PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE Insulated Gate Bipolar Transistors (IGBT) 25

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

FZ1000R33HE3BPSA1

Infineon Technologies

N-CHANNEL

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1000 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

3550 ns

7

FLANGE MOUNT

SILICON

3300 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

1150 ns

FZ800R12KL4C

Infineon Technologies

N-CHANNEL

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

NO

5600 W

1300 A

UNSPECIFIED

POWER CONTROL

2.6 V

UNSPECIFIED

RECTANGULAR

2

1100 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

450 ns

FZ800R12KL4CNOSA1

Infineon Technologies

N-CHANNEL

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1300 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1100 ns

7

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

450 ns

FZ800R33KF2CNOSA1

Infineon Technologies

N-CHANNEL

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

NO

9600 W

1300 A

UNSPECIFIED

4.25 V

UNSPECIFIED

RECTANGULAR

2

1900 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

3300 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

480 ns

FZ800R33KL2C_B5

Infineon Technologies

N-CHANNEL

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

NO

9800 W

1500 A

UNSPECIFIED

3.65 V

UNSPECIFIED

RECTANGULAR

2

4250 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

3300 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1400 ns

FZ1600R12HP4

Infineon Technologies

N-CHANNEL

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

NO

9400 W

2400 A

UNSPECIFIED

POWER CONTROL

2.05 V

UNSPECIFIED

RECTANGULAR

2

1330 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

1

ISOLATED

Not Qualified

820 ns

FZ1600R17KE3NOSA1

Infineon Technologies

N-CHANNEL

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

NO

2300 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

1770 ns

7

FLANGE MOUNT

150 Cel

SILICON

1700 V

UPPER

R-XUFM-X7

1

ISOLATED

Not Qualified

750 ns

FZ400R65KF1

Infineon Technologies

N-CHANNEL

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

NO

7400 W

800 A

UNSPECIFIED

4.9 V

UNSPECIFIED

RECTANGULAR

2

6500 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

6300 V

20 V

TIN LEAD

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

e0

1120 ns

FZ2400R17KE3

Infineon Technologies

N-CHANNEL

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

NO

12500 W

3200 A

UNSPECIFIED

2.45 V

UNSPECIFIED

RECTANGULAR

2

1890 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

850 ns

FZ400R65KF1NOSA1

Infineon Technologies

N-CHANNEL

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

NO

800 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

6500 ns

7

FLANGE MOUNT

SILICON

6300 V

UPPER

R-XUFM-X7

ISOLATED

1120 ns

FZ400R65KF2

Infineon Technologies

N-CHANNEL

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

NO

7350 W

400 A

UNSPECIFIED

4.9 V

UNSPECIFIED

RECTANGULAR

2

5900 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

6300 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1120 ns

FZ400R65KF2NOSA1

Infineon Technologies

N-CHANNEL

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

NO

400 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

5900 ns

7

FLANGE MOUNT

150 Cel

SILICON

6300 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1120 ns

FD1600/1200R17KF6C_B2

Infineon Technologies

N-CHANNEL

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

NO

2600 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

360 ns

9

FLANGE MOUNT

175 Cel

SILICON

1700 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

490 ns

FD800R33KL2C-K_B5

Infineon Technologies

N-CHANNEL

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

NO

9800 W

1500 A

UNSPECIFIED

POWER CONTROL

3.65 V

UNSPECIFIED

RECTANGULAR

2

4250 ns

9

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

3300 V

20 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1400 ns

FZ800R33KF2C

Infineon Technologies

N-CHANNEL

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

NO

9600 W

1300 A

UNSPECIFIED

4.25 V

UNSPECIFIED

RECTANGULAR

2

1900 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

3300 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

480 ns

FZ2400R17KE3NOSA1

Infineon Technologies

N-CHANNEL

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

NO

3200 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

1890 ns

7

FLANGE MOUNT

150 Cel

SILICON

1700 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

850 ns

FZ1600R17KE3

Infineon Technologies

N-CHANNEL

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

NO

8950 W

2300 A

UNSPECIFIED

2.45 V

UNSPECIFIED

RECTANGULAR

2

1770 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X7

1

ISOLATED

Not Qualified

750 ns

FZ1600R12HP4NPSA1

Infineon Technologies

N-CHANNEL

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

NO

9400 W

2400 A

UNSPECIFIED

POWER CONTROL

2.05 V

UNSPECIFIED

RECTANGULAR

2

1330 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

820 ns

FZ1000R33HE3BOSA1

Infineon Technologies

N-CHANNEL

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

NO

9600 W

1000 A

UNSPECIFIED

POWER CONTROL

3.1 V

UNSPECIFIED

RECTANGULAR

2

3550 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

3300 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1150 ns

FZ1200R12HP4

Infineon Technologies

N-CHANNEL

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

NO

7150 W

1790 A

UNSPECIFIED

POWER CONTROL

2.05 V

UNSPECIFIED

RECTANGULAR

2

1260 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

1

ISOLATED

Not Qualified

660 ns

FZ1200R12HP4NPSA1

Infineon Technologies

N-CHANNEL

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1790 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1260 ns

7

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

660 ns

FZ1200R17KE3_B2

Infineon Technologies

N-CHANNEL

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

NO

8950 W

1900 A

UNSPECIFIED

2.45 V

UNSPECIFIED

RECTANGULAR

2

1900 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

900 ns

FZ1200R17KE3

Infineon Technologies

N-CHANNEL

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

NO

7350 W

1800 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

2

1660 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

700 ns

FZ1200R17KE3NOSA1

Infineon Technologies

N-CHANNEL

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1800 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1660 ns

7

FLANGE MOUNT

150 Cel

SILICON

1700 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

700 ns

FZ1000R33HE3

Infineon Technologies

N-CHANNEL

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

NO

9600 W

1000 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

3550 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

3300 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1150 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.