2.5 % TCXO Sine Wave Oscillators 1,100

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Part RoHS Manufacturer Oscillator Type Mounting Feature No. of Terminals Frequency Stability Frequency Adjustment (Mechanical) Aging Package Body Material Maximum Supply Voltage Technology Screening Level Output Impedance Maximum Supply Current Nominal Supply Voltage Power Supplies (V) Package Equivalence Code Sub-Category Physical Dimension Minimum Supply Voltage Maximum Operating Temperature Minimum Operating Temperature Terminal Finish Nominal Operating Frequency Manufacturer Series Qualification Output Level Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

TXETDDSANF-16.000000

Taitien Electronics

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

3.465 V

10000 ohm

1.5 mA

3 V

LCC4,.1X.12,91/67

3.2mm x 2.5mm x 0.9mm

2.66 V

85 Cel

-30 Cel

Gold (Au) - with Nickel (Ni) barrier

16 MHz

.8 V

e4

VTC1-A0CD-16M7772160

Microchip Technology

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/YEAR

5.25 V

10000 ohm

5 V

7.0mm x 5.0mm x 2.0mm

4.75 V

80 Cel

-30 Cel

Gold (Au) - with Nickel (Ni) barrier

16.777216 MHz

.8 V

TR, 7 INCH

e4

ECS-TXO-20CSMV-320-EY-TR

Ecs International

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

CERAMIC

3.465 V

10000 ohm

2.5 mA

LCC4,.06X.08,63/51

2mm x 1.6mm x 0.8mm

1.7 V

85 Cel

-30 Cel

Gold (Au)

32 MHz

.8 V

e4

516L20025CTR

Cts

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

CERAMIC

3.465 V

10000 ohm

2 mA

3.3 V

LCC4,.06X.08,50/38

2.0mm x 1.6mm x 0.8mm

3.135 V

70 Cel

-20 Cel

GOLD OVER NICKEL

20 MHz

.8 V

e4

516L20025DTR

Cts

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

CERAMIC

3.465 V

10000 ohm

2 mA

3.3 V

LCC4,.06X.08,50/38

2.0mm x 1.6mm x 0.8mm

3.135 V

85 Cel

-30 Cel

TIN SILVER COPPER OVER NICKEL

20 MHz

.8 V

516L20025ITR

Cts

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

CERAMIC

3.465 V

10000 ohm

2 mA

3.3 V

LCC4,.06X.08,50/38

2.0mm x 1.6mm x 0.8mm

3.135 V

85 Cel

-40 Cel

Gold (Au) - with Nickel (Ni) barrier

20 MHz

.8 V

e4

FT5CNDPK20.0-T1

Abracon

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/YEAR

3.15 V

10000 ohm

3 V

5.0mm x 3.2mm x 1.5mm

2.85 V

85 Cel

-30 Cel

GOLD OVER NICKEL

20 MHz

.8 V

TR

e4

532L25DT19M4400

Cts

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

3.47 V

10000 ohm

3.3 V

5.0mm x 3.2mm x 1.6mm

3.14 V

85 Cel

-30 Cel

Gold (Au) - with Nickel (Ni) barrier

19.44 MHz

.8 V

TAPE AND REEL

e4

FT5CNDPK12.8-T1

Abracon

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/YEAR

3.15 V

10000 ohm

3 V

5.0mm x 3.2mm x 1.5mm

2.85 V

75 Cel

-20 Cel

GOLD OVER NICKEL

12.8 MHz

.8 V

TR

e4

WT255GO0016.369000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

2.52 V

11000 ohm

2.4 V

2.5mm x 2.0mm x 0.8mm

2.28 V

75 Cel

-30 Cel

16.369 MHz

.8 V

JT3251J0016.369000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

3.465 V

10000 ohm

3.3 V

3.2mm x 2.5mm x 1.0mm

3.135 V

85 Cel

-30 Cel

16.369 MHz

.8 V

WT3252E0040.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

2.625 V

10000 ohm

2.5 V

3.2mm x 2.5mm x 1.2mm

2.375 V

70 Cel

-20 Cel

40 MHz

.8 V

JT255ET0025.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

CERAMIC

2.9925 V

10000 ohm

1.5 mA

2.85 V

2.85

DILCC4,.08,75

Other Oscillators

2.5mm x 2.0mm x 0.8mm

2.7075 V

85 Cel

-40 Cel

25 MHz

Not Qualified

.8 V

13 MHz

52 MHz

JT3254T0019.200000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

1.575 V

10000 ohm

1.5 V

3.2mm x 2.5mm x 1.0mm

1.425 V

85 Cel

-40 Cel

19.2 MHz

.8 V

JT255BT0016.369000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

CERAMIC

3.15 V

10000 ohm

1.5 mA

3 V

3

DILCC4,.08,75

Other Oscillators

2.5mm x 2.0mm x 0.8mm

2.85 V

85 Cel

-40 Cel

16.369 MHz

Not Qualified

.8 V

13 MHz

52 MHz

JT325GJ0016.369000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

2.52 V

10000 ohm

2.4 V

3.2mm x 2.5mm x 1.0mm

2.28 V

85 Cel

-30 Cel

16.369 MHz

.8 V

WT255GO0025.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

2.52 V

11000 ohm

2.4 V

2.5mm x 2.0mm x 0.8mm

2.28 V

75 Cel

-30 Cel

25 MHz

.8 V

JT2551O0026.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

CERAMIC

3.465 V

10000 ohm

1.5 mA

3.3 V

3.3

DILCC4,.08,75

Other Oscillators

2.5mm x 2.0mm x 0.8mm

3.135 V

75 Cel

-30 Cel

26 MHz

Not Qualified

.8 V

13 MHz

52 MHz

JT255DO0016.369000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

CERAMIC

2.835 V

10000 ohm

1.5 mA

2.7 V

2.7

DILCC4,.08,75

Other Oscillators

2.5mm x 2.0mm x 0.8mm

2.565 V

75 Cel

-30 Cel

16.369 MHz

Not Qualified

.8 V

13 MHz

52 MHz

WT255FJ0016.369000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

2.8875 V

11000 ohm

2.75 V

2.5mm x 2.0mm x 0.8mm

2.6125 V

85 Cel

-30 Cel

16.369 MHz

.8 V

JT255GE0040.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

CERAMIC

2.52 V

10000 ohm

2 mA

2.4 V

2.4

DILCC4,.08,75

Other Oscillators

2.5mm x 2.0mm x 0.8mm

2.28 V

70 Cel

-20 Cel

40 MHz

Not Qualified

.8 V

13 MHz

52 MHz

WT2553T0026.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

1.89 V

11000 ohm

1.8 V

2.5mm x 2.0mm x 0.8mm

1.71 V

85 Cel

-40 Cel

26 MHz

.8 V

WT2551O0019.200000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

3.465 V

11000 ohm

3.3 V

2.5mm x 2.0mm x 0.8mm

3.135 V

75 Cel

-30 Cel

19.2 MHz

.8 V

JT2554J0016.369000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

1.575 V

10000 ohm

1.5 V

2.5mm x 2.0mm x 0.8mm

1.425 V

85 Cel

-30 Cel

16.369 MHz

.8 V

WT3254E0016.367667

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

1.575 V

10000 ohm

1.5 V

3.2mm x 2.5mm x 1.2mm

1.425 V

70 Cel

-20 Cel

16.367667 MHz

.8 V

JT255CJ0016.369000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

CERAMIC

2.94 V

10000 ohm

1.5 mA

2.8 V

2.8

DILCC4,.08,75

Other Oscillators

2.5mm x 2.0mm x 0.8mm

2.66 V

85 Cel

-30 Cel

16.369 MHz

Not Qualified

.8 V

13 MHz

52 MHz

JT2551O0052.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

3.465 V

10000 ohm

3.3 V

2.5mm x 2.0mm x 0.8mm

3.135 V

75 Cel

-30 Cel

52 MHz

.8 V

WT2552E0019.200000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

2.625 V

11000 ohm

2.5 V

2.5mm x 2.0mm x 0.8mm

2.375 V

70 Cel

-20 Cel

19.2 MHz

.8 V

WT3252J0025.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

2.625 V

10000 ohm

2.5 V

3.2mm x 2.5mm x 1.2mm

2.375 V

85 Cel

-30 Cel

25 MHz

.8 V

JT255EO0016.369000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

CERAMIC

2.9925 V

10000 ohm

1.5 mA

2.85 V

2.85

DILCC4,.08,75

Other Oscillators

2.5mm x 2.0mm x 0.8mm

2.7075 V

75 Cel

-30 Cel

16.369 MHz

Not Qualified

.8 V

13 MHz

52 MHz

WT255CJ0026.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

2.97 V

11000 ohm

2.8 V

2.5mm x 2.0mm x 0.8mm

2.66 V

85 Cel

-30 Cel

26 MHz

.8 V

JT325BT0052.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

3.15 V

10000 ohm

3 V

3.2mm x 2.5mm x 1.0mm

2.85 V

85 Cel

-40 Cel

52 MHz

.8 V

JT255DT0052.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

2.835 V

10000 ohm

2.7 V

2.5mm x 2.0mm x 0.8mm

2.565 V

85 Cel

-40 Cel

52 MHz

.8 V

WT3254J0040.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

1.575 V

10000 ohm

1.5 V

3.2mm x 2.5mm x 1.2mm

1.425 V

85 Cel

-30 Cel

40 MHz

.8 V

JT255GJ0016.367667

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

CERAMIC

2.52 V

10000 ohm

1.5 mA

2.4 V

2.4

DILCC4,.08,75

Other Oscillators

2.5mm x 2.0mm x 0.8mm

2.28 V

85 Cel

-30 Cel

16.367667 MHz

Not Qualified

.8 V

13 MHz

52 MHz

JT325GJ0025.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

2.52 V

10000 ohm

2.4 V

3.2mm x 2.5mm x 1.0mm

2.28 V

85 Cel

-30 Cel

25 MHz

.8 V

JT325CE0040.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

2.94 V

10000 ohm

2.8 V

3.2mm x 2.5mm x 1.0mm

2.66 V

70 Cel

-20 Cel

40 MHz

.8 V

WT255DE0016.367667

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

2.835 V

11000 ohm

2.7 V

2.5mm x 2.0mm x 0.8mm

2.565 V

70 Cel

-20 Cel

16.367667 MHz

.8 V

JT255CT0026.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

CERAMIC

2.94 V

10000 ohm

1.5 mA

2.8 V

2.8

DILCC4,.08,75

Other Oscillators

2.5mm x 2.0mm x 0.8mm

2.66 V

85 Cel

-40 Cel

26 MHz

Not Qualified

.8 V

13 MHz

52 MHz

WT325DT0026.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

2.835 V

10000 ohm

2.7 V

3.2mm x 2.5mm x 1.2mm

2.565 V

85 Cel

-40 Cel

26 MHz

.8 V

WT255FT0019.200000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

2.8875 V

11000 ohm

2.75 V

2.5mm x 2.0mm x 0.8mm

2.6125 V

85 Cel

-40 Cel

19.2 MHz

.8 V

JT255EO0019.200000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

CERAMIC

2.9925 V

10000 ohm

1.5 mA

2.85 V

2.85

DILCC4,.08,75

Other Oscillators

2.5mm x 2.0mm x 0.8mm

2.7075 V

75 Cel

-30 Cel

19.2 MHz

Not Qualified

.8 V

13 MHz

52 MHz

WT325CJ0025.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

2.94 V

10000 ohm

2.8 V

3.2mm x 2.5mm x 1.2mm

2.66 V

85 Cel

-30 Cel

25 MHz

.8 V

WT325BJ0016.367667

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

3.15 V

10000 ohm

3 V

3.2mm x 2.5mm x 1.2mm

2.85 V

85 Cel

-30 Cel

16.367667 MHz

.8 V

JT255DT0040.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

CERAMIC

2.835 V

10000 ohm

2 mA

2.7 V

2.7

DILCC4,.08,75

Other Oscillators

2.5mm x 2.0mm x 0.8mm

2.565 V

85 Cel

-40 Cel

40 MHz

Not Qualified

.8 V

13 MHz

52 MHz

WT255EE0016.367667

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

2.9925 V

11000 ohm

2.85 V

2.5mm x 2.0mm x 0.8mm

2.3575 V

70 Cel

-20 Cel

16.367667 MHz

.8 V

JT3253E0019.200000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

1.89 V

10000 ohm

1.8 V

3.2mm x 2.5mm x 1.0mm

1.71 V

70 Cel

-20 Cel

19.2 MHz

.8 V

WT325CJ0016.367667

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

2.94 V

10000 ohm

2.8 V

3.2mm x 2.5mm x 1.2mm

2.66 V

85 Cel

-30 Cel

16.367667 MHz

.8 V

TCXO Sine Wave Oscillators

TCXO (Temperature Compensated Crystal Oscillator) sine wave oscillators are electronic devices that generate a stable sine wave signal for use in various applications, such as communication systems, test and measurement equipment, and frequency synthesizers. They use a crystal oscillator as a frequency reference and a temperature compensation circuit to stabilize the oscillator frequency.

The TCXO sine wave oscillator works by using a temperature compensation circuit to adjust the frequency of the crystal oscillator, compensating for changes in temperature that can affect the oscillator frequency. This results in a stable and accurate sine wave signal output.

An advantages of TCXO sine wave oscillators is their high stability and accuracy over a wide temperature range. They can generate sine wave signals with very low frequency drift and jitter, making them ideal for use in applications that require precise timing.