6 RF/Microwave Mixers 23

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	Maximum Conversion Loss	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
RMS-30	Mini-circuits	DOUBLE BALANCED	SURFACE MOUNT	6	CERAMIC		17 dBm	2.16		COMPONENT		DILCC6,.25		RF/Microwave Mixers	85 Cel	-40 Cel	TIN LEAD	9.8 dB		e0	200 MHz	3000 MHz
RMS-30+	Mini-circuits	DOUBLE BALANCED	SURFACE MOUNT	6	CERAMIC		17 dBm	2.16		COMPONENT		DILCC6,.25		RF/Microwave Mixers	85 Cel	-40 Cel	GOLD OVER NICKEL	9.8 dB		e4	200 MHz	3000 MHz
JMS-2LH	Mini-circuits	DOUBLE BALANCED	SURFACE MOUNT	6	CERAMIC		17 dBm	2.67		COMPONENT		SMDIP6,.3		RF/Microwave Mixers	85 Cel	-40 Cel	Tin/Lead (Sn/Pb)	9 dB		e0	20 MHz	1000 MHz
JMS-2LH+	Mini-circuits	DOUBLE BALANCED	SURFACE MOUNT	6	CERAMIC		17 dBm	2.67		COMPONENT		SMDIP6,.3		RF/Microwave Mixers	85 Cel	-40 Cel	Tin (Sn) - with Nickel (Ni) barrier	9 dB		e3	20 MHz	1000 MHz
LRMS-30J+	Mini-circuits	DOUBLE BALANCED	SURFACE MOUNT	6	CERAMIC		17 dBm	6.26		COMPONENT		SMDIP6,.4		RF/Microwave Mixers	85 Cel	-40 Cel	Tin (Sn) - with Nickel (Ni) barrier	9.8 dB		e3	200 MHz	3000 MHz
LRMS-30J	Mini-circuits	DOUBLE BALANCED	SURFACE MOUNT	6	CERAMIC		17 dBm	6.26		COMPONENT		SMDIP6,.4		RF/Microwave Mixers	85 Cel	-40 Cel	TIN LEAD	9.8 dB		e0	200 MHz	3000 MHz
LRMS-1MH	Mini-circuits	DOUBLE BALANCED	SURFACE MOUNT	6	CERAMIC		23 dBm	1.96		COMPONENT		GWDIP6,.4		RF/Microwave Mixers	85 Cel	-40 Cel	Tin/Lead (Sn/Pb)	8 dB		e0	2 MHz	500 MHz
LRMS-1MH+	Mini-circuits	DOUBLE BALANCED	SURFACE MOUNT	6	CERAMIC		23 dBm	1.96		COMPONENT		GWDIP6,.4		RF/Microwave Mixers	85 Cel	-40 Cel	Tin (Sn) - with Nickel (Ni) barrier	8 dB		e3	2 MHz	500 MHz
RMS-1MH+	Mini-circuits	DOUBLE BALANCED	SURFACE MOUNT	6	CERAMIC		23 dBm	2.6		COMPONENT		DILCC6,.25		RF/Microwave Mixers	100 Cel	-55 Cel	Gold (Au) - with Nickel (Ni) barrier	8 dB		e4	2 MHz	500 MHz
RMS-1MH	Mini-circuits	DOUBLE BALANCED	SURFACE MOUNT	6	CERAMIC		23 dBm	2.6		COMPONENT		DILCC6,.25		RF/Microwave Mixers	100 Cel	-55 Cel	Tin/Lead (Sn/Pb)	8 dB		e0	2 MHz	500 MHz
ADE-1L	Mini-circuits	DOUBLE BALANCED	SURFACE MOUNT	6	PLASTIC/EPOXY		17 dBm	2.25		COMPONENT		FL6,.2,100	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	TIN LEAD	8 dB	IMAGE REJECTION	e0	2 MHz	500 MHz
ADE-1L+	Mini-circuits	DOUBLE BALANCED	SURFACE MOUNT	6	PLASTIC/EPOXY		17 dBm	2.25		COMPONENT		FL6,.2,100	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	TIN OVER NICKEL	8 dB	IMAGE REJECTION	e3	2 MHz	500 MHz
SYM-18H	Mini-circuits	DOUBLE BALANCED	SURFACE MOUNT	6	PLASTIC/EPOXY		23 dBm	2.61		COMPONENT		LCC6/8,.37X.5,170		RF/Microwave Mixers	85 Cel	-40 Cel	TIN LEAD	8.9 dB	HIGH ISOLATION	e0	5 MHz	1800 MHz
SYM-18H+	Mini-circuits	DOUBLE BALANCED	SURFACE MOUNT	6	PLASTIC/EPOXY		23 dBm	2.61		COMPONENT		LCC6/8,.37X.5,170		RF/Microwave Mixers	85 Cel	-40 Cel	Gold (Au) - with Nickel (Ni) barrier	8.9 dB	HIGH ISOLATION	e4	5 MHz	1800 MHz
SYM-30DHW+	Mini-circuits	DOUBLE BALANCED	SURFACE MOUNT	6	PLASTIC/EPOXY		23 dBm	1.67		COMPONENT		LCC6/8,.37X.5,170		RF/Microwave Mixers	85 Cel	-40 Cel	GOLD OVER NICKEL	9.1 dB	USABLE TO 3 GHZ	e4	5 MHz	3000 MHz
SYM-30DHW	Mini-circuits	DOUBLE BALANCED	SURFACE MOUNT	6	PLASTIC/EPOXY		23 dBm	1.67		COMPONENT		LCC6/8,.37X.5,170		RF/Microwave Mixers	85 Cel	-40 Cel	TIN LEAD	9.1 dB	USABLE TO 3 GHZ	e0	5 MHz	3000 MHz
ADE-1LH+	Mini-circuits	DOUBLE BALANCED	SURFACE MOUNT	6	PLASTIC/EPOXY		17 dBm	3.01		COMPONENT		FL6,.2,100		RF/Microwave Mixers	85 Cel	-40 Cel	Tin (Sn) - with Nickel (Ni) barrier	8.2 dB		e3	.5 MHz	500 MHz
ADE-1LH	Mini-circuits	DOUBLE BALANCED	SURFACE MOUNT	6	PLASTIC/EPOXY		17 dBm	3.01		COMPONENT		FL6,.2,100		RF/Microwave Mixers	85 Cel	-40 Cel	TIN LEAD	8.2 dB		e0	.5 MHz	500 MHz
HMC264LM3	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	13 dBm			COMPONENT	3/4	LCC6(UNSPEC)	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	GOLD OVER NICKEL	12 dB		e4	20000 MHz	30000 MHz
HMC264LM3TR	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS				COMPONENT	3/4	LCC6,.2SQ,40	50 ohm		85 Cel	-40 Cel		12 dB			20000 MHz	30000 MHz
SPM5001	Onsemi		SURFACE MOUNT	6	PLASTIC/EPOXY							FL6,.07,25		RF/Microwave Mixers
BGA2022	NXP Semiconductors	DOUBLE BALANCED	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	10 dBm	2	8 mA	COMPONENT	2.8	TSSOP6,.08	50 ohm	RF/Microwave Mixers			Tin (Sn)		HIGH ISOLATION	e3	880 MHz	2450 MHz
BGA2022,115	NXP Semiconductors	DOUBLE BALANCED	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	10 dBm	2	8 mA	COMPONENT	2.8	TSSOP6,.08	50 ohm	RF/Microwave Mixers			Tin (Sn)			e3	880 MHz	2450 MHz

RF/Microwave Mixers

RF/microwave mixers are electronic devices used in radio frequency (RF) and microwave systems to convert one frequency to another. They perform frequency translation by multiplying two input signals, a local oscillator (LO) signal and a radio frequency (RF) or intermediate frequency (IF) signal, to produce an output signal that has the sum and difference frequencies of the inputs.

RF/microwave mixers are commonly used in a variety of applications, including frequency conversion, phase detection, modulation and demodulation, and signal generation. They are widely used in telecommunications, radar systems, navigation systems, and satellite communication systems.

RF/microwave mixers are available in various types, including diode mixers, transistor mixers, and monolithic microwave integrated circuit (MMIC) mixers. The choice of mixer depends on the application requirements, such as the desired frequency range, signal bandwidth, conversion gain, and noise figure.