Analog Devices RF/Microwave Switches 412

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Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level No. of Functions Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Compression Point (1 dB) Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Minimum Operating Temperature Terminal Finish Minimum Isolation Maximum Insertion Loss Additional Features Nominal On Time JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency Port Termination

HMC252AQS24E

Analog Devices

DIVERSITY SWITCH

29.78 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

MATTE TIN

1.8 dB

CMOS COMPATIBLE

e3

0 MHz

3000 MHz

HMC241ATCPZ-EP-R7

Analog Devices

DIVERSITY SWITCH

17.48 dBm

COMPONENT

50 ohm

125 Cel

-55 Cel

1.5 dB

HIGH ISOLATION

100 MHz

4000 MHz

HMC322LP4TR

Analog Devices

SP8T

SURFACE MOUNT

24

PLASTIC/EPOXY

GAAS

1

23 dBm

-5/GND

LCC24,.16SQ,20

RF/Microwave Switches

85 Cel

-40 Cel

20 dB

2.9 dB

.15 us

8000 MHz

ABSORPTIVE

HMC174MS8TR

Analog Devices

TRANSFER SWITCH

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

36 dBm

5

TSSOP8,.19

RF/Microwave Switches

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

15 dB

1.8 dB

.024 us

e0

3000 MHz

REFLECTIVE

HMC221B

Analog Devices

DIVERSITY SWITCH

SURFACE MOUNT

6

PLASTIC/EPOXY

GAAS

1

20 dBm

8 dBm

COMPONENT

TSOP6,.11,37

50 ohm

85 Cel

-40 Cel

14 dB

1.1 dB

.01 us

.01 MHz

3000 MHz

REFLECTIVE

HMC545

Analog Devices

SPDT

SURFACE MOUNT

6

PLASTIC/EPOXY

GAAS

1

33.98 dBm

COMPONENT

TSOP6,.11,37

50 ohm

RF/Microwave Switches

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

20 dB

.7 dB

CMOS COMPATIBLE

e0

0 MHz

3000 MHz

REFLECTIVE

HMC233G8

Analog Devices

SPDT

30 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

Gold (Au) - with Nickel (Ni) barrier

2.2 dB

e4

0 MHz

6000 MHz

HMC345LP3E

Analog Devices

SP4T

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

1

23.98 dBm

21 dBm

COMPONENT

5

LCC16,.12SQ,20

50 ohm

RF/Microwave Switches

85 Cel

-40 Cel

MATTE TIN

27 dB

2.9 dB

HIGH ISOLATION

.12 us

e3

0 MHz

8000 MHz

ABSORPTIVE

HMC232C8

Analog Devices

SPDT

SURFACE MOUNT

8

CERAMIC

GAAS

1

30 dBm

26 dBm

COMPONENT

-5

SOP8,.3

50 ohm

RF/Microwave Switches

85 Cel

-40 Cel

Gold (Au) - with Nickel (Ni) barrier

37 dB

2.8 dB

.005 us

e4

0 MHz

8000 MHz

ABSORPTIVE

HMC276LP4

Analog Devices

SPDT

23.01 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

7 dB

e0

200 MHz

3000 MHz

HMC183QS24E

Analog Devices

DIVERSITY SWITCH

SURFACE MOUNT

24

PLASTIC/EPOXY

GAAS

1

29.03 dBm

18 dBm

COMPONENT

-5

SSOP24,.24

50 ohm

RF/Microwave Switches

85 Cel

-40 Cel

Matte Tin (Sn)

26 dB

1.8 dB

.05 us

e3

0 MHz

2000 MHz

ABSORPTIVE

ADG918BRMZ-500RL7

Analog Devices

DIVERSITY SWITCH

SURFACE MOUNT

8

PLASTIC/EPOXY

CMOS

1

17.99 dBm

17 dBm

COMPONENT

1.65/2.75

TSSOP8,.19

50 ohm

RF/Microwave Switches

85 Cel

-40 Cel

MATTE TIN

34 dB

1.25 dB

.0066 us

e3

0 MHz

4000 MHz

ABSORP/REFLECTIVE

HMC336MS8G

Analog Devices

SPDT

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

27.99 dBm

25 dBm

COMPONENT

TSSOP8,.19

50 ohm

RF/Microwave Switches

85 Cel

-40 Cel

TIN LEAD

37 dB

2 dB

.02 us

e0

0 MHz

6000 MHz

ABSORPTIVE

HMC270MS8GTR

Analog Devices

SPDT

23.98 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

2.4 dB

e0

0 MHz

8000 MHz

ADG919BCP

Analog Devices

DIVERSITY SWITCH

SURFACE MOUNT

8

CMOS

1

18.06 dBm

20 dBm

COMPONENT

1.8/5

LCC8(UNSPEC)

50 ohm

RF/Microwave Switches

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

1.25 dB

.005 us

e0

0 MHz

2000 MHz

ABSORP/REFLECTIVE

ADRF5345BCCZN-R7

Analog Devices

SP4T

SURFACE MOUNT

22

1

42.5 dBm

1.13

COMPONENT

5

LCC22,.16SQ,20

50 ohm

105 Cel

-40 Cel

140 us

1800 MHz

3800 MHz

REFLECTIVE

ADRF5345BCCZN

Analog Devices

SP4T

SURFACE MOUNT

22

1

42.5 dBm

1.13

COMPONENT

5

LCC22,.16SQ,20

50 ohm

105 Cel

-40 Cel

140 us

1800 MHz

3800 MHz

REFLECTIVE

ADRF5345BCCZN-RL

Analog Devices

SP4T

SURFACE MOUNT

22

1

42.5 dBm

1.13

COMPONENT

5

LCC22,.16SQ,20

50 ohm

105 Cel

-40 Cel

140 us

1800 MHz

3800 MHz

REFLECTIVE

HMC8800

Analog Devices

SPDT

SURFACE MOUNT

10

38535V;38534K;883S

1

30 dBm

COMPONENT

DIE OR CHIP

50 ohm

85 Cel

-55 Cel

40 dB

2.9 dB

0 MHz

15000 MHz

ADRF5043

Analog Devices

SP4T

ADRF5042

Analog Devices

SP4T

ADRF5032

Analog Devices

SPDT

ADRF5144

Analog Devices

SPDT

ADRF5301

Analog Devices

SPDT

ADRF5049BCCZN-R7

Analog Devices

SP4T

ADRF5032BCCZN

Analog Devices

SPDT

ADRF5049BCCZN

Analog Devices

SP4T

ADRF5032BCCZN-R7

Analog Devices

SPDT

RF/Microwave Switches

RF/microwave switches are electronic components used to selectively route high-frequency signals between input and output ports. These switches are essential building blocks in radio communication systems, test and measurement equipment, and radar systems. RF/microwave switches are designed to operate in a specific frequency range, and their performance is characterized by parameters such as insertion loss, isolation, and switching speed.

There are different types of RF/microwave switches, including electromechanical switches, PIN diode switches, and solid-state switches. Electromechanical switches use mechanical contacts to switch between input and output ports, while PIN diode switches and solid-state switches use electronic control signals to route signals between different ports. PIN diode switches are suitable for lower power applications, while solid-state switches are capable of handling higher power levels.

RF/microwave switches can be classified based on their configuration and functionality. Single-pole single-throw (SPST) switches have a single input and a single output and can switch between two states, while single-pole double-throw (SPDT) switches have a single input and two outputs and can switch between two output ports. Multi-throw switches have more than two output ports and can switch between multiple states. Switches can also be classified as absorptive or reflective, depending on their ability to absorb or reflect the input signal when it is not being routed to the output port.