STMicroelectronics Other Function RF & Microwave Devices 40
| Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Screening Level | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Maximum Operating Temperature | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
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Matte Tin (Sn) - annealed |
e3 |
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MATTE TIN |
e3 |
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Matte Tin (Sn) - annealed |
e3 |
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Matte Tin (Sn) - annealed |
e3 |
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Tin/Silver (Sn/Ag) |
e2 |
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Matte Tin (Sn) - annealed |
e3 |
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Matte Tin (Sn) - annealed |
e3 |
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Tin/Silver (Sn/Ag) |
e2 |
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Matte Tin (Sn) - annealed |
e3 |
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Matte Tin (Sn) - annealed |
e3 |
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Matte Tin (Sn) - annealed |
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Other Function RF & Microwave Devices are electronic components that are designed to operate in the radio frequency (RF) and microwave frequency ranges, typically from 1 MHz to 300 GHz. These devices are used in various applications, including telecommunications, satellite communication, radar, wireless networks, and electronic warfare.
Some examples of Other Function RF & Microwave Devices include attenuators, circulators, isolators, mixers, power amplifiers, filters, and oscillators. Attenuators are used to reduce the power level of a signal, while circulators and isolators are used to separate signals traveling in different directions. Mixers are used to combine or multiply two signals, and power amplifiers are used to amplify the power of a signal. Filters are used to selectively pass or reject certain frequencies, and oscillators are used to generate a stable frequency signal.
Other Function RF & Microwave Devices are typically constructed using specialized materials and techniques to ensure high performance at high frequencies. Some of the commonly used materials include gallium arsenide (GaAs), indium phosphide (InP), and silicon germanium (SiGe). These materials are used to fabricate devices such as field-effect transistors (FETs), high electron mobility transistors (HEMTs), and heterojunction bipolar transistors (HBTs).