7 RF & Microwave Amplifiers 19

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
QPA1019D	Qorvo	WIDE BAND HIGH POWER	SURFACE MOUNT	7		GAN	1	25 dBm	4	2000 mA	COMPONENT	22	DIE OR CHIP	50 ohm		85 Cel	34.4 dB	-40 Cel				4500 MHz	7000 MHz
BGB741L7ESD-E6327	Infineon Technologies		SURFACE MOUNT	7	PLASTIC/EPOXY	BIPOLAR	1			7.2 mA		3	LCC7(UNSPEC)		RF/Microwave Amplifiers				Gold (Au)		e4
MHW6342TN	NXP Semiconductors	WIDE BAND HIGH POWER	PANEL MOUNT	7	PLASTIC/EPOXY	BIPOLAR	1	6.25 dBm		340 mA	MODULE	24		75 ohm		100 Cel	34.5 dB	-20 Cel				40 MHz	550 MHz
ADCA3950AMLZ	Analog Devices	WIDE BAND HIGH POWER	PANEL MOUNT	7		PHEMT	1	75 dBm		490 mA	MODULE	24		75 ohm		85 Cel	25 dB	-30 Cel				45 MHz	1218 MHz
A3I20X050NR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	7	PLASTIC/EPOXY	LDMOS	1	20 dBm			COMPONENT	2.15/28		50 ohm		150 Cel	28 dB	-40 Cel	TIN		e3	1800 MHz	2200 MHz
A3I20X050GNR3	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	7	PLASTIC/EPOXY	LDMOS	1	20 dBm			COMPONENT	2.15/28		50 ohm		150 Cel	28 dB	-40 Cel				1800 MHz	2200 MHz
A3I20X050NR3	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	7	PLASTIC/EPOXY	LDMOS	1	20 dBm			COMPONENT	2.15/28		50 ohm		150 Cel	28 dB	-40 Cel				1800 MHz	2200 MHz
A3I20X050GNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	7	PLASTIC/EPOXY	LDMOS	1	20 dBm			COMPONENT	2.15/28		50 ohm		150 Cel	28 dB	-40 Cel	TIN		e3	1800 MHz	2200 MHz
MHW1915	NXP Semiconductors	NARROW BAND HIGH POWER	THROUGH HOLE MOUNT	7			1	17 dBm	2		COMPONENT	5,26		50 ohm		85 Cel	29 dB	-30 Cel				1930 MHz	1990 MHz
MHW6342T	NXP Semiconductors	WIDE BAND HIGH POWER	PANEL MOUNT	7	PLASTIC/EPOXY	BIPOLAR	1	6.25 dBm		340 mA	MODULE	24		75 ohm		100 Cel	34.5 dB	-20 Cel				40 MHz	550 MHz
BGA619	Infineon Technologies	NARROW BAND LOW POWER	SURFACE MOUNT	7	PLASTIC/EPOXY		1				COMPONENT	2.78	LCC7(UNSPEC)	50 ohm	RF/Microwave Amplifiers	85 Cel	2.2 dB	-35 Cel	Matte Tin (Sn)		e3
BGA728L7	Infineon Technologies		SURFACE MOUNT	7	PLASTIC/EPOXY		1					2.8	LCC7(UNSPEC)		RF/Microwave Amplifiers	85 Cel		-40 Cel
BGB741L7ESD	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	7	PLASTIC/EPOXY	BIPOLAR	1			7.2 mA	COMPONENT	3	LCC7(UNSPEC)	50 ohm	RF/Microwave Amplifiers	150 Cel	14 dB	-55 Cel	GOLD		e4	50 MHz	5500 MHz
BGA711L7	Infineon Technologies	NARROW BAND MEDIUM POWER	SURFACE MOUNT	7	PLASTIC/EPOXY		1	4 dBm			COMPONENT	2.8	LCC7(UNSPEC)	50 ohm	RF/Microwave Amplifiers	85 Cel	16.7 dB	-30 Cel		LOW NOISE		2110 MHz	2155 MHz
CGY52	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	7	PLASTIC/EPOXY	GAAS					COMPONENT	3/4.5	SO7,.28		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0	200 MHz	1800 MHz
BGA622L7	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	7	PLASTIC/EPOXY		1	6 dBm			COMPONENT	2.75	LCC7(UNSPEC)	50 ohm	RF/Microwave Amplifiers	150 Cel	16.2 dB	-65 Cel				500 MHz	6000 MHz
BGA622L7-E6327	Infineon Technologies		SURFACE MOUNT	7	PLASTIC/EPOXY		1					2.75	LCC7(UNSPEC)		RF/Microwave Amplifiers	150 Cel		-65 Cel
CGM1900C	Infineon Technologies	NARROW BAND MEDIUM POWER		7	CERAMIC	GAAS			5		COMPONENT	3.7	MODULE,7LEAD,.23	50 ohm	RF/Microwave Amplifiers	110 Cel	20 dB	-30 Cel				1850 MHz	1910 MHz
CGM800C	Infineon Technologies	NARROW BAND MEDIUM POWER		7	CERAMIC	GAAS			5		COMPONENT	3.7	MODULE,7LEAD,.23	50 ohm	RF/Microwave Amplifiers	110 Cel	20 dB	-30 Cel				824 MHz	849 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.