26 RF & Microwave Amplifiers 9

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
AFSC5G40E38T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS	1	COMPONENT	28	LCC26,.24X.4,40	50 ohm		125 Cel	27.1 dB				3700 MHz	4000 MHz
AFSC5G37E38T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS	1	COMPONENT	29	LCC26,.24X.4,20	50 ohm		125 Cel	25.4 dB	NICKEL PALLADIUM GOLD		e4	3600 MHz	3800 MHz
A3M37TL039T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS	1	COMPONENT	26	LCC26,.24X.4,40	50 ohm		125 Cel	26.1 dB	NICKEL PALLADIUM GOLD	I/P POWER-MAX (PEAK)=25DBM	e4	3600 MHz	3800 MHz
A3M34TL139T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS	1	COMPONENT	27	LCC26,.24X.4,20	50 ohm		125 Cel	25.6 dB		I/P POWER-MAX (PEAK)=25DBM		3300 MHz	3580 MHz
A3M35TL039T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS	1	COMPONENT	26	LCC26,.24X.4,40	50 ohm		125 Cel	26.5 dB		I/P POWER-MAX (PEAK)=25DBM		3300 MHz	3700 MHz
AFSC5G35E38T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS	1	COMPONENT	30	LCC26,.24X.4,40	50 ohm		125 Cel	29.3 dB	NICKEL PALLADIUM GOLD		e4	3400 MHz	3700 MHz
AFSC5G23E37T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS	1	COMPONENT	28	LCC26,.24X.4,20	50 ohm		125 Cel	32 dB		I/P POWER-MAX (PEAK)=25DBM		2300 MHz	2400 MHz
ACPM-7891-BLK	Broadcom		SURFACE MOUNT	26	PLASTIC/EPOXY	HYBRID	2		3/5	LCC26(UNSPEC)		RF/Microwave Amplifiers
ACPM-7891-TR1	Broadcom		SURFACE MOUNT	26	PLASTIC/EPOXY	HYBRID	2		3/5	LCC26(UNSPEC)		RF/Microwave Amplifiers

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.