Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Nominal Attenuation | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Minimum Operating Temperature | Terminal Finish | Maximum Insertion Loss | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
36 |
PLASTIC/EPOXY |
BICMOS |
20 dBm |
22 dB |
9.5 mA |
COMPONENT |
5 |
LCC36,.25SQ,20 |
50 ohm |
RF/Microwave Attenuators |
85 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
7 dB |
e3 |
250 MHz |
4000 MHz |
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|
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
30 dBm |
31.5 dB |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
4.3 dB |
e3 |
2200 MHz |
8000 MHz |
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|
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
30 dBm |
31.5 dB |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
2.2 dB |
CMOS COMPATIBLE |
e4 |
600 MHz |
3000 MHz |
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|
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
5 |
LCC16,.12SQ,20 |
RF/Microwave Attenuators |
85 Cel |
-40 Cel |
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|
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
18.06 dBm |
32 dB |
COMPONENT |
TSSOP8,.19 |
50 ohm |
RF/Microwave Attenuators |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
2.5 dB |
e3 |
0 MHz |
8000 MHz |
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|
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
27 dBm |
15.5 dB |
6.5 mA |
COMPONENT |
+-5 |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
6.5 dB |
CMOS COMPATIBLE |
e3 |
100 MHz |
30000 MHz |
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|
Analog Devices |
VARIABLE ATTENUATOR |
28.98 dBm |
15.75 dB |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
4 dB |
CMOS COMPATIBLE |
e3 |
0 MHz |
6000 MHz |
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|
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
25.05 dBm |
31 dB |
6.5 mA |
COMPONENT |
+-5 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Attenuators |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
8.5 dB |
e3 |
100 MHz |
33000 MHz |
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|
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
27 dBm |
30 dB |
COMPONENT |
+-3.3 |
LCC16,.1SQ,16 |
50 ohm |
105 Cel |
-40 Cel |
.009 MHz |
40000 MHz |
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|
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
25 dBm |
1.49 |
22 dB |
COMPONENT |
-3.3, 3.3 |
LCC16,.1SQ,16 |
50 ohm |
105 Cel |
-40 Cel |
10 MHz |
60000 MHz |
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|
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
3/5 |
SSOP16,.25 |
RF/Microwave Attenuators |
85 Cel |
-40 Cel |
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|
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
12 |
CERAMIC |
GAAS |
18 dBm |
24 dB |
COMPONENT |
LCC12,.12SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
GOLD OVER NICKEL |
4 dB |
e4 |
0 MHz |
18000 MHz |
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|
Analog Devices |
VARIABLE ATTENUATOR |
27.99 dBm |
45 dB |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
CMOS COMPATIBLE |
e3 |
0 MHz |
10000 MHz |
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|
Analog Devices |
FIXED ATTENUATOR |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
SOLCC6,.08,25 |
RF/Microwave Attenuators |
85 Cel |
-40 Cel |
MATTE TIN |
e3 |
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Analog Devices |
VARIABLE ATTENUATOR |
||||||||||||||||||||||||
|
Analog Devices |
VARIABLE ATTENUATOR |
43.98 dBm |
31 dB |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
8 dB |
CMOS COMPATIBLE |
e3 |
100 MHz |
30000 MHz |
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|
Analog Devices |
VARIABLE ATTENUATOR |
20 dBm |
31.75 dB |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
4.5 dB |
CMOS COMPATIBLE |
e3 |
10 MHz |
300 MHz |
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|
Analog Devices |
VARIABLE ATTENUATOR |
14 dB |
COMPONENT |
50 ohm |
85 Cel |
-55 Cel |
Gold (Au) |
3 dB |
e4 |
70000 MHz |
86000 MHz |
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Analog Devices |
VARIABLE ATTENUATOR |
26.02 dBm |
31 dB |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
3.3 dB |
CMOS COMPATIBLE |
e0 |
700 MHz |
3700 MHz |
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|
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
9 |
GAAS |
MIL-PRF-38534 Class K |
25 dBm |
1.58 |
31 dB |
6 mA |
COMPONENT |
+-5 |
DIE OR CHIP |
50 ohm |
85 Cel |
-55 Cel |
7.5 dB |
100 MHz |
40000 MHz |
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|
Analog Devices |
VARIABLE ATTENUATOR |
16.99 dBm |
18 dB |
COMPONENT |
50 ohm |
85 Cel |
-55 Cel |
Gold (Au) |
2 dB |
e4 |
17000 MHz |
27000 MHz |
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|
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
28 dBm |
6 dB |
COMPONENT |
3/5 |
TSOP6,.11,37 |
50 ohm |
85 Cel |
-40 Cel |
1.2 dB |
700 MHz |
4000 MHz |
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Analog Devices |
VARIABLE ATTENUATOR |
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|
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
26 dBm |
1.38 |
28 dB |
COMPONENT |
3/5 |
TSSOP8,.19 |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
2.1 dB |
e3 |
750 MHz |
2000 MHz |
|||||
|
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
LCC16,.12SQ,20 |
RF/Microwave Attenuators |
85 Cel |
-40 Cel |
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|
Analog Devices |
FIXED ATTENUATOR |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
28 dBm |
12 dB |
COMPONENT |
3/5 |
TSOP6,.11,37 |
50 ohm |
85 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
1.32 dB |
e3 |
700 MHz |
4000 MHz |
|||||||
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
10 |
PLASTIC/EPOXY |
GAAS |
30 dBm |
31 dB |
COMPONENT |
3/5 |
TSSOP10,.19,20 |
50 ohm |
RF/Microwave Attenuators |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
4.4 dB |
e0 |
700 MHz |
3800 MHz |
||||||
|
Analog Devices |
VARIABLE ATTENUATOR |
27.99 dBm |
6 dB |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
1.2 dB |
e3 |
700 MHz |
4000 MHz |
||||||||||||
|
Analog Devices |
VARIABLE ATTENUATOR |
26.02 dBm |
28 dB |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
2.1 dB |
e3 |
750 MHz |
2000 MHz |
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Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
28.06 dBm |
12 dB |
COMPONENT |
3/5 |
TSOP6,.11,37 |
50 ohm |
RF/Microwave Attenuators |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
1.6 dB |
e0 |
700 MHz |
4000 MHz |
||||||
|
Analog Devices |
VARIABLE ATTENUATOR |
26.02 dBm |
31 dB |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
3.3 dB |
CMOS COMPATIBLE |
e3 |
700 MHz |
3700 MHz |
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|
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
30 dBm |
28 dB |
COMPONENT |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Attenuators |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
e3 |
5000 MHz |
26500 MHz |
|||||||
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
30 dBm |
31 dB |
COMPONENT |
3/5 |
SSOP16,.25 |
50 ohm |
RF/Microwave Attenuators |
85 Cel |
-40 Cel |
TIN LEAD |
3.1 dB |
e0 |
700 MHz |
2700 MHz |
||||||
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
3/5 |
LCC24,.16SQ,20 |
RF/Microwave Attenuators |
85 Cel |
-40 Cel |
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Analog Devices |
VARIABLE ATTENUATOR |
||||||||||||||||||||||||
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
27.99 dBm |
6 dB |
COMPONENT |
3/5 |
TSOP6,.11,37 |
50 ohm |
RF/Microwave Attenuators |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
1.2 dB |
e0 |
700 MHz |
4000 MHz |
||||||
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
26.02 dBm |
28 dB |
COMPONENT |
3/5 |
TSSOP8,.19 |
50 ohm |
RF/Microwave Attenuators |
85 Cel |
-40 Cel |
TIN LEAD |
2.1 dB |
e0 |
750 MHz |
2000 MHz |
||||||
|
Analog Devices |
VARIABLE ATTENUATOR |
17.99 dBm |
33 dB |
COAXIAL |
50 ohm |
85 Cel |
-55 Cel |
Gold (Au) - with Nickel (Ni) barrier |
SMA |
e4 |
0 MHz |
2000 MHz |
||||||||||||
|
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
8 |
38535V;38534K;883S |
18 dBm |
23 dB |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
3.5 dB |
0 MHz |
8000 MHz |
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Analog Devices |
VARIABLE ATTENUATOR |
30 dBm |
28 dB |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
5000 MHz |
26500 MHz |
||||||||||||||
|
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
6.5 mA |
+-5 |
LCC24,.16SQ,20 |
RF/Microwave Attenuators |
85 Cel |
-40 Cel |
|||||||||||||
|
Analog Devices |
VARIABLE ATTENUATOR |
30 dBm |
31 dB |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
4.4 dB |
e3 |
700 MHz |
3800 MHz |
||||||||||||
|
Analog Devices |
GAAS |
-7 |
DIE OR CHIP |
RF/Microwave Attenuators |
125 Cel |
-55 Cel |
||||||||||||||||||
|
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
6.5 mA |
+-5 |
LCC24,.16SQ,20 |
RF/Microwave Attenuators |
85 Cel |
-40 Cel |
|||||||||||||
|
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
30 dBm |
31 dB |
COMPONENT |
3/5 |
SSOP16,.25 |
50 ohm |
RF/Microwave Attenuators |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
3.1 dB |
e3 |
700 MHz |
2700 MHz |
|||||
|
Analog Devices |
VARIABLE ATTENUATOR |
27.99 dBm |
12 dB |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
1.6 dB |
e3 |
700 MHz |
4000 MHz |
||||||||||||
Analog Devices |
VARIABLE ATTENUATOR |
||||||||||||||||||||||||
|
Analog Devices |
VARIABLE ATTENUATOR |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
30 dBm |
28 dB |
COMPONENT |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
5000 MHz |
26500 MHz |
RF/Microwave attenuators are electronic devices designed to reduce the strength or amplitude of an RF or microwave signal without significantly affecting its waveform. They are used in a variety of applications, including signal conditioning, power level control, and impedance matching.
There are various types of RF/Microwave attenuators, including fixed, variable, and programmable. Fixed attenuators provide a fixed amount of attenuation and are used in applications where the signal level needs to be reduced by a specific amount. Variable attenuators allow for the adjustment of the signal level by rotating a knob or sliding a lever, and are used in applications where the signal level needs to be continuously adjusted. Programmable attenuators can be controlled electronically and offer greater flexibility in adjusting the signal level.
Attenuators can be designed using different technologies, such as resistive, capacitive, and diode-based. Resistive attenuators use resistors to dissipate energy and reduce signal strength. Capacitive attenuators use capacitors to block high-frequency signals and allow low-frequency signals to pass through. Diode-based attenuators use PIN diodes or varactor diodes to control signal strength.
RF/Microwave attenuators are used in a wide range of applications, including in wireless communication systems, test and measurement equipment, radar systems, and satellite communication systems. They play an important role in controlling signal levels and ensuring the integrity of signals in these systems.