CERAMIC RF/Microwave Switches 18

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Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level No. of Functions Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Compression Point (1 dB) Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Minimum Operating Temperature Terminal Finish Minimum Isolation Maximum Insertion Loss Additional Features Nominal On Time JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency Port Termination

TGS2352-2-SM

Qorvo

SPDT

SURFACE MOUNT

22

CERAMIC

GAN

1

44 dBm

1.43

COMPONENT

-40/GND

50 ohm

85 Cel

-40 Cel

.031 us

500 MHz

12000 MHz

REFLECTIVE

HMC244AG16TR

Analog Devices

SP4T

SURFACE MOUNT

16

CERAMIC

GAAS

1

28 dBm

3/5

QFP16,.45SQ,30

RF/Microwave Switches

85 Cel

-40 Cel

24 dB

1.8 dB

.15 us

4000 MHz

ABSORPTIVE

HMC253LC4TR

Analog Devices

SP8T

SURFACE MOUNT

24

CERAMIC

GAAS

1

24 dBm

5

LCC24,.16SQ,20

RF/Microwave Switches

85 Cel

-40 Cel

Gold (Au) - with Nickel (Ni) barrier

30 dB

1.7 dB

.1 us

e4

3500 MHz

ABSORPTIVE

HMC1084LC4TR

Analog Devices

DIVERSITY SWITCH

SURFACE MOUNT

24

CERAMIC

GAAS

1

-3

LCC24,.16SQ,20

RF/Microwave Switches

85 Cel

-55 Cel

GOLD OVER NICKEL

21 dB

4.5 dB

.053 us

e4

30000 MHz

REFLECTIVE

TGS2353-2-SM

Qorvo

SPDT

SURFACE MOUNT

22

CERAMIC

1

41 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

GOLD OVER NICKEL

.031 us

e4

500 MHz

18000 MHz

REFLECTIVE

HMC547LC3TR

Analog Devices

SPDT

SURFACE MOUNT

16

CERAMIC

GAAS

1

16 dBm

LCC16,.12SQ,20

RF/Microwave Switches

85 Cel

-40 Cel

30 dB

3 dB

.006 us

28000 MHz

ABSORPTIVE

HMC944LC4TR

Analog Devices

SP4T

SURFACE MOUNT

24

CERAMIC

GAAS

1

LCC24,.16SQ,20

RF/Microwave Switches

85 Cel

-40 Cel

30 dB

5 dB

.053 us

30000 MHz

REFLECTIVE

HMC344LH5

Analog Devices

SP4T

SURFACE MOUNT

12

CERAMIC

GAAS

1

28.06 dBm

27 dBm

COMPONENT

-5

LCC12,.2SQ

50 ohm

RF/Microwave Switches

85 Cel

-40 Cel

Gold (Au) - with Nickel (Ni) barrier

30 dB

3.4 dB

.075 us

e4

0 MHz

12000 MHz

ABSORPTIVE

HMC344LC3RTR

Analog Devices

SP4T

SURFACE MOUNT

16

CERAMIC

GAAS

1

-5

LCC16,.12SQ,20

RF/Microwave Switches

85 Cel

-40 Cel

30 dB

3 dB

.07 us

8000 MHz

ABSORPTIVE

HMC253LC4

Analog Devices

SP8T

SURFACE MOUNT

24

CERAMIC

GAAS

1

24 dBm

COMPONENT

5

LCC24,.16SQ,20

50 ohm

RF/Microwave Switches

85 Cel

-40 Cel

Gold (Au) - with Nickel (Ni) barrier

30 dB

1.7 dB

CMOS/TTL COMPATIBLE

.1 us

e4

0 MHz

3500 MHz

ABSORPTIVE

HMC641LC4TR

Analog Devices

SP4T

SURFACE MOUNT

24

CERAMIC

GAAS

1

23 dBm

-5

LCC24,.16SQ,20

RF/Microwave Switches

85 Cel

-40 Cel

30 dB

3.5 dB

.088 us

20000 MHz

ABSORPTIVE

HMC641LC4

Analog Devices

SP4T

SURFACE MOUNT

24

CERAMIC

GAAS

1

23.98 dBm

23 dBm

COAXIAL

-5

LCC24,.16SQ,20

50 ohm

RF/Microwave Switches

85 Cel

-40 Cel

Gold (Au) - with Nickel (Ni) barrier

30 dB

3.5 dB

HIGH ISOLATION

.088 us

e4

0 MHz

20000 MHz

ABSORPTIVE

HMC232C8TR

Analog Devices

SPDT

SURFACE MOUNT

8

CERAMIC

GAAS

1

30 dBm

26 dBm

COMPONENT

SOP8,.3

50 ohm

85 Cel

-40 Cel

37 dB

2.8 dB

.005 us

0 MHz

8000 MHz

ABSORPTIVE

HMC1084LC4

Analog Devices

SP4T

SURFACE MOUNT

24

CERAMIC

GAAS

1

30 dBm

.01 mA

COMPONENT

-3

LCC24,.16SQ,20

50 ohm

85 Cel

-55 Cel

GOLD OVER NICKEL

21 dB

4.5 dB

.053 us

e4

23000 MHz

30000 MHz

REFLECTIVE

HMC347C8

Analog Devices

SPDT

SURFACE MOUNT

8

CERAMIC

GAAS

1

26.99 dBm

23 dBm

COMPONENT

SOP8,.3

50 ohm

RF/Microwave Switches

85 Cel

-55 Cel

Gold (Au) - with Nickel (Ni) barrier

32 dB

2.8 dB

.006 us

e4

0 MHz

8000 MHz

ABSORPTIVE

HMC232C8

Analog Devices

SPDT

SURFACE MOUNT

8

CERAMIC

GAAS

1

30 dBm

26 dBm

COMPONENT

-5

SOP8,.3

50 ohm

RF/Microwave Switches

85 Cel

-40 Cel

Gold (Au) - with Nickel (Ni) barrier

37 dB

2.8 dB

.005 us

e4

0 MHz

8000 MHz

ABSORPTIVE

CSH410

Infineon Technologies

SP4T

SURFACE MOUNT

CERAMIC

GAAS

1

37.78 dBm

38 dBm

COMPONENT

3/5

LCC(UNSPEC)

RF/Microwave Switches

Tin/Lead (Sn/Pb)

21 dB

1 dB

.02 us

e0

1000 MHz

2000 MHz

REFLECTIVE

UPG107B

Renesas Electronics

SPDT

SURFACE MOUNT

8

CERAMIC

GAAS

1

-5

FL8,.2

RF/Microwave Switches

Tin/Lead (Sn/Pb)

e0

RF/Microwave Switches

RF/microwave switches are electronic components used to selectively route high-frequency signals between input and output ports. These switches are essential building blocks in radio communication systems, test and measurement equipment, and radar systems. RF/microwave switches are designed to operate in a specific frequency range, and their performance is characterized by parameters such as insertion loss, isolation, and switching speed.

There are different types of RF/microwave switches, including electromechanical switches, PIN diode switches, and solid-state switches. Electromechanical switches use mechanical contacts to switch between input and output ports, while PIN diode switches and solid-state switches use electronic control signals to route signals between different ports. PIN diode switches are suitable for lower power applications, while solid-state switches are capable of handling higher power levels.

RF/microwave switches can be classified based on their configuration and functionality. Single-pole single-throw (SPST) switches have a single input and a single output and can switch between two states, while single-pole double-throw (SPDT) switches have a single input and two outputs and can switch between two output ports. Multi-throw switches have more than two output ports and can switch between multiple states. Switches can also be classified as absorptive or reflective, depending on their ability to absorb or reflect the input signal when it is not being routed to the output port.