Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Nominal Attenuation | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Minimum Operating Temperature | Terminal Finish | Maximum Insertion Loss | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Psemi |
VARIABLE ATTENUATOR |
23.01 dBm |
31 dB |
COMPONENT |
50 ohm |
105 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
2.8 dB |
I/P POWER-MAX(PULSE)=0.63W |
e4 |
.009 MHz |
6000 MHz |
|||||||||||
|
Psemi |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
24 |
CMOS |
31 dBm |
31 dB |
.2 mA |
COMPONENT |
3.3 |
LCC24,.16SQ,20 |
50 ohm |
105 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
2.8 dB |
e4 |
.009 MHz |
6000 MHz |
||||||
Lockheed Martin Microwave |
VARIABLE ATTENUATOR |
40 dBm |
1.3 |
MODULE |
105 Cel |
1 dB |
12400 MHz |
18000 MHz |
|||||||||||||||||
|
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
16 |
GAAS |
25 dBm |
1.58 |
31.5 dB |
5 mA |
COMPONENT |
-3/-5 |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
4.4 dB |
100 MHz |
13000 MHz |
|||||||
|
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
16 |
GAAS |
25 dBm |
1.58 |
31.5 dB |
5 mA |
COMPONENT |
-3/-5 |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
4.4 dB |
e3 |
100 MHz |
13000 MHz |
|||||
Lockheed Martin Microwave |
VARIABLE ATTENUATOR |
36.99 dBm |
1.7 |
MODULE |
105 Cel |
1.5 dB |
7000 MHz |
26500 MHz |
|||||||||||||||||
|
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
24 |
GAAS |
27 dBm |
31 dB |
6.5 mA |
COMPONENT |
+-5 |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
8 dB |
100 MHz |
33000 MHz |
||||||||
|
Analog Devices |
VARIABLE ATTENUATOR |
27.99 dBm |
31.5 dB |
COMPONENT |
50 ohm |
105 Cel |
-40 Cel |
CMOS COMPATIBLE, I/P POWER-MAX(PEAK)=1.26W |
100 MHz |
40000 MHz |
||||||||||||||
|
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
28 dBm |
1.22 |
31.5 dB |
COMPONENT |
5 |
LCC24,.16SQ,20 |
RF/Microwave Attenuators |
85 Cel |
-40 Cel |
MATTE TIN |
3 dB |
e3 |
0 MHz |
3800 MHz |
|||||
|
Analog Devices |
VARIABLE ATTENUATOR |
26.99 dBm |
15 dB |
COMPONENT |
50 ohm |
105 Cel |
-40 Cel |
MATTE TIN |
3 dB |
CMOS COMPATIBLE |
e3 |
100 MHz |
8000 MHz |
|||||||||||
|
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
12 |
CERAMIC |
GAAS |
25 dBm |
31.5 dB |
COMPONENT |
-5 |
LCC12,.2SQ |
50 ohm |
85 Cel |
-40 Cel |
5.2 dB |
0 MHz |
13000 MHz |
||||||||
|
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
12 |
CERAMIC |
GAAS |
25 dBm |
31.5 dB |
COMPONENT |
-5 |
LCC12,.2SQ |
50 ohm |
85 Cel |
-40 Cel |
5.2 dB |
0 MHz |
13000 MHz |
||||||||
|
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
CMOS |
27.99 dBm |
31.5 dB |
COMPONENT |
+-3.3 |
LCC24,.16SQ,20 |
50 ohm |
105 Cel |
-40 Cel |
CMOS COMPATIBLE, I/P POWER-MAX(PEAK)=1.26W |
.009 MHz |
40000 MHz |
||||||||
|
Psemi |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
CMOS |
34 dBm |
31 dB |
.2 mA |
COMPONENT |
2.5/5 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Attenuators |
85 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
3.2 dB |
I/P POWER-MAX(PULSE)=1.26W |
e4 |
.009 MHz |
8000 MHz |
|||
|
Analog Devices |
VARIABLE ATTENUATOR |
27.99 dBm |
31.5 dB |
COMPONENT |
50 ohm |
105 Cel |
-40 Cel |
CMOS COMPATIBLE, I/P POWER-MAX(PEAK)=1.26W |
100 MHz |
40000 MHz |
||||||||||||||
|
Analog Devices |
VARIABLE ATTENUATOR |
26.99 dBm |
31 dB |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
8 dB |
CMOS COMPATIBLE |
e3 |
100 MHz |
30000 MHz |
|||||||||||
|
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
25 dBm |
31 dB |
COMPONENT |
3/5 |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
2 dB |
CMOS COMPATIBLE |
e3 |
100 MHz |
3000 MHz |
|||||
|
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
24 |
GAAS |
27 dBm |
31 dB |
6.5 mA |
COMPONENT |
+-5 |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
8 dB |
e3 |
100 MHz |
33000 MHz |
||||||
|
Qorvo |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
24 dBm |
17 dB |
COMPONENT |
LCC16,.12SQ,20 |
RF/Microwave Attenuators |
2 dB |
0 MHz |
30000 MHz |
||||||||||||
|
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
26.99 dBm |
31 dB |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Attenuators |
85 Cel |
-40 Cel |
MATTE TIN |
2 dB |
CMOS COMPATIBLE |
e3 |
0 MHz |
3000 MHz |
||||
|
Qorvo |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
30 dBm |
1.43 |
31 dB |
COMPONENT |
3/5 |
LCC16,.12SQ,20 |
50 ohm |
105 Cel |
-40 Cel |
1.4 dB |
5 MHz |
6000 MHz |
||||||||
Honeywell |
VARIABLE ATTENUATOR |
35 dBm |
31 dB |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
NICKEL (10) PALLADIUM GOLD SILVER |
5.8 dB |
CMOS COMPATIBLE |
0 MHz |
4000 MHz |
|||||||||||||
|
Broadcom |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
36 dBm |
42 dB |
MODULE |
2.7 |
LCC6/8,.15SQ,28 |
50 ohm |
RF/Microwave Attenuators |
3.7 dB |
50 MHz |
4000 MHz |
||||||||||
|
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
26.99 dBm |
30 dB |
COMPONENT |
+-3.3 |
LCC16,.1SQ,16 |
50 ohm |
105 Cel |
-40 Cel |
3.5 dB |
CMOS COMPATIBLE, I/P POWER-MAX(PEAK)=1.26W |
100 MHz |
40000 MHz |
||||||||
|
Analog Devices |
VARIABLE ATTENUATOR |
30 dBm |
7 dB |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
1.4 dB |
e3 |
0 MHz |
6000 MHz |
||||||||||||
|
Psemi |
VARIABLE ATTENUATOR |
34 dBm |
31 dB |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
3.2 dB |
I/P POWER-MAX(PULSE)=1.26W |
e4 |
.009 MHz |
8000 MHz |
|||||||||||
Cobham Plc |
VARIABLE ATTENUATOR |
30 dBm |
1.3 |
2 dB |
COAXIAL |
50 ohm |
65 Cel |
-40 Cel |
SMA-F, HIGH RELIABILITY |
0 MHz |
2500 MHz |
||||||||||||||
Cobham Plc |
VARIABLE ATTENUATOR |
30 dBm |
1.3 |
4 dB |
COAXIAL |
50 ohm |
65 Cel |
-40 Cel |
SMA-F, HIGH RELIABILITY |
0 MHz |
2500 MHz |
||||||||||||||
|
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
28 dBm |
1.22 |
31.5 dB |
COMPONENT |
5 |
LCC24,.16SQ,20 |
RF/Microwave Attenuators |
85 Cel |
-40 Cel |
MATTE TIN |
3 dB |
e3 |
0 MHz |
3800 MHz |
|||||
|
Psemi |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
CMOS |
23.01 dBm |
31 dB |
.2 mA |
COMPONENT |
3.3 |
LCC32,.2SQ,20 |
50 ohm |
105 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
2.8 dB |
I/P POWER-MAX(PULSE)=0.63W |
e4 |
.009 MHz |
6000 MHz |
||||
|
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
26.99 dBm |
30 dB |
COMPONENT |
+-3.3 |
LCC16,.1SQ,16 |
50 ohm |
105 Cel |
-40 Cel |
3.5 dB |
CMOS COMPATIBLE, I/P POWER-MAX(PEAK)=1.26W |
100 MHz |
40000 MHz |
||||||||
|
Mini-circuits |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
20 |
PLASTIC/EPOXY |
CMOS |
23.98 dBm |
1.5 |
31.5 dB |
.1 mA |
COMPONENT |
+-3 |
LCC20,.16SQ,20 |
50 ohm |
RF/Microwave Attenuators |
85 Cel |
-40 Cel |
Tin (Sn) |
2.4 dB |
e3 |
0 MHz |
2400 MHz |
|||
|
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
CMOS |
27.99 dBm |
31.5 dB |
COMPONENT |
+-3.3 |
LCC24,.16SQ,20 |
50 ohm |
105 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
CMOS COMPATIBLE, I/P POWER-MAX(PEAK)=1.26W |
e4 |
.009 MHz |
40000 MHz |
||||||
|
Honeywell |
VARIABLE ATTENUATOR |
35 dBm |
31.5 dB |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
5.8 dB |
0 MHz |
4000 MHz |
||||||||||||||
|
Psemi |
VARIABLE ATTENUATOR |
|||||||||||||||||||||||
Cobham Plc |
VARIABLE ATTENUATOR |
30 dBm |
1.35 |
70 dB |
COAXIAL |
50 ohm |
75 Cel |
-20 Cel |
.7 dB |
0 MHz |
4000 MHz |
||||||||||||||
Honeywell |
VARIABLE ATTENUATOR |
||||||||||||||||||||||||
|
M/a-com Technology Solutions |
VARIABLE ATTENUATOR |
33.98 dBm |
2 |
31.5 dB |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
4.2 dB |
e3 |
0 MHz |
2000 MHz |
|||||||||||
|
Analog Devices |
VARIABLE ATTENUATOR |
28.06 dBm |
15.5 dB |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
2.7 dB |
e3 |
700 MHz |
3800 MHz |
||||||||||||
|
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
26.99 dBm |
31 dB |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Attenuators |
85 Cel |
-40 Cel |
MATTE TIN |
2 dB |
CMOS COMPATIBLE |
e3 |
0 MHz |
3000 MHz |
||||
|
Qorvo |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
30 dBm |
1.43 |
31 dB |
COMPONENT |
3/5 |
LCC16,.12SQ,20 |
50 ohm |
105 Cel |
-40 Cel |
1.4 dB |
5 MHz |
6000 MHz |
||||||||
|
Qorvo |
VARIABLE ATTENUATOR |
23.98 dBm |
17 dB |
COMPONENT |
2 dB |
0 MHz |
50000 MHz |
|||||||||||||||||
|
Analog Devices |
VARIABLE ATTENUATOR |
26.99 dBm |
15.5 dB |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
6.5 dB |
e3 |
100 MHz |
33000 MHz |
||||||||||||
|
M/a-com Technology Solutions |
VARIABLE ATTENUATOR |
|||||||||||||||||||||||
|
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
29 dBm |
7.75 dB |
COMPONENT |
3/5 |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
1.7 dB |
e3 |
0 MHz |
4000 MHz |
||||||
|
Qorvo |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
27 dBm |
25 dB |
3.5 mA |
COMPONENT |
3.3/5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Attenuators |
85 Cel |
-40 Cel |
50 MHz |
6000 MHz |
||||||||
|
Analog Devices |
VARIABLE ATTENUATOR |
29 dBm |
15 dB |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
2.6 dB |
CMOS COMPATIBLE |
e3 |
0 MHz |
5500 MHz |
|||||||||||
|
M/a-com Technology Solutions |
VARIABLE ATTENUATOR |
RF/Microwave attenuators are electronic devices designed to reduce the strength or amplitude of an RF or microwave signal without significantly affecting its waveform. They are used in a variety of applications, including signal conditioning, power level control, and impedance matching.
There are various types of RF/Microwave attenuators, including fixed, variable, and programmable. Fixed attenuators provide a fixed amount of attenuation and are used in applications where the signal level needs to be reduced by a specific amount. Variable attenuators allow for the adjustment of the signal level by rotating a knob or sliding a lever, and are used in applications where the signal level needs to be continuously adjusted. Programmable attenuators can be controlled electronically and offer greater flexibility in adjusting the signal level.
Attenuators can be designed using different technologies, such as resistive, capacitive, and diode-based. Resistive attenuators use resistors to dissipate energy and reduce signal strength. Capacitive attenuators use capacitors to block high-frequency signals and allow low-frequency signals to pass through. Diode-based attenuators use PIN diodes or varactor diodes to control signal strength.
RF/Microwave attenuators are used in a wide range of applications, including in wireless communication systems, test and measurement equipment, radar systems, and satellite communication systems. They play an important role in controlling signal levels and ensuring the integrity of signals in these systems.