SURFACE MOUNT RF/Microwave Switches 529

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Compression Point (1 dB)	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	Minimum Isolation	Maximum Insertion Loss	Additional Features	Nominal On Time	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency	Port Termination
HMC232C8	Analog Devices	SPDT	SURFACE MOUNT	8	CERAMIC	GAAS		1	30 dBm			26 dBm	COMPONENT	-5	SOP8,.3	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Gold (Au) - with Nickel (Ni) barrier	37 dB	2.8 dB		.005 us	e4	0 MHz	8000 MHz	ABSORPTIVE
HMC183QS24E	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS		1	29.03 dBm			18 dBm	COMPONENT	-5	SSOP24,.24	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Matte Tin (Sn)	26 dB	1.8 dB		.05 us	e3	0 MHz	2000 MHz	ABSORPTIVE
ADG918BRMZ-500RL7	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	8	PLASTIC/EPOXY	CMOS		1	17.99 dBm			17 dBm	COMPONENT	1.65/2.75	TSSOP8,.19	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	MATTE TIN	34 dB	1.25 dB		.0066 us	e3	0 MHz	4000 MHz	ABSORP/REFLECTIVE
HMC336MS8G	Analog Devices	SPDT	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		1	27.99 dBm			25 dBm	COMPONENT		TSSOP8,.19	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	TIN LEAD	37 dB	2 dB		.02 us	e0	0 MHz	6000 MHz	ABSORPTIVE
ADG919BCP	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	8		CMOS		1	18.06 dBm			20 dBm	COMPONENT	1.8/5	LCC8(UNSPEC)	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Tin/Lead (Sn/Pb)		1.25 dB		.005 us	e0	0 MHz	2000 MHz	ABSORP/REFLECTIVE
ADRF5345BCCZN-R7	Analog Devices	SP4T	SURFACE MOUNT	22				1	42.5 dBm	1.13			COMPONENT	5	LCC22,.16SQ,20	50 ohm		105 Cel	-40 Cel					140 us		1800 MHz	3800 MHz	REFLECTIVE
ADRF5345BCCZN	Analog Devices	SP4T	SURFACE MOUNT	22				1	42.5 dBm	1.13			COMPONENT	5	LCC22,.16SQ,20	50 ohm		105 Cel	-40 Cel					140 us		1800 MHz	3800 MHz	REFLECTIVE
ADRF5345BCCZN-RL	Analog Devices	SP4T	SURFACE MOUNT	22				1	42.5 dBm	1.13			COMPONENT	5	LCC22,.16SQ,20	50 ohm		105 Cel	-40 Cel					140 us		1800 MHz	3800 MHz	REFLECTIVE
HMC8800	Analog Devices	SPDT	SURFACE MOUNT	10			38535V;38534K;883S	1	30 dBm				COMPONENT		DIE OR CHIP	50 ohm		85 Cel	-55 Cel		40 dB	2.9 dB				0 MHz	15000 MHz
SPM3202	Onsemi	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1		1.5		15 dBm			TSSOP6,.08		RF/Microwave Switches	85 Cel	-20 Cel		15 dB	.85 dB		.02 us
SPM3227	Onsemi	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY			1		1.5		15 dBm			SOLCC6,.03,18		RF/Microwave Switches	85 Cel	-40 Cel		16 dB	.6 dB					2500 MHz
SPM3315	Onsemi	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY			1		1.5		29 dBm		2.7	SOLCC6,.03,18		RF/Microwave Switches	85 Cel	-40 Cel		17 dB	.5 dB					2500 MHz
NSVG1001MXT1G	Onsemi	SPDT	SURFACE MOUNT	6			AEC-Q100	1				27 dBm	COMPONENT		SOLCC6,.04,14			105 Cel	-40 Cel		20 dB	.95 dB		.1 us
NSG1001MXT1G	Onsemi	DIVERSITY SWITCH	SURFACE MOUNT	6	PLASTIC/EPOXY			1				27 dBm	COMPONENT		SOLCC6,.04,14			105 Cel	-40 Cel		20 dB	.95 dB				2500 MHz	8000 MHz
SPM3221	Onsemi	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1		1.5		27 dBm		3	FL6,.07,25		RF/Microwave Switches	85 Cel	-40 Cel		27 dB	.4 dB		.05 us			2500 MHz
SPM3225	Onsemi	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1		1.5		31 dBm		1.8/3	TSSOP6,.08		RF/Microwave Switches	85 Cel	-40 Cel		16 dB	.6 dB		.02 us			2500 MHz
SPM3314	Onsemi	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY			1		1.5		29 dBm		2.7	SOLCC6,.03,18		RF/Microwave Switches	85 Cel	-40 Cel		17 dB	.5 dB					2500 MHz
SPM3252	Onsemi	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1		2					TSOP6,.11,37		RF/Microwave Switches	70 Cel	-20 Cel		20 dB	.95 dB		.02 us			1900 MHz
SPM3226	Onsemi	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY			1		1.5					SOLCC6,.03,18		RF/Microwave Switches	85 Cel	-40 Cel		15 dB	.55 dB		.02 us
SPM3501	Onsemi	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY			1		1.7		20 dBm		3	TSSOP6,.08		RF/Microwave Switches	85 Cel	-40 Cel		10 dB	1.3 dB		.1 us			6000 MHz
SPM3205	Onsemi	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1		1.5		15 dBm			TSOP6,.11,37		RF/Microwave Switches	85 Cel	-20 Cel		15 dB	.85 dB		.02 us			1033 MHz
NSG1002MXT1G	Onsemi	SP3T	SURFACE MOUNT	8	PLASTIC/EPOXY			1				30 dBm	COMPONENT	3	SOLCC8,.06,16			105 Cel	-40 Cel		20 dB	.95 dB
SPM3224	Onsemi	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1		1.5				2.8	TSSOP6,.08		RF/Microwave Switches	85 Cel	-40 Cel		15 dB	.55 dB		.02 us			2500 MHz
SPM3215	Onsemi	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY			1		1.6		26 dBm		3	TSSOP6,.08		RF/Microwave Switches	85 Cel	-20 Cel		10 dB	1.4 dB					2500 MHz
NSVG1002MXT1G	Onsemi	SP3T	SURFACE MOUNT	8			AEC-Q100	1				30 dBm	COMPONENT		SOLCC6,.06,16			105 Cel	-40 Cel		20 dB	.95 dB		.1 us		1000 MHz	6000 MHz
SPM3313	Onsemi	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY			1		1.5		30 dBm		2.7	SOLCC6,.03,18		RF/Microwave Switches	85 Cel	-40 Cel		16 dB	.55 dB					2500 MHz
SPM3255	Onsemi	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY			1		2		20 dBm		3	TSOP6,.11,37		RF/Microwave Switches	70 Cel	-20 Cel		20 dB	.9 dB		.02 us			1900 MHz
CSH210R	Infineon Technologies	DIVERSITY SWITCH	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1	34.77 dBm	1.5		30 dBm	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Switches				13 dB	.7 dB		.02 us		0 MHz	3000 MHz
CSY240	Infineon Technologies	DIVERSITY SWITCH	SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS		1	10 dBm			30 dBm	COMPONENT	-5	TSOP5/6,.11,37		RF/Microwave Switches			Tin/Lead (Sn/Pb)					e0	500 MHz	3000 MHz	REFLECTIVE
BGS12PL6	Infineon Technologies	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	CMOS	IEC-61000-4-2	1	36 dBm	1.04	.35 mA		COMPONENT	2.5/3.3	SOLCC6,.03,16	50 ohm		85 Cel	-40 Cel	Gold (Au)	19 dB	1.15 dB	CMOS/TTL COMPATIBLE, HIGH ISOLATION, HIGH LINEARITY	1.4 us	e4	30 MHz	4000 MHz
BGS12WN6E6329	Infineon Technologies	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	CMOS		1	26 dBm	1	.12 mA		COMPONENT	1.8/3.3	LCC6,.03X.04,16	50 ohm		85 Cel	-40 Cel		16 dB	2 dB	CMOS/TTL COMPATIBLE	.22 us		50 MHz	9000 MHz
BGS13AL12	Infineon Technologies	SP3T	SURFACE MOUNT	12	PLASTIC/EPOXY	MOS		1	31.99 dBm	4			COMPONENT	2.8	LCC12,.08SQ,20	50 ohm	RF/Microwave Switches	85 Cel	-30 Cel		20 dB	1.1 dB				100 MHz	3000 MHz
BGS12A	Infineon Technologies	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	CMOS		1	23.98 dBm				COMPONENT	2.8	BGA6,2X3,8	50 ohm	RF/Microwave Switches	85 Cel	-30 Cel	Matte Tin (Sn)	20 dB	.8 dB	CMOS COMPATIBLE		e3	100 MHz	3000 MHz
CSH210	Infineon Technologies	DIVERSITY SWITCH	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1	34.77 dBm	1.5			COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Switches				20 dB	.75 dB				0 MHz	3000 MHz	REFLECTIVE
CSH210P	Infineon Technologies	DIVERSITY SWITCH	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1	36.53 dBm	1.55		34 dBm	COMPONENT	3/5	TSSOP6,.08	50 ohm	RF/Microwave Switches					.75 dB		.02 us		0 MHz	3000 MHz	REFLECTIVE
BGS12P2L6	Infineon Technologies	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	CMOS	IEC-61000-4-2	1	38 dBm	1	.11 mA		COMPONENT	1.8	SOLCC6,.03,16	50 ohm		85 Cel	-40 Cel		24 dB	.74 dB		.7 us		50 MHz	6000 MHz
CSH410	Infineon Technologies	SP4T	SURFACE MOUNT		CERAMIC	GAAS		1	37.78 dBm			38 dBm	COMPONENT	3/5	LCC(UNSPEC)		RF/Microwave Switches			Tin/Lead (Sn/Pb)	21 dB	1 dB		.02 us	e0	1000 MHz	2000 MHz	REFLECTIVE
BGS12WN6E6327	Infineon Technologies	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	CMOS		1	26 dBm	1	.12 mA		COMPONENT	1.8/3.3	LCC6,.03X.04,16	50 ohm		85 Cel	-40 Cel		16 dB	2 dB	CMOS/TTL COMPATIBLE	.22 us		50 MHz	9000 MHz
CSY210	Infineon Technologies	DIVERSITY SWITCH	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		1		1.2	.1 mA		COMPONENT	3	TSOP8,.1,30/24	50 ohm	RF/Microwave Amplifiers			Tin/Lead (Sn/Pb)					e0	500 MHz	2000 MHz
TG2200F	Toshiba	SPDT	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		1	30 dBm			24 dBm	COMPONENT	3	TSSOP8,.16	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel		18 dB	2 dB				1895 MHz	1918 MHz
TG2211FT	Toshiba	DIVERSITY SWITCH	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1	25.44 dBm			22 dBm	COMPONENT	2.7	TSSOP6,.08	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Tin/Lead (Sn/Pb)	14 dB	.85 dB			e0	1000 MHz	2500 MHz
TG2200AF	Toshiba	SPDT	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		1	30 dBm			24 dBm	COMPONENT	3	TSSOP8,.16	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel		20 dB	1 dB		.1 us		1895 MHz	1918 MHz	ABSORPTIVE
TG2211AFT	Toshiba	DIVERSITY SWITCH	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1	25.05 dBm			22 dBm	COMPONENT	2.5	TSSOP6,.08	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel		14 dB	.85 dB				1000 MHz	2500 MHz
TG2217CTB	Toshiba	DIVERSITY SWITCH	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1	23.01 dBm			17 dBm	COMPONENT	2.6	SOLCC6,.04,14	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel		18 dB	.75 dB				1000 MHz	2500 MHz
TG2216TU	Toshiba	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1	30 dBm			28 dBm	COMPONENT	2.7	FL6,.07,25	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel		20 dB	1 dB				1000 MHz	2500 MHz
TG2204F	Toshiba	SPDT	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		1	30 dBm			24 dBm	COMPONENT	3	TSSOP8,.16	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Tin/Lead (Sn/Pb)	20 dB	1 dB		.01 us	e0	1895 MHz	1918 MHz	ABSORPTIVE
TG2205F	Toshiba	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1	30 dBm			24 dBm	COMPONENT	3	TSOP6,.11,37	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Tin/Lead (Sn/Pb)	20 dB	1 dB		.01 us	e0		3000 MHz	ABSORPTIVE
TG2214S	Toshiba	DIVERSITY SWITCH	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1	23.01 dBm			17 dBm	COMPONENT	2.7	FL6,.047,20	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel		18 dB	.75 dB				1000 MHz	2500 MHz

RF/Microwave Switches

RF/microwave switches are electronic components used to selectively route high-frequency signals between input and output ports. These switches are essential building blocks in radio communication systems, test and measurement equipment, and radar systems. RF/microwave switches are designed to operate in a specific frequency range, and their performance is characterized by parameters such as insertion loss, isolation, and switching speed.

There are different types of RF/microwave switches, including electromechanical switches, PIN diode switches, and solid-state switches. Electromechanical switches use mechanical contacts to switch between input and output ports, while PIN diode switches and solid-state switches use electronic control signals to route signals between different ports. PIN diode switches are suitable for lower power applications, while solid-state switches are capable of handling higher power levels.

RF/microwave switches can be classified based on their configuration and functionality. Single-pole single-throw (SPST) switches have a single input and a single output and can switch between two states, while single-pole double-throw (SPDT) switches have a single input and two outputs and can switch between two output ports. Multi-throw switches have more than two output ports and can switch between multiple states. Switches can also be classified as absorptive or reflective, depending on their ability to absorb or reflect the input signal when it is not being routed to the output port.