70 % XO Clock Oscillators 652

Reset All
Part RoHS Manufacturer Oscillator Type Mounting Feature No. of Terminals Frequency Stability Frequency Adjustment (Mechanical) Aging Package Body Material Maximum Supply Voltage Technology Screening Level Output Load Maximum Supply Current Nominal Supply Voltage Power Supplies (V) Package Equivalence Code Maximum Rise Time Sub-Category Physical Dimension Minimum Supply Voltage Maximum Operating Temperature Minimum Operating Temperature Terminal Finish Nominal Operating Frequency Maximum Fall Time Maximum Symmetry (%) Manufacturer Series Qualification Maximum Output Low Current Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

HX2011G0001.750000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

70 %

NO

CERAMIC

3.465 V

AEC-Q200

15 pF

20 mA

3.3 V

LCC4,.06X.08,50/38

8 ms

2.0mm x 1.6mm x 0.75mm

3.135 V

125 Cel

-40 Cel

1.75 MHz

8 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX2012G0060.000000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

70 %

NO

CERAMIC

2.625 V

AEC-Q200

15 pF

20 mA

2.5 V

LCC4,.06X.08,50/38

8 ms

2mm x 1.6mm x 0.75mm

2.375 V

125 Cel

-40 Cel

60 MHz

8 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX5012G0161.000000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

70 %

NO

CERAMIC

2.625 V

AEC-Q200

15 pF

40 mA

2.5 V

DILCC4,.12

4 ms

5.0mm x 3.2mm x 1.2mm

2.375 V

125 Cel

-40 Cel

161 MHz

4 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX3211G0001.750000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

70 %

NO

CERAMIC

3.465 V

AEC-Q200

15 pF

20 mA

3.3 V

8 ms

3.2mm x 2.5mm x 1.0mm

3.135 V

125 Cel

-40 Cel

1.75 MHz

8 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX2512G0162.000000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

70 %

NO

CERAMIC

2.625 V

AEC-Q200

15 pF

40 mA

2.5 V

4 ms

2.5mm x 2.0mm x 0.9mm

2.375 V

125 Cel

-40 Cel

162 MHz

4 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX2511G0162.000000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

70 %

NO

CERAMIC

3.465 V

AEC-Q200

15 pF

40 mA

3.3 V

4 ms

2.5mm x 2.0mm x 0.9mm

3.135 V

125 Cel

-40 Cel

162 MHz

4 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX3222G0161.000000

Diodes Incorporated

LVPECL

SURFACE MOUNT

6

70 %

NO

CERAMIC

2.625 V

AEC-Q200

50 OHM

80 mA

2.5 V

LCC6,.1X.12,65/49

.85 ms

3.2mm x 2.5mm x 0.9mm

2.375 V

125 Cel

-40 Cel

161 MHz

.85 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX3222G0025.000000

Diodes Incorporated

LVPECL

SURFACE MOUNT

6

70 %

NO

CERAMIC

2.625 V

AEC-Q200

50 OHM

80 mA

2.5 V

LCC6,.1X.12,65/49

.85 ms

3.2mm x 2.5mm x 0.9mm

2.375 V

125 Cel

-40 Cel

25 MHz

.85 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX2512G0001.000000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

70 %

NO

CERAMIC

2.625 V

AEC-Q200

15 pF

20 mA

2.5 V

8 ms

2.5mm x 2.0mm x 0.9mm

2.375 V

125 Cel

-40 Cel

1 MHz

8 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX5013G0001.750000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

70 %

NO

CERAMIC

1.89 V

AEC-Q200

15 pF

20 mA

1.8 V

DILCC4,.12

8 ms

5.0mm x 3.2mm x 1.2mm

1.71 V

125 Cel

-40 Cel

1.75 MHz

8 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX2511G0001.000000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

70 %

NO

CERAMIC

3.465 V

AEC-Q200

15 pF

20 mA

3.3 V

8 ms

2.5mm x 2.0mm x 0.9mm

3.135 V

125 Cel

-40 Cel

1 MHz

8 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX2513G0135.000000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

70 %

NO

CERAMIC

1.89 V

AEC-Q200

15 pF

40 mA

1.8 V

4 ms

2.5mm x 2.0mm x 0.9mm

1.71 V

125 Cel

-40 Cel

135 MHz

4 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX3212G0161.000000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

70 %

NO

CERAMIC

2.625 V

AEC-Q200

15 pF

40 mA

2.5 V

LCC4,.1X.13,83/65

4 ms

3.2mm x 2.5mm x 1.0mm

2.375 V

125 Cel

-40 Cel

161 MHz

4 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX2513G0001.000000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

70 %

NO

CERAMIC

1.89 V

AEC-Q200

15 pF

20 mA

1.8 V

8 ms

2.5mm x 2.0mm x 0.9mm

1.71 V

125 Cel

-40 Cel

1 MHz

8 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX2013G0060.000000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

70 %

NO

CERAMIC

1.89 V

AEC-Q200

15 pF

20 mA

1.8 V

LCC4,.06X.08,50/38

8 ms

2mm x 1.6mm x 0.75mm

1.71 V

125 Cel

-40 Cel

60 MHz

8 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX3212G0001.750000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

70 %

NO

CERAMIC

2.625 V

AEC-Q200

15 pF

20 mA

2.5 V

LCC4,.1X.13,83/65

8 ms

3.2mm x 2.5mm x 1.0mm

2.375 V

125 Cel

-40 Cel

1.75 MHz

8 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX2012G0001.750000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

70 %

NO

CERAMIC

2.625 V

AEC-Q200

15 pF

20 mA

2.5 V

LCC4,.06X.08,50/38

8 ms

2mm x 1.6mm x 0.75mm

2.375 V

125 Cel

-40 Cel

1.75 MHz

8 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX3221G0025.000000

Diodes Incorporated

LVPECL

SURFACE MOUNT

6

70 %

NO

CERAMIC

3.465 V

AEC-Q200

50 OHM

80 mA

3.3 V

.85 ms

3.2mmx2.5mmx0.9mm

3.135 V

125 Cel

-40 Cel

25 MHz

.85 ns

55/45

ENABLE/DISABLE FUNCTION

HX5011G0001.750000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

70 %

NO

CERAMIC

3.465 V

AEC-Q200

15 pF

20 mA

3.3 V

DILCC4,.2

8 ms

5.0mm x 3.2mm x 1.2mm

3.135 V

125 Cel

-40 Cel

1.75 MHz

8 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX2011G0060.000000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

70 %

NO

CERAMIC

3.465 V

AEC-Q200

15 pF

20 mA

3.3 V

LCC4,.06X.08,50/38

8 ms

2.0mm x 1.6mm x 0.75mm

3.135 V

125 Cel

-40 Cel

60 MHz

8 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX3211G0161.000000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

70 %

NO

CERAMIC

3.465 V

AEC-Q200

15 pF

40 mA

3.3 V

8 ms

3.2mm x 2.5mm x 1.0mm

3.135 V

125 Cel

-40 Cel

161 MHz

8 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX5011G0161.000000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

70 %

NO

CERAMIC

3.465 V

AEC-Q200

15 pF

40 mA

3.3 V

DILCC4,.2

4 ms

5.0mm x 3.2mm x 1.2mm

3.135 V

125 Cel

-40 Cel

161 MHz

4 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX3221G0161.000000

Diodes Incorporated

LVPECL

SURFACE MOUNT

6

70 %

NO

CERAMIC

3.465 V

AEC-Q200

50 OHM

80 mA

3.3 V

.85 ms

3.2mmx2.5mmx0.9mm

3.135 V

125 Cel

-40 Cel

161 MHz

.85 ns

55/45

ENABLE/DISABLE FUNCTION

HX5013G0161.000000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

70 %

NO

CERAMIC

1.89 V

AEC-Q200

15 pF

40 mA

1.8 V

DILCC4,.12

4 ms

5.0mm x 3.2mm x 1.2mm

1.71 V

125 Cel

-40 Cel

161 MHz

4 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX3213G0161.000000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

70 %

NO

CERAMIC

1.89 V

AEC-Q200

15 pF

40 mA

1.8 V

LCC4,.1X.13,83/65

4 ms

3.2mm x 2.5mm x 1.0mm

1.71 V

125 Cel

-40 Cel

161 MHz

4 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX2013G0001.750000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

70 %

NO

CERAMIC

1.89 V

AEC-Q200

15 pF

20 mA

1.8 V

LCC4,.06X.08,50/38

8 ms

2mm x 1.6mm x 0.75mm

1.71 V

125 Cel

-40 Cel

1.75 MHz

8 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX3213G0001.750000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

70 %

NO

CERAMIC

1.89 V

AEC-Q200

15 pF

20 mA

1.8 V

LCC4,.1X.13,83/65

8 ms

3.2mm x 2.5mm x 1.0mm

1.71 V

125 Cel

-40 Cel

1.75 MHz

8 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX5012G0001.750000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

70 %

NO

CERAMIC

2.625 V

AEC-Q200

15 pF

20 mA

2.5 V

DILCC4,.12

8 ms

5.0mm x 3.2mm x 1.2mm

2.375 V

125 Cel

-40 Cel

1.75 MHz

8 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

UF5031HA0100.0000Q

Diodes Incorporated

LVDS

SURFACE MOUNT

6

70 %

NO

CERAMIC

3.465 V

AEC-Q100/101/200; IATF16949

100 OHM

30 mA

3.3 V

DILCC6,.12

.5 ms

5mm x 3.2mm x 1.2mm

3.135 V

125 Cel

-40 Cel

100 MHz

.5 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION; COMPLEMENTARY OUTPUT

UF5041HB0212.5000N

Diodes Incorporated

HCSL

SURFACE MOUNT

6

70 %

NO

CERAMIC

3.465 V

33 OHM, 50 OHM, 2 pF

50 mA

3.3 V

DILCC6,.12

.7 ms

5mm x 3.2mm x 1.2mm

3.135 V

125 Cel

-40 Cel

212.5 MHz

.7 ns

55/45

UF5032HA0212.5000QE

Diodes Incorporated

LVDS

SURFACE MOUNT

6

70 %

NO

CERAMIC

2.625 V

AEC-Q100/101/200; IATF16949

100 OHM

30 mA

2.5 V

DILCC6,.12

.5 ms

5mm x 3.2mm x 1.2mm

2.375 V

125 Cel

-40 Cel

212.5 MHz

.5 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION; COMPLEMENTARY OUTPUT

UF7032HA0212.5000E

Diodes Incorporated

LVDS

SURFACE MOUNT

6

70 %

NO

CERAMIC

2.625 V

100 OHM

30 mA

2.5 V

DILCC6,.2

.5 ms

7mm x 5mm x 1.4mm

2.375 V

125 Cel

-40 Cel

212.5 MHz

.5 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION; DIFFERENTIAL OUTPUT

UF5032GB0212.5000

Diodes Incorporated

LVDS

SURFACE MOUNT

6

70 %

NO

CERAMIC

2.625 V

100 OHM

25 mA

2.5 V

DILCC6,.12

.3 ms

5mm x 3.2mm x 1.2mm

2.375 V

105 Cel

-40 Cel

212.5 MHz

.3 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION; COMPLEMENTARY OUTPUT

UF5031GA0212.5000

Diodes Incorporated

LVDS

SURFACE MOUNT

6

70 %

NO

CERAMIC

3.465 V

100 OHM

25 mA

3.3 V

DILCC6,.12

.3 ms

5mm x 3.2mm x 1.2mm

3.135 V

105 Cel

-40 Cel

212.5 MHz

.3 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION; COMPLEMENTARY OUTPUT

UF7041HB0100.000000QE

Diodes Incorporated

HCSL

SURFACE MOUNT

6

70 %

NO

CERAMIC

3.465 V

AEC-Q100/101/200; IATF16949

33 OHM, 50 OHM, 2 pF

50 mA

3.3 V

DILCC6,.2

.7 ms

7.0mm x 5.0mm x 1.4mm

3.135 V

125 Cel

-40 Cel

100 MHz

.7 ns

55/45

ENABLE/DISABLE FUNCTION; STAND-BY FUNCTION

UF5031HB0100.0000QN

Diodes Incorporated

LVDS

SURFACE MOUNT

6

70 %

NO

CERAMIC

3.465 V

AEC-Q100/101/200; IATF16949

100 OHM

30 mA

3.3 V

DILCC6,.12

.5 ms

5mm x 3.2mm x 1.2mm

3.135 V

125 Cel

-40 Cel

100 MHz

.5 ns

55/45

UF5031HA0100.0000

Diodes Incorporated

LVDS

SURFACE MOUNT

6

70 %

NO

CERAMIC

3.465 V

100 OHM

30 mA

3.3 V

DILCC6,.12

.5 ms

5mm x 3.2mm x 1.2mm

3.135 V

125 Cel

-40 Cel

100 MHz

.5 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION; COMPLEMENTARY OUTPUT

UF7031GA0212.5000QE

Diodes Incorporated

LVDS

SURFACE MOUNT

6

70 %

NO

CERAMIC

3.465 V

AEC-Q100/101/200; IATF16949

100 OHM

25 mA

3.3 V

DILCC6,.2

.3 ms

7mm x 5mm x 1.4mm

3.135 V

105 Cel

-40 Cel

212.5 MHz

.3 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION; DIFFERENTIAL OUTPUT

UF5041GA0212.5000

Diodes Incorporated

HCSL

SURFACE MOUNT

6

70 %

NO

CERAMIC

3.465 V

33 OHM, 50 OHM, 2 pF

40 mA

3.3 V

DILCC6,.12

.7 ms

5mm x 3.2mm x 1.2mm

3.135 V

105 Cel

-40 Cel

212.5 MHz

.7 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION; DIFFERENTIAL OUTPUT

UF7031HB0100.0000

Diodes Incorporated

LVDS

SURFACE MOUNT

6

70 %

NO

CERAMIC

3.465 V

100 OHM

30 mA

3.3 V

DILCC6,.2

.5 ms

7mm x 5mm x 1.4mm

3.135 V

125 Cel

-40 Cel

100 MHz

.5 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION; DIFFERENTIAL OUTPUT

UF7032GB0212.5000N

Diodes Incorporated

LVDS

SURFACE MOUNT

6

70 %

NO

CERAMIC

2.625 V

100 OHM

25 mA

2.5 V

DILCC6,.2

.3 ms

7mm x 5mm x 1.4mm

2.375 V

105 Cel

-40 Cel

212.5 MHz

.3 ns

55/45

UF5042HB0212.5000E

Diodes Incorporated

HCSL

SURFACE MOUNT

6

70 %

NO

CERAMIC

2.625 V

33 OHM, 50 OHM, 2 pF

50 mA

2.5 V

DILCC6,.12

.7 ms

5mm x 3.2mm x 1.2mm

2.375 V

125 Cel

-40 Cel

212.5 MHz

.7 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION; DIFFERENTIAL OUTPUT

UF7041HB0212.500000Q

Diodes Incorporated

HCSL

SURFACE MOUNT

6

70 %

NO

CERAMIC

3.465 V

AEC-Q100/101/200; IATF16949

33 OHM, 50 OHM, 2 pF

50 mA

3.3 V

DILCC6,.2

.7 ms

7.0mm x 5.0mm x 1.4mm

3.135 V

125 Cel

-40 Cel

212.5 MHz

.7 ns

55/45

ENABLE/DISABLE FUNCTION; STAND-BY FUNCTION

UF5041GA0212.5000E

Diodes Incorporated

HCSL

SURFACE MOUNT

6

70 %

NO

CERAMIC

3.465 V

33 OHM, 50 OHM, 2 pF

40 mA

3.3 V

DILCC6,.12

.7 ms

5mm x 3.2mm x 1.2mm

3.135 V

105 Cel

-40 Cel

212.5 MHz

.7 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION; DIFFERENTIAL OUTPUT

UF5041HB0212.5000Q

Diodes Incorporated

HCSL

SURFACE MOUNT

6

70 %

NO

CERAMIC

3.465 V

AEC-Q100/101/200; IATF16949

33 OHM, 50 OHM, 2 pF

50 mA

3.3 V

DILCC6,.12

.7 ms

5mm x 3.2mm x 1.2mm

3.135 V

125 Cel

-40 Cel

212.5 MHz

.7 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION; DIFFERENTIAL OUTPUT

UF7032GB0100.0000Q

Diodes Incorporated

LVDS

SURFACE MOUNT

6

70 %

NO

CERAMIC

2.625 V

AEC-Q100/101/200; IATF16949

100 OHM

25 mA

2.5 V

DILCC6,.2

.3 ms

7mm x 5mm x 1.4mm

2.375 V

105 Cel

-40 Cel

100 MHz

.3 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION; DIFFERENTIAL OUTPUT

UF7031HA0212.5000Q

Diodes Incorporated

LVDS

SURFACE MOUNT

6

70 %

NO

CERAMIC

3.465 V

AEC-Q100/101/200; IATF16949

100 OHM

30 mA

3.3 V

DILCC6,.2

.5 ms

7mm x 5mm x 1.4mm

3.135 V

125 Cel

-40 Cel

212.5 MHz

.5 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION; DIFFERENTIAL OUTPUT

UF5031HB0100.0000Q

Diodes Incorporated

LVDS

SURFACE MOUNT

6

70 %

NO

CERAMIC

3.465 V

AEC-Q100/101/200; IATF16949

100 OHM

30 mA

3.3 V

DILCC6,.12

.5 ms

5mm x 3.2mm x 1.2mm

3.135 V

125 Cel

-40 Cel

100 MHz

.5 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION; COMPLEMENTARY OUTPUT

XO Clock Oscillators

Crystal Oscillator (XO) Clock Oscillators are electronic devices that generate a stable clock signal with a fixed frequency. They use a quartz crystal resonator as the frequency-determining element, which provides a stable and accurate frequency over a wide temperature range.

One of the main advantages of XO Clock Oscillators is their ability to generate a stable and precise clock signal with a fixed frequency. This makes them ideal for use in applications that require precise timing, such as in digital signal processing, telecommunications, and scientific research.

XO Clock Oscillators offer a low phase noise, which is important in applications that require a clean and stable clock signal. They are capable of generating frequencies ranging from a few kilohertz to several hundred megahertz, making them suitable for use in various electronic circuits.

Additionally, XO Clock Oscillators have a relatively simple design and are easy to integrate into electronic systems. They are available in a range of package sizes and configurations, allowing them to be used in various applications, including in communication systems, network equipment, and instrumentation.