15 % XO Clock Oscillators 107

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Part	Manufacturer	Oscillator Type	Mounting Feature	No. of Terminals	Frequency Stability	Frequency Adjustment (Mechanical)	Package Body Material	Maximum Supply Voltage	Technology	Screening Level	Output Load	Maximum Supply Current	Nominal Supply Voltage	Package Equivalence Code	Maximum Rise Time	Physical Dimension	Minimum Supply Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	Nominal Operating Frequency	Maximum Fall Time	Maximum Symmetry (%)	Maximum Output Low Current	Additional Features	JESD-609 Code
SG-8101CA25.0000M-TBGPA0	Seiko Epson	CMOS	SURFACE MOUNT	4	15 %	NO		3.63 V		IATF 16949	15 pF			DILCC4,.2,200	6 ms	7.0mm x 5.0mm x 1.3 mm	1.62 V	85 Cel	-40 Cel	GOLD	25 MHz	6 ns	55/45	3 Amp	ENABLE/DISABLE FUNCTION	e4
ECS-2520S33-260-EN-TR	Ecs International	HCMOS	SURFACE MOUNT	4	15 %	NO	CERAMIC	3.63 V			15 pF	7 mA	3.3 V	LCC4,.08X.1,68/52	5 ms	2.5mm x 2.0mm x 0.9mm	2.97 V	85 Cel	-40 Cel	Gold (Au)	26 MHz	5 ns	45/55		TRI-STATE; ENABLE/DISABLE FUNCTION	e4
KC2520C40.0000C2LE00	Kyocera	CMOS	SURFACE MOUNT	4	15 %	NO		3.63 V			15 pF				4 ms	2.5mm x 2.0mm x 0.7mm	2.25 V	85 Cel	-40 Cel	Nickel/Gold (Ni/Au)	40 MHz	4 ns	45/55		ENABLE/DISABLE FUNCTION; TAPE AND REEL	e4
SG-8101CA80.0000M-TBGPAB	Seiko Epson	CMOS	SURFACE MOUNT	4	15 %	NO		3.63 V		IATF 16949	15 pF			DILCC4,.2,200	3 ms	7.0mm x 5.0mm x 1.3 mm	1.62 V	85 Cel	-40 Cel	Gold (Au)	80 MHz	3 ns	55/45	5 Amp	ENABLE/DISABLE FUNCTION	e4
SG-8101CB100.0000M-TBGPAB	Seiko Epson	CMOS	SURFACE MOUNT	4	15 %	NO		3.63 V		IATF 16949	15 pF			DILCC4,.12	3 ms	5.0mm x 3.2mm x 1.1mm	1.62 V	85 Cel	-40 Cel	Gold (Au)	100 MHz	3 ns	55/45	5 Amp	ENABLE/DISABLE FUNCTION	e4
ASAKMPD5-32.768KHZT3	Abracon	CMOS	SURFACE MOUNT		15 %	NO		3.63 V			15 pF				200 ms	1.6mm x 1.2mm x 0.6mm	1.6 V	85 Cel	-40 Cel		.032768 MHz	200 ns	55/45		STANDBY; ENABLE/DISABLE FUNCTION; TR, 7 INCH
KC2520C24.0000C1LE00	Kyocera	CMOS	SURFACE MOUNT	4	15 %	NO		2 V			15 pF		1.8 V		4 ms	2.5mm x 2.0mm x 0.7mm	1.6 V	85 Cel	-40 Cel	Gold (Au) - with Nickel (Ni) barrier	24 MHz	4 ns	45/55		STANDBY; ENABLE/DISABLE FUNCTION; TR	e4
KC2520C25.0000C1LE00	Kyocera	CMOS	SURFACE MOUNT	4	15 %	NO		2 V			15 pF		1.8 V		4 ms	2.5mm x 2.0mm x 0.7mm	1.6 V	85 Cel	-40 Cel	Gold (Au) - with Nickel (Ni) barrier	25 MHz	4 ns	45/55		ENABLE/DISABLE FUNCTION; TAPE AND REEL	e4
ECS-2520S18-384-EN-TR	Ecs International	HCMOS	SURFACE MOUNT	4	15 %	NO	CERAMIC	1.98 V	HCMOS		15 pF	7 mA	1.8 V		5 ms	2.5mm x 2.0mm x 0.9mm	1.62 V	85 Cel	-40 Cel	Gold (Au)	38.4 MHz	5 ns	45/55		TRI-STATE; ENABLE/DISABLE FUNCTION	e4
ECS-2520S30-160-EN-TR	Ecs International	HCMOS	SURFACE MOUNT	4	15 %	NO	CERAMIC	3.3 V			15 pF	7 mA	3 V	LCC4,.08X.1,68/52	5 ms	2.5mm x 2.0mm x 0.9mm	2.7 V	85 Cel	-40 Cel	Gold (Au)	16 MHz	5 ns	45/55		TRI-STATE; ENABLE/DISABLE FUNCTION	e4
ECS-2520SMV-250-GP-TR	Ecs International	CMOS	SURFACE MOUNT	4	15 %	NO	CERAMIC	3.63 V			15 pF	10 mA		LCC4,.08X.1,66/51	3 ms	2.5mm x 2mm x 0.8mm	1.62 V	105 Cel	-40 Cel	Gold (Au)	25 MHz	3 ns	45/55		TRI-STATE; ENABLE/DISABLE FUNCTION	e4
WL2513J0052.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	4	15 %	NO	CERAMIC	1.89 V			15 pF	60 mA	1.8 V	LCC4,.08X.1,74/52	5 ms	2.5mm x 2mm x 0.8mm	1.71 V	85 Cel	-40 Cel		52 MHz	5 ns	55/45		STANDBY; ENABLE/DISABLE FUNCTION
WL7011K0052.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	6	15 %	NO	CERAMIC	3.465 V			15 pF	60 mA	3.3 V	DILCC6,.2	5 ms	7mm x 5mm x 1.4mm	3.135 V	95 Cel	-40 Cel		52 MHz	5 ns	55/45		STANDBY; ENABLE/DISABLE FUNCTION
WL5013I0008.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	6	15 %	NO	CERAMIC	1.89 V			15 pF		1.8 V	SOLCC6,.12	5 ms	5mm x 3.2mm x 1.2mm	1.71 V	70 Cel	-20 Cel		8 MHz	5 ns	55/45		STANDBY; ENABLE/DISABLE FUNCTION
WL7013L0052.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	6	15 %	NO	CERAMIC	1.89 V			15 pF	60 mA	1.8 V	DILCC6,.2	5 ms	7mm x 5mm x 1.4mm	1.71 V	105 Cel	-40 Cel		52 MHz	5 ns	55/45		STANDBY; ENABLE/DISABLE FUNCTION
WL5012J0052.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	6	15 %	NO	CERAMIC	2.625 V			15 pF	7 mA	2.5 V	SOLCC6,.12	5 ms	5mm x 3.2mm x 1.2mm	2.375 V	85 Cel	-40 Cel		52 MHz	5 ns	55/45		STANDBY; ENABLE/DISABLE FUNCTION
WL7011K0008.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	6	15 %	NO	CERAMIC	3.465 V			15 pF	60 mA	3.3 V	DILCC6,.2	5 ms	7mm x 5mm x 1.4mm	3.135 V	95 Cel	-40 Cel		8 MHz	5 ns	55/45		STANDBY; ENABLE/DISABLE FUNCTION
WL3213L0008.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	6	15 %	NO	CERAMIC	1.89 V			15 pF	60 mA	1.8 V	LCC6,.1X.13,70/65	5 ms	3.2mm x 2.5mm x 0.9mm	1.71 V	105 Cel	-40 Cel		8 MHz	5 ns	55/45		STANDBY; ENABLE/DISABLE FUNCTION
WL5012K0052.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	6	15 %	NO	CERAMIC	2.625 V			15 pF	7 mA	2.5 V	SOLCC6,.12	5 ms	5mm x 3.2mm x 1.2mm	2.375 V	95 Cel	-40 Cel		52 MHz	5 ns	55/45		STANDBY; ENABLE/DISABLE FUNCTION
WL7011I0052.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	6	15 %	NO	CERAMIC	3.465 V			15 pF	60 mA	3.3 V	DILCC6,.2	5 ms	7mm x 5mm x 1.4mm	3.135 V	70 Cel	-20 Cel		52 MHz	5 ns	55/45		STANDBY; ENABLE/DISABLE FUNCTION
WL3212L0008.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	6	15 %	NO	CERAMIC	2.625 V			15 pF	60 mA	2.5 V	LCC6,.1X.13,70/65	5 ms	3.2mm x 2.5mm x 0.9mm	2.375 V	105 Cel	-40 Cel		8 MHz	5 ns	55/45		STANDBY; ENABLE/DISABLE FUNCTION
WL5011K0052.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	6	15 %	NO	CERAMIC	3.465 V			15 pF	7 mA	3.3 V	SOLCC6,.12	5 ms	5mm x 3.2mm x 1.2mm	3.135 V	95 Cel	-40 Cel		52 MHz	5 ns	55/45		STANDBY; ENABLE/DISABLE FUNCTION
WL3213K0008.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	6	15 %	NO	CERAMIC	1.89 V			15 pF	60 mA	1.8 V	LCC6,.1X.13,70/65	5 ms	3.2mm x 2.5mm x 0.9mm	1.71 V	95 Cel	-40 Cel		8 MHz	5 ns	55/45		STANDBY; ENABLE/DISABLE FUNCTION
WL3211I0052.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	6	15 %	NO	CERAMIC	3.465 V			15 pF	60 mA	3.3 V	LCC6,.1X.13,70/65	5 ms	3.2mm x 2.5mm x 0.9mm	3.135 V	70 Cel	-20 Cel		52 MHz	5 ns	55/45		STANDBY; ENABLE/DISABLE FUNCTION
WL2511I0052.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	4	15 %	NO	CERAMIC	3.465 V			15 pF	60 mA	3.3 V	LCC4,.08X.1,74/52	5 ms	2.5mm x 2mm x 0.8mm	3.135 V	70 Cel	-20 Cel		52 MHz	5 ns	55/45		STANDBY; ENABLE/DISABLE FUNCTION
WL2513I0008.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	4	15 %	NO	CERAMIC	1.89 V			15 pF	60 mA	1.8 V	LCC4,.08X.1,74/52	5 ms	2.5mm x 2mm x 0.8mm	1.71 V	70 Cel	-20 Cel		8 MHz	5 ns	55/45		STANDBY; ENABLE/DISABLE FUNCTION
WL2512L0052.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	4	15 %	NO	CERAMIC	2.625 V			15 pF	60 mA	2.5 V	LCC4,.08X.1,74/52	5 ms	2.5mm x 2mm x 0.8mm	2.375 V	105 Cel	-40 Cel		52 MHz	5 ns	55/45		STANDBY; ENABLE/DISABLE FUNCTION
WL5011J0052.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	6	15 %	NO	CERAMIC	3.465 V			15 pF	7 mA	3.3 V	SOLCC6,.12	5 ms	5mm x 3.2mm x 1.2mm	3.135 V	85 Cel	-40 Cel		52 MHz	5 ns	55/45		STANDBY; ENABLE/DISABLE FUNCTION
WL2513L0052.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	4	15 %	NO	CERAMIC	1.89 V			15 pF	60 mA	1.8 V	LCC4,.08X.1,74/52	5 ms	2.5mm x 2mm x 0.8mm	1.71 V	105 Cel	-40 Cel		52 MHz	5 ns	55/45		STANDBY; ENABLE/DISABLE FUNCTION
WL5012K0008.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	6	15 %	NO	CERAMIC	2.625 V			15 pF		2.5 V	SOLCC6,.12	5 ms	5mm x 3.2mm x 1.2mm	2.375 V	95 Cel	-40 Cel		8 MHz	5 ns	55/45		STANDBY; ENABLE/DISABLE FUNCTION
WL7012K0008.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	6	15 %	NO	CERAMIC	2.625 V			15 pF	60 mA	2.5 V	DILCC6,.2	5 ms	7mm x 5mm x 1.4mm	2.375 V	95 Cel	-40 Cel		8 MHz	5 ns	55/45		STANDBY; ENABLE/DISABLE FUNCTION
WL7011J0008.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	6	15 %	NO	CERAMIC	3.465 V			15 pF	60 mA	3.3 V	DILCC6,.2	5 ms	7mm x 5mm x 1.4mm	3.135 V	85 Cel	-40 Cel		8 MHz	5 ns	55/45		STANDBY; ENABLE/DISABLE FUNCTION
WL3213I0008.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	6	15 %	NO	CERAMIC	1.89 V			15 pF	60 mA	1.8 V	LCC6,.1X.13,70/65	5 ms	3.2mm x 2.5mm x 0.9mm	1.71 V	70 Cel	-20 Cel		8 MHz	5 ns	55/45		STANDBY; ENABLE/DISABLE FUNCTION
WL5012J0008.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	6	15 %	NO	CERAMIC	2.625 V			15 pF		2.5 V	SOLCC6,.12	5 ms	5mm x 3.2mm x 1.2mm	2.375 V	85 Cel	-40 Cel		8 MHz	5 ns	55/45		STANDBY; ENABLE/DISABLE FUNCTION
WL5011J0008.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	6	15 %	NO	CERAMIC	3.465 V			15 pF		3.3 V	SOLCC6,.12	5 ms	5mm x 3.2mm x 1.2mm	3.135 V	85 Cel	-40 Cel		8 MHz	5 ns	55/45		STANDBY; ENABLE/DISABLE FUNCTION
WL7013I0008.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	6	15 %	NO	CERAMIC	1.89 V			15 pF	60 mA	1.8 V	DILCC6,.2	5 ms	7mm x 5mm x 1.4mm	1.71 V	70 Cel	-20 Cel		8 MHz	5 ns	55/45		STANDBY; ENABLE/DISABLE FUNCTION
WL3211J0052.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	6	15 %	NO	CERAMIC	3.465 V			15 pF	60 mA	3.3 V	LCC6,.1X.13,70/65	5 ms	3.2mm x 2.5mm x 0.9mm	3.135 V	85 Cel	-40 Cel		52 MHz	5 ns	55/45		STANDBY; ENABLE/DISABLE FUNCTION
WL7012J0052.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	6	15 %	NO	CERAMIC	2.625 V			15 pF	60 mA	2.5 V	DILCC6,.2	5 ms	7mm x 5mm x 1.4mm	2.375 V	85 Cel	-40 Cel		52 MHz	5 ns	55/45		STANDBY; ENABLE/DISABLE FUNCTION
WL7013J0008.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	6	15 %	NO	CERAMIC	1.89 V			15 pF	60 mA	1.8 V	DILCC6,.2	5 ms	7mm x 5mm x 1.4mm	1.71 V	85 Cel	-40 Cel		8 MHz	5 ns	55/45		STANDBY; ENABLE/DISABLE FUNCTION
WL3211K0052.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	6	15 %	NO	CERAMIC	3.465 V			15 pF	60 mA	3.3 V	LCC6,.1X.13,70/65	5 ms	3.2mm x 2.5mm x 0.9mm	3.135 V	95 Cel	-40 Cel		52 MHz	5 ns	55/45		STANDBY; ENABLE/DISABLE FUNCTION
WL5013J0008.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	6	15 %	NO	CERAMIC	1.89 V			15 pF		1.8 V	SOLCC6,.12	5 ms	5mm x 3.2mm x 1.2mm	1.71 V	85 Cel	-40 Cel		8 MHz	5 ns	55/45		STANDBY; ENABLE/DISABLE FUNCTION
WL2513J0008.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	4	15 %	NO	CERAMIC	1.89 V			15 pF	60 mA	1.8 V	LCC4,.08X.1,74/52	5 ms	2.5mm x 2mm x 0.8mm	1.71 V	85 Cel	-40 Cel		8 MHz	5 ns	55/45		STANDBY; ENABLE/DISABLE FUNCTION
WL7012I0052.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	6	15 %	NO	CERAMIC	2.625 V			15 pF	60 mA	2.5 V	DILCC6,.2	5 ms	7mm x 5mm x 1.4mm	2.375 V	70 Cel	-20 Cel		52 MHz	5 ns	55/45		STANDBY; ENABLE/DISABLE FUNCTION
WL5011I0052.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	6	15 %	NO	CERAMIC	3.465 V			15 pF	7 mA	3.3 V	SOLCC6,.12	5 ms	5mm x 3.2mm x 1.2mm	3.135 V	70 Cel	-20 Cel		52 MHz	5 ns	55/45		STANDBY; ENABLE/DISABLE FUNCTION
WL7012K0052.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	6	15 %	NO	CERAMIC	2.625 V			15 pF	60 mA	2.5 V	DILCC6,.2	5 ms	7mm x 5mm x 1.4mm	2.375 V	95 Cel	-40 Cel		52 MHz	5 ns	55/45		STANDBY; ENABLE/DISABLE FUNCTION
WL3212J0008.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	6	15 %	NO	CERAMIC	2.625 V			15 pF	60 mA	2.5 V	LCC6,.1X.13,70/65	5 ms	3.2mm x 2.5mm x 0.9mm	2.375 V	85 Cel	-40 Cel		8 MHz	5 ns	55/45		STANDBY; ENABLE/DISABLE FUNCTION
WL7013K0008.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	6	15 %	NO	CERAMIC	1.89 V			15 pF	60 mA	1.8 V	DILCC6,.2	5 ms	7mm x 5mm x 1.4mm	1.71 V	95 Cel	-40 Cel		8 MHz	5 ns	55/45		STANDBY; ENABLE/DISABLE FUNCTION
WL3211I0008.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	6	15 %	NO	CERAMIC	3.465 V			15 pF	60 mA	3.3 V	LCC6,.1X.13,70/65	5 ms	3.2mm x 2.5mm x 0.9mm	3.135 V	70 Cel	-20 Cel		8 MHz	5 ns	55/45		STANDBY; ENABLE/DISABLE FUNCTION

XO Clock Oscillators

Crystal Oscillator (XO) Clock Oscillators are electronic devices that generate a stable clock signal with a fixed frequency. They use a quartz crystal resonator as the frequency-determining element, which provides a stable and accurate frequency over a wide temperature range.

One of the main advantages of XO Clock Oscillators is their ability to generate a stable and precise clock signal with a fixed frequency. This makes them ideal for use in applications that require precise timing, such as in digital signal processing, telecommunications, and scientific research.

XO Clock Oscillators offer a low phase noise, which is important in applications that require a clean and stable clock signal. They are capable of generating frequencies ranging from a few kilohertz to several hundred megahertz, making them suitable for use in various electronic circuits.

Additionally, XO Clock Oscillators have a relatively simple design and are easy to integrate into electronic systems. They are available in a range of package sizes and configurations, allowing them to be used in various applications, including in communication systems, network equipment, and instrumentation.