170 A Insulated Gate Bipolar Transistors (IGBT) 13

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IXXX100N60C3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	695 W	170 A	PLASTIC/EPOXY	POWER CONTROL	2.2 V	THROUGH-HOLE	RECTANGULAR	1	220 ns	3	IN-LINE		150 Cel	SILICON	600 V	-55 Cel	20 V	5.5 V	Matte Tin (Sn)	SINGLE	R-PSIP-T3	COLLECTOR				e3			95 ns
APTGLQ100DA120T1G	Microchip Technology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND THERMISTOR	NO	520 W	170 A	UNSPECIFIED	MOTOR CONTROL	2.42 V	UNSPECIFIED	RECTANGULAR	1	414 ns	12	FLANGE MOUNT		175 Cel	SILICON	1200 V	-40 Cel	20 V	6.4 V		UPPER	R-XUFM-X12	ISOLATED							79 ns
APT85GR120B2	Microchip Technology	N-CHANNEL	SINGLE	NO	962 W	170 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1	445 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	-55 Cel	30 V	6.5 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-247				113 ns
IXXK100N60C3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	695 W	170 A	PLASTIC/EPOXY	POWER CONTROL	2.2 V	THROUGH-HOLE	RECTANGULAR	1	220 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	5.5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3	COLLECTOR			TO-264AA	e1	10	260	95 ns
IXGX100N170	Littelfuse	N-CHANNEL	SINGLE	NO	830 W	170 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	720 ns	3	IN-LINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1700 V		20 V	5 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS		e1			285 ns
IXYH75N65C3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	750 W	170 A	PLASTIC/EPOXY	POWER CONTROL	2.3 V	THROUGH-HOLE	RECTANGULAR	1	166 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V	6 V	MATTE TIN	SINGLE	R-PSFM-T3	COLLECTOR			TO-247AD	e3	10	260	83 ns
IXYN100N65A3	Littelfuse	N-CHANNEL	SINGLE	NO	600 W	170 A	PLASTIC/EPOXY	POWER CONTROL	1.8 V	UNSPECIFIED	RECTANGULAR	1	360 ns	4	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V	6 V		UPPER	R-PUFM-X4	ISOLATED		LOW CONDUCTION LOSS					68 ns	UL RECOGNIZED
BSM75GB120DLCHOSA1	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		170 A	UNSPECIFIED			UNSPECIFIED	RECTANGULAR	2	420 ns	7	FLANGE MOUNT		150 Cel	SILICON	1200 V					UPPER	R-XUFM-X7	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	110 ns
BSM75GB120DLC	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	690 W	170 A	UNSPECIFIED		2.6 V	UNSPECIFIED	RECTANGULAR	2	420 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X7	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	110 ns
IXGQ170N30PB	Littelfuse	N-CHANNEL	SINGLE	NO		170 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	259 ns	3	FLANGE MOUNT		150 Cel	SILICON	300 V				MATTE TIN	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified			e3			103 ns
MWI150-06A8	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	515 W	170 A	UNSPECIFIED	POWER CONTROL	2.5 V	UNSPECIFIED	RECTANGULAR	6	260 ns	33	FLANGE MOUNT	Insulated Gate BIP Transistors	125 Cel	SILICON	600 V		20 V		MATTE TIN OVER NICKEL	UPPER	R-XUFM-X33	ISOLATED	Not Qualified	ULTRA FAST, LOW SWITCHING LOSS, LOW SATURATION VOLTAGE		e3			155 ns
IXGK100N170	Littelfuse	N-CHANNEL	SINGLE	NO	830 W	170 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	720 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1700 V		20 V	5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-264AA	e1	10	260	285 ns
IXXN100N60B3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	170 A	PLASTIC/EPOXY	POWER CONTROL	1.8 V	UNSPECIFIED	RECTANGULAR	1	350 ns	4	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	5.5 V		UPPER	R-PUFM-X4	ISOLATED							92 ns	UL RECOGNIZED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.