Part | RoHS | Manufacturer | Oscillator Type | Mounting Feature | No. of Terminals | Frequency Stability | Frequency Adjustment (Mechanical) | Package Body Material | Maximum Supply Voltage | Technology | Output Load | Maximum Supply Current | Nominal Supply Voltage | Power Supplies (V) | Package Equivalence Code | Maximum Rise Time | Linearity | Sub-Category | Physical Dimension | Minimum Supply Voltage | Maximum Operating Temperature | Minimum Control Voltage | Minimum Operating Temperature | Terminal Finish | Frequency Deviation or Pullability | Nominal Operating Frequency | Maximum Control Voltage | Maximum Fall Time | Maximum Symmetry (%) | Manufacturer Series | Qualification | Maximum Output Low Current | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Silicon Labs |
CMOS |
SURFACE MOUNT |
6 |
20 % |
NO |
PLASTIC/EPOXY |
3.63 V |
15 pF |
75 mA |
3.3 V |
3.3 |
DILCC6,.2 |
10 % |
Other Oscillators |
7.0mm x 5.0mm x 1.85mm |
2.97 V |
85 Cel |
0 V |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
130 ppm |
125 MHz |
3.3 V |
55/45 |
SI550 |
Not Qualified |
32 Amp |
COMPLEMENTARY OUTPUT; TRI-STATE; ENABLE/DISABLE FUNCTION; TRAY |
e4 |
10 MHz |
160 MHz |
||||
|
Silicon Labs |
CMOS |
SURFACE MOUNT |
6 |
20 % |
NO |
PLASTIC/EPOXY |
3.63 V |
15 pF |
75 mA |
3.3 V |
3.3 |
DILCC6,.2 |
10 % |
Other Oscillators |
7.0mm x 5.0mm x 1.85mm |
2.97 V |
85 Cel |
0 V |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
375 ppm |
107.964 MHz |
3.3 V |
55/45 |
SI550 |
Not Qualified |
32 Amp |
COMPLEMENTARY OUTPUT; TRI-STATE; ENABLE/DISABLE FUNCTION; TRAY |
e4 |
10 MHz |
160 MHz |
||||
|
Silicon Labs |
CMOS |
SURFACE MOUNT |
6 |
20 % |
NO |
PLASTIC/EPOXY |
3.63 V |
15 pF |
75 mA |
3.3 V |
3.3 |
DILCC6,.2 |
10 % |
Other Oscillators |
7.0mm x 5.0mm x 1.85mm |
2.97 V |
85 Cel |
0 V |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
375 ppm |
107.964 MHz |
3.3 V |
55/45 |
SI550 |
Not Qualified |
32 Amp |
COMPLEMENTARY OUTPUT; TRI-STATE; ENABLE/DISABLE FUNCTION; TAPE AND REEL |
e4 |
10 MHz |
160 MHz |
||||
|
Microchip Technology |
CMOS |
SURFACE MOUNT |
6 |
20 % |
NO |
3.465 V |
15 pF |
25 mA |
3.3 V |
DILCC6,.2 |
5 ms |
5 % |
7.0mm x 5.0mm x 2.09mm |
3.135 V |
85 Cel |
.3 V |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
30 ppm |
125 MHz |
3 V |
5 ns |
55/45 |
e4 |
|||||||||||
|
Silicon Labs |
CMOS |
SURFACE MOUNT |
6 |
20 % |
NO |
PLASTIC/EPOXY |
3.63 V |
15 pF |
75 mA |
3.3 V |
3.3 |
DILCC6,.2 |
10 % |
Other Oscillators |
7.0mm x 5.0mm x 1.8mm |
2.97 V |
85 Cel |
0 V |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
12 ppm |
40 MHz |
3.3 V |
55/45 |
SI550 |
Not Qualified |
32 Amp |
TAPE AND REEL |
e4 |
10 MHz |
160 MHz |
||||
|
Microsemi |
CMOS |
SURFACE MOUNT |
50 % |
NO |
3.63 V |
50 pF |
3.3 V |
200 ms |
7mm x 5mm x 1.4mm |
2.97 V |
85 Cel |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
33.333 MHz |
200 ns |
45/55 |
TRISTATE ENABLE/DISABLE FUNCTION; TAPE AND REEL |
e4 |
|||||||||||||||||
|
Silicon Labs |
CMOS |
SURFACE MOUNT |
6 |
20 % |
NO |
PLASTIC/EPOXY |
3.63 V |
15 pF |
75 mA |
3.3 V |
3.3 |
DILCC6,.2 |
10 % |
Other Oscillators |
7.0mm x 5.0mm x 1.85mm |
2.97 V |
85 Cel |
0 V |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
130 ppm |
125 MHz |
3.3 V |
55/45 |
SI550 |
Not Qualified |
32 Amp |
COMPLEMENTARY OUTPUT; TRI-STATE; ENABLE/DISABLE FUNCTION; TAPE AND REEL |
e4 |
10 MHz |
160 MHz |
||||
Silicon Labs |
CMOS |
SURFACE MOUNT |
20 % |
NO |
3.465 V |
15 pF |
1.5 ms |
1.5 % |
5.0mm x 3.2mm x 1.33mm |
1.71 V |
85 Cel |
.18 V |
-40 Cel |
70 ppm |
61.44 MHz |
2.97 V |
1.5 ns |
55/45 |
TRI-STATE; ENABLE/DISABLE FUNCTION; TR |
|||||||||||||||||
|
Microsemi |
CMOS |
SURFACE MOUNT |
50 % |
NO |
3.63 V |
15 pF |
3.3 V |
200 ms |
7mm x 5mm x 1.4mm |
2.97 V |
85 Cel |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
125 MHz |
200 ns |
45/55 |
TRISTATE ENABLE/DISABLE FUNCTION; TAPE AND REEL |
e4 |
|||||||||||||||||
|
Seiko Epson |
CMOS |
SURFACE MOUNT |
37 % |
NO |
3.63 V |
15 pF |
3.3 V |
4 ms |
3.2mm x 2.5mm x 1.05mm |
3 V |
85 Cel |
0 V |
-40 Cel |
GOLD |
140 ppm |
27 MHz |
3.3 V |
4 ns |
60/40 |
TR |
e4 |
||||||||||||||
|
Silicon Labs |
CMOS |
SURFACE MOUNT |
20 % |
NO |
3.63 V |
15 pF |
3.3 V |
10 % |
7.0mm x 5.0mm x 1.8mm |
2.97 V |
85 Cel |
0 V |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
375 ppm |
125 MHz |
3.3 V |
55/45 |
TRI-STATE; ENABLE/DISABLE FUNCTION; TRAY |
e4 |
|||||||||||||||
Silicon Labs |
CMOS |
SURFACE MOUNT |
20 % |
NO |
3.465 V |
15 pF |
1.5 ms |
1.5 % |
5.0mm x 3.2mm x 1.33mm |
1.71 V |
85 Cel |
.18 V |
-40 Cel |
70 ppm |
61.44 MHz |
2.97 V |
1.5 ns |
55/45 |
TRI-STATE; ENABLE/DISABLE FUNCTION; TAPE |
|||||||||||||||||
|
Silicon Labs |
CMOS |
SURFACE MOUNT |
6 |
20 % |
NO |
PLASTIC/EPOXY |
3.63 V |
15 pF |
75 mA |
3.3 V |
3.3 |
DILCC6,.2 |
10 % |
Other Oscillators |
7.0mm x 5.0mm x 1.8mm |
2.97 V |
85 Cel |
0 V |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
185 ppm |
27 MHz |
3.3 V |
55/45 |
SI550 |
Not Qualified |
32 Amp |
TAPE AND REEL |
e4 |
10 MHz |
160 MHz |
||||
|
Silicon Labs |
CMOS |
SURFACE MOUNT |
8 |
50 % |
NO |
3.63 V |
15 pF |
98 mA |
3.3 V |
LCC8,.2X.28,100 |
10 % |
7.0mm x 5.0mm x 1.8mm |
2.97 V |
85 Cel |
0 V |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
150 ppm |
3.3 V |
55/45 |
TRI-STATE; ENABLE/DISABLE FUNCTION; MIL-STD-883 |
e4 |
10 MHz |
160 MHz |
|||||||||||
|
Nihon Dempa Kogyo |
CMOS |
SURFACE MOUNT |
6 |
50 % |
NO |
CERAMIC |
3.63 V |
15 pF |
35 mA |
3.3 V |
DILCC6,.2 |
7.0mm x 5.0mm x 1.6mm |
2.97 V |
85 Cel |
.15 V |
-40 Cel |
100 ppm |
74.1758 MHz |
3.15 V |
55/45 |
ENABLE/DISABLE FUNCTION |
||||||||||||||
Microchip Technology |
CMOS |
SURFACE MOUNT |
6 |
NO |
3.63 V |
15 pF |
5 % |
3.0mm x 1.7mm x 1.35mm |
2.25 V |
85 Cel |
0 V |
-40 Cel |
300 ppm |
3.3 V |
55/45 |
TRI-STATE; ENABLE/DISABLE FUNCTION; TUBE |
36 MHz |
130 MHz |
||||||||||||||||||
|
Diodes Incorporated |
CMOS |
SURFACE MOUNT |
6 |
50 % |
NO |
CERAMIC |
3.63 V |
30 pF |
35 mA |
3.3 V |
3.3 |
DILCC6,.2 |
4 ms |
10 % |
Other Oscillators |
7.0mm x 5.0mm x 2.0mm |
2.97 V |
85 Cel |
.3 V |
-40 Cel |
Gold (Au) |
50 ppm |
32 MHz |
3 V |
4 ns |
60/40 |
ST1317 |
Not Qualified |
ENABLE/DISABLE FUNCTION; TAPE AND REEL |
e4 |
32 MHz |
125 MHz |
|||
Diodes Incorporated |
CMOS |
THROUGH HOLE MOUNT |
6 |
50 % |
NO |
30 PF |
5 V |
5 ms |
5 % |
70 Cel |
.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
4.5 V |
5 ns |
45/55 |
e0 |
28.6363 MHz |
70 MHz |
|||||||||||||||||
Diodes Incorporated |
CMOS |
SURFACE MOUNT |
25 % |
NO |
30 PF |
5 V |
5 ms |
5 % |
70 Cel |
.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
4.5 V |
5 ns |
45/55 |
S1500 |
e0 |
28.6363 MHz |
70 MHz |
|||||||||||||||||
Diodes Incorporated |
CMOS |
THROUGH HOLE MOUNT |
4 |
25 % |
NO |
30 PF |
5 V |
6 ms |
10 % |
13mm x 13mm x 5.08mm |
70 Cel |
.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
4.5 V |
6 ns |
45/55 |
e0 |
1.5 MHz |
28.6363 MHz |
||||||||||||||||
Diodes Incorporated |
CMOS |
SURFACE MOUNT |
25 % |
NO |
15 PF |
5 V |
3 ms |
10 % |
70 Cel |
.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
4.5 V |
3 ns |
40/60 |
S1500 |
e0 |
70 MHz |
100 MHz |
|||||||||||||||||
Diodes Incorporated |
CMOS |
THROUGH HOLE MOUNT |
6 |
50 % |
NO |
30 PF |
5 V |
8 ms |
5 % |
21mm x 13mm x 5.08mm |
70 Cel |
.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
4.5 V |
6 ns |
45/55 |
e0 |
1.5 MHz |
28.6363 MHz |
||||||||||||||||
Diodes Incorporated |
CMOS |
THROUGH HOLE MOUNT |
6 |
50 % |
NO |
30 PF |
5 V |
8 ms |
5 % |
85 Cel |
.5 V |
-40 Cel |
Tin/Lead (Sn/Pb) |
4.5 V |
6 ns |
45/55 |
e0 |
1.5 MHz |
28.6363 MHz |
|||||||||||||||||
Diodes Incorporated |
CMOS |
THROUGH HOLE MOUNT |
4 |
50 % |
NO |
15 PF |
5 V |
3 ms |
5 % |
85 Cel |
.5 V |
-40 Cel |
Tin/Lead (Sn/Pb) |
4.5 V |
3 ns |
40/60 |
e0 |
70 MHz |
100 MHz |
|||||||||||||||||
|
Diodes Incorporated |
CMOS |
SURFACE MOUNT |
6 |
50 % |
NO |
CERAMIC |
3.63 V |
30 pF |
35 mA |
3.3 V |
3.3 |
DILCC6,.2 |
4 ms |
10 % |
Other Oscillators |
7.0mm x 5.0mm x 2.0mm |
2.97 V |
85 Cel |
.3 V |
-40 Cel |
Gold (Au) |
100 ppm |
125 MHz |
3 V |
4 ns |
60/40 |
ST1317 |
Not Qualified |
ENABLE/DISABLE FUNCTION; TAPE AND REEL |
e4 |
32 MHz |
125 MHz |
|||
Diodes Incorporated |
CMOS |
THROUGH HOLE MOUNT |
4 |
25 % |
NO |
15 PF |
5 V |
3 ms |
5 % |
70 Cel |
.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
4.5 V |
3 ns |
40/60 |
e0 |
70 MHz |
100 MHz |
|||||||||||||||||
|
Diodes Incorporated |
CMOS |
SURFACE MOUNT |
6 |
50 % |
NO |
3.63 V |
30 pF |
3.3 V |
8 ms |
10 % |
7.0mm x 5.0mm x 2.0mm |
2.97 V |
85 Cel |
.3 V |
-40 Cel |
100 ppm |
25 MHz |
3 V |
8 ns |
55/45 |
ENABLE/DISABLE FUNCTION; TR |
||||||||||||||
Diodes Incorporated |
CMOS |
SURFACE MOUNT |
50 % |
NO |
15 PF |
5 V |
3 ms |
5 % |
85 Cel |
.5 V |
-40 Cel |
Tin/Lead (Sn/Pb) |
4.5 V |
3 ns |
40/60 |
S1500 |
e0 |
70 MHz |
100 MHz |
|||||||||||||||||
Diodes Incorporated |
CMOS |
THROUGH HOLE MOUNT |
6 |
25 % |
NO |
30 PF |
5 V |
5 ms |
5 % |
70 Cel |
.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
4.5 V |
5 ns |
45/55 |
e0 |
28.6363 MHz |
70 MHz |
|||||||||||||||||
Diodes Incorporated |
CMOS |
THROUGH HOLE MOUNT |
6 |
50 % |
NO |
15 PF |
5 V |
3 ms |
5 % |
85 Cel |
.5 V |
-40 Cel |
Tin/Lead (Sn/Pb) |
4.5 V |
3 ns |
40/60 |
e0 |
70 MHz |
100 MHz |
|||||||||||||||||
Diodes Incorporated |
CMOS |
SURFACE MOUNT |
50 % |
NO |
30 pF |
5 V |
8 ms |
5 % |
70 Cel |
.5 V |
0 Cel |
4.5 V |
6 ns |
45/55 |
S1500 |
1.5 MHz |
28.6363 MHz |
|||||||||||||||||||
Diodes Incorporated |
CMOS |
THROUGH HOLE MOUNT |
4 |
50 % |
NO |
15 PF |
5 V |
3 ms |
10 % |
70 Cel |
.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
4.5 V |
3 ns |
40/60 |
e0 |
70 MHz |
100 MHz |
|||||||||||||||||
Diodes Incorporated |
CMOS |
THROUGH HOLE MOUNT |
5 |
25 % |
NO |
30 PF |
5 V |
6 ms |
10 % |
13mm x 13mm x 5.08mm |
70 Cel |
.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
4.5 V |
6 ns |
45/55 |
e0 |
1.5 MHz |
28.6363 MHz |
||||||||||||||||
Diodes Incorporated |
CMOS |
SURFACE MOUNT |
25 % |
NO |
15 PF |
5 V |
3 ms |
10 % |
70 Cel |
.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
4.5 V |
3 ns |
40/60 |
S1500 |
e0 |
70 MHz |
100 MHz |
|||||||||||||||||
Diodes Incorporated |
CMOS |
SURFACE MOUNT |
25 % |
NO |
30 PF |
5 V |
6 ms |
5 % |
70 Cel |
.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
4.5 V |
6 ns |
45/55 |
S1509 |
e0 |
1.5 MHz |
28.6363 MHz |
|||||||||||||||||
Diodes Incorporated |
CMOS |
THROUGH HOLE MOUNT |
5 |
50 % |
NO |
30 PF |
5 V |
6 ms |
10 % |
13mm x 13mm x 5.08mm |
85 Cel |
.5 V |
-40 Cel |
Tin/Lead (Sn/Pb) |
4.5 V |
6 ns |
45/55 |
e0 |
1.5 MHz |
28.6363 MHz |
||||||||||||||||
Diodes Incorporated |
CMOS |
THROUGH HOLE MOUNT |
4 |
25 % |
NO |
30 PF |
5 V |
5 ms |
10 % |
70 Cel |
.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
4.5 V |
5 ns |
45/55 |
e0 |
28.6363 MHz |
70 MHz |
|||||||||||||||||
Diodes Incorporated |
CMOS |
SURFACE MOUNT |
20 % |
NO |
30 PF |
5 V |
8 ms |
10 % |
70 Cel |
.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
4.5 V |
6 ns |
45/55 |
S1500 |
e0 |
1.5 MHz |
28.6363 MHz |
|||||||||||||||||
Diodes Incorporated |
CMOS |
SURFACE MOUNT |
50 % |
NO |
30 PF |
5 V |
8 ms |
10 % |
85 Cel |
.5 V |
-40 Cel |
Tin/Lead (Sn/Pb) |
4.5 V |
6 ns |
45/55 |
S1500 |
e0 |
1.5 MHz |
28.6363 MHz |
|||||||||||||||||
Diodes Incorporated |
CMOS |
THROUGH HOLE MOUNT |
6 |
20 % |
NO |
30 PF |
5 V |
8 ms |
5 % |
70 Cel |
.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
4.5 V |
6 ns |
45/55 |
e0 |
1.5 MHz |
28.6363 MHz |
|||||||||||||||||
Diodes Incorporated |
CMOS |
SURFACE MOUNT |
25 % |
NO |
30 PF |
5 V |
8 ms |
5 % |
70 Cel |
.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
4.5 V |
6 ns |
45/55 |
S1500 |
e0 |
1.5 MHz |
28.6363 MHz |
|||||||||||||||||
Diodes Incorporated |
CMOS |
THROUGH HOLE MOUNT |
4 |
50 % |
NO |
30 PF |
5 V |
8 ms |
10 % |
21mm x 13mm x 5.08mm |
85 Cel |
.5 V |
-40 Cel |
Tin/Lead (Sn/Pb) |
4.5 V |
6 ns |
45/55 |
e0 |
1.5 MHz |
28.6363 MHz |
||||||||||||||||
Diodes Incorporated |
CMOS |
THROUGH HOLE MOUNT |
6 |
25 % |
NO |
30 PF |
5 V |
8 ms |
10 % |
21mm x 13mm x 5.08mm |
70 Cel |
.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
4.5 V |
6 ns |
45/55 |
e0 |
1.5 MHz |
28.6363 MHz |
||||||||||||||||
Diodes Incorporated |
CMOS |
THROUGH HOLE MOUNT |
6 |
50 % |
NO |
30 PF |
5 V |
8 ms |
10 % |
21mm x 13mm x 5.08mm |
70 Cel |
.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
4.5 V |
6 ns |
45/55 |
e0 |
1.5 MHz |
28.6363 MHz |
||||||||||||||||
Diodes Incorporated |
CMOS |
SURFACE MOUNT |
20 % |
NO |
30 PF |
5 V |
8 ms |
5 % |
70 Cel |
.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
4.5 V |
6 ns |
45/55 |
S1500 |
e0 |
1.5 MHz |
28.6363 MHz |
|||||||||||||||||
Diodes Incorporated |
CMOS |
THROUGH HOLE MOUNT |
4 |
25 % |
NO |
30 PF |
5 V |
8 ms |
10 % |
21mm x 13mm x 5.08mm |
70 Cel |
.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
4.5 V |
6 ns |
45/55 |
e0 |
1.5 MHz |
28.6363 MHz |
||||||||||||||||
Diodes Incorporated |
CMOS |
THROUGH HOLE MOUNT |
4 |
50 % |
NO |
30 PF |
5 V |
5 ms |
10 % |
85 Cel |
.5 V |
-40 Cel |
Tin/Lead (Sn/Pb) |
4.5 V |
5 ns |
45/55 |
e0 |
28.6363 MHz |
70 MHz |
|||||||||||||||||
Diodes Incorporated |
CMOS |
SURFACE MOUNT |
50 % |
NO |
30 PF |
5 V |
5 ms |
10 % |
70 Cel |
.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
4.5 V |
5 ns |
45/55 |
S1500 |
e0 |
28.6363 MHz |
70 MHz |
Voltage Controlled Crystal Oscillators (VCXOs) are electronic devices that generate a stable clock signal with a frequency that can be controlled using a voltage input. They use a crystal resonator as the frequency-determining element, which is voltage-tuned using a varactor diode or a voltage-controlled amplifier. VCXOs offer several advantages in electronic circuit design.
One of the main benefits of VCXOs is their ability to generate a stable and precise clock signal that can be adjusted in real-time using a control voltage. This makes them suitable for use in applications that require precise timing, such as in digital signal processing and telecommunications. VCXOs can generate frequencies ranging from a few megahertz to several hundred megahertz, making them suitable for various electronic circuits.
VCXOs also offer a low phase noise, which is important in applications that require a clean and stable clock signal. The low phase noise of VCXOs makes them ideal for use in communication systems, network equipment, and instrumentation.
Finally, VCXOs have a relatively simple design and are easy to integrate into electronic systems. They are available in a range of package sizes and configurations, allowing them to be used in various applications. This makes them a cost-effective solution for frequency generation in electronic circuits.