SP8T RF/Microwave Switches 20

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Compression Point (1 dB)	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	Minimum Isolation	Maximum Insertion Loss	Additional Features	Nominal On Time	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency	Port Termination
PE42482A-X	Psemi	SP8T	SURFACE MOUNT	24		CMOS	1	33 dBm	1.12	.2 mA		COMPONENT	3.3	LCC24,.16SQ,20	50 ohm		105 Cel	-40 Cel	NICKEL PALLADIUM GOLD	25 dB	2.8 dB	HIGH LINEARITY AND ISOLATION	.227 us	e4	10 MHz	8000 MHz	ABSORPTIVE
PE42582A-X	Psemi	SP8T						33.01 dBm				COMPONENT			50 ohm		105 Cel	-40 Cel	NICKEL PALLADIUM GOLD		2.8 dB	HIGH LINEARITY AND ISOLATION		e4	.009 MHz	8000 MHz
HMC253LC4TR	Analog Devices	SP8T	SURFACE MOUNT	24	CERAMIC	GAAS	1				24 dBm		5	LCC24,.16SQ,20		RF/Microwave Switches	85 Cel	-40 Cel	Gold (Au) - with Nickel (Ni) barrier	30 dB	1.7 dB		.1 us	e4		3500 MHz	ABSORPTIVE
HMC321ALP4E	Analog Devices	SP8T						26.02 dBm				COMPONENT			50 ohm		85 Cel	-40 Cel	MATTE TIN		3.1 dB	HIGH ISOLATION		e3	0 MHz	8000 MHz
HMC322ALP4E	Analog Devices	SP8T	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1	24 dBm		9 mA	26 dBm	COMPONENT	-5	LCC24,.16SQ,20	50 ohm		85 Cel	-40 Cel	MATTE TIN	20 dB	2.9 dB		.15 us	e3	0 MHz	8000 MHz	ABSORPTIVE
HMC253QS24E	Analog Devices	SP8T	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1	23.98 dBm			23 dBm	COMPONENT	5	SSOP24,.24	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	MATTE TIN	24 dB	2.4 dB	CMOS/TTL COMPATIBLE	.1 us	e3	0 MHz	2500 MHz	ABSORPTIVE
HMC253QS24ETR	Analog Devices	SP8T	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1				23 dBm		5	SSOP24,.24		RF/Microwave Switches	85 Cel	-40 Cel		24 dB	2.4 dB		.1 us			2500 MHz	ABSORPTIVE
HMC183QS24TR	Analog Devices	SP8T																	Tin/Lead (Sn/Pb)					e0
HMC253LC4	Analog Devices	SP8T	SURFACE MOUNT	24	CERAMIC	GAAS	1				24 dBm	COMPONENT	5	LCC24,.16SQ,20	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Gold (Au) - with Nickel (Ni) barrier	30 dB	1.7 dB	CMOS/TTL COMPATIBLE	.1 us	e4	0 MHz	3500 MHz	ABSORPTIVE
HMC322	Analog Devices	SP8T				GAAS	1	26.02 dBm			23 dBm	COMPONENT	-5	DIE OR CHIP	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Gold (Au)	18 dB	3.4 dB	HIGH ISOLATION	.15 us	e4	0 MHz	10000 MHz	ABSORPTIVE
HMC322LP4E	Analog Devices	SP8T	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1	26.02 dBm			23 dBm	COMPONENT	-5	LCC24,.16SQ,20	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Matte Tin (Sn)	20 dB	2.9 dB	HIGH ISOLATION	.15 us	e3	0 MHz	8000 MHz	ABSORPTIVE
HMC322LP4	Analog Devices	SP8T	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1	26.02 dBm			23 dBm	COMPONENT	-5	LCC24,.16SQ,20	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Tin/Lead (Sn/Pb)	20 dB	2.9 dB	HIGH ISOLATION	.15 us	e0	0 MHz	8000 MHz	ABSORPTIVE
HMC322LP4ETR	Analog Devices	SP8T	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1	26.02 dBm			23 dBm	COMPONENT	-5/GND	LCC24,.16SQ,20	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Matte Tin (Sn)	20 dB	2.9 dB	HIGH ISOLATION	.15 us	e3	0 MHz	8000 MHz	ABSORPTIVE
HMC253QS24	Analog Devices	SP8T	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1	23.98 dBm			23 dBm	COMPONENT	5	SSOP24,.24	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	TIN LEAD	24 dB	2.4 dB	CMOS/TTL COMPATIBLE	.1 us	e0	0 MHz	2500 MHz	ABSORPTIVE
HMC253QS24TR	Analog Devices	SP8T	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1				23 dBm		5	SSOP24,.24		RF/Microwave Switches	85 Cel	-40 Cel		24 dB	2.4 dB		.1 us			2500 MHz	ABSORPTIVE
HMC321LP4	Analog Devices	SP8T	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1	26.02 dBm			23 dBm	COMPONENT	5	LCC24,.16SQ,20	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	TIN LEAD	20 dB	3.1 dB	HIGH ISOLATION	.15 us	e0	0 MHz	8000 MHz	ABSORPTIVE
HMC321ALP4	Analog Devices	SP8T						26.02 dBm				COMPONENT			50 ohm		85 Cel	-40 Cel			3.1 dB	HIGH ISOLATION			0 MHz	8000 MHz
HMC321LP4E	Analog Devices	SP8T	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1	26.02 dBm			23 dBm	COMPONENT	5	LCC24,.16SQ,20	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	MATTE TIN OVER NICKEL	20 dB	3.1 dB	HIGH ISOLATION	.15 us	e3	0 MHz	8000 MHz	ABSORPTIVE
HMC322LP4TR	Analog Devices	SP8T	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1				23 dBm		-5/GND	LCC24,.16SQ,20		RF/Microwave Switches	85 Cel	-40 Cel		20 dB	2.9 dB		.15 us			8000 MHz	ABSORPTIVE
BGS18MA12	Infineon Technologies	SP8T

RF/Microwave Switches

RF/microwave switches are electronic components used to selectively route high-frequency signals between input and output ports. These switches are essential building blocks in radio communication systems, test and measurement equipment, and radar systems. RF/microwave switches are designed to operate in a specific frequency range, and their performance is characterized by parameters such as insertion loss, isolation, and switching speed.

There are different types of RF/microwave switches, including electromechanical switches, PIN diode switches, and solid-state switches. Electromechanical switches use mechanical contacts to switch between input and output ports, while PIN diode switches and solid-state switches use electronic control signals to route signals between different ports. PIN diode switches are suitable for lower power applications, while solid-state switches are capable of handling higher power levels.

RF/microwave switches can be classified based on their configuration and functionality. Single-pole single-throw (SPST) switches have a single input and a single output and can switch between two states, while single-pole double-throw (SPDT) switches have a single input and two outputs and can switch between two output ports. Multi-throw switches have more than two output ports and can switch between multiple states. Switches can also be classified as absorptive or reflective, depending on their ability to absorb or reflect the input signal when it is not being routed to the output port.