SINGLE BALANCED RF/Microwave Mixers 19

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	Maximum Conversion Loss	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
AMMC-6545-W10	Broadcom	SINGLE BALANCED					25 dBm			COMPONENT		DIE OR CHIP	50 ohm	RF/Microwave Mixers				12 dB			18000 MHz	45000 MHz
HMC277MS8E	Analog Devices	SINGLE BALANCED					13 dBm			COMPONENT			50 ohm		85 Cel	-40 Cel	Matte Tin (Sn)	10.5 dB		e3	700 MHz	1200 MHz
HMC277MS8TR	Analog Devices	SINGLE BALANCED
HMC272AMS8TR	Analog Devices	SINGLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS						TSSOP8,.19		RF/Microwave Mixers	85 Cel	-40 Cel
HMC277MS8ETR	Analog Devices	SINGLE BALANCED															Matte Tin (Sn)			e3
HMC272AMS8	Analog Devices	SINGLE BALANCED					13 dBm			COMPONENT			50 ohm		85 Cel	-40 Cel	Tin/Lead (Sn/Pb)	10.5 dB		e0	1700 MHz	3000 MHz
HMC277MS8	Analog Devices	SINGLE BALANCED					13 dBm			COMPONENT			50 ohm		85 Cel	-40 Cel	Tin/Lead (Sn/Pb)	10.5 dB		e0	700 MHz	1200 MHz
HMC272MS8E	Analog Devices	SINGLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	13 dBm			COMPONENT		TSSOP8,.19	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	Matte Tin (Sn)	11 dB		e3	1700 MHz	3000 MHz
HMC272AMS8E	Analog Devices	SINGLE BALANCED					13 dBm			COMPONENT			50 ohm		85 Cel	-40 Cel	MATTE TIN	10.5 dB		e3	1700 MHz	3000 MHz
HMC272AMS8ETR	Analog Devices	SINGLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS						TSSOP8,.19		RF/Microwave Mixers	85 Cel	-40 Cel
HMC485AMS8GE	Analog Devices	SINGLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	27 dBm			COMPONENT	5	TSSOP8,.19			85 Cel	-40 Cel		11 dB	HIGH DYNAMIC RANGE		1700 MHz	2400 MHz
HMC333	Analog Devices	SINGLE BALANCED					13 dBm			COMPONENT			50 ohm		85 Cel	-40 Cel	Tin/Lead (Sn/Pb)	11 dB		e0	3000 MHz	3800 MHz
HMC333E	Analog Devices	SINGLE BALANCED					13 dBm			COMPONENT			50 ohm		85 Cel	-40 Cel	Matte Tin (Sn)	11 dB		e3	3000 MHz	3800 MHz
ADRF6604ACPZ	Analog Devices	SINGLE BALANCED	SURFACE MOUNT	40	PLASTIC/EPOXY	BICMOS				COMPONENT	5	LCC40,.24SQ,20	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel					2500 MHz	2900 MHz
LTC5556IUH#PBF	Analog Devices	SINGLE BALANCED	SURFACE MOUNT	32	PLASTIC/EPOXY	CMOS	20 dBm	1.92	450 mA	COMPONENT	3.3	LCC32,.2SQ,20	200 ohm		105 Cel	-40 Cel	MATTE TIN			e3	1500 MHz	7000 MHz
LTC5556IUH#TRMPBF	Analog Devices	SINGLE BALANCED	SURFACE MOUNT	32	PLASTIC/EPOXY		20 dBm		450 mA	COMPONENT	3.3	LCC32,.2SQ,20	200 ohm		105 Cel	-40 Cel					1500 MHz	7000 MHz
LTC5556IUH#TRPBF	Analog Devices	SINGLE BALANCED	SURFACE MOUNT	32	PLASTIC/EPOXY	CMOS	20 dBm	1.92	450 mA	COMPONENT	3.3	LCC32,.2SQ,20	200 ohm		105 Cel	-40 Cel	MATTE TIN			e3	1500 MHz	7000 MHz
AMMC-6545	Broadcom	SINGLE BALANCED
AMMC-6545-W50	Broadcom	SINGLE BALANCED					25 dBm			COMPONENT		DIE OR CHIP	50 ohm	RF/Microwave Mixers				12 dB			18000 MHz	45000 MHz

RF/Microwave Mixers

RF/microwave mixers are electronic devices used in radio frequency (RF) and microwave systems to convert one frequency to another. They perform frequency translation by multiplying two input signals, a local oscillator (LO) signal and a radio frequency (RF) or intermediate frequency (IF) signal, to produce an output signal that has the sum and difference frequencies of the inputs.

RF/microwave mixers are commonly used in a variety of applications, including frequency conversion, phase detection, modulation and demodulation, and signal generation. They are widely used in telecommunications, radar systems, navigation systems, and satellite communication systems.

RF/microwave mixers are available in various types, including diode mixers, transistor mixers, and monolithic microwave integrated circuit (MMIC) mixers. The choice of mixer depends on the application requirements, such as the desired frequency range, signal bandwidth, conversion gain, and noise figure.