MILITARY Phase Locked Loops (PLL) & Frequency Synthesis Circuits 221

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Part RoHS Manufacturer Other IC type Temperature Grade No. of Terminals Package Code Package Shape Surface Mount Total Dose (V) Package Body Material Maximum Supply Current (Isup) No. of Functions Technology Screening Level Nominal Bandwidth Terminal Form Maximum Negative Supply Voltage (Vsup) Nominal Negative Supply Voltage (Vsup) Nominal Supply Voltage (Vsup) Power Supplies (V) Maximum Output Frequency Package Style (Meter) Package Equivalence Code Sub-Category Terminal Pitch Maximum Operating Temperature Minimum Operating Temperature Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Width (mm) Qualification Minimum Supply Voltage (Vsup) Additional Features Minimum Negative Supply Voltage (Vsup) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Length

SE567FE/883B

NXP Semiconductors

MILITARY

8

DIP

RECTANGULAR

NO

CERAMIC

BIPOLAR

MIL-STD-883 Class B (Modified)

THROUGH-HOLE

5 V

5

IN-LINE

DIP8,.3

PLL or Frequency Synthesis Circuits

2.54 mm

125 Cel

-55 Cel

DUAL

R-XDIP-T8

Not Qualified

567/BCA

NXP Semiconductors

PHASE LOCKED LOOP

MILITARY

14

DIP

RECTANGULAR

NO

CERAMIC, GLASS-SEALED

1

THROUGH-HOLE

5 V

IN-LINE

2.54 mm

125 Cel

-55 Cel

DUAL

R-GDIP-T14

9 V

5.08 mm

7.62 mm

Not Qualified

4.75 V

19.43 mm

5962-9231301MXX

NXP Semiconductors

PLL FREQUENCY SYNTHESIZER

MILITARY

28

DIP

RECTANGULAR

NO

CERAMIC, GLASS-SEALED

1

MIL-STD-883

THROUGH-HOLE

5 V

IN-LINE

125 Cel

-55 Cel

DUAL

R-GDIP-T28

9 V

3 V

SE567F

NXP Semiconductors

PHASE LOCKED LOOP

MILITARY

14

DIP

RECTANGULAR

NO

CERAMIC, GLASS-SEALED

8 mA

1

BIPOLAR

THROUGH-HOLE

5 V

IN-LINE

2.54 mm

125 Cel

-55 Cel

DUAL

R-GDIP-T14

9 V

5.08 mm

7.62 mm

Not Qualified

4.75 V

19.535 mm

SE565N

NXP Semiconductors

PHASE LOCKED LOOP

MILITARY

14

DIP

RECTANGULAR

NO

PLASTIC/EPOXY

1

BIPOLAR

THROUGH-HOLE

6 V

IN-LINE

2.54 mm

125 Cel

-55 Cel

DUAL

R-PDIP-T14

12 V

4.2 mm

7.62 mm

Not Qualified

6 V

ALSO REQUIRES -6V TO -12V SUPPLY

19.025 mm

HEC4750VD

NXP Semiconductors

PLL FREQUENCY SYNTHESIZER

MILITARY

28

DIP

RECTANGULAR

NO

CERAMIC, METAL-SEALED COFIRED

1

CMOS

THROUGH-HOLE

IN-LINE

125 Cel

-55 Cel

DUAL

R-CDIP-T28

15 V

Not Qualified

3 V

HEC4750VDF

NXP Semiconductors

PLL FREQUENCY SYNTHESIZER

MILITARY

28

DIP

RECTANGULAR

NO

CERAMIC, GLASS-SEALED

.75 mA

1

CMOS

THROUGH-HOLE

10 V

IN-LINE

2.54 mm

125 Cel

-55 Cel

TIN/NICKEL PALLADIUM GOLD

DUAL

R-GDIP-T28

10.5 V

5.72 mm

15.24 mm

Not Qualified

9.5 V

e3/e4

37.1475 mm

IMI145158020LK

Infineon Technologies

MILITARY

20

QCCN

SQUARE

YES

CERAMIC

CMOS

38535Q/M;38534H;883B

NO LEAD

5 V

5

CHIP CARRIER

LCC20,.35SQ

PLL or Frequency Synthesis Circuits

1.27 mm

125 Cel

-55 Cel

Tin/Lead (Sn/Pb)

QUAD

S-XQCC-N20

Not Qualified

e0

IMI145155020LK

Infineon Technologies

MILITARY

20

QCCN

SQUARE

YES

CERAMIC

CMOS

38535Q/M;38534H;883B

NO LEAD

3/7

CHIP CARRIER

LCC20,.35SQ

PLL or Frequency Synthesis Circuits

1.27 mm

125 Cel

-55 Cel

Tin/Lead (Sn/Pb)

QUAD

S-XQCC-N20

Not Qualified

e0

IMI145155000DQ

Infineon Technologies

MILITARY

CMOS

3/7

DIE OR CHIP

PLL or Frequency Synthesis Circuits

125 Cel

-55 Cel

Not Qualified

IMI145155018SK

Infineon Technologies

MILITARY

18

DIP

RECTANGULAR

NO

CERAMIC

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

3/7

IN-LINE

DIP18,.3

PLL or Frequency Synthesis Circuits

2.54 mm

125 Cel

-55 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T18

Not Qualified

e0

IMI145152028ST

Infineon Technologies

MILITARY

28

DIP

RECTANGULAR

NO

CERAMIC

CMOS

THROUGH-HOLE

3/9

IN-LINE

DIP28,.6

PLL or Frequency Synthesis Circuits

2.54 mm

125 Cel

-55 Cel

TIN LEAD

DUAL

R-XDIP-T28

Not Qualified

e0

IMI145156020ST

Infineon Technologies

MILITARY

20

DIP

RECTANGULAR

NO

CERAMIC

CMOS

THROUGH-HOLE

IN-LINE

DIP20,.3

PLL or Frequency Synthesis Circuits

2.54 mm

125 Cel

-55 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T20

Not Qualified

e0

IMI145155018ST

Infineon Technologies

MILITARY

18

DIP

RECTANGULAR

NO

CERAMIC

CMOS

THROUGH-HOLE

3/7

IN-LINE

DIP18,.3

PLL or Frequency Synthesis Circuits

2.54 mm

125 Cel

-55 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T18

Not Qualified

e0

IMI145158020LT

Infineon Technologies

MILITARY

20

QCCN

SQUARE

YES

CERAMIC

CMOS

NO LEAD

5 V

5

CHIP CARRIER

LCC20,.35SQ

PLL or Frequency Synthesis Circuits

1.27 mm

125 Cel

-55 Cel

Tin/Lead (Sn/Pb)

QUAD

S-XQCC-N20

Not Qualified

e0

IMI145156020LK

Infineon Technologies

MILITARY

20

QCCN

SQUARE

YES

CERAMIC

CMOS

38535Q/M;38534H;883B

NO LEAD

CHIP CARRIER

LCC20,.35SQ

PLL or Frequency Synthesis Circuits

1.27 mm

125 Cel

-55 Cel

Tin/Lead (Sn/Pb)

QUAD

S-XQCC-N20

Not Qualified

e0

IMI145152028SK

Infineon Technologies

MILITARY

28

DIP

RECTANGULAR

NO

CERAMIC

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

3/9

IN-LINE

DIP28,.6

PLL or Frequency Synthesis Circuits

2.54 mm

125 Cel

-55 Cel

TIN LEAD

DUAL

R-XDIP-T28

Not Qualified

e0

IMI145158016SK

Infineon Technologies

MILITARY

16

DIP

RECTANGULAR

NO

CERAMIC

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

5 V

5

IN-LINE

DIP16,.3

PLL or Frequency Synthesis Circuits

2.54 mm

125 Cel

-55 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T16

Not Qualified

e0

IMI145152028LK

Infineon Technologies

MILITARY

28

QCCN

SQUARE

YES

CERAMIC

CMOS

38535Q/M;38534H;883B

NO LEAD

3/9

CHIP CARRIER

LCC28,.45SQ

PLL or Frequency Synthesis Circuits

1.27 mm

125 Cel

-55 Cel

Tin/Lead (Sn/Pb)

QUAD

S-XQCC-N28

Not Qualified

e0

IMI145155020LT

Infineon Technologies

MILITARY

20

QCCN

SQUARE

YES

CERAMIC

CMOS

NO LEAD

3/7

CHIP CARRIER

LCC20,.35SQ

PLL or Frequency Synthesis Circuits

1.27 mm

125 Cel

-55 Cel

Tin/Lead (Sn/Pb)

QUAD

S-XQCC-N20

Not Qualified

e0

IMI145152028LT

Infineon Technologies

MILITARY

28

QCCN

SQUARE

YES

CERAMIC

CMOS

NO LEAD

3/9

CHIP CARRIER

LCC28,.45SQ

PLL or Frequency Synthesis Circuits

1.27 mm

125 Cel

-55 Cel

Tin/Lead (Sn/Pb)

QUAD

S-XQCC-N28

Not Qualified

e0

IMI145156020SK

Infineon Technologies

MILITARY

20

DIP

RECTANGULAR

NO

CERAMIC

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

IN-LINE

DIP20,.3

PLL or Frequency Synthesis Circuits

2.54 mm

125 Cel

-55 Cel

TIN LEAD

DUAL

R-XDIP-T20

Not Qualified

e0

IMI145158016ST

Infineon Technologies

MILITARY

16

DIP

RECTANGULAR

NO

CERAMIC

CMOS

THROUGH-HOLE

5 V

5

IN-LINE

DIP16,.3

PLL or Frequency Synthesis Circuits

2.54 mm

125 Cel

-55 Cel

TIN LEAD

DUAL

R-XDIP-T16

Not Qualified

e0

IMI145156020LT

Infineon Technologies

MILITARY

20

QCCN

SQUARE

YES

CERAMIC

CMOS

NO LEAD

CHIP CARRIER

LCC20,.35SQ

PLL or Frequency Synthesis Circuits

1.27 mm

125 Cel

-55 Cel

Tin/Lead (Sn/Pb)

QUAD

S-XQCC-N20

Not Qualified

e0

IMI145158000DQ

Infineon Technologies

MILITARY

CMOS

5 V

5

DIE OR CHIP

PLL or Frequency Synthesis Circuits

125 Cel

-55 Cel

Not Qualified

CD74HC7046AH

Renesas Electronics

MILITARY

CMOS

2/6

DIE OR CHIP

PLL or Frequency Synthesis Circuits

125 Cel

-55 Cel

Not Qualified

CD74HCT7046AH

Renesas Electronics

MILITARY

CMOS

5 V

5

DIE OR CHIP

PLL or Frequency Synthesis Circuits

125 Cel

-55 Cel

Not Qualified

CD74HCT297H

Renesas Electronics

MILITARY

CMOS

5 V

5

DIE OR CHIP

PLL or Frequency Synthesis Circuits

125 Cel

-55 Cel

Not Qualified

CD74HC297H

Renesas Electronics

MILITARY

CMOS

2/6

DIE OR CHIP

PLL or Frequency Synthesis Circuits

125 Cel

-55 Cel

Not Qualified

Phase Locked Loops (PLL) & Frequency Synthesis Circuits

Phase Locked Loops (PLL) and Frequency Synthesis Circuits are electronic circuits used to generate and control stable and precise frequencies for use in various applications, such as communication systems, signal processing, and instrumentation.

A PLL is a feedback system that compares the phase of an input signal to the phase of a reference signal and adjusts the output frequency to match the reference frequency. The basic components of a PLL include a phase detector, a low-pass filter, a voltage-controlled oscillator (VCO), and a frequency divider. The phase detector compares the phase of the input and reference signals and generates an error signal that is filtered and used to adjust the frequency of the VCO. The output of the VCO is divided by a frequency divider to generate the output frequency. PLLs are commonly used for frequency synthesis, clock recovery, and phase modulation/demodulation.

Frequency synthesis circuits are electronic circuits used to generate precise and stable frequencies by combining multiple signals with different frequencies. These circuits use various techniques, such as direct digital synthesis (DDS), fractional-N synthesis, and frequency mixing to generate frequencies. DDS is a technique that uses a digital signal generator to generate a waveform with a specific frequency, phase, and amplitude. Fractional-N synthesis is a technique that uses a PLL to generate a frequency that is a fraction of the reference frequency. Frequency mixing is a technique that combines two signals with different frequencies to generate a signal with a frequency equal to the difference between the two frequencies.

PLLs and frequency synthesis circuits are critical components in many electronic systems that require precise and stable frequencies. These circuits are used in communication systems, signal processing, instrumentation, and other applications where accurate frequency generation and control is required.