8 RF/Microwave Switches 134

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Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level No. of Functions Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Compression Point (1 dB) Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Minimum Operating Temperature Terminal Finish Minimum Isolation Maximum Insertion Loss Additional Features Nominal On Time JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency Port Termination

HMC174MS8RTR

Analog Devices

TRANSFER SWITCH

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

36 dBm

5

TSSOP8,.19

RF/Microwave Switches

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

15 dB

1.8 dB

.024 us

e0

3000 MHz

REFLECTIVE

HMC174MS8

Analog Devices

DIVERSITY SWITCH

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

36 dBm

COMPONENT

5

TSSOP8,.19

50 ohm

RF/Microwave Switches

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

15 dB

1.8 dB

CMOS/TTL COMPATIBLE

.024 us

e0

0 MHz

3000 MHz

REFLECTIVE

ADG919BCP-500RL7

Analog Devices

DIVERSITY SWITCH

SURFACE MOUNT

8

PLASTIC/EPOXY

CMOS

1

17.99 dBm

17 dBm

COMPONENT

1.65/2.75

SOLCC8,.1,20

50 ohm

RF/Microwave Switches

85 Cel

-40 Cel

Tin/Lead (Sn85Pb15)

36 dB

1.25 dB

.0066 us

e0

0 MHz

4000 MHz

ABSORP/REFLECTIVE

ADG919BRM-500RL7

Analog Devices

DIVERSITY SWITCH

SURFACE MOUNT

8

PLASTIC/EPOXY

CMOS

1

17.99 dBm

17 dBm

COMPONENT

1.65/2.75

TSSOP8,.19

50 ohm

RF/Microwave Switches

85 Cel

-40 Cel

Tin/Lead (Sn85Pb15)

34 dB

1.25 dB

.0066 us

e0

0 MHz

4000 MHz

ABSORP/REFLECTIVE

HMC239AS8

Analog Devices

DIVERSITY SWITCH

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

27 dBm

27 dBm

COMPONENT

SOP8,.25

50 ohm

85 Cel

-40 Cel

14 dB

1 dB

.01 us

0 MHz

2500 MHz

REFLECTIVE

ADG919BCP-REEL7

Analog Devices

DIVERSITY SWITCH

SURFACE MOUNT

8

PLASTIC/EPOXY

CMOS

1

17.99 dBm

17 dBm

COMPONENT

1.65/2.75

SOLCC8,.1,20

50 ohm

RF/Microwave Switches

85 Cel

-40 Cel

Tin/Lead (Sn85Pb15)

36 dB

1.25 dB

.0066 us

e0

0 MHz

4000 MHz

ABSORP/REFLECTIVE

HMC174MS8ETR

Analog Devices

SPDT

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

36 dBm

5

TSSOP8,.19

RF/Microwave Switches

85 Cel

-40 Cel

Matte Tin (Sn)

15 dB

1.8 dB

.024 us

e3

3000 MHz

REFLECTIVE

HMC232G8

Analog Devices

SPDT

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

30 dBm

27 dBm

COMPONENT

5

SOP8,.4

50 ohm

RF/Microwave Switches

85 Cel

-40 Cel

Gold (Au) - with Nickel (Ni) barrier

29 dB

2.2 dB

.006 us

e4

0 MHz

6000 MHz

ABSORPTIVE

ADG919BRMZ-REEL7

Analog Devices

DIVERSITY SWITCH

SURFACE MOUNT

8

PLASTIC/EPOXY

CMOS

1

17.99 dBm

17 dBm

COMPONENT

1.65/2.75

TSSOP8,.19

50 ohm

RF/Microwave Switches

85 Cel

-40 Cel

MATTE TIN

34 dB

1.25 dB

.0066 us

e3

0 MHz

4000 MHz

ABSORP/REFLECTIVE

HMC174MS8TR

Analog Devices

TRANSFER SWITCH

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

36 dBm

5

TSSOP8,.19

RF/Microwave Switches

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

15 dB

1.8 dB

.024 us

e0

3000 MHz

REFLECTIVE

HMC232C8

Analog Devices

SPDT

SURFACE MOUNT

8

CERAMIC

GAAS

1

30 dBm

26 dBm

COMPONENT

-5

SOP8,.3

50 ohm

RF/Microwave Switches

85 Cel

-40 Cel

Gold (Au) - with Nickel (Ni) barrier

37 dB

2.8 dB

.005 us

e4

0 MHz

8000 MHz

ABSORPTIVE

ADG918BRMZ-500RL7

Analog Devices

DIVERSITY SWITCH

SURFACE MOUNT

8

PLASTIC/EPOXY

CMOS

1

17.99 dBm

17 dBm

COMPONENT

1.65/2.75

TSSOP8,.19

50 ohm

RF/Microwave Switches

85 Cel

-40 Cel

MATTE TIN

34 dB

1.25 dB

.0066 us

e3

0 MHz

4000 MHz

ABSORP/REFLECTIVE

HMC336MS8G

Analog Devices

SPDT

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

27.99 dBm

25 dBm

COMPONENT

TSSOP8,.19

50 ohm

RF/Microwave Switches

85 Cel

-40 Cel

TIN LEAD

37 dB

2 dB

.02 us

e0

0 MHz

6000 MHz

ABSORPTIVE

ADG919BCP

Analog Devices

DIVERSITY SWITCH

SURFACE MOUNT

8

CMOS

1

18.06 dBm

20 dBm

COMPONENT

1.8/5

LCC8(UNSPEC)

50 ohm

RF/Microwave Switches

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

1.25 dB

.005 us

e0

0 MHz

2000 MHz

ABSORP/REFLECTIVE

NSG1002MXT1G

Onsemi

SP3T

SURFACE MOUNT

8

PLASTIC/EPOXY

1

30 dBm

COMPONENT

3

SOLCC8,.06,16

105 Cel

-40 Cel

20 dB

.95 dB

NSVG1002MXT1G

Onsemi

SP3T

SURFACE MOUNT

8

AEC-Q100

1

30 dBm

COMPONENT

SOLCC6,.06,16

105 Cel

-40 Cel

20 dB

.95 dB

.1 us

1000 MHz

6000 MHz

CSY210

Infineon Technologies

DIVERSITY SWITCH

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

1.2

.1 mA

COMPONENT

3

TSOP8,.1,30/24

50 ohm

RF/Microwave Amplifiers

Tin/Lead (Sn/Pb)

e0

500 MHz

2000 MHz

TG2200F

Toshiba

SPDT

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

30 dBm

24 dBm

COMPONENT

3

TSSOP8,.16

50 ohm

RF/Microwave Switches

85 Cel

-40 Cel

18 dB

2 dB

1895 MHz

1918 MHz

TG2200AF

Toshiba

SPDT

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

30 dBm

24 dBm

COMPONENT

3

TSSOP8,.16

50 ohm

RF/Microwave Switches

85 Cel

-40 Cel

20 dB

1 dB

.1 us

1895 MHz

1918 MHz

ABSORPTIVE

TG2204F

Toshiba

SPDT

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

30 dBm

24 dBm

COMPONENT

3

TSSOP8,.16

50 ohm

RF/Microwave Switches

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

20 dB

1 dB

.01 us

e0

1895 MHz

1918 MHz

ABSORPTIVE

UPG132G-E1

Renesas Electronics

SPDT

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

30 dBm

3/5

SSOP8,.2

RF/Microwave Switches

Tin/Lead (Sn/Pb)

1 dB

.03 us

e0

2500 MHz

REFLECTIVE

F2911NBGP8

Renesas Electronics

SPST

SURFACE MOUNT

8

1

21 dBm

1.05

.304 mA

COMPONENT

3.3

SOLCC8,.08,20

75 ohm

105 Cel

-40 Cel

Tin (Sn)

75 dB

.55 dB

HIGH RELIABILITY, HIGH ISOLATION AND I/P POWER-MAX(PEAK)=24 DBM

1 us

e3

1 MHz

3500 MHz

REFLECTIVE

UPG107B

Renesas Electronics

SPDT

SURFACE MOUNT

8

CERAMIC

GAAS

1

-5

FL8,.2

RF/Microwave Switches

Tin/Lead (Sn/Pb)

e0

UPG139GV-E1

Renesas Electronics

DPDT

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

27 dBm

3

SSOP8,.19

RF/Microwave Switches

80 Cel

-50 Cel

Tin/Lead (Sn/Pb)

10.5 dB

1.4 dB

e0

2000 MHz

F2910NBGP8

Renesas Electronics

SPST

SURFACE MOUNT

8

1

23 dBm

3.3

.374 mA

34 dBm

COMPONENT

3.3

SOLCC8,.08,20

50 ohm

105 Cel

-55 Cel

TIN

30 dB

1 dB

HIGH LINEARITY AND ISOLATION, HIGH RELIABILITY

265 us

e3

30 MHz

8000 MHz

ABSORPTIVE

UPG138GV

Renesas Electronics

SPDT

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

34 dBm

-3

SSOP8,.2

RF/Microwave Switches

80 Cel

-50 Cel

Tin/Lead (Sn/Pb)

18 dB

.9 dB

.01 us

e0

2000 MHz

REFLECTIVE

UPG139GV

Renesas Electronics

DPDT

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

30 dBm

3/5

SSOP8,.19

RF/Microwave Switches

80 Cel

-50 Cel

Tin/Lead (Sn/Pb)

10.5 dB

1.4 dB

.06 us

e0

REFLECTIVE

F2911NBGP

Renesas Electronics

SPST

SURFACE MOUNT

8

1

21 dBm

1.05

.304 mA

COMPONENT

3.3

SOLCC8,.08,20

75 ohm

105 Cel

-40 Cel

Tin (Sn)

75 dB

.55 dB

HIGH RELIABILITY, HIGH ISOLATION AND I/P POWER-MAX(PEAK)=24 DBM

1 us

e3

1 MHz

3500 MHz

REFLECTIVE

UPG138GV-E1

Renesas Electronics

DIVERSITY SWITCH

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

34 dBm

-3/-5

SSOP8,.19

RF/Microwave Switches

80 Cel

-50 Cel

Tin/Lead (Sn/Pb)

18 dB

.9 dB

.01 us

e0

REFLECTIVE

UPG130GR

Renesas Electronics

SPDT

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

34 dBm

-5

SOP8,.25

RF/Microwave Switches

90 Cel

-65 Cel

Tin/Lead (Sn/Pb)

25 dB

.8 dB

.01 us

e0

2000 MHz

REFLECTIVE

UPG131GR

Renesas Electronics

SPDT

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

30 dBm

-4

SOP8,.25

RF/Microwave Switches

90 Cel

-65 Cel

Tin/Lead (Sn/Pb)

20 dB

1 dB

.01 us

e0

2000 MHz

REFLECTIVE

UPG137GV

Renesas Electronics

SPDT

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

34 dBm

3

SSOP8,.2

RF/Microwave Switches

80 Cel

-50 Cel

Tin/Lead (Sn/Pb)

20 dB

.9 dB

.03 us

e0

2000 MHz

REFLECTIVE

F2910NBGP

Renesas Electronics

SPST

SURFACE MOUNT

8

1

23 dBm

3.3

.374 mA

34 dBm

COMPONENT

3.3

SOLCC8,.08,20

50 ohm

105 Cel

-55 Cel

TIN

30 dB

1 dB

HIGH LINEARITY AND ISOLATION, HIGH RELIABILITY

265 us

e3

30 MHz

8000 MHz

ABSORPTIVE

UPG137GV-E1

Renesas Electronics

SPDT

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

34 dBm

3/5

SSOP8,.19

RF/Microwave Switches

80 Cel

-50 Cel

Tin/Lead (Sn/Pb)

20 dB

.9 dB

.03 us

e0

REFLECTIVE

UPG133G-E1

Renesas Electronics

SPDT

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

25 dBm

-3

SSOP8,.2

RF/Microwave Switches

Tin/Lead (Sn/Pb)

20 dB

1 dB

.01 us

e0

2500 MHz

UPG132G

Renesas Electronics

SPDT

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

30 dBm

3

SSOP8,.2

RF/Microwave Switches

90 Cel

-65 Cel

Tin/Lead (Sn/Pb)

20 dB

1 dB

.03 us

e0

2500 MHz

REFLECTIVE

UPG2413T6Z-E2-A

Renesas Electronics

DIVERSITY SWITCH

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

34 dBm

27 dBm

COMPONENT

3

SOLCC8,.06,16

50 ohm

RF/Microwave Switches

85 Cel

-45 Cel

15 dB

.75 dB

HIGH ISOLATION

.05 us

500 MHz

3000 MHz

SMP-11003

Samsung

SPDT

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

1.9

23 dBm

-3

SOP8,.25

RF/Microwave Switches

85 Cel

-55 Cel

Tin/Lead (Sn/Pb)

15 dB

1.8 dB

.015 us

e0

3000 MHz

REFLECTIVE

RF/Microwave Switches

RF/microwave switches are electronic components used to selectively route high-frequency signals between input and output ports. These switches are essential building blocks in radio communication systems, test and measurement equipment, and radar systems. RF/microwave switches are designed to operate in a specific frequency range, and their performance is characterized by parameters such as insertion loss, isolation, and switching speed.

There are different types of RF/microwave switches, including electromechanical switches, PIN diode switches, and solid-state switches. Electromechanical switches use mechanical contacts to switch between input and output ports, while PIN diode switches and solid-state switches use electronic control signals to route signals between different ports. PIN diode switches are suitable for lower power applications, while solid-state switches are capable of handling higher power levels.

RF/microwave switches can be classified based on their configuration and functionality. Single-pole single-throw (SPST) switches have a single input and a single output and can switch between two states, while single-pole double-throw (SPDT) switches have a single input and two outputs and can switch between two output ports. Multi-throw switches have more than two output ports and can switch between multiple states. Switches can also be classified as absorptive or reflective, depending on their ability to absorb or reflect the input signal when it is not being routed to the output port.