CMOS RF/Microwave Switches 82

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Compression Point (1 dB)	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	Minimum Isolation	Maximum Insertion Loss	Additional Features	Nominal On Time	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency	Port Termination
4259-63	Psemi	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	CMOS		1	34 dBm			30.5 dBm		3	TSSOP6,.08		RF/Microwave Switches	85 Cel	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	19 dB	.6 dB		1.5 us	e4	10 MHz	3000 MHz	REFLECTIVE
PE4259SCBD-Z	Psemi	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	CMOS		1	34 dBm	1.09	.02 mA	29 dBm	COMPONENT	3	TSSOP6,.08	50 ohm		85 Cel	-40 Cel		19 dB	.6 dB	CMOS COMPATIBLE	1.5 us		10 MHz	3000 MHz	REFLECTIVE
BGS12WN6E6327XTSA1	Infineon Technologies	DIVERSITY SWITCH SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	CMOS		1	28 dBm	1	.12 mA		COMPONENT	1.8/3.3	LCC6,.03X.04,16	50 ohm		85 Cel	-40 Cel		21 dB	.75 dB	CMOS/TTL COMPATIBLE			50 MHz	6000 MHz
ADG918BCPZ-REEL7	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	8	PLASTIC/EPOXY	CMOS		1	17.99 dBm			17 dBm	COMPONENT	1.65/2.75	SOLCC8,.1,20	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	MATTE TIN	36 dB	1.25 dB		.0066 us	e3	0 MHz	4000 MHz	ABSORP/REFLECTIVE
BGS12P2L6E6327XTSA1	Infineon Technologies	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	CMOS	IEC-61000-4-2	1	38 dBm	1	.11 mA		COMPONENT	1.8	SOLCC6,.03,16	50 ohm		85 Cel	-40 Cel		24 dB	.74 dB		.7 us		50 MHz	6000 MHz
ADG919BCPZ-REEL7	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	8	PLASTIC/EPOXY	CMOS		1	17.99 dBm			17 dBm	COMPONENT	1.65/2.75	SOLCC8,.1,20	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	MATTE TIN	36 dB	1.25 dB		.0066 us	e3	0 MHz	4000 MHz	ABSORP/REFLECTIVE
BGS12PL6E6327XTSA1	Infineon Technologies	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	CMOS	IEC-61000-4-2	1	36 dBm	1.04	.35 mA		COMPONENT	2.5/3.3	SOLCC6,.03,16	50 ohm		85 Cel	-30 Cel	GOLD	19 dB	1.15 dB	CMOS/TTL COMPATIBLE, HIGH ISOLATION, HIGH LINEARITY	1.4 us	e4	100 MHz	4000 MHz
ADRF5026BCCZN	Analog Devices	SPDT	SURFACE MOUNT	20		CMOS		1	25 dBm	1.15		27 dBm	COMPONENT	+-3.3	LCC20,.12SQ,16	50 ohm		105 Cel	-40 Cel				HIGH ISOLATION	.014 us		100 MHz	44000 MHz	ABSORPTIVE
ADRF5026BCCZN-R7	Analog Devices	SPDT	SURFACE MOUNT	20		CMOS		1	25 dBm	1.15		27 dBm	COMPONENT	+-3.3	LCC20,.12SQ,16	50 ohm		105 Cel	-40 Cel	NICKEL PALLADIUM GOLD			HIGH ISOLATION	.014 us	e4	100 MHz	44000 MHz	ABSORPTIVE
ADG901BRMZ-REEL7	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	8	PLASTIC/EPOXY	CMOS		1	17.99 dBm			17 dBm	COMPONENT	1.8/2.5	TSSOP8,.19	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	MATTE TIN	31 dB	1.25 dB		.0036 us	e3	0 MHz	2500 MHz	ABSORPTIVE
ADG901BRMZ	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	8	PLASTIC/EPOXY	CMOS		1	17.99 dBm			17 dBm	COMPONENT	1.8/2.5	TSSOP8,.19	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	MATTE TIN	31 dB	1.25 dB		.0036 us	e3	0 MHz	2500 MHz	ABSORPTIVE
PE42540F-Z	Psemi	SP4T	SURFACE MOUNT	32	PLASTIC/EPOXY	CMOS		1	30 dBm	1	.16 mA	33 dBm	COMPONENT	3.3	LCC32,.2SQ,20	50 ohm		85 Cel	-40 Cel	NICKEL PALLADIUM GOLD	21 dB	1.6 dB	HIGH LINEARITY AND ISOLATION	5 us	e4	.00001 MHz	8000 MHz	ABSORPTIVE
ADG918BRMZ	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	8	PLASTIC/EPOXY	CMOS		1	17.99 dBm			17 dBm	COMPONENT	1.65/2.75	TSSOP8,.19	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	MATTE TIN	34 dB	1.25 dB		.0066 us	e3	0 MHz	4000 MHz	ABSORP/REFLECTIVE
SKY13373-460LF	Skyworks Solutions	SP3T	SURFACE MOUNT	12	PLASTIC/EPOXY	CMOS		1	35 dBm				COMPONENT	2.5/4.8	LCC12,.08SQ,20	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	NICKEL PALLADIUM GOLD	18 dB	1 dB	HIGH ISOLATION	1.5 us	e4	100 MHz	3500 MHz
4246-02	Psemi	SPST	SURFACE MOUNT	6	PLASTIC/EPOXY	CMOS		1	24 dBm	1.22	.04 mA	33 dBm	COMPONENT	3	SOLCC6,.12,38	50 ohm		85 Cel	-40 Cel		40 dB	1.8 dB	HIGH ISOLATION	2 us		0 MHz	5000 MHz	ABSORPTIVE
PE42482A-X	Psemi	SP8T	SURFACE MOUNT	24		CMOS		1	33 dBm	1.12	.2 mA		COMPONENT	3.3	LCC24,.16SQ,20	50 ohm		105 Cel	-40 Cel	NICKEL PALLADIUM GOLD	25 dB	2.8 dB	HIGH LINEARITY AND ISOLATION	.227 us	e4	10 MHz	8000 MHz	ABSORPTIVE
UPD5713TK-E2-A	Renesas Electronics	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	CMOS		1	23.01 dBm			21 dBm	COMPONENT	2.8	FL6,.047,20		RF/Microwave Switches	85 Cel	-45 Cel	Tin/Bismuth (Sn/Bi)	20 dB	1.2 dB			e6	50 MHz	2500 MHz
PE42420F-Z	Psemi	SPDT	SURFACE MOUNT	20	PLASTIC/EPOXY	CMOS		1	25 dBm	1.22	.2 mA		COMPONENT	3	LCC20,.16SQ,20	50 ohm		105 Cel	-40 Cel		44 dB	1.9 dB	HIGH LINEARITY AND ISOLATION, I/P POWER-MAX(PEAK)=0.63W	.3 us		20 MHz	6000 MHz	ABSORPTIVE
ADG918BRMZ-REEL7	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	8	PLASTIC/EPOXY	CMOS		1	17.99 dBm			17 dBm	COMPONENT	1.65/2.75	TSSOP8,.19	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	MATTE TIN	34 dB	1.25 dB		.0066 us	e3	0 MHz	4000 MHz	ABSORP/REFLECTIVE
PE42520MLBA-Z	Psemi	SPDT	SURFACE MOUNT	16	PLASTIC/EPOXY	CMOS		1	36 dBm	1.15	.2 mA		COMPONENT	3.3/3.4	LCC16,.12SQ,20	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	NICKEL PALLADIUM GOLD	13 dB	2.7 dB	HIGH LINEARITY AND ISOLATION	5.5 us	e4	.009 MHz	13000 MHz	ABSORPTIVE
ADG918BCPZ-500RL7	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	8	PLASTIC/EPOXY	CMOS		1	17.99 dBm			17 dBm	COMPONENT	1.65/2.75	SOLCC8,.1,20	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	MATTE TIN	36 dB	1.25 dB		.0066 us	e3	0 MHz	4000 MHz	ABSORP/REFLECTIVE
ADRF5025BCCZN	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	12	PLASTIC/EPOXY	CMOS		1	27.5 dBm			27.5 dBm	COMPONENT	+-3.3	LCC12,.1SQ,16	50 ohm		105 Cel	-40 Cel	NICKEL PALLADIUM GOLD				1.7 us	e4	.009 MHz	44000 MHz	REFLECTIVE
HSWA2-63DR+	Mini-circuits	SPDT	SURFACE MOUNT	20	PLASTIC/EPOXY	CMOS		1	30 dBm	1.22	.2 mA	35 dBm	COMPONENT	3		50 ohm		105 Cel	-40 Cel		44 dB	1.9 dB				100 MHz	6000 MHz	ABSORPTIVE
4230-52	Psemi	SPDT	SURFACE MOUNT	8	PLASTIC/EPOXY	CMOS		1	35 dBm	1.11	.035 mA	32 dBm	COMPONENT	3	TSSOP8,.19	50 ohm		85 Cel	-40 Cel	Matte Tin (Sn)	26.5 dB	.65 dB	HIGH ISOLATION	.2 us	e3	0 MHz	3000 MHz	REFLECTIVE
ADG919BRMZ	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	8	PLASTIC/EPOXY	CMOS		1	17.99 dBm			17 dBm	COMPONENT	1.65/2.75	TSSOP8,.19	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	MATTE TIN	34 dB	1.25 dB		.0066 us	e3	0 MHz	4000 MHz	ABSORP/REFLECTIVE
PE42520C-Z	Psemi	SPDT	SURFACE MOUNT	16	PLASTIC/EPOXY	CMOS		1	36 dBm	1.15	.2 mA		COMPONENT	3.3/3.4	LCC16,.12SQ,20	50 ohm		85 Cel	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	13 dB	2.7 dB	HIGH LINEARITY AND ISOLATION	5.5 us	e4	.009 MHz	13000 MHz	ABSORPTIVE
PE42424A-Z	Psemi	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	CMOS		1	29 dBm	1.2	.3 mA	40 dBm	COMPONENT	3.3	SOLCC6,.06,20	50 ohm		105 Cel	-40 Cel	NICKEL PALLADIUM GOLD	24 dB	1.6 dB	HIGH LINEARITY, I/P POWER-MAX(PULSE)=7.94W	.145 us		100 MHz	8500 MHz	REFLECTIVE
PE42441E-Z	Psemi	SP4T	SURFACE MOUNT	32		CMOS	MIL-STD-883	1	20 dBm	1.1	.16 mA		COMPONENT	3.3	LCC32,.2SQ,20	50 ohm		85 Cel	-40 Cel		21 dB	1.6 dB	HIGH LINEARITY AND ISOLATION	5 us		10 MHz	8000 MHz	ABSORPTIVE
PE42742MLIBB-Z	Psemi	SPDT	SURFACE MOUNT	20		CMOS	MIL-STD-883	1	24 dBm				COMPONENT	3	LCC20,.16SQ,20	75 ohm		85 Cel	-40 Cel	MATTE TIN	49 dB	1.9 dB	HIGH ISOLATION	3 us	e3	5 MHz	2200 MHz	ABSORPTIVE
4257-52	Psemi	SPDT	SURFACE MOUNT	20	PLASTIC/EPOXY	CMOS		1	32.99 dBm			31 dBm	COMPONENT	3	LCC20,.16SQ,20	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Matte Tin (Sn)	40 dB	1.4 dB	HIGH ISOLATION	2 us	e3	0 MHz	3000 MHz	ABSORPTIVE
PE4251MLI-Z	Psemi	SPDT	SURFACE MOUNT	8	PLASTIC/EPOXY	CMOS		1	26.99 dBm			30.5 dBm	COMPONENT	3.3/5	TSSOP8,.19	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	MATTE TIN	42 dB	.9 dB	HIGH ISOLATION	.15 us	e3	10 MHz	3000 MHz	ABSORPTIVE
PE42522B-X	Psemi	SPDT	SURFACE MOUNT	29		CMOS		1	33 dBm	1.15	.2 mA		COMPONENT	3.3/3.4		50 ohm		85 Cel	-40 Cel		18 dB	6.95 dB	HIGH LINEARITY, I/P POWER-MAX(PULSE)=2.51W	3 us		.009 MHz	26500 MHz	ABSORPTIVE
PE42543B-X	Psemi	SP4T	SURFACE MOUNT	29	PLASTIC/EPOXY	CMOS		1	33 dBm	1.17	.2 mA		COMPONENT	3.3/3.4		50 ohm		85 Cel	-40 Cel		24 dB	4.7 dB	HIGH LINEARITY AND ISOLATION, I/P POWER-MAX(PULSE)=2.51W	.5 us		.009 MHz	18000 MHz	ABSORPTIVE
ADG901BCP	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	8	PLASTIC/EPOXY	CMOS		1	18.06 dBm			20 dBm	COMPONENT	1.8/2.5	SOLCC8,.1,20	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Tin/Lead (Sn/Pb)		1.25 dB		.005 us	e0	0 MHz	2500 MHz	ABSORPTIVE
ADG918BCP-REEL7	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	8	PLASTIC/EPOXY	CMOS		1	17.99 dBm			17 dBm	COMPONENT	1.65/2.75	SOLCC8,.1,20	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Tin/Lead (Sn85Pb15)	36 dB	1.25 dB		.0066 us	e0	0 MHz	4000 MHz	ABSORP/REFLECTIVE
ADG901BRM-REEL7	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	8	PLASTIC/EPOXY	CMOS		1	17.99 dBm			17 dBm	COMPONENT	1.8/2.5	TSSOP8,.19	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Tin/Lead (Sn85Pb15)	31 dB	1.25 dB		.0036 us	e0	0 MHz	2500 MHz	ABSORPTIVE
ADG902BRMZ	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	8	PLASTIC/EPOXY	CMOS		1	17.99 dBm			20 dBm	COMPONENT	1.8/2.5	TSSOP8,.19	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	MATTE TIN		1.25 dB		.005 us	e3	0 MHz	2500 MHz	REFLECTIVE
ADG901BCP-REEL7	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	8	PLASTIC/EPOXY	CMOS		1	17.99 dBm			17 dBm	COMPONENT	1.8/2.5	SOLCC8,.1,20	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Tin/Lead (Sn85Pb15)	31 dB	1.25 dB		.0036 us	e0	0 MHz	2500 MHz	ABSORPTIVE
HMC596LP4TR	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	24	PLASTIC/EPOXY	CMOS		2				22 dBm		5	LCC24,.16SQ,20		RF/Microwave Switches	85 Cel	-40 Cel		37 dB	9 dB		.0065 us			3000 MHz	ABSORPTIVE
ADG901BCPZ-REEL7	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	8	PLASTIC/EPOXY	CMOS		1	17.99 dBm			17 dBm	COMPONENT	1.8/2.5	SOLCC8,.11,20	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Matte Tin (Sn)	31 dB	1.25 dB		.0036 us	e3	0 MHz	2500 MHz	ABSORPTIVE
ADG902BCP-500RL7	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	8	PLASTIC/EPOXY	CMOS		1	17.99 dBm			17 dBm	COMPONENT	1.8/2.5	SOLCC8,.1,20	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Tin/Lead (Sn85Pb15)	34 dB	1.25 dB		.0036 us	e0	0 MHz	2500 MHz	REFLECTIVE
ADG901BRM	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	8	PLASTIC/EPOXY	CMOS		1	17.99 dBm			20 dBm	COMPONENT	1.8/2.5	TSSOP8,.19	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	TIN LEAD		1.25 dB		.005 us	e0	0 MHz	2500 MHz	ABSORPTIVE
ADG918BRM	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	8	PLASTIC/EPOXY	CMOS		1	17.99 dBm			20 dBm	COMPONENT	1.8/5	TSSOP8,.19	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	TIN LEAD		1.25 dB		.005 us	e0	0 MHz	4000 MHz	ABSORP/REFLECTIVE
HMC596LP4ERTR	Analog Devices	DPDT	SURFACE MOUNT	24	PLASTIC/EPOXY	CMOS		2				22 dBm		5	LCC24,.16SQ,20		RF/Microwave Switches	85 Cel	-40 Cel		37 dB	9 dB		.0065 us			3000 MHz	ABSORPTIVE
ADG918BCP-500RL7	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	8	PLASTIC/EPOXY	CMOS		1	17.99 dBm			17 dBm	COMPONENT	1.65/2.75	SOLCC8,.1,20	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Tin/Lead (Sn85Pb15)	36 dB	1.25 dB		.0066 us	e0	0 MHz	4000 MHz	ABSORP/REFLECTIVE
ADG918BCP	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	8		CMOS		1	18.06 dBm			20 dBm	COMPONENT	1.8/5	LCC8(UNSPEC)	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Tin/Lead (Sn/Pb)		1.25 dB		.005 us	e0	0 MHz	2000 MHz	ABSORP/REFLECTIVE
ADG918BRM-500RL7	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	8	PLASTIC/EPOXY	CMOS		1	17.99 dBm			17 dBm	COMPONENT	1.65/2.75	TSSOP8,.19	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Tin/Lead (Sn85Pb15)	34 dB	1.25 dB		.0066 us	e0	0 MHz	4000 MHz	ABSORP/REFLECTIVE
ADG919BRM-REEL	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	8	PLASTIC/EPOXY	CMOS		1	17.99 dBm			17 dBm	COMPONENT	1.65/2.75	TSSOP8,.19	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Tin/Lead (Sn85Pb15)	34 dB	1.25 dB		.0066 us	e0	0 MHz	4000 MHz	ABSORP/REFLECTIVE

RF/Microwave Switches

RF/microwave switches are electronic components used to selectively route high-frequency signals between input and output ports. These switches are essential building blocks in radio communication systems, test and measurement equipment, and radar systems. RF/microwave switches are designed to operate in a specific frequency range, and their performance is characterized by parameters such as insertion loss, isolation, and switching speed.

There are different types of RF/microwave switches, including electromechanical switches, PIN diode switches, and solid-state switches. Electromechanical switches use mechanical contacts to switch between input and output ports, while PIN diode switches and solid-state switches use electronic control signals to route signals between different ports. PIN diode switches are suitable for lower power applications, while solid-state switches are capable of handling higher power levels.

RF/microwave switches can be classified based on their configuration and functionality. Single-pole single-throw (SPST) switches have a single input and a single output and can switch between two states, while single-pole double-throw (SPDT) switches have a single input and two outputs and can switch between two output ports. Multi-throw switches have more than two output ports and can switch between multiple states. Switches can also be classified as absorptive or reflective, depending on their ability to absorb or reflect the input signal when it is not being routed to the output port.