220 A Insulated Gate Bipolar Transistors (IGBT) 19

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

SKM150GB12T4G

Semikron International

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

220 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

2

7

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UL RECOGNIZED

IXXH100N60B3

Littelfuse

N-CHANNEL

SINGLE

NO

830 W

220 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

350 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

92 ns

APT150GN60JDQ4

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

536 W

220 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

575 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

30 V

6.5 V

TIN SILVER COPPER

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

HIGH RELIABILITY

e1

154 ns

UL RECOGNIZED

FGA70N33BTDTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

149 W

220 A

UNSPECIFIED

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

244 ns

3

FLANGE MOUNT

150 Cel

SILICON

330 V

-55 Cel

30 V

4.3 V

SINGLE

R-XSFM-T3

NOT SPECIFIED

NOT SPECIFIED

39 ns

GA100TS60SQ

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

220 A

UNSPECIFIED

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

2

11

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

40

260

UL APPROVED

F3L400R10W3S7F_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

220 A

UNSPECIFIED

1.6 V

UNSPECIFIED

RECTANGULAR

6

773 ns

20

FLANGE MOUNT

150 Cel

SILICON

950 V

-40 Cel

20 V

5.85 V

UPPER

R-XUFM-X20

ISOLATED

127 ns

IEC-61140

IFS150B12N3E4P_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

750 W

220 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

640 ns

41

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.35 V

UPPER

R-XUFM-X41

ISOLATED

240 ns

UL RECOGNIZED

GA100TS60SQPBF

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

220 A

UNSPECIFIED

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

2

11

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X11

ISOLATED

LOW CONDUCTION LOSS

NOT SPECIFIED

NOT SPECIFIED

UL APPROVED

IFS150B12N3E4PB11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

750 W

220 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

640 ns

41

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.35 V

UPPER

R-XUFM-X41

ISOLATED

240 ns

UL RECOGNIZED

BSM150GB170DN2

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1250 W

220 A

UNSPECIFIED

POWER CONTROL

3.9 V

UNSPECIFIED

RECTANGULAR

2

1310 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

720 ns

BSM150GB170DN2E3166

Infineon Technologies

1250 W

220 A

3.9 V

1

Insulated Gate BIP Transistors

150 Cel

1700 V

20 V

FF200R06YE3

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

515 W

220 A

UNSPECIFIED

POWER CONTROL

1.9 V

UNSPECIFIED

RECTANGULAR

2

470 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X7

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

130 ns

BSM150GB170DN2HOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

220 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1310 ns

7

FLANGE MOUNT

150 Cel

SILICON

1700 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

720 ns

FF200R06YE3BOMA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

220 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

470 ns

7

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X7

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

130 ns

IXGP10N80A

Littelfuse

N-CHANNEL

NO

100 W

220 A

200 ns

1000 ns

Insulated Gate BIP Transistors

150 Cel

800 V

30 V

5 V

Tin/Lead (Sn/Pb)

e0

IXYN110N120C4

Littelfuse

N-CHANNEL

SINGLE

NO

830 W

220 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

UNSPECIFIED

RECTANGULAR

1

357 ns

4

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

UPPER

R-PUFM-X4

ISOLATED

88 ns

UL RECOGNIZED

MMIX1G120N120A3V1

Littelfuse

N-CHANNEL

YES

400 W

220 A

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

5 V

MIXA151W1200EH

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

695 W

220 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

350 ns

19

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X19

ISOLATED

110 ns

UL RECOGNIZED

MIXA150W1200TEH

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

695 W

220 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

350 ns

13

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X13

ISOLATED

Not Qualified

110 ns

UL RECOGNIZED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.