CMOS RF/Microwave Attenuators 17

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Nominal Attenuation	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	Maximum Insertion Loss	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
PE43711A-Z	Psemi	VARIABLE ATTENUATOR	SURFACE MOUNT	24		CMOS	31 dBm		31 dB	.2 mA	COMPONENT	3.3	LCC24,.16SQ,20	50 ohm		105 Cel	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	2.8 dB		e4	.009 MHz	6000 MHz
ADRF5720BCCZN	Analog Devices	VARIABLE ATTENUATOR	SURFACE MOUNT	24	PLASTIC/EPOXY	CMOS	27.99 dBm		31.5 dB		COMPONENT	+-3.3	LCC24,.16SQ,20	50 ohm		105 Cel	-40 Cel			CMOS COMPATIBLE, I/P POWER-MAX(PEAK)=1.26W		.009 MHz	40000 MHz
PE43704MLCA-Z	Psemi	VARIABLE ATTENUATOR	SURFACE MOUNT	32	PLASTIC/EPOXY	CMOS	34 dBm		31 dB	.2 mA	COMPONENT	2.5/5	LCC32,.2SQ,20	50 ohm	RF/Microwave Attenuators	85 Cel	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	3.2 dB	I/P POWER-MAX(PULSE)=1.26W	e4	.009 MHz	8000 MHz
PE43712B-Z	Psemi	VARIABLE ATTENUATOR	SURFACE MOUNT	32	PLASTIC/EPOXY	CMOS	23.01 dBm		31 dB	.2 mA	COMPONENT	3.3	LCC32,.2SQ,20	50 ohm		105 Cel	-40 Cel	NICKEL PALLADIUM GOLD	2.8 dB	I/P POWER-MAX(PULSE)=0.63W	e4	.009 MHz	6000 MHz
DAT-31R5-SN+	Mini-circuits	VARIABLE ATTENUATOR	SURFACE MOUNT	20	PLASTIC/EPOXY	CMOS	23.98 dBm	1.5	31.5 dB	.1 mA	COMPONENT	+-3	LCC20,.16SQ,20	50 ohm	RF/Microwave Attenuators	85 Cel	-40 Cel	Tin (Sn)	2.4 dB		e3	0 MHz	2400 MHz
ADRF5720BCCZN-R7	Analog Devices	VARIABLE ATTENUATOR	SURFACE MOUNT	24	PLASTIC/EPOXY	CMOS	27.99 dBm		31.5 dB		COMPONENT	+-3.3	LCC24,.16SQ,20	50 ohm		105 Cel	-40 Cel	NICKEL PALLADIUM GOLD		CMOS COMPATIBLE, I/P POWER-MAX(PEAK)=1.26W	e4	.009 MHz	40000 MHz
DAT-31R5A-SP+	Mini-circuits	VARIABLE ATTENUATOR	SURFACE MOUNT	20	PLASTIC/EPOXY	CMOS	30 dBm	1.9	31.5 dB	.2 mA	COMPONENT	3		50 ohm		105 Cel	-40 Cel		3 dB			0 MHz	4000 MHz
RFSA2013TR7	Qorvo	VARIABLE ATTENUATOR	SURFACE MOUNT	16	PLASTIC/EPOXY	CMOS	30 dBm		30 dB		COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Attenuators	105 Cel	-40 Cel	TIN SILVER	3.5 dB		e2	50 MHz	6000 MHz
HRF-AT4521-TR	Honeywell	VARIABLE ATTENUATOR	SURFACE MOUNT	16	PLASTIC/EPOXY	CMOS	35.05 dBm		31 dB		COMPONENT	+-5	LCC16,.16SQ,25	50 ohm	RF/Microwave Attenuators	85 Cel	-40 Cel		3.4 dB	CMOS COMPATIBLE		0 MHz	2500 MHz
RFSA2013SR	Qorvo	VARIABLE ATTENUATOR	SURFACE MOUNT	16	PLASTIC/EPOXY	CMOS	30 dBm		30 dB		COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Attenuators	105 Cel	-40 Cel	TIN SILVER	3.5 dB		e2	50 MHz	6000 MHz
RFSA2013TR7AE	Qorvo		SURFACE MOUNT	16	PLASTIC/EPOXY	CMOS						5	LCC16,.12SQ,20		RF/Microwave Attenuators	85 Cel	-40 Cel	Tin/Silver (Sn/Ag)			e2
HRF-AT4610-FL-TR	Honeywell	VARIABLE ATTENUATOR	SURFACE MOUNT	24	PLASTIC/EPOXY	CMOS	35 dBm	1.58	31.5 dB	.05 mA	COMPONENT	5	LCC24,.16SQ,20	50 ohm		85 Cel	-40 Cel	SILVER FLASH OVER NICKEL PALLADIUM GOLD	5.8 dB			0 MHz	4000 MHz
PE43703MLI-Z	Psemi	VARIABLE ATTENUATOR	SURFACE MOUNT	32	PLASTIC/EPOXY	CMOS	23.01 dBm		31 dB	.35 mA	COMPONENT	3.3/5	LCC32,.2SQ,20	50 ohm	RF/Microwave Attenuators	85 Cel	-40 Cel	Matte Tin (Sn)	2.8 dB	CMOS COMPATIBLE	e3	.009 MHz	6000 MHz
PE43705A-Z	Psemi	VARIABLE ATTENUATOR	SURFACE MOUNT	32	PLASTIC/EPOXY	CMOS	28 dBm		31.75 dB	.2 mA	COMPONENT	2.5/5	LCC32,.2SQ,20	50 ohm		105 Cel	-40 Cel	NICKEL PALLADIUM GOLD	3.2 dB	CMOS COMPATIBLE	e4	50 MHz	8000 MHz
PE43705B-Z	Psemi	VARIABLE ATTENUATOR	SURFACE MOUNT	32	PLASTIC/EPOXY	CMOS	28 dBm		31.75 dB	.2 mA	COMPONENT	2.5/5	LCC32,.2SQ,20	50 ohm		105 Cel	-40 Cel		3.2 dB	CMOS COMPATIBLE		50 MHz	8000 MHz
ADRF5720	Analog Devices	VARIABLE ATTENUATOR	SURFACE MOUNT	24	PLASTIC/EPOXY	CMOS	28 dBm		31.5 dB		COMPONENT	+-3.3	LCC24,.16SQ,20	50 ohm		105 Cel	-55 Cel					.009 MHz	40000 MHz
MMT20303HT1	NXP Semiconductors	VARIABLE ATTENUATOR	SURFACE MOUNT	16	PLASTIC/EPOXY	CMOS	30 dBm	1.22	7 dB	3 mA	COMPONENT	5	LCC16,.12SQ,20	50 ohm		85 Cel	-40 Cel		1 dB			50 MHz	4000 MHz

RF/Microwave Attenuators

RF/Microwave attenuators are electronic devices designed to reduce the strength or amplitude of an RF or microwave signal without significantly affecting its waveform. They are used in a variety of applications, including signal conditioning, power level control, and impedance matching.

There are various types of RF/Microwave attenuators, including fixed, variable, and programmable. Fixed attenuators provide a fixed amount of attenuation and are used in applications where the signal level needs to be reduced by a specific amount. Variable attenuators allow for the adjustment of the signal level by rotating a knob or sliding a lever, and are used in applications where the signal level needs to be continuously adjusted. Programmable attenuators can be controlled electronically and offer greater flexibility in adjusting the signal level.

Attenuators can be designed using different technologies, such as resistive, capacitive, and diode-based. Resistive attenuators use resistors to dissipate energy and reduce signal strength. Capacitive attenuators use capacitors to block high-frequency signals and allow low-frequency signals to pass through. Diode-based attenuators use PIN diodes or varactor diodes to control signal strength.

RF/Microwave attenuators are used in a wide range of applications, including in wireless communication systems, test and measurement equipment, radar systems, and satellite communication systems. They play an important role in controlling signal levels and ensuring the integrity of signals in these systems.