GAAS RF/Microwave Switches 368

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Compression Point (1 dB)	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	Minimum Isolation	Maximum Insertion Loss	Additional Features	Nominal On Time	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency	Port Termination
HMC547ALP3	Analog Devices	SPDT	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	30 dBm			23 dBm	COMPONENT		LCC16,.12SQ,20	50 ohm		85 Cel	-40 Cel		33 dB	2.5 dB		.006 us		0 MHz	20000 MHz	ABSORPTIVE
HMC347C8	Analog Devices	SPDT	SURFACE MOUNT	8	CERAMIC	GAAS	1	26.99 dBm			23 dBm	COMPONENT		SOP8,.3	50 ohm	RF/Microwave Switches	85 Cel	-55 Cel	Gold (Au) - with Nickel (Ni) barrier	32 dB	2.8 dB		.006 us	e4	0 MHz	8000 MHz	ABSORPTIVE
HMC536MS8G	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	29.03 dBm				COMPONENT	5	TSSOP8,.19	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	TIN LEAD	23 dB	1 dB		.03 us	e0	0 MHz	6000 MHz
HMC544ETR	Analog Devices	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	39.03 dBm			36 dBm	COMPONENT		TSOP6,.11,37	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Matte Tin (Sn)	8 dB	1 dB		.14 us	e3	0 MHz	4000 MHz
HMC232	Analog Devices	SPDT				GAAS	1	30 dBm			26 dBm	COMPONENT	-5	DIE OR CHIP	50 ohm	RF/Microwave Switches	85 Cel	-55 Cel	Gold (Au)	40 dB	3.4 dB	HIGH ISOLATION	.005 us	e4	0 MHz	15000 MHz	ABSORPTIVE
HMC276QS24TR	Analog Devices	SPDT	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	4				26 dBm		5	SSOP24,.24		RF/Microwave Switches	85 Cel	-40 Cel		26 dB	7 dB		.35 us			3000 MHz
HMC174MS8RTR	Analog Devices	TRANSFER SWITCH	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1				36 dBm		5	TSSOP8,.19		RF/Microwave Switches	85 Cel	-40 Cel	Tin/Lead (Sn/Pb)	15 dB	1.8 dB		.024 us	e0		3000 MHz	REFLECTIVE
HMC174MS8	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1				36 dBm	COMPONENT	5	TSSOP8,.19	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Tin/Lead (Sn/Pb)	15 dB	1.8 dB	CMOS/TTL COMPATIBLE	.024 us	e0	0 MHz	3000 MHz	REFLECTIVE
HMC344LC3TR	Analog Devices	SP4T	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1						-5	LCC16,.12SQ,20		RF/Microwave Switches	85 Cel	-40 Cel		30 dB	3 dB		.15 us			8000 MHz	ABSORPTIVE
HMC646LP2TR	Analog Devices	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1						5	SOLCC6,.08,25		RF/Microwave Switches	85 Cel	-40 Cel		12 dB	1.7 dB		.32 us			2025 MHz
HMC253AQS24	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1	20 dBm		7.5 mA	23 dBm	COMPONENT	5	SSOP24,.24	50 ohm		85 Cel	-40 Cel	TIN LEAD	28 dB	2.1 dB		.09 us	e0	0 MHz	2500 MHz
HMC239AS8	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	27 dBm			27 dBm	COMPONENT		SOP8,.25	50 ohm		85 Cel	-40 Cel		14 dB	1 dB		.01 us		0 MHz	2500 MHz	REFLECTIVE
HMC536LP2	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	29.03 dBm				COMPONENT	5	SOLCC6,.08,25	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	TIN LEAD	23 dB	1.3 dB		.07 us	e0	0 MHz	6000 MHz
HMC344LP3	Analog Devices	SP4T	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	23.98 dBm			21 dBm	COMPONENT	-5	LCC16,.12SQ,20	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Tin/Lead (Sn/Pb)	31 dB	2.5 dB	HIGH ISOLATION	.15 us	e0	0 MHz	8000 MHz
HMC347LP3	Analog Devices	SPDT	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	26.99 dBm			23 dBm	COMPONENT	-5	LCC16,.12SQ,20	50 ohm	RF/Microwave Switches	85 Cel	-55 Cel	Tin/Lead (Sn/Pb)	33 dB	2.4 dB	HIGH ISOLATION	.006 us	e0	0 MHz	14000 MHz
HMC321LP4E	Analog Devices	SP8T	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1	26.02 dBm			23 dBm	COMPONENT	5	LCC24,.16SQ,20	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	MATTE TIN OVER NICKEL	20 dB	3.1 dB	HIGH ISOLATION	.15 us	e3	0 MHz	8000 MHz	ABSORPTIVE
HMC174MS8ETR	Analog Devices	SPDT	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1				36 dBm		5	TSSOP8,.19		RF/Microwave Switches	85 Cel	-40 Cel	Matte Tin (Sn)	15 dB	1.8 dB		.024 us	e3		3000 MHz	REFLECTIVE
HMC536LP2E	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	29.03 dBm				COMPONENT	5	SOLCC6,.08,25	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	MATTE TIN	23 dB	1.3 dB		.07 us	e3	0 MHz	6000 MHz
HMC232G8	Analog Devices	SPDT	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	30 dBm			27 dBm	COMPONENT	5	SOP8,.4	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Gold (Au) - with Nickel (Ni) barrier	29 dB	2.2 dB		.006 us	e4	0 MHz	6000 MHz	ABSORPTIVE
HMC182S14	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	14	PLASTIC/EPOXY	GAAS	1	30 dBm			22 dBm	COMPONENT	-5	SOP14,.25	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	TIN LEAD	28 dB	1.2 dB		.05 us	e0	0 MHz	2000 MHz	ABSORPTIVE
HMC322LP4TR	Analog Devices	SP8T	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1				23 dBm		-5/GND	LCC24,.16SQ,20		RF/Microwave Switches	85 Cel	-40 Cel		20 dB	2.9 dB		.15 us			8000 MHz	ABSORPTIVE
HMC174MS8TR	Analog Devices	TRANSFER SWITCH	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1				36 dBm		5	TSSOP8,.19		RF/Microwave Switches	85 Cel	-40 Cel	Tin/Lead (Sn/Pb)	15 dB	1.8 dB		.024 us	e0		3000 MHz	REFLECTIVE
HMC221B	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	20 dBm			8 dBm	COMPONENT		TSOP6,.11,37	50 ohm		85 Cel	-40 Cel		14 dB	1.1 dB		.01 us		.01 MHz	3000 MHz	REFLECTIVE
HMC545	Analog Devices	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	33.98 dBm				COMPONENT		TSOP6,.11,37	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Tin/Lead (Sn/Pb)	20 dB	.7 dB	CMOS COMPATIBLE		e0	0 MHz	3000 MHz	REFLECTIVE
HMC345LP3E	Analog Devices	SP4T	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	23.98 dBm			21 dBm	COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	MATTE TIN	27 dB	2.9 dB	HIGH ISOLATION	.12 us	e3	0 MHz	8000 MHz	ABSORPTIVE
HMC232C8	Analog Devices	SPDT	SURFACE MOUNT	8	CERAMIC	GAAS	1	30 dBm			26 dBm	COMPONENT	-5	SOP8,.3	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Gold (Au) - with Nickel (Ni) barrier	37 dB	2.8 dB		.005 us	e4	0 MHz	8000 MHz	ABSORPTIVE
HMC183QS24E	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1	29.03 dBm			18 dBm	COMPONENT	-5	SSOP24,.24	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Matte Tin (Sn)	26 dB	1.8 dB		.05 us	e3	0 MHz	2000 MHz	ABSORPTIVE
HMC336MS8G	Analog Devices	SPDT	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	27.99 dBm			25 dBm	COMPONENT		TSSOP8,.19	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	TIN LEAD	37 dB	2 dB		.02 us	e0	0 MHz	6000 MHz	ABSORPTIVE
SPM3202	Onsemi	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1		1.5		15 dBm			TSSOP6,.08		RF/Microwave Switches	85 Cel	-20 Cel		15 dB	.85 dB		.02 us
SPM3221	Onsemi	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1		1.5		27 dBm		3	FL6,.07,25		RF/Microwave Switches	85 Cel	-40 Cel		27 dB	.4 dB		.05 us			2500 MHz
SPM3225	Onsemi	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1		1.5		31 dBm		1.8/3	TSSOP6,.08		RF/Microwave Switches	85 Cel	-40 Cel		16 dB	.6 dB		.02 us			2500 MHz
SPM3252	Onsemi	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1		2					TSOP6,.11,37		RF/Microwave Switches	70 Cel	-20 Cel		20 dB	.95 dB		.02 us			1900 MHz
SPM3205	Onsemi	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1		1.5		15 dBm			TSOP6,.11,37		RF/Microwave Switches	85 Cel	-20 Cel		15 dB	.85 dB		.02 us			1033 MHz
SPM3224	Onsemi	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1		1.5				2.8	TSSOP6,.08		RF/Microwave Switches	85 Cel	-40 Cel		15 dB	.55 dB		.02 us			2500 MHz
CSH210R	Infineon Technologies	DIVERSITY SWITCH	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	34.77 dBm	1.5		30 dBm	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Switches				13 dB	.7 dB		.02 us		0 MHz	3000 MHz
CSY240	Infineon Technologies	DIVERSITY SWITCH	SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS	1	10 dBm			30 dBm	COMPONENT	-5	TSOP5/6,.11,37		RF/Microwave Switches			Tin/Lead (Sn/Pb)					e0	500 MHz	3000 MHz	REFLECTIVE
CSH210	Infineon Technologies	DIVERSITY SWITCH	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	34.77 dBm	1.5			COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Switches				20 dB	.75 dB				0 MHz	3000 MHz	REFLECTIVE
CSH210P	Infineon Technologies	DIVERSITY SWITCH	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	36.53 dBm	1.55		34 dBm	COMPONENT	3/5	TSSOP6,.08	50 ohm	RF/Microwave Switches					.75 dB		.02 us		0 MHz	3000 MHz	REFLECTIVE
CSH410	Infineon Technologies	SP4T	SURFACE MOUNT		CERAMIC	GAAS	1	37.78 dBm			38 dBm	COMPONENT	3/5	LCC(UNSPEC)		RF/Microwave Switches			Tin/Lead (Sn/Pb)	21 dB	1 dB		.02 us	e0	1000 MHz	2000 MHz	REFLECTIVE
CSY210	Infineon Technologies	DIVERSITY SWITCH	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1		1.2	.1 mA		COMPONENT	3	TSOP8,.1,30/24	50 ohm	RF/Microwave Amplifiers			Tin/Lead (Sn/Pb)					e0	500 MHz	2000 MHz
TG2200F	Toshiba	SPDT	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	30 dBm			24 dBm	COMPONENT	3	TSSOP8,.16	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel		18 dB	2 dB				1895 MHz	1918 MHz
TG2211FT	Toshiba	DIVERSITY SWITCH	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	25.44 dBm			22 dBm	COMPONENT	2.7	TSSOP6,.08	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Tin/Lead (Sn/Pb)	14 dB	.85 dB			e0	1000 MHz	2500 MHz
TG2200AF	Toshiba	SPDT	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	30 dBm			24 dBm	COMPONENT	3	TSSOP8,.16	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel		20 dB	1 dB		.1 us		1895 MHz	1918 MHz	ABSORPTIVE
TG2211AFT	Toshiba	DIVERSITY SWITCH	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	25.05 dBm			22 dBm	COMPONENT	2.5	TSSOP6,.08	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel		14 dB	.85 dB				1000 MHz	2500 MHz
TG2217CTB	Toshiba	DIVERSITY SWITCH	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	23.01 dBm			17 dBm	COMPONENT	2.6	SOLCC6,.04,14	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel		18 dB	.75 dB				1000 MHz	2500 MHz
TG2216TU	Toshiba	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	30 dBm			28 dBm	COMPONENT	2.7	FL6,.07,25	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel		20 dB	1 dB				1000 MHz	2500 MHz
TG2204F	Toshiba	SPDT	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	30 dBm			24 dBm	COMPONENT	3	TSSOP8,.16	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Tin/Lead (Sn/Pb)	20 dB	1 dB		.01 us	e0	1895 MHz	1918 MHz	ABSORPTIVE
TG2205F	Toshiba	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	30 dBm			24 dBm	COMPONENT	3	TSOP6,.11,37	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Tin/Lead (Sn/Pb)	20 dB	1 dB		.01 us	e0		3000 MHz	ABSORPTIVE

RF/Microwave Switches

RF/microwave switches are electronic components used to selectively route high-frequency signals between input and output ports. These switches are essential building blocks in radio communication systems, test and measurement equipment, and radar systems. RF/microwave switches are designed to operate in a specific frequency range, and their performance is characterized by parameters such as insertion loss, isolation, and switching speed.

There are different types of RF/microwave switches, including electromechanical switches, PIN diode switches, and solid-state switches. Electromechanical switches use mechanical contacts to switch between input and output ports, while PIN diode switches and solid-state switches use electronic control signals to route signals between different ports. PIN diode switches are suitable for lower power applications, while solid-state switches are capable of handling higher power levels.

RF/microwave switches can be classified based on their configuration and functionality. Single-pole single-throw (SPST) switches have a single input and a single output and can switch between two states, while single-pole double-throw (SPDT) switches have a single input and two outputs and can switch between two output ports. Multi-throw switches have more than two output ports and can switch between multiple states. Switches can also be classified as absorptive or reflective, depending on their ability to absorb or reflect the input signal when it is not being routed to the output port.