Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Compression Point (1 dB) | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Minimum Operating Temperature | Terminal Finish | Minimum Isolation | Maximum Insertion Loss | Additional Features | Nominal On Time | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency | Port Termination |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Analog Devices |
SPDT |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
26.99 dBm |
23 dBm |
COMPONENT |
-5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-55 Cel |
Matte Tin (Sn) |
33 dB |
2.4 dB |
HIGH ISOLATION |
.006 us |
e3 |
0 MHz |
14000 MHz |
|||||
|
Analog Devices |
SP4T |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
1 |
25 dBm |
1.13 |
27 dBm |
COMPONENT |
+-3.3 |
LCC24,.12SQ,16 |
50 ohm |
105 Cel |
-40 Cel |
.014 us |
100 MHz |
44000 MHz |
ABSORPTIVE |
||||||||||
|
Analog Devices |
SPDT |
SURFACE MOUNT |
16 |
1 |
28 dBm |
.2 mA |
37 dBm |
COMPONENT |
+3.3/-2.5 |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
18 dB |
2 dB |
2.7 us |
e4 |
.009 MHz |
13000 MHz |
ABSORPTIVE |
|||||||
|
Renesas Electronics |
SPDT |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
36 dBm |
COMPONENT |
2.8 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-45 Cel |
Tin/Bismuth (Sn/Bi) |
24 dB |
.5 dB |
e6 |
500 MHz |
2500 MHz |
||||||||
|
Analog Devices |
SPDT |
SURFACE MOUNT |
20 |
1 |
28 dBm |
1.17 |
COMPONENT |
3.3 |
LCC20,.12SQ,16 |
50 ohm |
105 Cel |
-40 Cel |
I/P POWER-MAX(PEAK)=3.98W |
.055 us |
24000 MHz |
32000 MHz |
REFLECTIVE |
|||||||||||
|
Renesas Electronics |
SPDT |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
30 dBm |
20 dBm |
COMPONENT |
3 |
TSSOP6,.08 |
RF/Microwave Switches |
85 Cel |
-45 Cel |
Tin/Bismuth (Sn/Bi) |
20 dB |
.6 dB |
e6 |
50 MHz |
3000 MHz |
||||||||
Psemi |
SPST |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
CMOS |
1 |
24 dBm |
1.22 |
.04 mA |
33 dBm |
COMPONENT |
3 |
SOLCC6,.12,38 |
50 ohm |
85 Cel |
-40 Cel |
40 dB |
1.8 dB |
HIGH ISOLATION |
2 us |
0 MHz |
5000 MHz |
ABSORPTIVE |
||||||
|
TE Connectivity |
SPDT |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
5 |
TSSOP8,.19 |
RF/Microwave Switches |
85 Cel |
-40 Cel |
51 dB |
.7 dB |
.015 us |
3000 MHz |
|||||||||||||
|
Psemi |
SP8T |
SURFACE MOUNT |
24 |
CMOS |
1 |
33 dBm |
1.12 |
.2 mA |
COMPONENT |
3.3 |
LCC24,.16SQ,20 |
50 ohm |
105 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
25 dB |
2.8 dB |
HIGH LINEARITY AND ISOLATION |
.227 us |
e4 |
10 MHz |
8000 MHz |
ABSORPTIVE |
|||||
|
Hittite Microwave |
SPDT |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
26.02 dBm |
24 dBm |
COMPONENT |
5 |
TSSOP8,.19 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
30 dB |
1.1 dB |
CMOS/TTL COMPATIBLE |
e3 |
0 MHz |
3500 MHz |
|||||||
|
Qorvo |
SPDT |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
2 |
33 dBm |
1.06 |
.1 mA |
COMPONENT |
5 |
50 ohm |
105 Cel |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
32 dB |
.4 dB |
5 us |
e4 |
5 MHz |
6000 MHz |
||||||||
|
Infineon Technologies |
DPDT |
SURFACE MOUNT |
10 |
PLASTIC/EPOXY |
2 |
32 dBm |
1.05 |
COMPONENT |
3 |
LCC10,.05X.06,16 |
50 ohm |
85 Cel |
-30 Cel |
Gold (Au) |
22 dB |
.55 dB |
e4 |
100 MHz |
3000 MHz |
|||||||||
|
Qorvo |
SPDT |
SURFACE MOUNT |
16 |
1 |
27 dBm |
1.29 |
COMPONENT |
0/-5 |
LCC16,.1SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
32 dB |
2.2 dB |
HIGH ISOLATION |
.011 us |
e4 |
0 MHz |
18000 MHz |
||||||||
|
Qorvo |
SP4T |
SURFACE MOUNT |
24 |
1 |
27 dBm |
1.78 |
8 mA |
COMPONENT |
-5 |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
22 dB |
3.6 dB |
HIGH ISOLATION |
e4 |
0 MHz |
20000 MHz |
ABSORPTIVE |
|||||||
|
Skyworks Solutions |
SP6T |
SURFACE MOUNT |
14 |
1 |
37.5 dBm |
5 |
.05 mA |
COMPONENT |
2.6 |
SOLCC14,.08,16 |
50 ohm |
85 Cel |
-40 Cel |
15 dB |
.95 dB |
1.75 us |
100 MHz |
6000 MHz |
||||||||||
|
Renesas Electronics |
SPDT |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
CMOS |
1 |
23.01 dBm |
21 dBm |
COMPONENT |
2.8 |
FL6,.047,20 |
RF/Microwave Switches |
85 Cel |
-45 Cel |
Tin/Bismuth (Sn/Bi) |
20 dB |
1.2 dB |
e6 |
50 MHz |
2500 MHz |
||||||||
Analog Devices |
SPDT |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
25.91 dBm |
29 dBm |
COMPONENT |
TSSOP8,.19 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
TIN LEAD |
30 dB |
1.1 dB |
CMOS COMPATIBLE |
.005 us |
e0 |
0 MHz |
3500 MHz |
ABSORPTIVE |
|||||||
|
Analog Devices |
SPDT |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
25.91 dBm |
29 dBm |
COMPONENT |
TSSOP8,.19 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
MATTE TIN |
30 dB |
1.1 dB |
CMOS COMPATIBLE |
.005 us |
e3 |
0 MHz |
3500 MHz |
ABSORPTIVE |
||||||
|
Analog Devices |
SP3T |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
26.99 dBm |
26 dBm |
COMPONENT |
5 |
SSOP16,.25 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
26 dB |
1 dB |
CMOS/TTL COMPATIBLE |
.15 us |
e3 |
0 MHz |
3500 MHz |
ABSORPTIVE |
||||
|
Hittite Microwave |
SPDT |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
2 |
30 dBm |
31 dBm |
COMPONENT |
5 |
TSSOP8,.19 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
42 dB |
2.1 dB |
HIGH ISOLATION |
.12 us |
e3 |
0 MHz |
4000 MHz |
||||||
|
Hittite Microwave |
SPDT |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
2 |
31 dBm |
5 |
TSSOP8,.19 |
RF/Microwave Switches |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
42 dB |
2.1 dB |
.12 us |
e3 |
4000 MHz |
|||||||||||
|
Analog Devices |
SPDT |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
30 dBm |
23 dBm |
COMPONENT |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
MATTE TIN |
33 dB |
2.5 dB |
HIGH ISOLATION |
.006 us |
e3 |
0 MHz |
20000 MHz |
|||||||
Psemi |
SPDT |
SURFACE MOUNT |
20 |
PLASTIC/EPOXY |
CMOS |
1 |
25 dBm |
1.22 |
.2 mA |
COMPONENT |
3 |
LCC20,.16SQ,20 |
50 ohm |
105 Cel |
-40 Cel |
44 dB |
1.9 dB |
HIGH LINEARITY AND ISOLATION, I/P POWER-MAX(PEAK)=0.63W |
.3 us |
20 MHz |
6000 MHz |
ABSORPTIVE |
|||||||
|
Qorvo |
SPDT |
SURFACE MOUNT |
6 |
AEC-Q100 |
2 |
1.75 |
.06 mA |
COMPONENT |
1.8 |
50 ohm |
105 Cel |
-40 Cel |
14.5 dB |
1.1 dB |
HIGH ISOLATION, I/P POWER-MAX(PEAK)=2W |
617 MHz |
8000 MHz |
REFLECTIVE |
||||||||||
|
Analog Devices |
DIVERSITY SWITCH |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
CMOS |
1 |
17.99 dBm |
17 dBm |
COMPONENT |
1.65/2.75 |
TSSOP8,.19 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
MATTE TIN |
34 dB |
1.25 dB |
.0066 us |
e3 |
0 MHz |
4000 MHz |
ABSORP/REFLECTIVE |
|||||
Mini-circuits |
SPDT |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
26.99 dBm |
1.94 |
27 dBm |
COMPONENT |
SOP8,.4 |
50 ohm |
RF/Microwave Switches |
100 Cel |
-55 Cel |
Tin/Lead (Sn/Pb) |
25 dB |
2.6 dB |
e0 |
0 MHz |
4600 MHz |
ABSORPTIVE |
|||||||
|
Mini-circuits |
SPDT |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
26.99 dBm |
1.94 |
27 dBm |
COMPONENT |
SOP8,.4 |
50 ohm |
RF/Microwave Switches |
100 Cel |
-55 Cel |
Gold (Au) - with Nickel (Ni) barrier |
25 dB |
2.6 dB |
e4 |
0 MHz |
4600 MHz |
ABSORPTIVE |
||||||
|
Psemi |
SPDT |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
CMOS |
1 |
36 dBm |
1.15 |
.2 mA |
COMPONENT |
3.3/3.4 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
13 dB |
2.7 dB |
HIGH LINEARITY AND ISOLATION |
5.5 us |
e4 |
.009 MHz |
13000 MHz |
ABSORPTIVE |
|||
|
Analog Devices |
DIVERSITY SWITCH |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
CMOS |
1 |
17.99 dBm |
17 dBm |
COMPONENT |
1.65/2.75 |
SOLCC8,.1,20 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
MATTE TIN |
36 dB |
1.25 dB |
.0066 us |
e3 |
0 MHz |
4000 MHz |
ABSORP/REFLECTIVE |
|||||
|
Analog Devices |
SPDT |
SURFACE MOUNT |
20 |
1 |
21 dBm |
1.15 |
.6 mA |
28 dBm |
COMPONENT |
-2.5,3.3/5 |
LGA20,7X7,16 |
50 ohm |
85 Cel |
-40 Cel |
1.1 us |
.009 MHz |
30000 MHz |
ABSORPTIVE |
||||||||||
|
Qorvo |
SPDT |
SURFACE MOUNT |
6 |
AEC-Q100 |
2 |
1.75 |
.06 mA |
COMPONENT |
1.8 |
50 ohm |
105 Cel |
-40 Cel |
14.5 dB |
1.1 dB |
HIGH ISOLATION, I/P POWER-MAX(PEAK)=2W |
617 MHz |
8000 MHz |
REFLECTIVE |
||||||||||
|
Skyworks Solutions |
SP4T |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
29.03 dBm |
1.5 |
26 dBm |
COMPONENT |
5 |
SSOP16,.25 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
22 dB |
1.2 dB |
HIGH ISOLATION |
.125 us |
e3 |
300 MHz |
3500 MHz |
ABSORPTIVE |
|||
|
Analog Devices |
DIVERSITY SWITCH |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
7.5 mA |
23 dBm |
COMPONENT |
5 |
SSOP24,.24 |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
28 dB |
2.1 dB |
.09 us |
e3 |
0 MHz |
2500 MHz |
||||||
|
Analog Devices |
SP4T |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
1 |
25 dBm |
1.13 |
27 dBm |
COMPONENT |
+-3.3 |
LCC24,.12SQ,16 |
50 ohm |
105 Cel |
-40 Cel |
.014 us |
100 MHz |
44000 MHz |
ABSORPTIVE |
||||||||||
|
TE Connectivity |
DPDT |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
GAAS |
1 |
31 dBm |
3 |
LCC12,.12SQ,20 |
RF/Microwave Switches |
85 Cel |
-40 Cel |
25 dB |
1.55 dB |
.09 us |
6000 MHz |
||||||||||||
|
Hittite Microwave |
SPDT |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
30 dBm |
31 dBm |
COMPONENT |
5 |
LCC16,.16SQ,25 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
55 dB |
1.7 dB |
HIGH ISOLATION |
.12 us |
e3 |
0 MHz |
4000 MHz |
ABSORPTIVE |
||||
|
Analog Devices |
DIVERSITY SWITCH |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
CMOS |
1 |
27.5 dBm |
27.5 dBm |
COMPONENT |
+-3.3 |
LCC12,.1SQ,16 |
50 ohm |
105 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
1.7 us |
e4 |
.009 MHz |
44000 MHz |
REFLECTIVE |
||||||||
|
Renesas Electronics |
SPDT |
SURFACE MOUNT |
20 |
2 |
27 dBm |
1.22 |
.17 mA |
COMPONENT |
3.3 |
LCC20,.16SQ,20 |
50 ohm |
110 Cel |
-40 Cel |
TIN |
46 dB |
1.65 dB |
HIGH LINEARITY AND ISOLATION, I/P POWER-MAX(PEAK)=1W |
.155 us |
e3 |
50 MHz |
6000 MHz |
ABSORPTIVE |
||||||
|
Analog Devices |
SP4T |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
17 dBm |
5 mA |
22 dBm |
COMPONENT |
-3/-5 |
LCC24,.16SQ,20 |
50 ohm |
125 Cel |
-55 Cel |
30 dB |
.1 us |
100 MHz |
20000 MHz |
ABSORPTIVE |
||||||||
|
Analog Devices |
SP4T |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
17 dBm |
5 mA |
22 dBm |
COMPONENT |
-3/-5 |
LCC24,.16SQ,20 |
50 ohm |
125 Cel |
-55 Cel |
30 dB |
.1 us |
100 MHz |
20000 MHz |
ABSORPTIVE |
||||||||
|
Qorvo |
SPDT |
SURFACE MOUNT |
32 |
1 |
47 dBm |
COMPONENT |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
.05 us |
500 MHz |
6000 MHz |
REFLECTIVE |
||||||||||||||
|
Analog Devices |
SPDT |
SURFACE MOUNT |
20 |
1 |
21 dBm |
1.15 |
.6 mA |
28 dBm |
COMPONENT |
-2.5,3.3/5 |
LGA20,7X7,16 |
50 ohm |
85 Cel |
-40 Cel |
1.1 us |
.009 MHz |
30000 MHz |
ABSORPTIVE |
||||||||||
|
Analog Devices |
DIVERSITY SWITCH |
SURFACE MOUNT |
24 |
1 |
46.5 dBm |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
105 Cel |
-40 Cel |
MATTE TIN |
TTL COMPATIBLE, HIGH ISOLATION |
.75 us |
e3 |
700 MHz |
3500 MHz |
REFLECTIVE |
||||||||||
|
Analog Devices |
SP3T |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
26.99 dBm |
26 dBm |
COMPONENT |
5 |
SSOP16,.25 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
26 dB |
1 dB |
CMOS/TTL COMPATIBLE |
.15 us |
e3 |
0 MHz |
3500 MHz |
ABSORPTIVE |
||||
|
Analog Devices |
SP8T |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
24 dBm |
5 |
LCC24,.16SQ,20 |
RF/Microwave Switches |
85 Cel |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
30 dB |
1.7 dB |
.1 us |
e4 |
3500 MHz |
ABSORPTIVE |
|||||||||
Analog Devices |
SPDT |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
30 dBm |
23 dBm |
COMPONENT |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
Tin/Lead (Sn85Pb15) |
33 dB |
2.5 dB |
HIGH ISOLATION |
.006 us |
e0 |
0 MHz |
20000 MHz |
||||||||
|
Analog Devices |
SPDT |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
23 dBm |
LCC16,.12SQ,20 |
RF/Microwave Switches |
85 Cel |
-40 Cel |
33 dB |
2.5 dB |
.006 us |
20000 MHz |
||||||||||||||
|
Analog Devices |
DIVERSITY SWITCH |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
39 dBm |
35 dBm |
COMPONENT |
5 |
TSSOP8,.19 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
MATTE TIN |
26 dB |
2 dB |
CMOS COMPATIBLE |
.04 us |
e3 |
0 MHz |
4000 MHz |
RF/microwave switches are electronic components used to selectively route high-frequency signals between input and output ports. These switches are essential building blocks in radio communication systems, test and measurement equipment, and radar systems. RF/microwave switches are designed to operate in a specific frequency range, and their performance is characterized by parameters such as insertion loss, isolation, and switching speed.
There are different types of RF/microwave switches, including electromechanical switches, PIN diode switches, and solid-state switches. Electromechanical switches use mechanical contacts to switch between input and output ports, while PIN diode switches and solid-state switches use electronic control signals to route signals between different ports. PIN diode switches are suitable for lower power applications, while solid-state switches are capable of handling higher power levels.
RF/microwave switches can be classified based on their configuration and functionality. Single-pole single-throw (SPST) switches have a single input and a single output and can switch between two states, while single-pole double-throw (SPDT) switches have a single input and two outputs and can switch between two output ports. Multi-throw switches have more than two output ports and can switch between multiple states. Switches can also be classified as absorptive or reflective, depending on their ability to absorb or reflect the input signal when it is not being routed to the output port.