28 A Insulated Gate Bipolar Transistors (IGBT) 54

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IXBF40N140	Littelfuse	N-CHANNEL	SINGLE	NO	250 W	28 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	340 ns	3	IN-LINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1400 V		20 V	8 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3	ISOLATED	Not Qualified	HIGH RELIABILITY, FAST SWITCHING		e1			260 ns
IXYH12N250C	Littelfuse	N-CHANNEL	SINGLE	NO	310 W	28 A	PLASTIC/EPOXY	POWER CONTROL	4.5 V	THROUGH-HOLE	RECTANGULAR	1	303 ns	3	FLANGE MOUNT		175 Cel	SILICON	2500 V	-55 Cel	20 V	5 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-247AD				28 ns
MIXA20W1200TML	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	100 W	28 A	UNSPECIFIED	POWER CONTROL	2.1 V	UNSPECIFIED	RECTANGULAR	6	350 ns	24	FLANGE MOUNT	Insulated Gate BIP Transistors	125 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X24	ISOLATED							110 ns	UL RECOGNIZED
MIXA20W1200MC	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	100 W	28 A	UNSPECIFIED	POWER CONTROL	2.1 V	UNSPECIFIED	RECTANGULAR	6	350 ns	17	FLANGE MOUNT	Insulated Gate BIP Transistors	125 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X17	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	110 ns
IXYH12N250CHV	Littelfuse	N-CHANNEL	SINGLE	NO	310 W	28 A	PLASTIC/EPOXY	POWER CONTROL	4.5 V	THROUGH-HOLE	RECTANGULAR	1	333 ns	3	FLANGE MOUNT		175 Cel	SILICON	2500 V	-55 Cel	20 V	5 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-247				32 ns
IXYH12N250CV1HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	310 W	28 A	PLASTIC/EPOXY	POWER CONTROL	4.5 V	THROUGH-HOLE	RECTANGULAR	1	333 ns	3	FLANGE MOUNT		175 Cel	SILICON	2500 V	-55 Cel	20 V	5 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-247				32 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.