20 RF/Microwave Mixers 25

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Maximum Input Power (CW)	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	Maximum Conversion Loss	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
HMC1056LP4BETR	Analog Devices	IMAGE REJECTION	SURFACE MOUNT	20	PLASTIC/EPOXY	GAAS	16 dBm		COMPONENT		LCC20,.16SQ,20	50 ohm		85 Cel	-40 Cel	MATTE TIN	11 dB		e3	8000 MHz	12000 MHz
AD831AP-REEL7	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	20	PLASTIC/EPOXY	BIPOLAR			MODULE	+-5	LDCC20,.4SQ	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	TIN LEAD			e0
AD831APZ-REEL7	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	20	PLASTIC/EPOXY	BIPOLAR			MODULE	+-5	LDCC20,.4SQ	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	MATTE TIN			e3
ADL5353XCPZ-WP	Analog Devices		SURFACE MOUNT	20	PLASTIC/EPOXY	BICMOS				5	LCC20,.20SQ,25		RF/Microwave Mixers	85 Cel	-40 Cel
AD831APZ	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	20	PLASTIC/EPOXY	BIPOLAR			MODULE	+-5	LDCC20,.4SQ	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	MATTE TIN			e3
MAX9984ETP+	Analog Devices		SURFACE MOUNT	20	PLASTIC/EPOXY	BICMOS		265 mA		5	LCC20,.20SQ,25		RF/Microwave Mixers	85 Cel	-40 Cel	Matte Tin (Sn) - annealed			e3
MAX9984ETP+T	Analog Devices		SURFACE MOUNT	20	PLASTIC/EPOXY	BICMOS		265 mA		5	LCC20,.20SQ,25		RF/Microwave Mixers	85 Cel	-40 Cel	Matte Tin (Sn) - annealed			e3
ADL5367ACPZ-R7	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	20	PLASTIC/EPOXY	BICMOS	20 dBm		COMPONENT	3.3/5	LCC20,.20SQ,25	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	MATTE TIN	8.5 dB	HIGH ISOLATION	e3	500 MHz	1700 MHz
AD831AP	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	20	PLASTIC/EPOXY	BIPOLAR			MODULE	+-5	LDCC20,.4SQ	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	TIN LEAD			e0
ADL5357ACPZ-WP	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	20	PLASTIC/EPOXY	BICMOS	20 dBm		COMPONENT	3.3/5	LCC20,.20SQ,25	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	Matte Tin (Sn)		HIGH ISOLATION	e3	500 MHz	1700 MHz
ADL5365ACPZ-R7	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	20	PLASTIC/EPOXY	BICMOS	20 dBm		COMPONENT	3.3/5	LCC20,.20SQ,25	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	Matte Tin (Sn)	8.4 dB	HIGH ISOLATION	e3	1200 MHz	2500 MHz
ADL5355ACPZ-WP	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	20	PLASTIC/EPOXY	BICMOS	20 dBm		COMPONENT	3.3/5	LCC20,.20SQ,25	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	Matte Tin (Sn)		HIGH ISOLATION	e3	1200 MHz	2500 MHz
ADL5353XCPZ-R7	Analog Devices		SURFACE MOUNT	20	PLASTIC/EPOXY	BICMOS				5	LCC20,.20SQ,25		RF/Microwave Mixers	85 Cel	-40 Cel
ADL5357ACPZ-R7	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	20	PLASTIC/EPOXY	BICMOS	20 dBm		COMPONENT	3.3/5	LCC20,.20SQ,25	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	Matte Tin (Sn)		HIGH ISOLATION	e3	500 MHz	1700 MHz
ADL5355ACPZ-R7	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	20	PLASTIC/EPOXY	BICMOS	20 dBm		COMPONENT	3.3/5	LCC20,.20SQ,25	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	MATTE TIN		HIGH ISOLATION	e3	1200 MHz	2500 MHz
SA631DK	NXP Semiconductors	DOUBLE BALANCED	SURFACE MOUNT	20	PLASTIC/EPOXY	BICMOS	20 dBm			3	SSOP20,.25		RF/Microwave Mixers	85 Cel	-40 Cel					800 MHz	1000 MHz
SA611DK	NXP Semiconductors	DOUBLE BALANCED	SURFACE MOUNT	20	PLASTIC/EPOXY		20 dBm		COMPONENT	3/5	SSOP20,.25		RF/Microwave Mixers	85 Cel	-40 Cel					800 MHz	1000 MHz
PMB2210T	Infineon Technologies		SURFACE MOUNT	20	PLASTIC/EPOXY					5,5/7	SOP20,.4		RF/Microwave Mixers	70 Cel	0 Cel	Tin/Lead (Sn/Pb)			e0
UPC8002GR-E1-A	Renesas Electronics		SURFACE MOUNT	20	PLASTIC/EPOXY	BIPOLAR		2.2 mA		3	SSOP20,.25		RF/Microwave Mixers	85 Cel	-30 Cel
UPC8002GR-E2-A	Renesas Electronics		SURFACE MOUNT	20	PLASTIC/EPOXY	BIPOLAR		2.2 mA		3	SSOP20,.25		RF/Microwave Mixers	85 Cel	-30 Cel
F1763NBGI	Renesas Electronics		SURFACE MOUNT	20	PLASTIC/EPOXY			215 mA		5	LCC20,.20SQ,25		RF/Microwave Mixers			TIN			e3
UPC2753GR-E1	Renesas Electronics		SURFACE MOUNT	20	PLASTIC/EPOXY	BIPOLAR		8.5 mA		3	SSOP20,.25		RF/Microwave Mixers	85 Cel	-40 Cel	Tin/Lead (Sn/Pb)			e0
UPC8002GR	Renesas Electronics		SURFACE MOUNT	20	PLASTIC/EPOXY	BIPOLAR		2.2 mA		3	SSOP20,.25		RF/Microwave Mixers	85 Cel	-30 Cel	Tin/Lead (Sn/Pb)			e0
UPC8002GR-A	Renesas Electronics		SURFACE MOUNT	20	PLASTIC/EPOXY	BIPOLAR		2.2 mA		3	SSOP20,.25		RF/Microwave Mixers	85 Cel	-30 Cel
UPC2753GR-E2	Renesas Electronics		SURFACE MOUNT	20	PLASTIC/EPOXY	BIPOLAR		8.5 mA		3	SSOP20,.25		RF/Microwave Mixers	85 Cel	-40 Cel	Tin/Lead (Sn/Pb)			e0

RF/Microwave Mixers

RF/microwave mixers are electronic devices used in radio frequency (RF) and microwave systems to convert one frequency to another. They perform frequency translation by multiplying two input signals, a local oscillator (LO) signal and a radio frequency (RF) or intermediate frequency (IF) signal, to produce an output signal that has the sum and difference frequencies of the inputs.

RF/microwave mixers are commonly used in a variety of applications, including frequency conversion, phase detection, modulation and demodulation, and signal generation. They are widely used in telecommunications, radar systems, navigation systems, and satellite communication systems.

RF/microwave mixers are available in various types, including diode mixers, transistor mixers, and monolithic microwave integrated circuit (MMIC) mixers. The choice of mixer depends on the application requirements, such as the desired frequency range, signal bandwidth, conversion gain, and noise figure.