Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Compression Point (1 dB) | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Minimum Operating Temperature | Terminal Finish | Minimum Isolation | Maximum Insertion Loss | Additional Features | Nominal On Time | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency | Port Termination |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TE Connectivity |
SPST |
GAAS |
1 |
-5 |
DIE OR CHIP |
RF/Microwave Switches |
125 Cel |
-55 Cel |
50000 MHz |
ABSORPTIVE |
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Qorvo |
SPST |
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Psemi |
SPST |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
CMOS |
1 |
24 dBm |
1.22 |
.04 mA |
33 dBm |
COMPONENT |
3 |
SOLCC6,.12,38 |
50 ohm |
85 Cel |
-40 Cel |
40 dB |
1.8 dB |
HIGH ISOLATION |
2 us |
0 MHz |
5000 MHz |
ABSORPTIVE |
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|
TE Connectivity |
SPST |
GAAS |
1 |
-5 |
DIE OR CHIP |
RF/Microwave Switches |
125 Cel |
-55 Cel |
20 dB |
.6 dB |
50000 MHz |
REFLECTIVE |
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M/a-com Technology Solutions |
SPST |
33.98 dBm |
2.5 |
COMPONENT |
50 ohm |
85 Cel |
-55 Cel |
1.8 dB |
0 MHz |
6000 MHz |
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New England Microwave |
SPST |
7 |
PLASTIC/EPOXY |
ECL |
MIL-STD-883 Class B (Modified) |
1 |
1.2 |
5,-5.2 |
MODULE,7LEAD(UNSPEC) |
RF/Microwave Switches |
125 Cel |
-55 Cel |
60 dB |
1.5 dB |
.007 us |
2000 MHz |
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|
Qorvo |
SPST |
SURFACE MOUNT |
16 |
1 |
27 dBm |
1.22 |
COMPONENT |
0/-5 |
LCC16,.1SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
35 dB |
2 dB |
HIGH ISOLATION |
.018 us |
e4 |
0 MHz |
20000 MHz |
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|
Analog Devices |
SPST |
METAL |
GAAS |
1 |
30 dBm |
27 dBm |
COMPONENT |
MODULE(UNSPEC) |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
37 dB |
2.4 dB |
.006 us |
e4 |
0 MHz |
6000 MHz |
ABSORPTIVE |
||||||||
M/a-com Technology Solutions |
SPST |
1.5 |
50 ohm |
85 Cel |
-55 Cel |
2 dB |
5 MHz |
2000 MHz |
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|
Analog Devices |
SPST |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
3.3 |
TSOP6,.11,37 |
RF/Microwave Switches |
85 Cel |
-40 Cel |
8 dB |
.9 dB |
6000 MHz |
REFLECTIVE |
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Texas Instruments |
SPST |
30 dBm |
1.5 |
COMPONENT |
TTL COMPATIBLE |
0 MHz |
18000 MHz |
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Texas Instruments |
SPST |
GAAS |
1 |
16 dBm |
12 |
DIE OR CHIP |
RF/Microwave Switches |
18000000 MHz |
REFLECTIVE |
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|
Analog Devices |
SPST |
26.99 dBm |
COAXIAL |
50 ohm |
85 Cel |
-55 Cel |
Gold (Au) - with Nickel (Ni) barrier |
9 dB |
SMA-F |
e4 |
0 MHz |
20000 MHz |
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Analog Devices |
SPST |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
3.3 |
TSOP6,.11,37 |
RF/Microwave Switches |
85 Cel |
-40 Cel |
8 dB |
.9 dB |
6000 MHz |
REFLECTIVE |
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|
Analog Devices |
SPST |
GAAS |
1 |
27 dBm |
-5/-8 |
DIE OR CHIP |
RF/Microwave Switches |
125 Cel |
-55 Cel |
35 dB |
2 dB |
.006 us |
6000 MHz |
ABSORPTIVE |
||||||||||||||
|
Analog Devices |
SPST |
GAAS |
1 |
-5/-8 |
DIE OR CHIP |
RF/Microwave Switches |
125 Cel |
-55 Cel |
25 dB |
.006 us |
6000 MHz |
ABSORPTIVE |
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|
Analog Devices |
SPST |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
CMOS |
1 |
18 dBm |
70 mA |
17 dBm |
COMPONENT |
1.65/2.75 |
SOLCC8,.12,20 |
50 ohm |
125 Cel |
-55 Cel |
NICKEL PALLADIUM GOLD |
31 dB |
1.25 dB |
.004 us |
e4 |
0 MHz |
1000 MHz |
ABSORPTIVE |
|||||
|
Analog Devices |
SPST |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
CMOS |
1 |
18 dBm |
70 mA |
17 dBm |
COMPONENT |
1.65/2.75 |
SOLCC8,.12,20 |
50 ohm |
125 Cel |
-55 Cel |
NICKEL PALLADIUM GOLD |
31 dB |
1.25 dB |
.004 us |
e4 |
0 MHz |
1000 MHz |
ABSORPTIVE |
|||||
|
Analog Devices |
SPST |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
45.31 dBm |
COMPONENT |
3.3 |
TSOP6,.11,37 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
8 dB |
.9 dB |
e3 |
0 MHz |
6000 MHz |
REFLECTIVE |
|||||||
Analog Devices |
SPST |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
45.31 dBm |
COMPONENT |
3.3 |
TSOP6,.11,37 |
50 ohm |
RF/Microwave Switches |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
8 dB |
.9 dB |
e0 |
0 MHz |
6000 MHz |
REFLECTIVE |
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|
Renesas Electronics |
SPST |
SURFACE MOUNT |
8 |
1 |
21 dBm |
1.05 |
.304 mA |
COMPONENT |
3.3 |
SOLCC8,.08,20 |
75 ohm |
105 Cel |
-40 Cel |
Tin (Sn) |
75 dB |
.55 dB |
HIGH RELIABILITY, HIGH ISOLATION AND I/P POWER-MAX(PEAK)=24 DBM |
1 us |
e3 |
1 MHz |
3500 MHz |
REFLECTIVE |
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|
Renesas Electronics |
SPST |
SURFACE MOUNT |
8 |
1 |
23 dBm |
3.3 |
.374 mA |
34 dBm |
COMPONENT |
3.3 |
SOLCC8,.08,20 |
50 ohm |
105 Cel |
-55 Cel |
TIN |
30 dB |
1 dB |
HIGH LINEARITY AND ISOLATION, HIGH RELIABILITY |
265 us |
e3 |
30 MHz |
8000 MHz |
ABSORPTIVE |
|||||
|
Renesas Electronics |
SPST |
SURFACE MOUNT |
8 |
1 |
21 dBm |
1.05 |
.304 mA |
COMPONENT |
3.3 |
SOLCC8,.08,20 |
75 ohm |
105 Cel |
-40 Cel |
Tin (Sn) |
75 dB |
.55 dB |
HIGH RELIABILITY, HIGH ISOLATION AND I/P POWER-MAX(PEAK)=24 DBM |
1 us |
e3 |
1 MHz |
3500 MHz |
REFLECTIVE |
||||||
|
Renesas Electronics |
SPST |
SURFACE MOUNT |
8 |
1 |
23 dBm |
3.3 |
.374 mA |
34 dBm |
COMPONENT |
3.3 |
SOLCC8,.08,20 |
50 ohm |
105 Cel |
-55 Cel |
TIN |
30 dB |
1 dB |
HIGH LINEARITY AND ISOLATION, HIGH RELIABILITY |
265 us |
e3 |
30 MHz |
8000 MHz |
ABSORPTIVE |
|||||
|
Renesas Electronics |
SPST |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
2.6 |
TSSOP6,.08 |
RF/Microwave Switches |
85 Cel |
-45 Cel |
7.5 dB |
.65 dB |
1.5 us |
2500 MHz |
|||||||||||||
Broadcom |
SPST |
33.01 dBm |
2.2 |
MODULE |
95 Cel |
-55 Cel |
2 dB |
0 MHz |
18000 MHz |
||||||||||||||||||||
Broadcom |
SPST |
33.01 dBm |
2.5 |
MODULE |
95 Cel |
-55 Cel |
2.5 dB |
0 MHz |
18000 MHz |
||||||||||||||||||||
Broadcom |
SPST |
33.01 dBm |
2 |
MODULE |
95 Cel |
-55 Cel |
2.2 dB |
0 MHz |
18000 MHz |
||||||||||||||||||||
Broadcom |
SPST |
33.01 dBm |
2.2 |
MODULE |
95 Cel |
-55 Cel |
2.5 dB |
0 MHz |
18000 MHz |
RF/microwave switches are electronic components used to selectively route high-frequency signals between input and output ports. These switches are essential building blocks in radio communication systems, test and measurement equipment, and radar systems. RF/microwave switches are designed to operate in a specific frequency range, and their performance is characterized by parameters such as insertion loss, isolation, and switching speed.
There are different types of RF/microwave switches, including electromechanical switches, PIN diode switches, and solid-state switches. Electromechanical switches use mechanical contacts to switch between input and output ports, while PIN diode switches and solid-state switches use electronic control signals to route signals between different ports. PIN diode switches are suitable for lower power applications, while solid-state switches are capable of handling higher power levels.
RF/microwave switches can be classified based on their configuration and functionality. Single-pole single-throw (SPST) switches have a single input and a single output and can switch between two states, while single-pole double-throw (SPDT) switches have a single input and two outputs and can switch between two output ports. Multi-throw switches have more than two output ports and can switch between multiple states. Switches can also be classified as absorptive or reflective, depending on their ability to absorb or reflect the input signal when it is not being routed to the output port.