RF/Microwave Switches

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Compression Point (1 dB)	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	Minimum Isolation	Maximum Insertion Loss	Additional Features	Nominal On Time	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency	Port Termination
TG2206F	Toshiba	DIVERSITY SWITCH						30 dBm				COMPONENT			50 ohm		85 Cel	-40 Cel			.7 dB					1000 MHz
TG2200AF	Toshiba	SPDT	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	30 dBm			24 dBm	COMPONENT	3	TSSOP8,.16	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel		20 dB	1 dB		.1 us		1895 MHz	1918 MHz	ABSORPTIVE
TG2211AFT	Toshiba	DIVERSITY SWITCH	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	25.05 dBm			22 dBm	COMPONENT	2.5	TSSOP6,.08	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel		14 dB	.85 dB				1000 MHz	2500 MHz
TG2203F	Toshiba	SPDT
TG2217CTB	Toshiba	DIVERSITY SWITCH	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	23.01 dBm			17 dBm	COMPONENT	2.6	SOLCC6,.04,14	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel		18 dB	.75 dB				1000 MHz	2500 MHz
TG2216TU	Toshiba	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	30 dBm			28 dBm	COMPONENT	2.7	FL6,.07,25	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel		20 dB	1 dB				1000 MHz	2500 MHz
TG2204F	Toshiba	SPDT	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	30 dBm			24 dBm	COMPONENT	3	TSSOP8,.16	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Tin/Lead (Sn/Pb)	20 dB	1 dB		.01 us	e0	1895 MHz	1918 MHz	ABSORPTIVE
TG2205F	Toshiba	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	30 dBm			24 dBm	COMPONENT	3	TSOP6,.11,37	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Tin/Lead (Sn/Pb)	20 dB	1 dB		.01 us	e0		3000 MHz	ABSORPTIVE
TG2214S	Toshiba	DIVERSITY SWITCH	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	23.01 dBm			17 dBm	COMPONENT	2.7	FL6,.047,20	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel		18 dB	.75 dB				1000 MHz	2500 MHz
TG2213S	Toshiba	DIVERSITY SWITCH	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	23.01 dBm			17 dBm	COMPONENT		FL6,.047,20	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel		18 dB	.75 dB				1000 MHz	2500 MHz
TG2210FT(TE85L)	Toshiba
TG2210FT	Toshiba	DIVERSITY SWITCH	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	30 dBm				COMPONENT	2.5	TSSOP6,.08	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel		27 dB	.7 dB		.2 us			1000 MHz
TG2205F(TE85L)	Toshiba	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1				24 dBm		3	TSOP6,.11,37		RF/Microwave Switches	85 Cel	-40 Cel	Tin/Lead (Sn/Pb)	20 dB	1 dB		.01 us	e0		3000 MHz	ABSORPTIVE
UPG132G-E1	Renesas Electronics	SPDT	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1				30 dBm		3/5	SSOP8,.2		RF/Microwave Switches			Tin/Lead (Sn/Pb)		1 dB		.03 us	e0		2500 MHz	REFLECTIVE
F2911NBGP8	Renesas Electronics	SPST	SURFACE MOUNT	8			1	21 dBm	1.05	.304 mA		COMPONENT	3.3	SOLCC8,.08,20	75 ohm		105 Cel	-40 Cel	Tin (Sn)	75 dB	.55 dB	HIGH RELIABILITY, HIGH ISOLATION AND I/P POWER-MAX(PEAK)=24 DBM	1 us	e3	1 MHz	3500 MHz	REFLECTIVE
F2912NCGI	Renesas Electronics	SPDT	SURFACE MOUNT	20	PLASTIC/EPOXY		1		1.09	.153 mA	30 dBm	COMPONENT	3.3	LCC20,.16SQ,20	50 ohm		125 Cel	-55 Cel	TIN	23 dB	1.4 dB		1.1 us	e3	.009 MHz	9000 MHz	ABSORPTIVE
CG2409M2-C4	Renesas Electronics	DIVERSITY SWITCH						38 dBm				COMPONENT			50 ohm		85 Cel	-45 Cel			.8 dB	HIGH ISOLATION			50 MHz	3800 MHz
UPG107B	Renesas Electronics	SPDT	SURFACE MOUNT	8	CERAMIC	GAAS	1						-5	FL8,.2		RF/Microwave Switches			Tin/Lead (Sn/Pb)					e0
F2976NEGK8	Renesas Electronics	SPDT	SURFACE MOUNT	12			3	30 dBm	1.08	.15 mA		COMPONENT	3.3	LCC12,.08SQ,20	50 ohm		105 Cel	-40 Cel	Tin (Sn)	29 dB	.56 dB	HIGH ISOLATION, I/P POWER-MAX(PEAK)=3.16W	1.5 us	e3	5 MHz	10000 MHz	REFLECTIVE
F2977NEGK	Renesas Electronics	SPDT	SURFACE MOUNT	12			1	33 dBm	1.08	.15 mA		COMPONENT	3.3	LCC12,.08SQ,20	50 ohm		105 Cel	-40 Cel	TIN	29 dB	.56 dB	HIGH ISOLATION, I/P POWER-MAX(PEAK)=6.3W	1.5 us	e3	30 MHz	6000 MHz	REFLECTIVE
UPG152TA-E3	Renesas Electronics	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1				27 dBm		3	TSOP6,.11,37		RF/Microwave Switches	80 Cel	-50 Cel	Tin/Lead (Sn/Pb)	20 dB	1 dB		.03 us	e0		2500 MHz	REFLECTIVE
QS4A210QG8	Renesas Electronics	SP4T																	Matte Tin (Sn)					e3
F2976NEGK	Renesas Electronics	SPDT	SURFACE MOUNT	12			3	30 dBm	1.08	.15 mA		COMPONENT	3.3	LCC12,.08SQ,20	50 ohm		105 Cel	-40 Cel	Tin (Sn)	29 dB	.56 dB	HIGH ISOLATION, I/P POWER-MAX(PEAK)=3.16W	1.5 us	e3	5 MHz	10000 MHz	REFLECTIVE
F2933NBGP8	Renesas Electronics	SPDT																	TIN					e3
F2970NCGK8	Renesas Electronics	SPDT																	Tin (Sn)					e3
F2932NBGP8	Renesas Electronics	SPDT	SURFACE MOUNT	16			1	30 dBm	1.12	.325 mA		COMPONENT	5	LCC16,.16SQ,25	50 ohm		105 Cel	-40 Cel	TIN	53 dB	1.1 dB	HIGH LINEARITY AND ISOLATION	.21 us	e3	50 MHz	8000 MHz	ABSORPTIVE
UPG139GV-E1	Renesas Electronics	DPDT	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1				27 dBm		3	SSOP8,.19		RF/Microwave Switches	80 Cel	-50 Cel	Tin/Lead (Sn/Pb)	10.5 dB	1.4 dB			e0		2000 MHz
UPG158TB-E3	Renesas Electronics	DIVERSITY SWITCH	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1				26.5 dBm		3	TSSOP6,.08		RF/Microwave Switches	85 Cel	-40 Cel	Tin/Lead (Sn/Pb)	22 dB	.65 dB		.05 us	e0		2500 MHz	REFLECTIVE
F2910NBGP8	Renesas Electronics	SPST	SURFACE MOUNT	8			1	23 dBm	3.3	.374 mA	34 dBm	COMPONENT	3.3	SOLCC8,.08,20	50 ohm		105 Cel	-55 Cel	TIN	30 dB	1 dB	HIGH LINEARITY AND ISOLATION, HIGH RELIABILITY	265 us	e3	30 MHz	8000 MHz	ABSORPTIVE
F2912NCGI8	Renesas Electronics	SPDT	SURFACE MOUNT	20	PLASTIC/EPOXY		1		1.09	.153 mA	30 dBm	COMPONENT	3.3	LCC20,.16SQ,20	50 ohm		125 Cel	-55 Cel	MATTE TIN	23 dB	1.4 dB		1.1 us	e3	.009 MHz	9000 MHz	ABSORPTIVE
F2913NLGK	Renesas Electronics	SPDT	SURFACE MOUNT	20			2	27 dBm	1.22	.17 mA		COMPONENT	3.3	LCC20,.16SQ,20	50 ohm		110 Cel	-40 Cel	TIN	46 dB	1.65 dB	HIGH LINEARITY AND ISOLATION, I/P POWER-MAX(PEAK)=1W	.155 us	e3	50 MHz	6000 MHz	ABSORPTIVE
F2955NBGK	Renesas Electronics	SP5T	SURFACE MOUNT	24			1	30 dBm	2	.36 mA	36.5 dBm	COMPONENT	3.3		50 ohm		105 Cel	-40 Cel	Tin (Sn)	41 dB	1.65 dB		.245 us	e3	50 MHz	8000 MHz	ABSORPTIVE
F2950NEGK	Renesas Electronics	SPDT						30 dBm				COMPONENT			50 ohm		105 Cel	-40 Cel	Tin (Sn)		.9 dB	HIGH ISOLATION, I/P POWER-MAX(PEAK)=5W		e3	100 MHz	8000 MHz
F2972NEGK	Renesas Electronics	SPDT																	Tin (Sn)					e3
UPG183GR	Renesas Electronics	SP4T						10 dBm				COMPONENT			50 ohm		85 Cel	-40 Cel	Tin/Lead (Sn/Pb)		10 dB	4 INPUT 2 OUTPUT SWITCH		e0	950 MHz	2150 MHz
UPG138GV	Renesas Electronics	SPDT	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1				34 dBm		-3	SSOP8,.2		RF/Microwave Switches	80 Cel	-50 Cel	Tin/Lead (Sn/Pb)	18 dB	.9 dB		.01 us	e0		2000 MHz	REFLECTIVE
UPD5715GR-A	Renesas Electronics
UPG139GV	Renesas Electronics	DPDT	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1				30 dBm		3/5	SSOP8,.19		RF/Microwave Switches	80 Cel	-50 Cel	Tin/Lead (Sn/Pb)	10.5 dB	1.4 dB		.06 us	e0			REFLECTIVE
F2915NBGK8	Renesas Electronics	SP5T																	MATTE TIN					e3
F2934NTGI8	Renesas Electronics	SPDT																	TIN					e3
UPD5710TK-E2-A	Renesas Electronics	SPDT						26.99 dBm				COMPONENT					85 Cel	-45 Cel	Tin/Bismuth (Sn/Bi)		1.2 dB			e6	0 MHz	2500 MHz
UPD5738T6N-E2-A	Renesas Electronics	DIVERSITY SWITCH	SURFACE MOUNT	6	PLASTIC/EPOXY	CMOS	1	23.01 dBm			20 dBm	COMPONENT	2.8	SOLCC6,.06,20	50 ohm	RF/Microwave Switches	85 Cel	-45 Cel	Tin/Bismuth (Sn/Bi)	12 dB	2 dB	CMOS COMPATIBLE		e6	10 MHz	2500 MHz
F2911NBGP	Renesas Electronics	SPST	SURFACE MOUNT	8			1	21 dBm	1.05	.304 mA		COMPONENT	3.3	SOLCC8,.08,20	75 ohm		105 Cel	-40 Cel	Tin (Sn)	75 dB	.55 dB	HIGH RELIABILITY, HIGH ISOLATION AND I/P POWER-MAX(PEAK)=24 DBM	1 us	e3	1 MHz	3500 MHz	REFLECTIVE
UPG154TB-E3	Renesas Electronics	SPDT	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1				30 dBm		3	TSSOP6,.08		RF/Microwave Switches	85 Cel	-45 Cel	Tin/Lead (Sn/Pb)	18 dB	.9 dB		.03 us	e0		2000 MHz	REFLECTIVE
F2970NCGK	Renesas Electronics	SPDT																	Tin (Sn)					e3
UPD5731T6M-E2-A	Renesas Electronics	DIVERSITY SWITCH	SURFACE MOUNT	12	PLASTIC/EPOXY	CMOS	1	23.01 dBm			20 dBm	COMPONENT	2.8	LCC12,.08SQ,20		RF/Microwave Switches	85 Cel	-45 Cel	Tin/Bismuth (Sn/Bi)	23 dB	1.9 dB	CMOS COMPATIBLE		e6	10 MHz	2500 MHz
UPG138GV-E1	Renesas Electronics	DIVERSITY SWITCH	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1				34 dBm		-3/-5	SSOP8,.19		RF/Microwave Switches	80 Cel	-50 Cel	Tin/Lead (Sn/Pb)	18 dB	.9 dB		.01 us	e0			REFLECTIVE
UPG130GR	Renesas Electronics	SPDT	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1				34 dBm		-5	SOP8,.25		RF/Microwave Switches	90 Cel	-65 Cel	Tin/Lead (Sn/Pb)	25 dB	.8 dB		.01 us	e0		2000 MHz	REFLECTIVE

RF/microwave switches are electronic components used to selectively route high-frequency signals between input and output ports. These switches are essential building blocks in radio communication systems, test and measurement equipment, and radar systems. RF/microwave switches are designed to operate in a specific frequency range, and their performance is characterized by parameters such as insertion loss, isolation, and switching speed.

There are different types of RF/microwave switches, including electromechanical switches, PIN diode switches, and solid-state switches. Electromechanical switches use mechanical contacts to switch between input and output ports, while PIN diode switches and solid-state switches use electronic control signals to route signals between different ports. PIN diode switches are suitable for lower power applications, while solid-state switches are capable of handling higher power levels.

RF/microwave switches can be classified based on their configuration and functionality. Single-pole single-throw (SPST) switches have a single input and a single output and can switch between two states, while single-pole double-throw (SPDT) switches have a single input and two outputs and can switch between two output ports. Multi-throw switches have more than two output ports and can switch between multiple states. Switches can also be classified as absorptive or reflective, depending on their ability to absorb or reflect the input signal when it is not being routed to the output port.