Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Compression Point (1 dB) | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Minimum Operating Temperature | Terminal Finish | Minimum Isolation | Maximum Insertion Loss | Additional Features | Nominal On Time | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency | Port Termination |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Analog Devices |
SP4T |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
26.99 dBm |
25 dBm |
COMPONENT |
5 |
QFP16,.45SQ,30 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
24 dB |
1.8 dB |
CMOS/TTL COMPATIBLE |
.15 us |
e4 |
0 MHz |
4000 MHz |
ABSORPTIVE |
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|
Analog Devices |
SP4T |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
23.98 dBm |
23 dBm |
COAXIAL |
-5 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
30 dB |
3.5 dB |
HIGH ISOLATION |
.088 us |
e4 |
0 MHz |
20000 MHz |
ABSORPTIVE |
||||
|
Analog Devices |
SP4T |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
3 dB |
CMOS/TTL COMPATIBLE |
e4 |
0 MHz |
8000 MHz |
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Analog Devices |
SP4T |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
23.98 dBm |
21 dBm |
COMPONENT |
-5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
31 dB |
2.5 dB |
HIGH ISOLATION |
.15 us |
e0 |
0 MHz |
8000 MHz |
||||||
|
Analog Devices |
SP4T |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
23.98 dBm |
15 dBm |
COMPONENT |
-5 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
30 dB |
4.2 dB |
HIGH ISOLATION |
.088 us |
e3 |
0 MHz |
20000 MHz |
ABSORPTIVE |
||||
|
Analog Devices |
SP4T |
19.03 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
2.5 dB |
HIGH ISOLATION |
e3 |
100 MHz |
8000 MHz |
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|
Analog Devices |
SP4T |
SURFACE MOUNT |
16 |
GAAS |
1 |
19 dBm |
6 mA |
25 dBm |
COMPONENT |
-3/-5 |
LCC16,.12SQ,20 |
50 ohm |
125 Cel |
-55 Cel |
28 dB |
2.5 dB |
.075 us |
100 MHz |
8000 MHz |
ABSORPTIVE |
||||||||
|
Analog Devices |
SP4T |
SURFACE MOUNT |
16 |
GAAS |
1 |
19 dBm |
6 mA |
25 dBm |
COMPONENT |
-3/-5 |
LCC16,.12SQ,20 |
50 ohm |
125 Cel |
-55 Cel |
28 dB |
2.5 dB |
.075 us |
100 MHz |
8000 MHz |
ABSORPTIVE |
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|
Analog Devices |
SP4T |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
23.98 dBm |
21 dBm |
COMPONENT |
-5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
31 dB |
2.5 dB |
HIGH ISOLATION |
.15 us |
e3 |
0 MHz |
8000 MHz |
|||||
Analog Devices |
SP4T |
Tin/Lead (Sn/Pb) |
e0 |
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|
Analog Devices |
SP4T |
26.99 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
1.5 dB |
e3 |
0 MHz |
4000 MHz |
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Analog Devices |
SP4T |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
23.98 dBm |
21 dBm |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
TIN LEAD |
27 dB |
2.9 dB |
HIGH ISOLATION |
.12 us |
e0 |
0 MHz |
8000 MHz |
ABSORPTIVE |
|||||
Analog Devices |
SP4T |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
26.99 dBm |
25 dBm |
COMPONENT |
5 |
SSOP16,.25 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
23 dB |
1.5 dB |
CMOS/TTL COMPATIBLE |
.15 us |
e0 |
0 MHz |
3500 MHz |
||||||
|
Analog Devices |
SP4T |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
30 dBm |
.01 mA |
COMPONENT |
-3 |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
-55 Cel |
GOLD OVER NICKEL |
21 dB |
4.5 dB |
.053 us |
e4 |
23000 MHz |
30000 MHz |
REFLECTIVE |
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|
Analog Devices |
SP4T |
GAAS |
1 |
23.98 dBm |
24 dBm |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Switches |
85 Cel |
-55 Cel |
Gold (Au) |
37 dB |
3.1 dB |
HIGH ISOLATION |
.095 us |
e4 |
0 MHz |
18000 MHz |
ABSORPTIVE |
|||||||
|
Analog Devices |
SP4T |
26.99 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
1.5 dB |
e3 |
0 MHz |
4000 MHz |
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|
Analog Devices |
SP4T |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
-5 |
LCC16,.12SQ,20 |
RF/Microwave Switches |
85 Cel |
-40 Cel |
30 dB |
3 dB |
.15 us |
8000 MHz |
ABSORPTIVE |
||||||||||||
Analog Devices |
SP4T |
26.99 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
TIN LEAD |
1.5 dB |
e0 |
0 MHz |
4000 MHz |
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|
Analog Devices |
SP4T |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
1 |
25 dBm |
1.15 |
27 dBm |
COMPONENT |
+-3.3 |
LCC24,.12SQ,16 |
50 ohm |
105 Cel |
-40 Cel |
2.8 us |
.009 MHz |
44000 MHz |
ABSORPTIVE |
||||||||||
Analog Devices |
SP4T |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
23.98 dBm |
21 dBm |
COMPONENT |
-5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
31 dB |
2.5 dB |
HIGH ISOLATION |
.15 us |
e0 |
0 MHz |
8000 MHz |
||||||
|
Analog Devices |
SP4T |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
23.98 dBm |
21 dBm |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
MATTE TIN |
27 dB |
2.9 dB |
HIGH ISOLATION |
.12 us |
e3 |
0 MHz |
8000 MHz |
ABSORPTIVE |
||||
|
Analog Devices |
SP4T |
SURFACE MOUNT |
22 |
1 |
42.5 dBm |
1.13 |
COMPONENT |
5 |
LCC22,.16SQ,20 |
50 ohm |
105 Cel |
-40 Cel |
140 us |
1800 MHz |
3800 MHz |
REFLECTIVE |
||||||||||||
|
Analog Devices |
SP4T |
SURFACE MOUNT |
22 |
1 |
42.5 dBm |
1.13 |
COMPONENT |
5 |
LCC22,.16SQ,20 |
50 ohm |
105 Cel |
-40 Cel |
140 us |
1800 MHz |
3800 MHz |
REFLECTIVE |
||||||||||||
|
Analog Devices |
SP4T |
SURFACE MOUNT |
22 |
1 |
42.5 dBm |
1.13 |
COMPONENT |
5 |
LCC22,.16SQ,20 |
50 ohm |
105 Cel |
-40 Cel |
140 us |
1800 MHz |
3800 MHz |
REFLECTIVE |
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Analog Devices |
SP4T |
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Analog Devices |
SP4T |
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|
Analog Devices |
SP4T |
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|
Analog Devices |
SP4T |
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|
Infineon Technologies |
SP4T |
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|
Infineon Technologies |
SP4T |
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|
Infineon Technologies |
SP4T |
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|
Infineon Technologies |
SP4T |
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|
Infineon Technologies |
SP4T |
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|
Infineon Technologies |
SP4T |
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Infineon Technologies |
SP4T |
SURFACE MOUNT |
CERAMIC |
GAAS |
1 |
37.78 dBm |
38 dBm |
COMPONENT |
3/5 |
LCC(UNSPEC) |
RF/Microwave Switches |
Tin/Lead (Sn/Pb) |
21 dB |
1 dB |
.02 us |
e0 |
1000 MHz |
2000 MHz |
REFLECTIVE |
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|
Renesas Electronics |
SP4T |
Matte Tin (Sn) |
e3 |
|||||||||||||||||||||||||
Renesas Electronics |
SP4T |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
10 dB |
4 INPUT 2 OUTPUT SWITCH |
e0 |
950 MHz |
2150 MHz |
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|
Renesas Electronics |
SP4T |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
10 dB |
e0 |
950 MHz |
1500 MHz |
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Renesas Electronics |
SP4T |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
2 |
5 |
FL16,.2,25 |
RF/Microwave Switches |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
22 dB |
10 dB |
e0 |
2150 MHz |
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|
Renesas Electronics |
SP4T |
TIN |
e3 |
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|
Renesas Electronics |
SP4T |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
37.99 dBm |
COMPONENT |
2.65 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-45 Cel |
Tin/Bismuth (Sn/Bi) |
15 dB |
.95 dB |
HIGH ISOLATION |
e6 |
500 MHz |
2500 MHz |
|||||||
|
Broadcom |
SP4T |
SURFACE MOUNT |
14 |
PLASTIC/EPOXY |
GAAS |
1 |
2.7/5 |
LCC14,.12X.16,28 |
RF/Microwave Switches |
85 Cel |
-20 Cel |
22 dB |
4000 MHz |
RF/microwave switches are electronic components used to selectively route high-frequency signals between input and output ports. These switches are essential building blocks in radio communication systems, test and measurement equipment, and radar systems. RF/microwave switches are designed to operate in a specific frequency range, and their performance is characterized by parameters such as insertion loss, isolation, and switching speed.
There are different types of RF/microwave switches, including electromechanical switches, PIN diode switches, and solid-state switches. Electromechanical switches use mechanical contacts to switch between input and output ports, while PIN diode switches and solid-state switches use electronic control signals to route signals between different ports. PIN diode switches are suitable for lower power applications, while solid-state switches are capable of handling higher power levels.
RF/microwave switches can be classified based on their configuration and functionality. Single-pole single-throw (SPST) switches have a single input and a single output and can switch between two states, while single-pole double-throw (SPDT) switches have a single input and two outputs and can switch between two output ports. Multi-throw switches have more than two output ports and can switch between multiple states. Switches can also be classified as absorptive or reflective, depending on their ability to absorb or reflect the input signal when it is not being routed to the output port.