8.01mm	4.5 V	70 Cel	0 Cel	Tin/Lead (Sn/Pb)	.032 MHz	60 ns	55/45		e0
DS32KHZN/WBGA+	Maxim Integrated	CMOS	SURFACE MOUNT	36	7.5 %	NO	1 PPM/FIRST YEAR		5.5 V	15 pF	.22 mA	5 V	BGA36,8X9,50	200 ms	11.43mm x 10.16mm x 2.56mm	4.5 V	85 Cel	-40 Cel		.032 MHz	60 ns	55/45
DS32KHZN/WBGA	Maxim Integrated	CMOS	SURFACE MOUNT	36	7.5 %	NO	1 PPM/FIRST YEAR		5.5 V	15 pF	.22 mA	5 V	BGA36,8X9,50	200 ms	11.43mm x 10.16mm x 2.56mm	4.5 V	85 Cel	-40 Cel	TIN LEAD	.032 MHz	60 ns	55/45		e0
ECS-327TXO-30-TR	Ecs International	CMOS	SURFACE MOUNT	4	5 %	NO	3 PPM/FIRST YEAR	CERAMIC		15 pF	.0013 mA	3 V	LCC4,.1X.13,71	100 ms	3.28mm x 2.5mm x 1.3mm		85 Cel	-40 Cel		.032768 MHz	100 ns	40/60	ENABLE/DISABLE FUNCTION
ECS-TXO-2016-33-160-TR	Ecs International	HCMOS	SURFACE MOUNT	4	2.5 %	NO	1 PPM/YEAR	CERAMIC		15 pF	4.8 mA	3.3 V	LCC4,.06X.08,53	5 ms	2mm X 1.6mm X 0.8mm		85 Cel	-40 Cel		16 MHz	5 ns	45/55	TRI-STATE

TCXO (Temperature Compensated Crystal Oscillator) clock oscillators are electronic devices that generate a stable clock signal for use in various applications, such as communication systems, test and measurement equipment, and timing circuits. They use a crystal oscillator as a frequency reference and a temperature compensation circuit to stabilize the oscillator frequency.

The TCXO clock oscillator works by using a temperature compensation circuit to adjust the frequency of the crystal oscillator, compensating for changes in temperature that can affect the oscillator frequency. This results in a stable and accurate clock signal output.

One of the advantages of TCXO clock oscillators is their high stability and accuracy over a wide temperature range. They can generate clock signals with very low frequency drift and jitter, making them ideal for use in applications that require precise timing.

Another advantage of TCXO clock oscillators is their low phase noise and wide frequency range. They can generate clock signals at frequencies ranging from a few kilohertz to hundreds of megahertz, and have very low phase noise, making them suitable for use in high-precision applications.