Toshiba RF/Microwave Switches 15

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Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level No. of Functions Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Compression Point (1 dB) Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Minimum Operating Temperature Terminal Finish Minimum Isolation Maximum Insertion Loss Additional Features Nominal On Time JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency Port Termination

TG2200F

Toshiba

SPDT

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

30 dBm

24 dBm

COMPONENT

3

TSSOP8,.16

50 ohm

RF/Microwave Switches

85 Cel

-40 Cel

18 dB

2 dB

1895 MHz

1918 MHz

TG2211FT

Toshiba

DIVERSITY SWITCH

SURFACE MOUNT

6

PLASTIC/EPOXY

GAAS

1

25.44 dBm

22 dBm

COMPONENT

2.7

TSSOP6,.08

50 ohm

RF/Microwave Switches

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

14 dB

.85 dB

e0

1000 MHz

2500 MHz

TG2206F

Toshiba

DIVERSITY SWITCH

30 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

.7 dB

1000 MHz

TG2200AF

Toshiba

SPDT

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

30 dBm

24 dBm

COMPONENT

3

TSSOP8,.16

50 ohm

RF/Microwave Switches

85 Cel

-40 Cel

20 dB

1 dB

.1 us

1895 MHz

1918 MHz

ABSORPTIVE

TG2211AFT

Toshiba

DIVERSITY SWITCH

SURFACE MOUNT

6

PLASTIC/EPOXY

GAAS

1

25.05 dBm

22 dBm

COMPONENT

2.5

TSSOP6,.08

50 ohm

RF/Microwave Switches

85 Cel

-40 Cel

14 dB

.85 dB

1000 MHz

2500 MHz

TG2203F

Toshiba

SPDT

TG2217CTB

Toshiba

DIVERSITY SWITCH

SURFACE MOUNT

6

PLASTIC/EPOXY

GAAS

1

23.01 dBm

17 dBm

COMPONENT

2.6

SOLCC6,.04,14

50 ohm

RF/Microwave Switches

85 Cel

-40 Cel

18 dB

.75 dB

1000 MHz

2500 MHz

TG2216TU

Toshiba

SPDT

SURFACE MOUNT

6

PLASTIC/EPOXY

GAAS

1

30 dBm

28 dBm

COMPONENT

2.7

FL6,.07,25

50 ohm

RF/Microwave Switches

85 Cel

-40 Cel

20 dB

1 dB

1000 MHz

2500 MHz

TG2204F

Toshiba

SPDT

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

30 dBm

24 dBm

COMPONENT

3

TSSOP8,.16

50 ohm

RF/Microwave Switches

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

20 dB

1 dB

.01 us

e0

1895 MHz

1918 MHz

ABSORPTIVE

TG2205F

Toshiba

SPDT

SURFACE MOUNT

6

PLASTIC/EPOXY

GAAS

1

30 dBm

24 dBm

COMPONENT

3

TSOP6,.11,37

50 ohm

RF/Microwave Switches

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

20 dB

1 dB

.01 us

e0

3000 MHz

ABSORPTIVE

TG2214S

Toshiba

DIVERSITY SWITCH

SURFACE MOUNT

6

PLASTIC/EPOXY

GAAS

1

23.01 dBm

17 dBm

COMPONENT

2.7

FL6,.047,20

50 ohm

RF/Microwave Switches

85 Cel

-40 Cel

18 dB

.75 dB

1000 MHz

2500 MHz

TG2213S

Toshiba

DIVERSITY SWITCH

SURFACE MOUNT

6

PLASTIC/EPOXY

GAAS

1

23.01 dBm

17 dBm

COMPONENT

FL6,.047,20

50 ohm

RF/Microwave Switches

85 Cel

-40 Cel

18 dB

.75 dB

1000 MHz

2500 MHz

TG2210FT(TE85L)

Toshiba

TG2210FT

Toshiba

DIVERSITY SWITCH

SURFACE MOUNT

6

PLASTIC/EPOXY

GAAS

1

30 dBm

COMPONENT

2.5

TSSOP6,.08

50 ohm

RF/Microwave Switches

85 Cel

-40 Cel

27 dB

.7 dB

.2 us

1000 MHz

TG2205F(TE85L)

Toshiba

SPDT

SURFACE MOUNT

6

PLASTIC/EPOXY

GAAS

1

24 dBm

3

TSOP6,.11,37

RF/Microwave Switches

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

20 dB

1 dB

.01 us

e0

3000 MHz

ABSORPTIVE

RF/Microwave Switches

RF/microwave switches are electronic components used to selectively route high-frequency signals between input and output ports. These switches are essential building blocks in radio communication systems, test and measurement equipment, and radar systems. RF/microwave switches are designed to operate in a specific frequency range, and their performance is characterized by parameters such as insertion loss, isolation, and switching speed.

There are different types of RF/microwave switches, including electromechanical switches, PIN diode switches, and solid-state switches. Electromechanical switches use mechanical contacts to switch between input and output ports, while PIN diode switches and solid-state switches use electronic control signals to route signals between different ports. PIN diode switches are suitable for lower power applications, while solid-state switches are capable of handling higher power levels.

RF/microwave switches can be classified based on their configuration and functionality. Single-pole single-throw (SPST) switches have a single input and a single output and can switch between two states, while single-pole double-throw (SPDT) switches have a single input and two outputs and can switch between two output ports. Multi-throw switches have more than two output ports and can switch between multiple states. Switches can also be classified as absorptive or reflective, depending on their ability to absorb or reflect the input signal when it is not being routed to the output port.