RF/Microwave Switches

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Compression Point (1 dB)	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	Minimum Isolation	Maximum Insertion Loss	Additional Features	Nominal On Time	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency	Port Termination
PE42520MLBA-Z	Psemi	SPDT	SURFACE MOUNT	16	PLASTIC/EPOXY	CMOS		1	36 dBm	1.15	.2 mA		COMPONENT	3.3/3.4	LCC16,.12SQ,20	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	NICKEL PALLADIUM GOLD	13 dB	2.7 dB	HIGH LINEARITY AND ISOLATION	5.5 us	e4	.009 MHz	13000 MHz	ABSORPTIVE
PE42582A-X	Psemi	SP8T							33.01 dBm				COMPONENT			50 ohm		105 Cel	-40 Cel	NICKEL PALLADIUM GOLD		2.8 dB	HIGH LINEARITY AND ISOLATION		e4	.009 MHz	8000 MHz
RFSW6024TR13	Qorvo	DIVERSITY SWITCH							36 dBm				COMPONENT			50 ohm		105 Cel	-40 Cel	NICKEL PALLADIUM GOLD		1 dB			e4	5 MHz	6000 MHz
ADG918BCPZ-500RL7	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	8	PLASTIC/EPOXY	CMOS		1	17.99 dBm			17 dBm	COMPONENT	1.65/2.75	SOLCC8,.1,20	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	MATTE TIN	36 dB	1.25 dB		.0066 us	e3	0 MHz	4000 MHz	ABSORP/REFLECTIVE
ADRF5021BCCZN	Analog Devices	SPDT	SURFACE MOUNT	20				1	21 dBm	1.15	.6 mA	28 dBm	COMPONENT	-2.5,3.3/5	LGA20,7X7,16	50 ohm		85 Cel	-40 Cel					1.1 us		.009 MHz	30000 MHz	ABSORPTIVE
JSW2-63VHDRP+	Mini-circuits	DIVERSITY SWITCH
PE42540G-Z	Psemi	SP4T
PE42540LGBC-Z	Psemi	SP4T							30 dBm	1.1			COMPONENT			50 ohm		85 Cel	-40 Cel			1.6 dB	HIGH LINEARITY AND ISOLATION			.00001 MHz	8000 MHz
QPC8019QTR13	Qorvo	SPDT	SURFACE MOUNT	6			AEC-Q100	2		1.75	.06 mA		COMPONENT	1.8		50 ohm		105 Cel	-40 Cel		14.5 dB	1.1 dB	HIGH ISOLATION, I/P POWER-MAX(PEAK)=2W			617 MHz	8000 MHz	REFLECTIVE
AS204-80LF	Skyworks Solutions	SP4T	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1	29.03 dBm	1.5		26 dBm	COMPONENT	5	SSOP16,.25	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Matte Tin (Sn)	22 dB	1.2 dB	HIGH ISOLATION	.125 us	e3	300 MHz	3500 MHz	ABSORPTIVE
HMC253AQS24E	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS		1	20 dBm		7.5 mA	23 dBm	COMPONENT	5	SSOP24,.24	50 ohm		85 Cel	-40 Cel	MATTE TIN	28 dB	2.1 dB		.09 us	e3	0 MHz	2500 MHz
MASW-002100-11910G	M/a-com Technology Solutions	SPDT						1	32.79 dBm				COMPONENT		DIE OR CHIP		RF/Microwave Switches	125 Cel	-65 Cel		20 dB	1.2 dB	HIGH ISOLATION			50 MHz	20000 MHz
MASW-002100-11910W	TE Connectivity	SPDT						1							DIE OR CHIP		RF/Microwave Switches	125 Cel	-65 Cel		34 dB	1.2 dB					20000 MHz
MASW-007072-000100	M/a-com Technology Solutions	SPDT							33.98 dBm	1.9			COMPONENT			50 ohm		85 Cel	-40 Cel	Matte Tin (Sn)		1.45 dB			e3	0 MHz	3000 MHz
PE42462A-X	Psemi	DIVERSITY SWITCH							33.01 dBm				COMPONENT			50 ohm		105 Cel	-40 Cel	NICKEL PALLADIUM GOLD		2.8 dB	HIGH ISOLATION		e4	10 MHz	8000 MHz
SW-254	M/a-com Technology Solutions	SP4T								2.3			COMPONENT			50 ohm		85 Cel	-55 Cel			1.9 dB				5 MHz	2000 MHz
ADRF5042BCCZN	Analog Devices	SP4T	SURFACE MOUNT	24	PLASTIC/EPOXY			1	25 dBm	1.13		27 dBm	COMPONENT	+-3.3	LCC24,.12SQ,16	50 ohm		105 Cel	-40 Cel					.014 us		100 MHz	44000 MHz	ABSORPTIVE
NJG1681MD7	New Japan Radio	SPDT							37 dBm	1.4			COMPONENT			50 ohm		85 Cel	-40 Cel	TIN BISMUTH		.65 dB	HIGH ISOLATION		e6	0 MHz	6000 MHz
MASWSS0129TR-3000	TE Connectivity	DPDT	SURFACE MOUNT	12	PLASTIC/EPOXY	GAAS		1				31 dBm		3	LCC12,.12SQ,20		RF/Microwave Switches	85 Cel	-40 Cel		25 dB	1.55 dB		.09 us			6000 MHz
HMC349LP4CE	Hittite Microwave	SPDT	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1	30 dBm			31 dBm	COMPONENT	5	LCC16,.16SQ,25	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Matte Tin (Sn)	55 dB	1.7 dB	HIGH ISOLATION	.12 us	e3	0 MHz	4000 MHz	ABSORPTIVE
HMC550AE	Analog Devices	DIVERSITY SWITCH							33.98 dBm				COMPONENT			50 ohm		85 Cel	-40 Cel			.9 dB	CMOS COMPATIBLE			0 MHz	6000 MHz
SW-210	M/a-com Technology Solutions	SPST							33.98 dBm	2.5			COMPONENT			50 ohm		85 Cel	-55 Cel			1.8 dB				0 MHz	6000 MHz
ADRF5046BCCZN	Analog Devices	DIVERSITY SWITCH							27.48 dBm				COMPONENT			50 ohm		105 Cel	-40 Cel	NICKEL PALLADIUM GOLD			CMOS COMPATIBLE, HIGH ISOLATION		e4	100 MHz	44000 MHz
ADRF5250BCPZ	Analog Devices	DIVERSITY SWITCH							35 dBm				COMPONENT			50 ohm		105 Cel	-40 Cel	MATTE TIN			HIGH ISOLATION		e3	100 MHz	6000 MHz
ADRF5250BCPZRL	Analog Devices	DIVERSITY SWITCH							35 dBm				COMPONENT			50 ohm		105 Cel	-40 Cel	MATTE TIN			HIGH ISOLATION		e3	100 MHz	6000 MHz
HMC253ALC4	Analog Devices	DIVERSITY SWITCH							25.05 dBm				COMPONENT			50 ohm		85 Cel	-40 Cel			2.4 dB	CMOS COMPATIBLE			0 MHz	3500 MHz
XMSSJR6G0BA-093	Murata Manufacturing	SPDT
ADRF5025BCCZN	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	12	PLASTIC/EPOXY	CMOS		1	27.5 dBm			27.5 dBm	COMPONENT	+-3.3	LCC12,.1SQ,16	50 ohm		105 Cel	-40 Cel	NICKEL PALLADIUM GOLD				1.7 us	e4	.009 MHz	44000 MHz	REFLECTIVE
ADRF5160BCPZ-R7	Analog Devices	DIVERSITY SWITCH							49.7 dBm				COMPONENT			50 ohm		105 Cel	-40 Cel			1 dB	CMOS COMPATIBLE			700 MHz	4000 MHz
CG2214M6-C2	California Eastern Laboratories	DIVERSITY SWITCH							33.01 dBm				COMPONENT			50 ohm		85 Cel	-45 Cel			.55 dB	HIGH ISOLATION			50 MHz	3000 MHz
F2913NLGK8	Renesas Electronics	SPDT	SURFACE MOUNT	20				2	27 dBm	1.22	.17 mA		COMPONENT	3.3	LCC20,.16SQ,20	50 ohm		110 Cel	-40 Cel	TIN	46 dB	1.65 dB	HIGH LINEARITY AND ISOLATION, I/P POWER-MAX(PEAK)=1W	.155 us	e3	50 MHz	6000 MHz	ABSORPTIVE
HMC435AMS8GE	Analog Devices	DIVERSITY SWITCH							30.97 dBm				COMPONENT			50 ohm		85 Cel	-40 Cel	MATTE TIN		1.8 dB	HIGH ISOLATION		e3	0 MHz	4000 MHz
HMC641ATCPZ-EP-PT	Analog Devices	SP4T	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS		1	17 dBm		5 mA	22 dBm	COMPONENT	-3/-5	LCC24,.16SQ,20	50 ohm		125 Cel	-55 Cel		30 dB			.1 us		100 MHz	20000 MHz	ABSORPTIVE
HMC641ATCPZ-EP-RL7	Analog Devices	SP4T	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS		1	17 dBm		5 mA	22 dBm	COMPONENT	-3/-5	LCC24,.16SQ,20	50 ohm		125 Cel	-55 Cel		30 dB			.1 us		100 MHz	20000 MHz	ABSORPTIVE
PE4239A-Z	Psemi	SPDT
TGS2355-SM	Qorvo	SPDT	SURFACE MOUNT	32				1	47 dBm				COMPONENT		LCC32,.2SQ,20	50 ohm		85 Cel	-40 Cel					.05 us		500 MHz	6000 MHz	REFLECTIVE
ADRF5021BCCZN-R7	Analog Devices	SPDT	SURFACE MOUNT	20				1	21 dBm	1.15	.6 mA	28 dBm	COMPONENT	-2.5,3.3/5	LGA20,7X7,16	50 ohm		85 Cel	-40 Cel					1.1 us		.009 MHz	30000 MHz	ABSORPTIVE
ADRF5130BCPZ	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	24				1	46.5 dBm				COMPONENT	5	LCC24,.16SQ,20	50 ohm		105 Cel	-40 Cel	MATTE TIN			TTL COMPATIBLE, HIGH ISOLATION	.75 us	e3	700 MHz	3500 MHz	REFLECTIVE
HMC595AE	Analog Devices	DIVERSITY SWITCH							39 dBm				COMPONENT			50 ohm		85 Cel	-40 Cel	Matte Tin (Sn) - annealed		.8 dB	CMOS COMPATIBLE		e3	0 MHz	3000 MHz
S126	L-3 Narda-miteq	SPDT
SKY13355-374LF	Skyworks Solutions	DIVERSITY SWITCH											COMPONENT			50 ohm		85 Cel	-40 Cel			.95 dB	HIGH ISOLATION			100 MHz	6000 MHz
4246-01	Psemi
6502	New England Microwave	SPST		7	PLASTIC/EPOXY	ECL	MIL-STD-883 Class B (Modified)	1		1.2				5,-5.2	MODULE,7LEAD(UNSPEC)		RF/Microwave Switches	125 Cel	-55 Cel		60 dB	1.5 dB		.007 us			2000 MHz
HMC245QS16E	Analog Devices	SP3T	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1	26.99 dBm			26 dBm	COMPONENT	5	SSOP16,.25	50 ohm	RF/Microwave Switches	85 Cel	-40 Cel	Matte Tin (Sn)	26 dB	1 dB	CMOS/TTL COMPATIBLE	.15 us	e3	0 MHz	3500 MHz	ABSORPTIVE
HMC253LC4TR	Analog Devices	SP8T	SURFACE MOUNT	24	CERAMIC	GAAS		1				24 dBm		5	LCC24,.16SQ,20		RF/Microwave Switches	85 Cel	-40 Cel	Gold (Au) - with Nickel (Ni) barrier	30 dB	1.7 dB		.1 us	e4		3500 MHz	ABSORPTIVE
HMC321ALP4E	Analog Devices	SP8T							26.02 dBm				COMPONENT			50 ohm		85 Cel	-40 Cel	MATTE TIN		3.1 dB	HIGH ISOLATION		e3	0 MHz	8000 MHz
HMC349AMS8G	Analog Devices	DIVERSITY SWITCH							33.5 dBm				COMPONENT			50 ohm		125 Cel	-40 Cel	TIN LEAD		2.1 dB	CMOS COMPATIBLE		e0	100 MHz	4000 MHz
HMC349AMS8GE	Analog Devices	DIVERSITY SWITCH							33.5 dBm				COMPONENT			50 ohm		125 Cel	-40 Cel	MATTE TIN		2.1 dB	CMOS COMPATIBLE		e3	100 MHz	4000 MHz

RF/microwave switches are electronic components used to selectively route high-frequency signals between input and output ports. These switches are essential building blocks in radio communication systems, test and measurement equipment, and radar systems. RF/microwave switches are designed to operate in a specific frequency range, and their performance is characterized by parameters such as insertion loss, isolation, and switching speed.

There are different types of RF/microwave switches, including electromechanical switches, PIN diode switches, and solid-state switches. Electromechanical switches use mechanical contacts to switch between input and output ports, while PIN diode switches and solid-state switches use electronic control signals to route signals between different ports. PIN diode switches are suitable for lower power applications, while solid-state switches are capable of handling higher power levels.

RF/microwave switches can be classified based on their configuration and functionality. Single-pole single-throw (SPST) switches have a single input and a single output and can switch between two states, while single-pole double-throw (SPDT) switches have a single input and two outputs and can switch between two output ports. Multi-throw switches have more than two output ports and can switch between multiple states. Switches can also be classified as absorptive or reflective, depending on their ability to absorb or reflect the input signal when it is not being routed to the output port.