20 RF/Microwave Switches 27

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Compression Point (1 dB)	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	Minimum Isolation	Maximum Insertion Loss	Additional Features	Nominal On Time	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency	Port Termination
ADRF5020BCCZN	Analog Devices	SPDT	SURFACE MOUNT	20				1	21 dBm		.6 mA	28 dBm	COMPONENT	-2.5,3.3/5	LGA20,7X7,16	50 ohm		85 Cel	-40 Cel					.01 us		100 MHz	30000 MHz	ABSORPTIVE
SKY13290-313LF	Skyworks Solutions	SPDT	SURFACE MOUNT	20	PLASTIC/EPOXY			1	43.5 dBm			15 dBm	COMPONENT	5	LCC20,.16SQ,20	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	MATTE TIN	28 dB	.7 dB	HIGH ISOLATION		e3	500 MHz	2500 MHz
ADRF5020BCCZN-R7	Analog Devices	SPDT	SURFACE MOUNT	20				1	21 dBm		.6 mA	28 dBm	COMPONENT	-2.5,3.3/5	LGA20,7X7,16	50 ohm		85 Cel	-40 Cel					.01 us		100 MHz	30000 MHz	ABSORPTIVE
ADRF5026BCCZN	Analog Devices	SPDT	SURFACE MOUNT	20		CMOS		1	25 dBm	1.15		27 dBm	COMPONENT	+-3.3	LCC20,.12SQ,16	50 ohm		105 Cel	-40 Cel				HIGH ISOLATION	.014 us		100 MHz	44000 MHz	ABSORPTIVE
ADRF5026BCCZN-R7	Analog Devices	SPDT	SURFACE MOUNT	20		CMOS		1	25 dBm	1.15		27 dBm	COMPONENT	+-3.3	LCC20,.12SQ,16	50 ohm		105 Cel	-40 Cel	NICKEL PALLADIUM GOLD			HIGH ISOLATION	.014 us	e4	100 MHz	44000 MHz	ABSORPTIVE
MASW-011060-TR0500	M/a-com Technology Solutions	SPDT	SURFACE MOUNT	20	PLASTIC/EPOXY			1		1.5			COMPONENT	-5,5	LCC20,.16SQ,20			85 Cel	-40 Cel	NICKEL PALLADIUM GOLD SILVER	40 dB	.45 dB		1.5 us	e4	500 MHz	6000 MHz	REFLECTIVE
MASW-011120-TR1000	M/a-com Technology Solutions	SPDT	SURFACE MOUNT	20	PLASTIC/EPOXY			1		1.2			COMPONENT		LCC20,.20SQ,25	50 ohm		120 Cel	-40 Cel		10 dB	.7 dB		.5 us		30 MHz	6000 MHz
ADRF5300BCCZN-R7	Analog Devices	SPDT	SURFACE MOUNT	20				1	28 dBm	1.17			COMPONENT	3.3	LCC20,.12SQ,16	50 ohm		105 Cel	-40 Cel				I/P POWER-MAX(PEAK)=3.98W	.055 us		24000 MHz	32000 MHz	REFLECTIVE
PE42420F-Z	Psemi	SPDT	SURFACE MOUNT	20	PLASTIC/EPOXY	CMOS		1	25 dBm	1.22	.2 mA		COMPONENT	3	LCC20,.16SQ,20	50 ohm		105 Cel	-40 Cel		44 dB	1.9 dB	HIGH LINEARITY AND ISOLATION, I/P POWER-MAX(PEAK)=0.63W	.3 us		20 MHz	6000 MHz	ABSORPTIVE
ADRF5021BCCZN	Analog Devices	SPDT	SURFACE MOUNT	20				1	21 dBm	1.15	.6 mA	28 dBm	COMPONENT	-2.5,3.3/5	LGA20,7X7,16	50 ohm		85 Cel	-40 Cel					1.1 us		.009 MHz	30000 MHz	ABSORPTIVE
F2913NLGK8	Renesas Electronics	SPDT	SURFACE MOUNT	20				2	27 dBm	1.22	.17 mA		COMPONENT	3.3	LCC20,.16SQ,20	50 ohm		110 Cel	-40 Cel	TIN	46 dB	1.65 dB	HIGH LINEARITY AND ISOLATION, I/P POWER-MAX(PEAK)=1W	.155 us	e3	50 MHz	6000 MHz	ABSORPTIVE
ADRF5021BCCZN-R7	Analog Devices	SPDT	SURFACE MOUNT	20				1	21 dBm	1.15	.6 mA	28 dBm	COMPONENT	-2.5,3.3/5	LGA20,7X7,16	50 ohm		85 Cel	-40 Cel					1.1 us		.009 MHz	30000 MHz	ABSORPTIVE
HSWA2-63DR+	Mini-circuits	SPDT	SURFACE MOUNT	20	PLASTIC/EPOXY	CMOS		1	30 dBm	1.22	.2 mA	35 dBm	COMPONENT	3		50 ohm		105 Cel	-40 Cel		44 dB	1.9 dB				100 MHz	6000 MHz	ABSORPTIVE
PE42742MLIBB-Z	Psemi	SPDT	SURFACE MOUNT	20		CMOS	MIL-STD-883	1	24 dBm				COMPONENT	3	LCC20,.16SQ,20	75 ohm		85 Cel	-40 Cel	MATTE TIN	49 dB	1.9 dB	HIGH ISOLATION	3 us	e3	5 MHz	2200 MHz	ABSORPTIVE
4257-52	Psemi	SPDT	SURFACE MOUNT	20	PLASTIC/EPOXY	CMOS		1	32.99 dBm			31 dBm	COMPONENT	3	LCC20,.16SQ,20	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Matte Tin (Sn)	40 dB	1.4 dB	HIGH ISOLATION	2 us	e3	0 MHz	3000 MHz	ABSORPTIVE
ADRF5300	Analog Devices	SPDT	SURFACE MOUNT	20				1	28 dBm	1.17			COMPONENT	3.3	LCC20,.12SQ,16	50 ohm		105 Cel	-40 Cel				I/P POWER-MAX(PEAK)=3.98W	.055 us		24000 MHz	32000 MHz	REFLECTIVE
F2912NCGI	Renesas Electronics	SPDT	SURFACE MOUNT	20	PLASTIC/EPOXY			1		1.09	.153 mA	30 dBm	COMPONENT	3.3	LCC20,.16SQ,20	50 ohm		125 Cel	-55 Cel	TIN	23 dB	1.4 dB		1.1 us	e3	.009 MHz	9000 MHz	ABSORPTIVE
F2912NCGI8	Renesas Electronics	SPDT	SURFACE MOUNT	20	PLASTIC/EPOXY			1		1.09	.153 mA	30 dBm	COMPONENT	3.3	LCC20,.16SQ,20	50 ohm		125 Cel	-55 Cel	MATTE TIN	23 dB	1.4 dB		1.1 us	e3	.009 MHz	9000 MHz	ABSORPTIVE
F2913NLGK	Renesas Electronics	SPDT	SURFACE MOUNT	20				2	27 dBm	1.22	.17 mA		COMPONENT	3.3	LCC20,.16SQ,20	50 ohm		110 Cel	-40 Cel	TIN	46 dB	1.65 dB	HIGH LINEARITY AND ISOLATION, I/P POWER-MAX(PEAK)=1W	.155 us	e3	50 MHz	6000 MHz	ABSORPTIVE
UPD5720K-E3-A	Renesas Electronics	TRANSFER SWITCH	SURFACE MOUNT	20	PLASTIC/EPOXY	CMOS		1						5	LCC20,.16SQ,20		RF/Microwave Switches	85 Cel	-40 Cel		37 dB	9 dB					2150 MHz
F2971NCGK	Renesas Electronics	SPDT	SURFACE MOUNT	20				1	26 dBm	1.07	.03 mA	31 dBm	COMPONENT	3		75 ohm		105 Cel	-40 Cel	Tin (Sn)	56 dB	.51 dB	HIGH ISOLATION	2.6 us	e3	5 MHz	3000 MHz	ABSORPTIVE
F2971NCGK8	Renesas Electronics	SPDT	SURFACE MOUNT	20				1	26 dBm	1.07	.03 mA	31 dBm	COMPONENT	3		75 ohm		105 Cel	-40 Cel	Tin (Sn)	56 dB	.51 dB	HIGH ISOLATION	2.6 us	e3	5 MHz	3000 MHz	ABSORPTIVE
UPG2053K-E3	Renesas Electronics	SPDT	SURFACE MOUNT	20	PLASTIC/EPOXY	GAAS		1	10 dBm				COMPONENT	5	LCC20,.16SQ,20	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Tin/Lead (Sn/Pb)	35 dB	8 dB			e0	950 MHz	2150 MHz
UPG2193T6E-E2-A	Renesas Electronics	DIVERSITY SWITCH	SURFACE MOUNT	20	PLASTIC/EPOXY	GAAS		1	36 dBm	4			COMPONENT	2.7	LCC20,.14SQ,20	50 ohm	RF/Microwave Switches	85 Cel	-30 Cel	Tin/Bismuth (Sn/Bi)		.6 dB	HIGH ISOLATION, IT ALSO OPERATES AT 824-960 MHZ, 1710-1910 MHZ, 1805-1990 MHZ AND 1920-2170 MHZ		e6	824 MHz	915 MHz
UPG2053K-E3-A	Renesas Electronics	SPDT	SURFACE MOUNT	20	PLASTIC/EPOXY	GAAS		1	10 dBm				COMPONENT	5	LCC20,.16SQ,20	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Tin/Bismuth (Sn/Bi)	35 dB	8 dB			e6	950 MHz	2150 MHz
UPG2181T5R-E2-A	Renesas Electronics	DIVERSITY SWITCH	SURFACE MOUNT	20	PLASTIC/EPOXY	GAAS		1	46.13 dBm				COMPONENT	3	LCC20,.1X.14,20	50 ohm	RF/Microwave Switches	85 Cel	-45 Cel	Tin/Bismuth (Sn/Bi)	18 dB	1.3 dB			e6	2300 MHz	3800 MHz
UPG2054K-E3-A	Renesas Electronics	SPDT	SURFACE MOUNT	20	PLASTIC/EPOXY	GAAS		1	10 dBm				COMPONENT	5	LCC20,.16SQ,20	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Tin/Bismuth (Sn/Bi)	35 dB	8 dB			e6	950 MHz	2150 MHz

RF/Microwave Switches

RF/microwave switches are electronic components used to selectively route high-frequency signals between input and output ports. These switches are essential building blocks in radio communication systems, test and measurement equipment, and radar systems. RF/microwave switches are designed to operate in a specific frequency range, and their performance is characterized by parameters such as insertion loss, isolation, and switching speed.

There are different types of RF/microwave switches, including electromechanical switches, PIN diode switches, and solid-state switches. Electromechanical switches use mechanical contacts to switch between input and output ports, while PIN diode switches and solid-state switches use electronic control signals to route signals between different ports. PIN diode switches are suitable for lower power applications, while solid-state switches are capable of handling higher power levels.

RF/microwave switches can be classified based on their configuration and functionality. Single-pole single-throw (SPST) switches have a single input and a single output and can switch between two states, while single-pole double-throw (SPDT) switches have a single input and two outputs and can switch between two output ports. Multi-throw switches have more than two output ports and can switch between multiple states. Switches can also be classified as absorptive or reflective, depending on their ability to absorb or reflect the input signal when it is not being routed to the output port.