AEC-Q100 RF & Microwave Amplifiers 8

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
BGU7004,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY		AEC-Q100	1			14.4 mA		1.8	SOLCC6,.04,20		RF/Microwave Amplifiers	125 Cel		-40 Cel	TIN	e3
MAX2659ELT/V+T	Analog Devices		SURFACE MOUNT	6	PLASTIC/EPOXY	BICMOS	AEC-Q100	1			5.6 mA		1.8/3.3	SOLCC6,.04,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
MAX2659ELT/V+	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BICMOS	AEC-Q100	1	10 dBm		5.6 mA	COMPONENT	1.8/3	SOLCC6,.04,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16.5 dB	-40 Cel
QPL6207QTR7	Qorvo	NARROW BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	E-PHEMT	AEC-Q100	1	30 dBm	2.2	68 mA	COMPONENT	4.5	SOLCC8,.08,20	50 ohm		105 Cel	18.1 dB	-40 Cel			2320 MHz	2345 MHz
NSVG3117SG6T1G	Onsemi	WIDE BAND LOW POWER	SURFACE MOUNT	6			AEC-Q100	1			28 mA	COMPONENT	5	FL6,06,25	50 ohm		125 Cel	33.5 dB	-40 Cel			100 MHz	3000 MHz
NSVG3109SG6T1G	Onsemi	WIDE BAND LOW POWER	SURFACE MOUNT	6			AEC-Q100	1			20.5 mA	COMPONENT	3	FL6,06,25	50 ohm		85 Cel	24 dB	-40 Cel			100 MHz	3600 MHz
BGU7008,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY		AEC-Q100	1			15.9 mA		1.8	SOLCC6,.04,20		RF/Microwave Amplifiers	125 Cel		-40 Cel	TIN	e3
BGA2002,115	NXP Semiconductors				PLASTIC/EPOXY	BIPOLAR	AEC-Q100	1					2.5	SOT-343R		RF/Microwave Amplifiers				Tin (Sn)	e3

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.